SMD Power Transistor (NPN) 2SD669XD/2SD669AXD

SMD Power Transistor (NPN)

Features
Designed for general purpose power applications Rugged and reliable RoHS compliance D-PACK (TO-252)

Mechanical Data
Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams

Maximum Ratings (T Ambient=25C unless noted otherwise)

Symbol Description 2SD669XD Value 120 V 2SD669AXD 160 5 1.5 3 2 -40 to +150 V A A W C Unit

VCEO VEBO IC ICP PD TJ, TSTG

Collector-Emitter Voltage

Emitter-Base Voltage Collector Current Continuous Collector Current Peak Power Dissipation at TC=25C Operating and Storage Junction Temperature Range

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com

Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415

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SMD Power Transistor (NPN) 2SD669XD/2SD669AXD

Thermal Characteristics
Symbol Description Thermal Resistance from Junction to Case Value 4.5 Unit C/W

RthJC

Electrical Characteristics (T Ambient=25C unless noted otherwise)

Symbol BVCBO Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 2SD669XD 2SD669AXD Min 180 120 V 160 5 10 60 DC Current Gain hFE2 VCE(SAT) VBE fT Cob Note: Pulse test. Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance 140 14 30 1 1.5 V V MHz pF VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz 320 V A IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) IC=10mA, RBE= Typ Max Unit V Test Conditions IC=1mA, IE=0

BVCEO

BVEBO ICBO hFE1

Emitter to Base Breakdown Voltage Collector Cut-off Current

Classification of hFE1
Rank Range B 60-120 C 100-200 D 160-320

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SMD Power Transistor (NPN) 2SD669XD/2SD669AXD

Typical Characteristics

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SMD Power Transistor (NPN) 2SD669XD/2SD669AXD

Dimensions in mm

D-PACK (TO-252)

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SMD Power Transistor (NPN) 2SD669XD/2SD669AXD

Ordering Information 2SD669 A X D XX TR30
Package Code TR30, 13Tape & Reel,RoHS Factory Location Code Package Type: TO-252 Refer to Classification of hFE A: 160V , Blank: 120V Taitron General Purpose Transistor

How to contact us:

US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com

TAITRON COMPONENTS MEXICO, S.A .DE C.V.

Hacienda de Corralejo No.80, Col. Bosques de Echegaray, Naucalpan, Estado de Mxico 53310 Mexico Tel: +52-55-5560-1519 Fax: +52-55-5560-2190

TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI

5F-2, No. 77, Sec. 1, Hsin Tai Wu Road, Hsi-Chih, Taipei Hsien, Taiwan R.O.C. Tel: 886-02-2698-8878 Fax: 886-02-2698-8879

TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE

METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931

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