Professional Documents
Culture Documents
The most important mechanism that dislocation is generated in the bulk of a crystal Frank-Read mechanism
We have a segment of dislocation firmly anchored at two points (red circles). The force f=bres The dislocation segment responds to the force by bowing out. If the force is large enough, the critical configuration of a semicircle may be reached. max=Gb/l l If the shear stress is higher than Gb/l, the radius of curvature is too small to stop further bowing out. The dislocation is unstable and the following process now proceeds automatically and quickly.
l () l (bl) (2sin)
sin
sin
f = bl Gb 2 = 2 bl = Gb 2 sin Gb = sin l
90o
max =
Gb l
The two segments shortly before they touch. Since the two line vectors at the point of contact have opposite signs, the segments on contact will annihilate each other. It will immediately form a straight segment after contact, and a nice dislocation loop which will expand under the influence of the resolved shear stress. The regained old segment will immediately start to go through the whole process again, and again, as long as the force exist. Stable configuration after the process. The loop is free to move.
One of the main mechanisms for dislocation multiplication under stress is the Frank-Read mill or Frank-Read source. The operation of a Frank-Read source can be observed on a dislocation segment pinned at its ends.
Nucleation of Dislocation
If dislocations are not formed by dislocation generators (Frank-Read source), then they must be created by a nucleation process. Nucleation process created in two ways:
Homogeneous nucleation
formed in a perfect lattice by the action of a simple stress, no agency other than stress being required. requires extremely high stresses.
Heterogeneous nucleation
the dislocations are formed with the help of defects present in the crystal, perhaps impurity particles. Defects make the formation of dislocations easier by lowering the applied stress required to form dislocations
If dislocations are not formed by Frank-Read sources, then they must be nucleated heterogeneously.
The pits connected with the dislocation always have pointed extremities.
Observing dislocation in crystal by etching reagent, which forms an etch pit on the surface of a crystal at each point where a dislocation intersects the surface. The velocity of a dislocation moving under a fixed applied stress = distance that a dislocation moved by the time
Optical image of etch pits in silicon carbide (SiC). The etch pits correspond to intersection points of pure edge dislocations a with Burgers vector < 1120 >and the dislocation line direction 3 along [0001] (perpendicular to the etched surface). Lines of etch pits represent low angle grain boundaries
Bend Gliding
The bending of crystals can be explained in terms of Frank-Read or other sources. Let equal couples (of magnitude M) be applied to the ends of the crystal. The effect of these couples is to produce a uniform bending moment (M) throughout the length of the crystal. The stress distribution across any cross-section is
x =
My I M : the bending moment y : the vertical distance measured from the neutral axis I : the moment of inertia of the cross - section
The shear stress component parallel to the slip plane. The sense of the shear stress changes its sign as it crosses the neutral axis The shear stress is zero at the neutral axis and a maximum at the extreme ends of the slip plane. upper: compressive stress; lower: tensile stress
positive edge :
move toward the surface (high stress region) and disappear
negative edge :
move toward the specimens neutral axis (decreasing shear stress)
neutral axis :
free of dislocations, not be stressed above the elastic limit, deformation will be elastic and not plastic
Rotational Slip
Type of deformation due to dislocations: simple shear, bending, rotational slip. Rotational slip
Can be explained in terms of screw dislocations lying on the slip plane. Required more than one set of dislocations (slip plane must contain more than one slip direction) Ex. FCC , and HCP
A double array of screw dislocations. This array does not have a long-range strain field.
Slip plane
The crystallographic plane along which the dislocation line traverses
Slip direction
Direction along which dislocation motion
Slip system
The combination of slip direction and slip plane
Dislocation density
It is expressed as the total dislocation length per unit volume (cm/cm3) or, equivalently, the number of dislocations that intersect a unit area of a random section
q a a a c c c c c
Two ways in which a simple cubic lattice can be sheared while still maintaining the lattice symmetry
Shear in a close-packed direction (mn) Shear in a nonclose-packed direction (qr)
However, strain energy of a dislocation is proportional to b2. Thus, a dislocation with a b equal to the spacing of atoms in a close-packed direction would be unique.
r = cos cos
r =
A = A0 / cos
(c)2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.
When a crystal possesses several crystallographically equivalent slip systems, slip will start first on the system having the highest resolved shear stress. It is not possible to produce slip on a given plane when the plane is either parallel or perpendicular to the axis of tensile. The maximum shear stress occurs when both and equal 45o.
r = 0.5
a curve
several slip systems have nearly equal resolved shear stresses.
b curve
1 : only one slip plane
Easy glide
110 49 39 6.2
Zinc, cadmium and magnesium possess both a low critical resolved shear stress and a single primary slip plane (basal plane)