152 views

Uploaded by IDES

The Balanced Differential Amplifiers play a most
important role as basic building block in instrumentation
amplifier circuit. One of the characteristic of a differential
amplifier, the common mode rejection ratio (CMRR) is most
important. The active load used for balanced differential
amplifier is going to affect differential gain, thus CMRR of
the circuit. The active load used can be a diode connected load
or current source load. Though the differential gain is limited
by nonlinearity of MOSFET, optimum differential gain can
be obtained by combination of both active loads.

- A Op 610
- COMMAND-converted.docx
- 65n06
- viper20sp
- Power Consumption of a MOSFET
- gpt13n50_gpt13n50d
- TSPICE Tutorial
- BLF278 wideband rf power mosfet
- viper50a[1]
- BSH105
- EE_255_EXP_7
- Po3.pdf
- amplifier
- analog electronic circuits
- elektronika_datasheet
- 160
- nitronex_an9
- 2SK3918
- F datasheet
- irs2001mpbf - IRS2001MPBF HIGH AND LOW SIDE DRIVER

You are on page 1of 3

2, July 2012

Mr. D. K. Shedge, Dr. P. W. Wani, and Dr. M. S. Sutaone

Government College of Engineering, Pune, India Email: dshedge@yahoo.com Email: pwwani@gmail.com, hod.extc@coep.ac.in

Abstract The Balanced Differential Amplifiers play a most important role as basic building block in instrumentation amplifier circuit. One of the characteristic of a differential amplifier, the common mode rejection ratio (CMRR) is most important. The active load used for balanced differential amplifier is going to affect differential gain, thus CMRR of the circuit. The active load used can be a diode connected load or current source load. Though the differential gain is limited by nonlinearity of MOSFET, optimum differential gain can be obtained by combination of both active loads. Index Terms Balanced differential amplifier (BDA), Common mode rejection ratio (CMRR), diode-connected load, currentsource load.

gm = Where Cox is gate oxide capacitance per unit area, ID is drain current and W/L is aspect ratio. The transconductance g m is directly proportional to aspect ratio of MOSFET (W/L). As aspect ratio is reduced, gm gets reduced with increase in gain of MOSFET amplifier at the cost of reduced drain current and output swing. The small signal differential gain of BDA as shown in Fig. 1 has been derived using the half circuit concept. Here in differential mode it was assumed that sources of M1 and M2 were at virtual ground (AC ground). The diffrential gain comes out to be [6] (1) (3) Where and are mobility of charge carriers and (W/L) aspect ratios of NMOS (M1 and M2) and PMOS (M3 and M4) devices respectively. In the circuit of Fig. 1, the diode connected loads consume the biasing votage which creates trade off between gain, output voltage swing and input common mode voltage range. (2)

I. INTRODUCTION The Balanced Differential Amplifier has been a versatile building block in analog circuits like instrumentation amplifier [5]. The instrumentation amplifier has been used in several applications as a signal conditioning circuit. However in order to use it in biomedical applications, it is required to amplify small high frequency differential signal in presence of strong common mode noise. It is needed to built instrumentation amplifier with improved CMRR and bandwidth together [2]. This paper presented the design and implementation of balanced differential amplifier with active loads: diodeconnected, current-source and combination of both. It implied that with combination of both loads optimum differential gain can be obtained. The current in source circuitry is taken to be current mirror source to provide biasing current 60A [1]. A. Balanced differential amplifier with diode-connected load. In BDA the differential gain depends directly on load resistance connected. To achieve higher differential gain load resistance needed to be increase. In CMOS technologies, it is difficult to fabricate resistors with reasonable physical size. It is desirable to replace load with a MOSFET. A MOSFET with gate and drain shorted becomes a diode and offers a small signal resistance. This configuration behaves like a two terminal resistor. As gate and drain is shorted the transistor is always in saturation. The impedance offered by diode can be obtained by replacing MOSFET by its small signal equivalent circuit. The impedance of diode becomes (1/gm) 1/gm. Where gm is a transconductance and r d is output resistance of MOSFET. If body effect is considered additional transconductance, gmb gets added to gm. 2012 ACEEE DOI: 01.IJRTET.7.2.551 92

Full Paper Int. J. on Recent Trends in Engineering and Technology, Vol. 7, No. 2, July 2012 B. Balanced differential amplifier with current-source load. Thus selection of L will be tradeoff between bandwidth and current handling capability that is output power.

