Preliminary Preliminary

Product Description

SNA-586
DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier
Not Recommended for New Designs See Application Note AN-018 for Alternates

Sirenza Microdevices SNA-586 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-500), its small size (0.38mm x 0.38mm) and gold metallization make it an ideal choice for use in hybrid circuits.
Gain & Return Loss vs. Frequency
24 20 16 Gain (dB) 12 8 4 0 0 1 2 3 4 Frequency (GHz) 5 6 7
Gain Input Return Loss Output Return Loss

(ID=65mA, TLEAD=+25C)

0 -5 -10 -15 -20 -25 -30 Return Loss (dB)

Product Features Patented GaAs HBT Technology Cascadable 50 Ohm Gain Block 32.5 dBm Output IP3 @ 850 MHz Operates From Single Supply Low Cost Surface Mount Plastic Package Applications Cellular, PCS, CDPD, Wireless Data, SONET
Units
dBm dBm dBm dBm dBm dBm dB dB dB M Hz

Sy mbol
P1dB

Parameter
Output Pow er at 1dB Compression

Frequency
850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz

Min.
16.4

Ty p.
17.6 18.4 18.4 32.5 31.6 31.6 19.6 18.1 17.4 5000 1.4:1 1.4:1 22.3 21.6 21.3 4.0

Max.

OIP3

Output Third Order Intercept Point

28.6 17.6 16.3

S21 Bandw idth VSWRIN VSWROUT S12 NF VD ID RTH, j-l

Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead)

21.6 19.9

DC-5000 M Hz DC-5000 M Hz 850 M Hz 1950 M Hz 2400 M Hz 1950 M Hz

dB dB dB dB V mA
o

4.4 58

4.9 65 254

5.4 72

C/W

Test Conditions:

VS = 8 V RBIAS = 47 Ohms

ID = 65 mA Typ. TL = 25C

OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

1

http://www.sirenza.com
EDS-101397 Rev C

Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol Parameter U nit 100 500 850 1950 2400 3500

G OIP3 P 1dB IRL ORL S 12 NF

Small Si gnal Gai n Output Thi rd Order Intercept Poi nt Output Power at 1dB C ompressi on Input Return Loss Output Return Loss Reverse Isolati on Noi se Fi gure

dB dB m dB m dB dB dB dB

20.0

19.8 31.8 17.4

19.6 32.5 17.6 15.6 19.4 22.3 4.0

18.1 31.6 18.4 16.6 21.6 21.6 4.0

17.4 31.6 18.4 16.8 20.9 21.3

15.8

12.9 16.4 22.7

14.1 17.2 22.5 3.9

21.9 14.7 20.4

V = 8v Test Conditions: S RBIAS = 47 Ohms

ID = 65mA Typ. TL = 25C

OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms

Absolute Maximum R atings

Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l

Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) Max. Storage Temp.

Absolute Limit 110 mA 7V +16 dBm +175C -40C to +85C +150C

NOTE: While the SNA-586 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85C ambient temperature.
Junction Temperature vs. Dissipated Power
200 Junction Temperature (C) 190 180 170 160 85C lead temp 150 140 0.25 0.3 0.35 Dissipated Power (W) 0.4 0.45

MTTF vs. Dissipated Power

1.E+08

TJmax
MTTF (hrs)

1.E+07 85C lead temp 1.E+06

1.E+05

1.E+04 0.25 0.3 0.35 Dissapated Power (W) 0.4 0.45

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

2

http://www.sirenza.com
EDS-101397 Rev C

Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier Typical RF Performance (VDS = 5.0V, IDS = 65mA, TLEAD=25 C)
Gain & Isolation vs. Frequency
24 Gain Isolation 0 0 -5 Return Loss (dB) -6 Isolation (dB) -10 -15 -20 -25 0 0 1 2 3 4 5 6 7 Frequency (GHz) -24 -30 0 1 2 3 4 5 6 7 Frequency (GHz) Input Return Loss Output Return Loss

Return Loss vs. Frequency

18 Gain (dB)

12

-12

GHz

-18

Output IP3 vs. Frequency

39 36 33 30 27 24 21 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0 3.5 21 18 15 12 9 6 3 0.5 1.0

P1dB vs. Frequency

P1dB (dBm)

OIP3 (dBm)

1.5

2.0 Frequency (GHz)

2.5

3.0

3.5

Noise Figure vs. Frequency

6.0 5.5 5.0 NF (dB) 4.5 4.0 3.5 3.0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 Frequency (GHz)

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

3

http://www.sirenza.com
EDS-101397 Rev C

Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier

Application Circuit Element Values

Typical Application Circuit

RBIAS
1 uF 1000 pF

Reference Designator

Frequency (Mhz) 500 850 1950 2400 3500

CB

220 pF 100 pF 68 nH

100 pF 68 pF 33 nH

68 pF 22 pF 22 nH

56 pF 22 pF 18 nH

39 pF 15 pF 15 nH

CD LC

CD LC

RF in CB

4
SNA-586

3 CB

Recommended Bias Resistor Values for ID=65mA RBIAS=( VS-VD ) / ID

RF out

Supply Voltage(VS) RBIAS

8V 47

9V 62

12 V 110

15 V 150

Note: RBIAS provides DC bias stability over temperature.

VS
RBIAS

1 uF 1000 pF Mounting Instructions

1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.

LC
S5

CD CB

CB

2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.

Pin #

Function RF IN

Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance.

Part Identification Marking The part will be marked with an S5 designator on the top surface of the package. 3

2, 4

GND

S5
1

RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.

Appropriate precautions in handling, packaging and testing devices must be observed.

Caution: ESD sensitive

Part Number Ordering Information

Part Number SNA-586 Reel Size 7" Devices/Reel 1000

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

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http://www.sirenza.com
EDS-101397 Rev C

Preliminary Preliminary SNA-586 DC-5GHz Cascadable MMIC Amplifier

Dimensions in inches [millimeters]

PCB Pad Layout

Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances.

Nominal Package Dimensions

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

5

http://www.sirenza.com
EDS-101397 Rev C