Professional Documents
Culture Documents
1. Product prole
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology
1.3 Applications
s Logic level translator s High-speed line driver
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
D
Simplied outline
Symbol
SOT23
mbb076
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
3. Ordering information
Table 2: Ordering information Package Name 2N7002F TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage peak gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s tp 50 s; pulsed; duty cycle = 25 % Tsp = 25 C; VGS = 10 V; see Figure 2 and 3 Tsp = 100 C; VGS = 10 V; see Figure 2 Tsp = 25 C; pulsed; tp 10 s; see Figure 3 Tsp = 25 C; see Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min 65 65 Max 60 60 30 40 475 300 1.9 0.83 +150 +150 475 1.9 Unit V V V V mA mA A W C C mA A
Source-drain diode
2N7002F_3
2 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
03aa17
03aa25
40
40
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
2N7002F_3
3 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
5. Thermal characteristics
Table 4: Rth(j-sp) Rth(j-a)
[1]
Symbol Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient
Min -
Typ -
003aab358
10
1 10-5
10-4
10-3
10-2
10-1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002F_3
4 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specied. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 A; VGS = 0 V Tj = 25 C Tj = 55 C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = 55 C IDSS drain leakage current VDS = 48 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 15 V; VDS = 0 V VGS = 10 V; ID = 500 mA; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss ton toff VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time source-drain voltage reverse recovery time recovered charge VDS = 50 V; RL = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 VGS = 0 V; VDS = 10 V; f = 1 MHz; see Figure 14 ID = 300 mA; VDS = 30 V; VGS = 10 V; see Figure 11 and 12 0.69 0.1 0.27 31 6.8 3.5 2.5 11 0.85 30 30 50 30 10 10 15 1.5 nC nC nC pF pF pF ns ns V ns nC 0.78 1.45 1.2 2 3.7 4 0.01 10 1 10 100 A A nA 1 0.6 2 2.5 2.75 V V V 60 55 V V Conditions Min Typ Max Unit
Source-drain diode IS = 300 mA; VGS = 0 V; see Figure 13 IS = 300 mA; dIS/dt = 100 A/s; VGS = 0 V
2N7002F_3
5 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
1 ID (A) 0.8
03ai13
10
03ai15
4.5
4000
0.6 4 0.4
0.2
1000
10
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
1 ID (A) 0.8
03ai16
0 0 2 4 VGS (V) 6
0 -60
60
120
Tj (C)
180
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values
2N7002F_3
6 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
003aab101
003aab100
typ
min
typ
max
min
10-5
0 -60
Tj = 25 C; VDS = 5 V
VDS ID VGS(pl)
4
VGS(th)
QGS
2N7002F_3
7 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
1 IS (A) 0.8
03ai17
102
03ai18
C (pF)
Ciss
Tj = 25 C 1 10-1
0.4
0.6
0.8
VSD (V)
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
2N7002F_3
8 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
7. Package outline
Plastic surface-mounted package; 3 leads SOT23
HE
v M A
Q A A1
1
e1 e bp
2
w M B detail X Lp
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
EUROPEAN PROJECTION
9 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
8. Revision history
Table 6: Revision history Release date 20060428 Data sheet status Product data sheet Change notice Doc. number Supersedes 2N7002F_2 Document ID 2N7002F_3 Modications:
Table 5 Characteristics: VGS(th) ID condition modied Table 5 Characteristics: VGS(th) maximum limits modied Table 5 Characteristics: RDSon typical values modied Table 5 Characteristics: gfs removed Table 5 Characteristics: Addition of QG(tot), QGS and QGD Table 5 Characteristics: Ciss, Coss and Crss values modied Table 5 Characteristics: ton and toff typical values modied Figure 3, 4, 5, 6, 7, 9, 10, 13 and 14: modied Figure 11: added Product data sheet Product data 9397 750 14945 9397 750 09096 2N7002F-01 -
2N7002F_2 2N7002F-01
20050509 20020211
2N7002F_3
10 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
III
Product data
Production
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Denitions
Short-form specication The data in a short-form specication is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values denition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specied use without further testing or modication.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specied.
12. Trademarks
Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
2N7002F_3
11 of 12
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product prole . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Denitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11