The drawbacks of diode connected load can be minimized by replacing it with current source load [3], [4]. Here PMOS devices M3 and M4 operate in saturation and provide constant current to M1 and M2. The saturation of M3 and M4 is assured by resistors R2 and R3. Now the total impedance seen at output node is , and using half circuit concept the differential voltage gain becomes (4) The advantage here is that the output impedance and biasing voltage of M3 are less strongly coupled ascompared to resistive load. The biasing voltage of M3 can be reduced by increasing width (W). The r d3 can be increase by increasing W and L of M3 but at the cost of large capacitance introduced, thus reducing bandwidth. C. Balanced differential amplifier with combination of diode-connected and current source load. The difficulties with the above circuits can alleviated by supplying considerable part (80%) of bias current of M1 and M2 by current sources and remaining (20%) by diode connected load. The idea here is to lower the gm of diode connected load devices by reducing their current instead of their aspect ratio. If M7 and M8 carry 80% of drain current of M1 and M2 the current through M3 and M4 is reduced by 5 times. For given biasing conditions, this reduces transconductance of M3 and M4 by 5 times. The differential gain now becomes approximately 5 times greater than with only diode connected load. The resistors R2 and R3 would be replaced by MOSFETs or in some of the circuits the current handled by current sources is dependent on bias voltage [7][8]. The frequency response of differential amplifier will depend on length of channel (L) selected. If lower L is selected MOS capacitances will have lower value thus increasing the bandwidth. The reduction in L is also going to limit current handling capability of MOSFETs. 2012 ACEEE DOI: 01.IJRTET.7.2.551 93

Figure 3. Balanced diffrential amplifier with combination of diode connected and current-source load

II. SIMULATED RESULTS The proposed circuits were simulated using EDA tool Tanner V14.1 with 0.25 CMOS technology. The simulated results agree with theory discussed as above. The MOSFETs were selected with different dimensions and results were simulated. One of the combination of suitable dimensions of load MOSFETs is presented here. The supply voltage selected was 2.5V with 60A bias current, thus total quiescent power consumption was 3mW.

T ABLE I. SIMULATED RESULTS

CONCLUSIONS The differential gain of combined load balanced differential amplifier gets increased. The differential voltage gain BDA with combined load came out to be less than 5 times the gain as that of diode connected load, that was due to channel length modulation which becomes significant for short channel MOSFETs. The experimental results verifying the operation of the proposed circuits are provided.

Full Paper Int. J. on Recent Trends in Engineering and Technology, Vol. 7, No. 2, July 2012 REFERENCES

[1] A S Sedra and K C Smith Microelectronic circuits theory and applications Oxford University press, 7th edition 2010, pp. 565-689 [2] Apisak Worapishet, Andreas Demosthenous, and Xiao Liu, A CMOS Instrumentation Amplifier With 90-dB CMRR at 2-MHz Using Capacitive Neutralization: Analysis, Design Considerations, and Implementation, IEEE transactions on circuits and systemsi: regular papers, vol. 58, no. 4, april 2011 [3] F. Corsi and C. Marzocca, An approach to the Analysis of the CMOS Differential Stage with Active Load and Single-Ended output, IEEE Trans edu.,vol. 46, pp. 325-328, Aug 2003. [4] Z. Butkovic and A. Szabo, Analysis of the CMOS Differential Amplifier with Active Load and Single-Ended Output, IEEE MELECON, pp. 417-420., May 2004. [5] Hussain Alzaherand Mohammed Ismail, A CMOS Fully Balanced Differential Difference Amplifier and its Aplications, IEEE Transaction on circuits and system, Vol. 48, No. 6, June 2001 [6] B Razavi, Design of analog CMOS Integrated Circuits, Tata Megraw Hill, 2002 edition, pp. 53-59, 124-126. [7] Xuguang Zhang, A Novel CMOS OTA Based on BodyDriven MOSFETs and its Applications in OTA-C Filters, IEEE Transaction on circuits and system, Vol. 54, No. 6, June 2007. [8] Soliman A. Mahmoud, The Differential Difference Operational Floating amplifier: a New Block for Analog Signal Processing in MOS Technology, IEEE Transaction on circuits and system, Vol. 45, No. 1, January 1998.

