TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors

Designed for generalpurpose switching and amplifier applications.

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DC Current Gain

hFE = 20 70 @ IC = 4.0 Adc CollectorEmitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating Area These are PbFree Devices*

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCB VEB IC IB PD TJ, Tstg Value 60 70 100 7.0 15 7.0 90 0.72 65 to + 150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C TO247 CASE 340L STYLE 3 SOT93 (TO218) CASE 340D STYLE 1

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Symbol RqJC RqJA Max 1.39 35.7 Unit C/W C/W

NOTE: Effective June 2012 this device will be available only in the TO247 package. Reference FPCN# 16827.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2012

May, 2012 Rev. 7

Publication Order Number: TIP3055/D

TIP3055 (NPN), TIP2955 (PNP)

MARKING DIAGRAMS
TO247

TO218

TIPxx55 AYWWG

AYWWG TIPxx55 3 EMITTER 1 BASE 3 EMITTER

1 BASE

2 COLLECTOR TIPxx55 A Y WW G = = = = = Device Code Assembly Location Year Work Week PbFree Package

2 COLLECTOR

ORDERING INFORMATION
Device TIP3055G TIP2955G TIP3055G TIP2955G Package SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) TO247 (PbFree) TO247 (PbFree) Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail

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NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

DYNAMIC CHARACTERISTICS

SECOND BREAKDOWN

ON CHARACTERISTICS (Note 1)

OFF CHARACTERISTICS

SmallSignal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

Current Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)

BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc)

DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms)

CollectorEmitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0)

Characteristic

TIP3055 (NPN), TIP2955 (PNP)

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VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICER ICEV hFE Is/b hfe fT Min 2.5 3.0 20 5.0 15 60 Max 1.8 1.1 3.0 5.0 5.0 0.7 1.0 70 mAdc mAdc mAdc mAdc MHz Unit kHz Adc Vdc Vdc Vdc

TIP3055 (NPN), TIP2955 (PNP)

1000

hFE , DC CURRENT GAIN

VCE = 4.0 V TJ = 25C 100

TIP3055 TIP2955

10 0.1

0.2

0.5 0.7 1.0 0.3 2.0 3.0 IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

Figure 1. DC Current Gain

100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 dc 10 ms SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C TJ = 150C 40 60 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 ms

300 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.

Figure 2. Maximum Rated Forward Bias Safe Operating Area

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TIP3055 (NPN), TIP2955 (PNP)

PACKAGE DIMENSIONS
SOT93 (TO218) CASE 340D02 ISSUE E

C B Q E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069

U S K L
1 2

A
3

D V G

J H

DIM A B C D E G H J K L Q S U V

STYLE 1: PIN 1. 2. 3. 4.

TO247 CASE 340L02 ISSUE F

T B U L
4

C E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q U W STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123

N A
1 2 3

Q 0.63 (0.025) P Y
M

T B

F 2 PL

W D 3 PL 0.25 (0.010)
M

Y Q

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TIP3055 (NPN), TIP2955 (PNP)

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TIP3055/D