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February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V RDS(on) = 0.125 @ VGS = -4.5 V.
Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
DC/DC converter Load switch Motor drives
S
SuperSOT -3
TM
G
TA = 25C unless otherwise noted
Parameter
Ratings
-30
(Note 1a)
Units
V V A W C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
C/W C/W
Device
FDN360P
Reel Size
7
Tape Width
8mm
Quantity
3000 units
FDN360P Rev. D
FDN360P
Electrical Characteristics
Symbol Parameter
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
Typ
Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125C VGS = -4.5 V, ID = -1.5 A VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -2 A
-1
-3
V mV/C
ID(on) gFS
-20 5.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
420 140 60
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
9 8 18 6
18 16 29 12 7
ns ns ns ns nC nC nC
5 1.7 1.8
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% b) 270C/W when mounted on a 0.001 in2 pad of 2 oz. Cu.
FDN360P Rev. D
FDN360P
Typical Characteristics
20 -6.0V -5.0V -4.5V 12 -4.0V 8 -3.5V 4 -3.0V 0 0 1 2 3 4 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= -10V -ID, DRAIN CURRENT (A) 16 2.5
0.5 0 4 8 12 16 20
1.2
1.1
0.15
0.1
TJ=125 C 25 C
o
0.9
0.05
125
150
0 2 3 4 5 6 7 8 9 10
TJ=-55 C
125 C
TJ=125 C 25 C -55 C
o o
0.1
0.01
0 1 2 3 4 5
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN360P Rev. D
FDN360P
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID= -2.0A 8 VDS= -5.0V 6 -10V
(continued)
-15V
120
0 0 2 4 6 8 10
0 0 6 12 18 24 30
100
10
RDS(ON) Limit
100s 1ms
40
1 1s 0.1 VGS= -10V SINGLE PULSE RJC=270 C/W TA=25 C 0.01 0.1 1
o o
20
10
0
10 100
0.0001
0.001
0.01
0.1
10
100
1000
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
t1
t2
0.001 0.0001
FDN360P Rev. D
3P
SSOT-3 Std Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7" Dia D87Z TNR 10,000 13"
3P
3P
3P
Components Trailer Tape 300mm minimum or 75 empty pockets Leader Tape 500mm minimum or 125 empty pockets
F E2 B0 Wc
Tc K0
P1
A0
B0
2.77 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.30 +/-0.10
T
0.228 +/-0.013
Wc
5.2 +/-0.3
Tc
0.06 +/-02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
0.5mm maximum
Component Rotation
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
Dim D min
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 0.429 7.9 10.9 0.311 0.429 7.9 10.9
8mm
13" Dia
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in: inches [mil limeters]
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx CoolFET CROSSVOLT E2CMOSTM FACT FACT Quiet Series FAST FASTr GTO HiSeC
DISCLAIMER
ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6 SuperSOT-8
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D
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