94

- A Op 610Uploaded bytort1
- COMMAND-converted.docxUploaded byomkar1998
- 65n06Uploaded byMartinCharly
- viper20spUploaded bygotcha75
- Power Consumption of a MOSFETUploaded byandre de beer
- gpt13n50_gpt13n50dUploaded byalejandro
- TSPICE TutorialUploaded byfsahmed
- BLF278 wideband rf power mosfetUploaded byAmador Garcia III
- viper50a[1]Uploaded byPedro Agostinho
- BSH105Uploaded byKumar Amit Verma
- EE_255_EXP_7Uploaded byHarsha J K
- Po3.pdfUploaded byHưng HQ
- amplifierUploaded bysrabon1059
- analog electronic circuitsUploaded byankitkr09
- elektronika_datasheetUploaded byproxyeaaah
- 160Uploaded byArshia Gh
- nitronex_an9Uploaded bysanghomitra
- 2SK3918Uploaded byAndres Camachoi
- F datasheetUploaded byTerelia Kinan Gallen
- irs2001mpbf - IRS2001MPBF HIGH AND LOW SIDE DRIVERUploaded byAnonymous R0s4q9X8
- md129Uploaded byLiu Wen
- introduction-to-novel-approaches-to-low-leakage-and-area-efficientUploaded byIJSTR Research Publication
- New Microsoft Office Word DocumentUploaded byNakka Obulesh
- RK9410 Mosfet 30v 7aUploaded byMilee Kitićć
- Vlsi Design TechniquesUploaded bySekar Natarajan
- Sistema de confiabilidadUploaded byDawn Osborne
- EEE SUST Syllabus Session 2011-12Uploaded byShahadat Hussain Parvez
- BF5030 Data SheetsUploaded bytarpino
- Rca Chassis Ctc185 Training Manual [ET]Uploaded byKeith Geusic
- Bdm a 77 071 Tr, Spice2 Mos Modelling HdbkUploaded byRGK77

