ELEG-446X Fall 2005 MEMS: Project #2

1. A bulk-micromachined capacitive MEMS accelerometer device is shown in Figure 1. The beam is located in the middle level of the mass. The accelerometer is sensitive to the acceleration along Y direction. The design parameters are given as below. (Beam width Wb)=(mass width Wm)=3000um, Beam length Lb=3000m, beam thickness tb=16m, Mass length Lm=2000m, mass thickness tm=330m. Since the X-Y cross-section of the device is uniform along Z direction, we can utilize the device symmetry to develop a 2D (X-Y) model for the device. The X-Y cross sectional view of the device is shown in Figure 2. (1). Use a coordinate system at your convenience and try to decide the coordinates of all the key points in your 2D model. Build the 2D device model in ANSYS. Use ANSYS simulation to decide the displacement sensitivity (deflection of the cantilever in its tip along Y direction due to unit gravity acceleration 1g) of the accelerometer to the acceleration input along X and Y directions separately. That is, find out Sdx=? Sdy=? (2). Use the equations we derived in the class, find out the Sdy with hand calculation. You need to use the equations for the cantilever model. Show the details of your hand calculation. Compare your result with the Sdy achieved with ANSYS in step (1), find out the relative error of hand calculation: S (hand _ calculation) S dy ( ANSYS ) Error = dy 100% S dy ( ANSYS ) Since we use simplified model in the equation, ANSYS FEM simulation result should be more precise. (3). Use ANSYS to extract the first five resonant frequencies of the device. Capture the screen shots of the five vibration modes and their corresponding resonant frequencies. Identify which mode is the working mode for the accelerometer. (4). Assume another design with the beam located in the top level of the wafer, as shown in Figure 3. All the other design parameters remain the same as before. Try to develop the 2D device model with ANSYS. Use ANSYS to find out the displacement sensitivity of the accelerometer to the acceleration input along X and Y directions separately. Compare your Sdx and Sdy of this design with the values you obtained in step (1). What conclusions can you achieve? (5). Use the device model in step (1) (the beam is located in the middle level of the wafer), however, try to adjust the beam thickness tb to be 6m, 10m, 30m. Use ANSYS to derive the displacement sensitivity Sdy for each case. You also have the Sdy value for tb=16m. Draw the curve of Sdy v.s. tb with the data you achieved. What conclusion can you derive? (6). Still use the device model in question (1), try to increase the mass length Lm to be 3000m, 4000m, 6000m (all the other parameters remain unchanged). Use ANSYS to simulate the displacement sensitivity Sdy for each case. Draw the curve of Sdy v.s. Lm with the data you obtained (including the original Sdy for Lm=2000um). What conclusion can you achieve?

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Wm

mass beam tb Lb Lm Y X

tm

Figure 1. Bulk-micromachined capacitive MEMS accelerometer

Figure 2. Cross-sectional view of the beam-mass structure of the accelerometer

Figure 3. Accelerometer design with beam located at the top level of the wafer Due on Oct 20, 2005, Thursday in class.

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