DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3113
SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.

ORDERING INFORMATION
PART NUMBER 2SK3113 2SK3113-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)

FEATURES
Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate voltage rating 30 V Avalanche capability ratings (TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1

VDSS VGSS ID(DC) ID(pulse) PT1

Note2

600

V V A A W W C C A mJ (TO-252)

30 2.0 8.0 20 1.0 150 55 to +150 2.0 2.7

Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3

PT2 Tch Tstg IAS EAS

Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 3. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D13336EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan

The mark

shows major revised points.

1998, 2001

2SK3113
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/s TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS = 10 V RG = 10 , RL = 10 2.5 0.5 3.3 290 60 5 7 2 22 9 9 2.4 2 0.9 0.9 2.0 4.4 MIN. TYP. MAX. 100 10 3.5 UNIT

A A
V S pF pF pF ns ns ns ns nC nC nC V

s C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T. RL PG. RG VDD ID

90% 90%

VGS VGS
Wave Form

10%

VGS

90%

IAS ID VDD

ID ID
Wave Form

0 10%

10%

Starting Tch = 1 s Duty Cycle 1%

td(on) ton

tr

td(off) toff

tf

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA 50 RL VDD

PG.

Data Sheet D13336EJ3V0DS

2SK3113
TYPICAL CHARACTERISTICS (TA = 25C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100

dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm

80

60

40

20

0 0

20

40

60

80

100

120 140

160

Tch - Channel Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA 100

TC = 25C, Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm

=2 S 0V )

ID - Drain Current - A

10
a d(

ID(pulse)
10 0

PW

10

G tV

n) (o DS

Lim

ite

ID(DC)
10 Di 0 ss m ipa s tio DC n Lim ite d

Po we r

m s

10

m s

0.1 1

10

100

1000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - C/W

Rth(ch-A) = 125C/W 100

10 Rth(ch-C) = 6.25C/W 1

0.1 Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 10 100 1000

0.01 10

100

1m

10 m

100 m

PW - Pulse Width - s

Data Sheet D13336EJ3V0DS

2SK3113

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 5 4 3 2 1 VGS = 10 V 6V 8V

ID - Drain Current - A

FORWARD TRANSFER CHARACTERISTICS

100 Tch = 125C 75C 10

ID - Drain Current - A

1.0

Tch = 25C 25C

0.1 VDS = 10 V Pulsed 15

10

20

30

40

10

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

| yfs | - Forward Transfer Admittance - S

5.0
VGS(off) - Gate Cut-off Voltage - V

100

VDS = 10 V Pulsed

4.0

10 Tch = 25C 25C 75C 125C

3.0

2.0

1.0 VDS = 10 V ID = 1 mA 0 50 0 50 100 150

0.1 0.01

0.1

1.0

10

Tch - Channel Temperature - C

ID - Drain Current - A

RDS(on) - Drain to Source On-state Resistance -

RDS(on) - Drain to Source On-state Resistance -

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 7 6 5 4 3 2 1 0 0 5 10 15 ID = 2.0 A 1.0 A Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 7 6 5 4 3 2 1 0 0.1 1 ID - Drain Current - A 10 VGS = 10 V 20 V

VGS - Gate to Source Voltage - V

Data Sheet D13336EJ3V0DS

2SK3113

RDS(on) - Drain to Source On-state Resistance -

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9

IF - Diode Forward Current - A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

8 7 6 5 4 3 2 1 1A

ID = 2 A

100

10

1.0 VGS = 10 V 0.1 0V Pulsed 1.5

VGS = 10 V 0 50 0 50 100 150

0 0.5 1.0

Tch - Channel Temperature - C

VF(S-D) - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 10000

SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

td(off) 10 tf td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 1 ID - Drain Current - A 10

1000 Ciss 100 Coss 10 VGS = 0 V f = 1 MHz 1 0.1 1 10 Crss 100

0.1 0.1

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000

trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V

600

1000

VDD = 450 V 300 V 150 V

VGS

12 10 8 6

400

100

200 VDS 0 0 4 8 12

4 2 0 16

10 0.1

1.0

10

100

ID - Drain Current - A

QG - Gate Charge - nC

Data Sheet D13336EJ3V0DS

VGS - Gate to Source Voltage - V

di/dt = 50 A/s VGS = 0 V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 800 ID = 2.0 A 14

2SK3113

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100

120

SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 VGS = 20 0 V IAS 2.0 A

IAS - Single Avalanche Current - A

Energy Derating Factor - %

100 80 60 40 20 0 25

10 IAS = 2.0 A 1.0 RG = 25 VDD = 150 V VGS = 20 0 V Starting Tch = 25C 0.1 10 100 1m 10 m

EAS

=2

.7 m

50

75

100

125

150

L - Inductive Load - H

Starting Tch - Starting Channel Temperature - C

Data Sheet D13336EJ3V0DS

2SK3113
PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

2) TO-252 (MP-3Z)

1.5 0.1

+0.2

5.0 0.2
1.6 0.2

0.5 0.1
0.8 4.3 MAX.

4
5.5 0.2 13.7 MIN.

6.5 0.2 5.0 0.2 4

1.5 0.1

+0.2

6.5 0.2

2.3 0.2

2.3 0.2 0.5 0.1

7.0 MIN.

1.1 0.2
+0.2

0.5 0.1
2.3 2.3
0.75

0.5 0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)

+0.2

0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)

EQUIVALENT CIRCUIT
Drain

Gate

Body Diode

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

0.7

1.1 0.2

2.0 MIN.

5.5 0.2 10.0 MAX.

1.0 MIN. 1.8TYP.

Data Sheet D13336EJ3V0DS

2SK3113

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
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