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A.2 DC Parameters
Unit V
Note nI-1
K1
k1
0.5
V1/2
nI-2
A-1
DC Parameters
Symbols used in equation K2 K3 K3b W0 Nlx Vbm Dvt0 Dvt1 Dvt2 Dvt0w
Symbols used in SPICE k2 k3 k3b w0 nlx vbm dvt0 dvt1 dvt2 dvt0w
Description Second order body effect coefficient Narrow width coefficient Body effect coefficient of k3 Narrow width parameter Lateral non-uniform doping parameter Maximum applied body bias in Vth calculation first coefficient of short-channel effect on Vth Second coefficient of shortchannel effect on Vth Body-bias coefficient of shortchannel effect on Vth First coefficient of narrow width effect on Vth for small channel length Second coefficient of narrow width effect on Vth for small channel length Body-bias coefficient of narrow width effect for small channel length Mobility at Temp = Tnom NMOSFET PMOSFET
Default 0.0 80.0 0.0 2.5e-6 1.74e-7 -5.0 2.2 0.53 -0.032 0
Note nI-2
Dvt1w
dvtw1
5.3e6
1/m
Dvt2w
dvt2w
-0.032
1/V
u0
670.0 250.0
cm2/V/ sec
A-2
DC Parameters
Description First-order mobility degradation coefficient Second-order mobility degradation coefficient Body-effect of mobility degradation coefficient
Default 2.25E-9 5.87E-19 mobmod =1, 2: -4.65e-11 mobmod =3: -0.046 8.0E4 1.0 0.0 0.0 0.0 -0.047 0.0 1.0 0.0 0 0
Note
1/V m/sec none 1/V m m 1/V 1/V none r -mW V-1/2 1/V
Saturation velocity at Temp = Tnom Bulk charge effect coefficient for channel length gate bias coefficient of Abulk Bulk charge effect coefficient for channel width Bulk charge effect width offset Body-bias coefficient of bulk charge effect First non-saturation effect parameter Second non-saturation factor Parasitic resistance per unit width Body effect coefficient of Rdsw Gate bias effect coefficient of Rdsw
A-3
DC Parameters
Symbols used in equation Wr Wint Lint dWg dWb Voff Nfactor Eta0 Etab Dsub Cit Cdsc Cdscb Cdscd Pclm
Symbols used in SPICE wr wint lint dwg dwb voff nfactor eta0 etab dsub cit cdsc cdscb cdscd pclm
Description Width Offset from Weff for Rds calculation Width offset fitting parameter from I-V without bias Length offset fitting parameter from I-V without bias Coefficient of Weffs gate dependence Coefficient of Weffs substrate body bias dependence Offset voltage in the subthreshold region at large W and L Subthreshold swing factor DIBL coefficient in subthreshold region Body-bias coefficient for the subthreshold DIBL effect DIBL coefficient exponent in subthreshold region Interface trap capacitance Drain/Source to channel coupling capacitance Body-bias sensitivity of Cdsc Drain-bias sensitivity of Cdsc Channel length modulation parameter
Default 1.0 0.0 0.0 0.0 0.0 -0.08 1.0 0.08 -0.07 drout 0.0 2.4E-4 0.0 0.0 1.3
Unit none m m m/V m/V 1/2 V none none 1/V none F/m2 F/m2 F/Vm2 F/Vm2 none
Note
A-4
DC Parameters
Description First output resistance DIBL effect correction parameter Second output resistance DIBL effect correction parameter Body effect coefficient of DIBL correction parameters L dependence coefficient of the DIBL correction parameter in Rout First substrate current bodyeffect parameter Second substrate current bodyeffect parameter Gate dependence of Early voltage Effective Vds parameter poly gate doping concentration The first parameter of impact ionization current The second parameter of impact ionization current Source drain sheet resistance in ohm per square Source drain junction saturation current per unit area
Note
A-5
