SEMISTACK - IGBT

Circuit B6CI Irms 32 Vac (Vdc) 250 350

-

Types
SKS 32F B6U+E1CIF+B6CI 12 V06

Symbol Irms max Tamb = 35 C Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling

Conditions No overload; 10 kHz 150% overload, 60s every 10min (Iov/IN) 200% overload, 10s every 10min (Iov/IN) Absolute maximum switching frequency Advise maximum switching frequency Type EPCOS B43303A0158 Equivalent capacitor bank Discharge time of the capacitor bank
Max DC voltage applied to capacitor bank

SEMITOP Stack
Three-phase inverter

1)

SKS 32F B6U+E1CIF+B6CI 12 V06

Values 32 36/24 40/20 600 15 10 1500/200 3000/400 220 350 250

Units

A A A V kHz kHz F/V F/V s V Vac C C C V Kg V A 3 m /h W %

SK 45 GB 063 SK 30 GAL 123 SK 95 D 12 P 35/260F SKHI 20opA Preliminary Data

-20%/+15% Max network voltage (line side) Junction temperature for continous operation -40+125 without requirement of reforming of capacitors -20+40

-20+55

Losses Current sensor Thermal trip Others components Options

Features
Compact design Hall Effect Current Sensor Circuit for soft charge the capacitors IGBT Braking chopper Vce monitoring

60Hz/1min Aprox. total weight Fan, DC power supply Current Consumption (per fan) Required air flow (per fan) B6CI , Converter at Pmax, Tamb= 35 C Efficiency Hall-type LEM LA 55-P normally closed Relay Metaltex J1NAC3

2500 5.5 24 0.11 42.5 306 96

71

Typical Applications
AC Motor Control Elevator Industrial

Tests

Functional Test Short Circuit Test Visual Inspection -

1) Photo non- contractual

B6U+E1CIF+B6CI

Power Electronics Systems - SEMISTACK

10/7/2007

by SEMIKRON

SEMISTACK - IGBT
Dimensions in mm

Stack design may vary depending upon the version. Please contact SEMIKRON for further details

Electrical Data

Power Electronics Systems - SEMISTACK

10/7/2007

by SEMIKRON

SEMISTACK - IGBT
Connectors
Connector Pin
CN1:1 CN1:2 CN1:3 CN1:4 CN1:5 CN1:6 CN1:7 CN1:8 CN1:9 CN1:10 CN2:1 CN2:2 CN2:3 CN2:4 CN2:5 CN2:6 CN2:7 CN2:8 CN2:9 CN2:10 CN2:11 CN2:12 CN2:13 CN2:14 CN3:1 CN3:2 CN3:3 CN3:4 CN3:5 CN3:6 CN3:7 CN3:8 CN3:9 CN3:10 CN4:1 CN4:2 CN4:3 CN4:4 CN4:5 CN4:6 CN4:7 CN4:8 CN4:9 CN4:10 CN4:11 CN4:12

Symbol

Description min.

Values typical
0/15 (CMOS) 0/15 (CMOS) 0/15 (CMOS) 0 0/15 (CMOS) 0/15 (CMOS) 14,0 14,0 0 0 0/15 (CMOS) 0/15 (CMOS) 0/15 (CMOS) 0 0/15 (CMOS) 0/15 (CMOS) 0/15 (CMOS) 0 15 15 0 0 15,6 15,6

Units max.
V V V V V V V V V V V V V V V V V V V V V V

TOP W ER W BOT W GND Vin(BRK) ER BRK +Vs +Vs GND GND TOP U ER U BOT U GND TOP V ER V BOT V GND +Vs +Vs GND GND

Top phase W input signal Vce phase W error output signal Bot phase W input signal Ground Break input signal Vce Break error output signal Supply voltage Supply voltage Ground Ground Top phase U input signal Vce phase U error output signal Bot phase U input signal Ground Top phase V input signal Vce phase V error output signal Bot phase V input signal Ground Supply voltage Supply voltage Ground Ground NC NC Supply Voltage (positive) Supply Voltage (negative) Ground Output Hall phase U Output Hall phase V NC Ground Supply Voltage (positive) Supply Voltage (negative)

14,0 14,0

15,6 15,6

+15V -15V GND HALL U HALL V GND +15V -15V

14,5 -14,5

15 -15 0

15,5 -15,5

V V V

14,5 -14,5

0 15 -15

15,5 -15,5

V V V

R S T EARTH U V W -UD BR +UD/BR

Input Phase R Input Phase S Input Phase T NC NC Output U Inverter Phase Output V Inverter Phase Output W Inverter Phase DC Link Negative Break Resistor Input DC Link Positive Reference and Break Resistor Input NC Charge Input Signal Ground NC

176 176 176

220 220 220

253 253 253

V V V

220 220 220

253 253 253

V V V

K1:1 K1:2 K1:3 K1:4

CIS GND

0/18 0

26,5

V V

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.

Power Electronics Systems - SEMISTACK

10/7/2007

by SEMIKRON