- Enhancing Data Storage Security in Cloud Computing Through SteganographyUploaded byIDES
- Genetic Algorithm based Layered Detection and Defense of HTTP BotnetUploaded byIDES
- Cloud Security and Data Integrity with Client Accountability FrameworkUploaded byIDES
- Artificial Intelligence Technique based Reactive Power Planning Incorporating FACTS Controllers in Real Time Power Transmission SystemUploaded byIDES
- Responsive Parameter based an AntiWorm Approach to Prevent Wormhole Attack in Ad hoc NetworksUploaded byIDES
- State EstimationUploaded byshivagokul
- Selfish Node Isolation & Incentivation using Progressive ThresholdsUploaded byIDES
- Secure Multi-Party Negotiation: An Analysis forElectronic Payments in Mobile ComputingUploaded byIDES
- Design and Performance Analysis of Genetic based PID-PSS with SVC in a Multi-machine System Considering Detailed ModelUploaded byIDES
- Permutation of Pixels within the Shares of Visual Cryptography using KBRP for Enhanced SecurityUploaded byIDES
- Optimal Placement of DG for Loss Reduction and Voltage Sag Mitigation in Radial Distribution Systems using ABC AlgorithmUploaded byIDES
- Assessing Uncertainty of Pushover Analysis to Geometric ModelingUploaded byIDES
- Study of Structural Behaviour of Gravity Dam with Various Features of Gallery by FEMUploaded byIDES
- Various OSI Layer Attacks and Countermeasure to Enhance the Performance of WSNs during Wormhole AttackUploaded byIDES
- 13Uploaded bySalah Hassan
- 1-140204053501-phpapp01Uploaded byAaqib Ihraz
- High Density Salt and Pepper Impulse Noise RemovalUploaded byIDES
- Genetic Algorithm based Mosaic Image Steganography for Enhanced SecurityUploaded byIDES
- Mental Stress Evaluation using an Adaptive ModelUploaded byIDES
- Optimized Neural Network for Classification of Multispectral ImagesUploaded byIDES
- Opportunities and Challenges of Software CustomizationUploaded byIDES
- Texture Unit based Monocular Real-world Scene Classification using SOM and KNN ClassifierUploaded byIDES
- Ontology-based Semantic Approach for Learning Object RecommendationUploaded byIDES
- 204498292 Band Clustering for the Lossless Compression of AVIRIS Hyperspectral ImagesUploaded byrnagu1969
- Rotman Lens Performance AnalysisUploaded byIDES
- Blind Source Separation of Super and Sub-Gaussian Signals with ABC AlgorithmUploaded byIDES
- Microelectronic Circuit Analogous to Hydrogen Bonding Network in Active Site of -lactamaseUploaded byIDES
- Low Energy Routing for WSN’sUploaded byIDES
- 3-D FFT Moving Object Signatures for Velocity FilteringUploaded byIDES
- Comparative Study of Morphological, Correlation, Hybrid and DCSFPSS based Morphological & Tribrid Algorithms for GFDDUploaded byIDES

- Lec 1-Solid State Devices-IITM,NPTELUploaded byPrasanth Yg
- G3VM_101PR_0314Uploaded bykp
- 33259990 Electronics Exposed for School StudentsUploaded byprivatenaseer
- Low Power, Noise-Free Divided By 4/5 Counter Using Domino Logic: A SurveyUploaded byIjsrnet Editorial
- Draft Syllabus for Electronics and Communication Engineering.pdfUploaded bySumon Dhara
- EDC Lab ManuelUploaded byRuban Ponraj
- Introduction to VLSI SystemUploaded byyugant7
- International Rectifier IRFP2907Uploaded byscribd20110526
- General_Power_and_swicthing_system_of_La.pdfUploaded byHas Biansyah
- Solman HomeworkUploaded byFaishal Muhyiddin
- BSNL-BIXUploaded bybhag
- PDF Sanken 882276Uploaded byMoises Celoso
- Data SheetUploaded byhrm
- FGMOS SimulationUploaded bym1cr0sp1ce
- UPA2756GR.pdfUploaded byRjib
- Elements of Physical DesignUploaded byrajanikumar23
- DS8205LM-05Uploaded bypiron123
- Preamplifier IntroductionUploaded byrkarthikselvan
- speed of moter controlUploaded byAman Kumar
- 5990-3356ENUploaded byNguyen Toan Thang
- Design methodology based on carbon nanotube field effect transist.pdfUploaded byVijay Kumar Pulluri
- Water Level Indicator With Numeric Display_Final (2)Uploaded byRahul Pandey
- Media(7)Uploaded byVishal Nair
- Motor Drive PosterUploaded byprio aji widiantoro
- Ece Analysis.docUploaded byKrishna Krishna
- Electronics DevicesUploaded byvenukareddy
- IRFP240Uploaded byHugo Jimenez
- Ntmfs4119n dUploaded byRafael Hurtado
- circutio flyback 1.pdfUploaded byJuan Carlos Caballero
- Chapter 5 MOSFET Theory and ApplicationsUploaded byanjugadu