MMBD1701/A / 1703/A / 1704/A / 1705/A

MMBD1701/A / 1703/A / 1704/A / 1705/A

3 3 1 2 1
MMBD1701 MMBD1703 MMBD1704 MMBD1705 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A

Connection Diagrams
1701 3 3 1703

85
2

1 1704 3

2NC

2 3 1705

SOT-23

Small Signal Diodes

Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Storage Temperature Range Operating Junction Temperature

Value
30 50 250 -55 to +150 150

Units
V mA mA C C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA = 25C unless otherwise noted

Parameter

Value
350 357

Units
mW C/W

Electrical Characteristics
Symbol
VR VF

Parameter
Breakdown Voltage Forward Voltage

Test Conditions
IR = 5.0 A IF = 10 A IF = 100 A IF = 1.0 m A IF = 10 mA IF = 20 mA IF = 50 mA V R = 20 V V R = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 m A, R L = 100 IF = IR = 10 mA, IRR = 1.0 m A, R L = 100

Min
30 420 520 640 760 810 0.89

Max
500 610 740 880 950 1.1 50 1.0 0.7 1.0

Units
V mV mV mV mV mV V nA pF ns ns

IR CT trr

Reverse Current Total Capacitance Reverse Recovery Time MMBD1701-1705 MMBD1701A-1705A

2001 Fairchild Semiconductor Corporation

MMBD1700 series, Rev. B1

MMBD1701/A / 1703/A / 1704/A / 1705/A

Small Signal Diode

(continued)

Typical Characteristics

60

Ta= 25 C

10

Ta= 25 C

50

Reverse Current. I R [nA]

Reverse Voltage, VR [V]

40

0 1 2 3

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA

Reverse Current,IR [uA]

10

20

30

50

100

Reverse Voltage, V R [V]

10

20

Figure 2. Reverse Current vs Reverse Voltage IR - 1 to 22V

600

Ta= 25 C

850

Ta= 25 C

Forward Voltage, V F [mV]

550

500

Forward Voltage, V F [mV]

1 2 3 5 10 20 30 50 100

800

750

450

700

400

650

350

600

300

550

Forward Current, IF [uA]

0.1

0.2

0.3

Forward Current, IF [mA]

0.5

10

Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA

Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA

1.6

1.0

Ta= 25 C

Ta= 25 C

To tal C apacitance [pF ]

Forward Voltage, VF [V]

0.9

1.4

0.8

1.2

0.7

1.0

0.6

0.8

0.5 10 20 30 50 100 200 0 2 4 6 8 10 12 14

Forward Current, I F [m A]

R e v e rse V o lta g e [V ]

Figure 5. Forward Voltage vs Forward Current VF - 10 - 200 mA

Figure 6. Total Capacitance vs Reverse Current

MMBD1700 series, Rev. B1

MMBD1701/A / 1703/A / 1704/A / 1705/A

Small Signal Diode

(continued)

Typical Characteristics

(continued)

150

350

300

Power Dissipation, P D [mW]

Current [mA]

100

250

SOT-23

200

DO-7
150

50

IO - A v e ra

ge R e c tifi e

d Cu rr

100

ent mA

50

0 0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175 200

Am bient Tem perature, T A [ C]

Average Temperature, Io

Figure 7. Average Rectified Current (IO) versus Ambient Temperature (TA)

Figure 8. Power Derating Curve

MMBD1700 series, Rev. B1

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Rev. H4