AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description
The AO4704 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS (V) = 30V ID = 13 A RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 13m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested

SOIC-8
S/A S/A S/A G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K

G S A

Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter MOSFET VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 12 TA=25C 13 ID AF Continuous Drain Current TA=70C 10.4 IDM Pulsed Drain Current B 40 VKA Schottky reverse voltage Continuous Forward CurrentAF Pulsed Diode Forward Current Power Dissipation Avalanche Current B
B

Schottky

Units V V A

TA=25C TA=70C TA=25C TA=70C

B

IF IFM PD IAR EAR TJ, TSTG 3.1 2 20 60 -55 to 150

30 4.4 3.2 30 3.1 2

V A

W A mJ

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range

-55 to 150

Alpha & Omega Semiconductor, Ltd.

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AO4704

Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 28 54 21

Max 40 75 30

Units C/W C/W C/W

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 36 67 25

Max 40 75 30

Units C/W C/W C/W

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4704

Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12.2A Forward Transconductance VDS=5V, ID=13A 30 Diode + Schottky Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=13A TJ=125C 0.6 40 9.1 13.3 10.5 37 0.45 0.5 5 3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.4 322 168 0.86 30.5 VGS=10V, VDS=15V, ID=13A 4.6 8.6 6.2 VGS=10V, VDS=15V, RL=1.1, RGEN=0 IF=13A, dI/dt=100A/s IF=13A, dI/dt=100A/s 4.8 55 7.3 20.3 8.4 9 7 75 11 25 12.5 235 1.1 36 4050 11.5 16.5 13 1.1 Min 30 0.007 3.2 12 0.05 10 20 100 2 mA nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode+Schottky Reverse Recovery Time Body Diode+Schottky Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4704

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 50 40 ID(A) 30 20 VGS =2.0V 10 0 0 1 2 3 4 5 VDS(Volts) Figure 1: On-Regions Characteristics 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics 10V VGS =3V VGS =2.5V ID(A) 30 VGS=5V 25 20 15 10 25C 125C

13 Normalize ON-Resistance 12 RDS(ON)(m) 11 10 9 8 7 0 5 10 15 20 25 30 VGS =10V VGS =4.5V

1.8 ID=13A 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V

ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

30 25 RDS(ON)(m) 20 15 10 5 ID=13A

1E+01

1E+00 125C IS(A) 125C 1E-01

25C

25C

1E-02 FET+SCHOTTKY 1E-03 0.0 0.2 0.4 0.6 0.8 1.0

0 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

VSD(Volts) Figure 6: Body-Diode Characteristics (Note F)

Alpha & Omega Semiconductor, Ltd.

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AO4704

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 4 VGS(Volts) 3 2 1 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics VDS=15V ID=13A Capacitance (pF) 10000 Ciss

1000 Coss FET+SCHOTTKY

100 RDS(ON) limited 10 ID(A) 10ms 1s 1 T J(Max) =150C T A =25C 0.1 0.1 1 10 10s DC

10s 100s Power (W) 100 1ms 0.1s

50 40 30 20 10 0 0.01

0.1

10

100

1000

VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=40C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD T on Single Pulse

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com