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Overview
Exact chamber environment control is relatively new Various sensors (pressure, gas flow, gas composition, temperature) are needed to accomplish it. An interesting transition to on-wafer sensors holds much promise...
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Thermocouples
operating principle
Peltier-Seebeck effect, up to 3000o C T gradient along wires of different materials develop different emf emf measures junction T platinum rhodium alloy, or silicon based sensitivity 100-200V /oK
problems
big problems with shield design radiative effects low signal -- need amplifiers or use thermopile invasive gas T measurement is very hard, especially < 10-4 torr
comments
inexpensive, low drift accuracy ~+/- 5oC at 800oC
Lecture 20: On-Wafer Sensors
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issues
implementation difficulty invasive calibration
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Pyrometry
operating principle
hot objects radiate radiation is wavelength dependent radiation model for black bodies (Planck's Law)
R =
37418
5 (e14388 / T 1)
issues
surface properties affect radiation multiple internal reflections emissivity is wavelength and geometry dependent can change during processing calibrations via thermocouples, difficult
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Pressure Sensors
direct gauges
displacement of a solid or liquid surface capacitance manometer, McLeod pressure transducer
indirect gauges
measurement of a gas related property momentum transfer, charge generation
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Capacitance manometer
basic idea
pressure differential causes displacement of diaphragm sense capacitance change between diaphragm and fixed electrode resolution 10-2 % at 2 hertz and 10-3 torr
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Mass Spectrometers
two types
flux analyzers : sample gas through aperture partial pressure sensors : analysis in exhaust stack
issues
recombination in mass spec tube changes indistinguishable species : (ex: CO, N2 and Si have same amu (28)) pressure measurements are removed from processing chamber
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RGA
basic idea
special kind of mass spectrometer measures gas compositions works at low vacuum < 10-5 torr ion beam is produced from gas sample by e-bombardment beam is collimated by electric fields q/m ratio of ions determines bending in B field detection of ions via a Faraday cup
issues
quadrupole (magnetless design) very noisy !! good for diagnostics can withstand 500 oC can also be used at higher pressures with differential pumps mass range 50 amu, resolution 2 amu,
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Sensarray products
Lecture 20: On-Wafer Sensors
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Calibration is an issue...
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IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 11, NO. 2, MAY 1998 A Novel In Situ Monitoring Technique for Reactive Ion Etching Using a Surface Micromachined Sensor Michael D. Baker, Frances R. Williams, Student Member, IEEE, and Gary S. May, Senior Member, IEEE
Lecture 20: On-Wafer Sensors
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On the bench...
In the chamber...
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Our Vision
In-situ sensor array, with integrated power and telemetry
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Issues
Sensor arrays
inexpensive, modular environmentally isolated transparent to wafer handling robotics on-board power & communications
Operating mode
no equipment modifications !! Smart dummy wafer for in-situ metrology
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Current Design
Integrated Sensor Wafer Test Design 57 etch-rate sensors on a 4 wafer Full-wafer addressing of each sensor from a single die Redundant interconnect to enhance yield Four styles of sensor, selectable from a single die On-board current-sourcing Wired power and communications (at first) Expandable to allow wireless power and communication
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Experimental Procedure
Bond wires to wafer
solder wires to strip header glue header to wafer edge wire bond from header to wafers bond pads
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Pictures
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Results
8 sensors (in a row) wired together in series Everything works perfectly! In-Situ XeF2 test performed
XeF2 etch rate much too fast (~0.2m/sec) Sensor structure only 0.45 m thick, gone in 2 sec Sensors wired in series so when one etches through, all measurements stop
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Data - Etch #3
P o ly s ilic o n E t c h -R a t e vs . Tim e fo r E x p e rim e n t # 3 2000 Filtered E tc h-Rate (A /s ec )
1500
1000
500
0 0 1 2 3 4 5 Tim e (s e c ) 6 7 8 9 10
4000
3000
2000
1000
0 0 1 2 3 4 5 Tim e (s e c ) 6 7 8 9 10
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Developed and tested at the UC Berkeley Microfabrication Laboratory. 4 sensors, wafer covered with layer of epoxy LED used for real-time, one-way transmission
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OnWafer technologies Inc, a Berkeley startup, was founded in 2000. Today OnWafer products are in use in all of the major fabs around the world, and by all the major tool makers (LAM, Applied, TEL, Nikon).
