Srivatsan Venkatesan of Intel Micron Flash Technologies will be presenting during graduate seminar Monday, Sept. 24 at 3:05 p.m. in WEB 1250. The title of the presentation is “Flash Memory Technology”
Monday, September 24
3:05 p.m.
WEB 1250
Srivatsan Venkatesan of Intel Micron Flash Technologies will be presenting during graduate seminar Monday, Sept. 24 at 3:05 p.m. in WEB 1250. The title of the presentation is “Flash Memory Technology”
Monday, September 24
3:05 p.m.
WEB 1250
Srivatsan Venkatesan of Intel Micron Flash Technologies will be presenting during graduate seminar Monday, Sept. 24 at 3:05 p.m. in WEB 1250. The title of the presentation is “Flash Memory Technology”
Monday, September 24
3:05 p.m.
WEB 1250
Intel Micron Flash Technologies Lehi, Utah September 24 WEB 1250 3:05 p.m.
Flash Memory Technology
ABSTRACT: This seminar is an overview of Flash memory technology. Flash memories are a class of solid state non-volatile memory that uses floating gate MOSFETS as a memory element to store charge. Flash memories are widely used in mobile and computing devices and are expected to increase in popularity in the coming years. In this talk we introduce concept and operation of a single flash cell and how they are integrated into a memory array. NAND flash memory brings in unique challenges with design, fabrication, and reliability. Here we discuss key performance indicators and how they impact the functioning and reliability of the memory. Industry has been aggressive scaling flash to keep the cost lower, which in turn introduces new challenges in meeting performance requirements. This trend has driven many innovations in process and architecture. I will discuss a few industry examples of these challenges and highlight process interactions to these performance indicators. _______________________ Biography of Srivatsan Venkatesan Srivatsan Venkatesan received his Bachelors degree in Electrical Engineering from University of Madras, India in 2002 and Masters degree in Electrical Engineering from the University of Utah in 2004. Presently he works for Intel Micron Flash Technologies, Lehi as a Device Engineer for Advanced Technology Integration group. He has been involved in technology transfers for 34nm, 25nm and 20nm flash memory from research and development to manufacturing. Professional interests include semiconductor device physics, process-device-circuit interaction and NAND flash reliability. He has been instrumental in optimization of CMOS performance and memory storage. He has also worked as parametric engineer, where he was responsible for setup of parametric testing operation for the new fab in Lehi. Prior to working at IM Flash he worked as a test engineer for DRAM memories at Micron Technology. His other interests include Linux and scripting in Perl.
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