2N3819

2N3819
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92

1. Drain 2. Gate 3. Source

Epitaxial Silicon Transistor

Absolute Maximum Ratings* TC=25C unless otherwise noted
Symbol VDG VGS ID IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range Ratings 25 -25 50 10 -55 ~ 150 Units V V mA mA C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC=25C unless otherwise noted

Symbol Off Characteristics V(BR)GSS IGSS VGS(off) VGS IDSS gfs goss yfs Ciss Crss Parameter Test Condition IG = 1.0A, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2.0nA VDS = 15V, ID = 200A VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz 1600 8.0 4.0 -0.5 2.0 2000 Min. 25 2.0 8.0 -7.5 20 6500 50 Typ. Max. Units V nA V V mA mhos mhos mhos pF pF Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage Zero-Gate Voltage Drain Current Forward Transfer Conductance Output Conductance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance

On Characteristics Small Signal Characteristics

Thermal Characteristics TA=25C unless otherwise noted

Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.5 1.6 0.06

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

2N3819

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A1, December 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1