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IR Dongle IR Dongle
Shipper Shipper
Lecture 20: On-Wafer Sensors
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The Approach
processing equipment
OnWafer
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PlasmaTemp SensorWafer
42 sensors/wafer, 1Hz 0.5 C accuracy Rechargeable. Functional up to 140 C, several kW RF Suitable for oxide/poly plasma etch Non-contaminating, cleanable and reusable
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main etch
Low He
Increased He
pre-etch
over etch
de-chuck
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main etch
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before data is hotter, further, the prebefore data is hotter, further, the preetch step is significantly less uniform etch step is significantly less uniform
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Example - Comparison between 8 PEB plates on a 193nm wafer track (+/- 0.1C accuracy)
Worst! Best!
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Data collection in two 10-minute cassette-to-cassette missions Data collection in two 10-minute cassette-to-cassette missions
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Six TEL ACT 88plates used for 90nm CD lines (193nm Lithography) Six TEL ACT plates used for 90nm CD lines (193nm Lithography)
P1
Lecture 20: On-Wafer Sensors
P2
P3
P4
P5
P6
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Much more than you ever wanted to know about Post Exposure Bake
Overshoot Steady
Heating
Cooling
Chill
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Multi-Zone Control
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AutoCal
Output
Offset Values Optimized for Both Within-Plate and Plate-to-Plate Thermal Profile Uniformities
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Before
Target = 120oC
After
2.700oC
0.175oC
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Continued high R 2 during steady state due to poor temperature control in single-zone plate design
Lecture 20: On-Wafer Sensors
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AutoCD
Output
Offset Values Optimized for Both Within-Plate and Plate-to-Plate Critical Dimensions Uniformities
Customer Provided
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CDU Improvement
3.5 3 2.5 2 AutoCD 1.5 1 0.5 0 Across Plate Plate to Plate POR AutoCal AutoCD AutoCal POR
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Wafer
Litho Litho
Etch Etch
How can we improve the across-wafer CDU? How much can we improve CDU?
Lecture 20: On-Wafer Sensors
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PEB step: temperature of multi-zone bake plate Etch: backside pressure of dual-zone He chuck Exposure
dose
PEB / Develop
Etch
temperature
Optimizer
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Si
Photo-/RF Transmitter Data Processing, Storage Unit Battery Data Acquisition Unit
Prototyping a zero-footprint metrology wafer with optical detection unit and encapsulated power source.
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Proposed Architecture
Power Management & RF Transmission Unit
Power
+ + -
Measurement Units
Power Unit
Lecture 20: On-Wafer Sensors
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Top Wafer
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Filter Si
PD
Excitation =525nm
1600 1700 1800 1900
Theoretical Curve
2000 2100 2200
-16 1500
Packaging Substrate
PR Thickness (nm)
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Mask
Mask image
NA Partial coherence Illumination aberrations Defocus magnification
Image system
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Substr ate
1 2 3 1 2 3
p-Si
How can a m detector How can a m detector retrieve nanometerretrieve nanometerscale resolution of the scale resolution of the aerial image? aerial image?
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Narrow CD
Patterns Overlap
Pattern rotates 4o
Pattern rotates 8o
Wide CD
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Detect pattern
2 4.4
60000
120000 110000
100000
90000
55000
80000
70000
60000
-20
20
40
60
80
100
120
140
160
intensity
45000
40000
x(pixel)
Mask layout
Lecture 20: On-Wafer Sensors
Measurement result
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mask
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Etch
Spin Develop
Photoresist Removal
HMDS
PD Bake
ADI ADI
Lecture 20: On-Wafer Sensors
AEI AEI
ELM ELM
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Etch
Photoresist Removal
OCD OCD
OCD OCD
OCD OCD
ELM ELM
Lecture 20: On-Wafer Sensors
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Etch
PA Bake
Etch Thin Film Thin Film FB/FF Control FB/FF Control Develop
Spin PD Bake HMDS
Photoresist Removal
ELM ELM
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