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TO-18
T s t g, T j
January 1989
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2N2369
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 C/W C/W
Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain
Min.
Typ.
Max. 0.4 30
Unit A A V V V V
40 40 15 4.5 0.2 0.7 40 20 20 500 650 2.5 6 9 13 4 13 12 18 0.75 0.25 0.85 120
CE S
CEO *
EBO
(s at )*
V V
(s at )
h F E*
fT C CBO ts to n t off
Transition Frequency Collector-base Capacitance Storage Time Turn-on Time Turn-off Time
MHz pF ns ns ns
I C = 10 mA V CC = 10 V I B1 = I B2 = 10 mA I C = 10 mA I B1 = 3 mA I C = 10 mA I B1 = 3 mA V CC = 3 V V CC = 3 V I B 2 = 1.5 mA
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2N2369
D G I H E F
L C B
0016043
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2N2369
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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