Description Charge partitioning rate flag Non LDD region source-gate overlap capacitance per channel length Non LDD region drain-gate overlap capacitance per channel length Gate bulk overlap capacitance per unit channel length Bottom junction per unit area Bottom junction capacitance grating coefficient Source/Drain side junction capacitance grading coefficient Source/Drain side junction capacitance per unit area Bottom built-in potential Source/Drain side junction built-in potential Light doped source-gate region overlap capacitance Light doped drain-gate region overlap capacitance Default 0 calculated Unit none F/m Note nC-1
CGD0
cgdo
calculated
F/m
nC-2
CGB0 Cj Mj Mjsw
cgbo cj mj mjsw
F/m F/m2
none
A-6
NQS Parameters
Description Default Coefficient for lightly doped region overlap capacitance Fringing field capacitance fringing field capacitance Constant term for the short channel model Exponential term for the short channel model Length offset fitting parameter from C-V Width offset fitting parameter from C-V 0.6 Unit F/m Note
F/m m none m m
nC-3
Default 5
Unit none
Note
A-7
dW and dL Parameters
Description Coefficient of length dependence for width offset Power of length dependence of width offset Coefficient of width dependence for width offset Power of width dependence of width offset Coefficient of length and width cross term for width offset Coefficient of length dependence for length offset Power of length dependence for length offset Coefficient of width dependence for length offset Power of width dependence for length offset Coefficient of length and width cross term for length offset
Default 0.0 1.0 0.0 1.0 0.0 0.0 1.0 0.0 1.0 0.0
Unit mWln none mWwn none mWwn+Wln mLln none mLwn none mLwn+Lln
Note
A-8
Temperature Parameters
Description Temperature at which parameters are extracted Mobility temperature exponent Temperature coefficient for threshold voltage Channel length dependence of the temperature coefficient for threshold voltage Body-bias coefficient of Vth temperature effect Temperature coefficient for Ua Temperature coefficient for Ub Temperature coefficient for Uc
Default 27
Unit oC
Note
te Kt1 Kt1l
none V V*m
1/V
A-9
Description Temperature coefficient for saturation velocity Temperature coefficient for Rdsw
Default 3.3E4 0
Unit m/sec -m
Note
Default (NMOS) 1e20 (PMOS) 9.9e18 (NMOS) 5e4 (PMOS) 2.4e3 (NMOS) -1.4e12 (PMOS) 1.4e-12 4.1e7 1 1 0
Note
Em Af Ef Kf
em af ef kf
Saturation field Frequency exponent Flicker exponent for noimod=2 Flicker noise parameter for noimod=1
A-10
Process Parameters
Description Gate oxide thickness Junction Depth Body-effect coefficient near the surface Body-effect coefficient in the bulk Channel doping concentration Substrate doping concentration Vbs at which the depletion region width equals xt Doping depth
Note
nI-6
Unit m m
Note
A-11
Description Minimum channel width Maximum channel width Bin unit scale selector
Unit
Note
m m none
Vtho = VFB + s + K1 s
VFB = Vtho s K 1 s
K1 = gamma2 2 K 2 s Vbm
K2 =
A-12
Nch s = 2vt ln ni
vt =
kBT q
T ni = 145x1010 . 300.15
1.5
E g (T ) exp 215565981 . 2 vt
E g (T ) = 116 .
nI-3. If nch is not given and gamma1 is given, nch is calculated from:
Nch =
If both gamma1 and nch are not given, nch defaults to 1.7e23 1/m3 and gamma1 is calculated from nch. nI-4. If gamma1 is not given, it is calculated using:
A-13
gamma1 =
2 q si Nch Cox
gamma 2 =
2 q si N sub Cox
Vbx = s
qNchX t 2 2 si
nC-1. If cgso is not given then it is calculated using: if (dlc is given and is greater 0) then, cgso = p1 = (dlc*cox) - cgs1 if (the previously calculated cgso <0), then cgso=0 else cgso = 0.6 xj*cox
A-14
nC-2. If cgdo is not given then it is calculated using: if (dlc is given and is greater than 0) then, cgdo = p2 = (dlc*cox) - cgd1 if (the previously calculated cgdo <0), then cgdo=0 else cgdo = 0.6 xj*cox
CF =
2 ox 4 10 7 ln 1 + Tox
A-15
A-16