IA - Safety Issues For MicroFabrication

UkM Dr, Nowshud Amin
Semiconductor
Manufacturing Technology
Safety Issues
Semiconductor
Safety Issues
Definitions of Safety Terms
Hazardous: Any chemical or substance that has adverse
effects on the health or safety of people.
Toxic: Any chemical or substance that seriously
damages biological tissue. Examples are
phosphine and arsine.
Flammable: Any liquid or gas that is capable of igniting
into fire.
Pyrophoric: Any material that ignites spontaneously in air
below 55C (130F). An example is silane.
Examples of Hazards in
Semiconductor Manufacturing
Process chemicals
Highly flammable gases
Pyrophoric gases
Corrosive gases
Toxic or caustic liquids
High voltages
Solvents
Mechanical hazards
High temperatures
Radiation
UV
Laser
X-ray
Freezing temperatures
Hazard Warning Sign
Figure A.1
33
33
22
Red
White
Yellow
Blue
Health Hazard
0 Normal, no hazard
1 Slight hazard
2 Hazardous
3 Extremely hazardous
4 Deadly
Fire Hazard
0 Nonflammable
1 Above 200F
2 Below 200F
3 Below 100F
4 Below 73F
Reactivity
0 Stable, nonreactive
1 Unstable if heated
2 Violently reactive
3 May detonate with
heat or shock
4 May detonate
Specific Hazard
OXY Oxidizer
ACI Acid
ALK Alkali
COR Corrosive
W Use no water
Radiation hazard
Definitions of Exposure Limits
(Refer to p. 602 for details)
TLV-TWA: Threshold limit values time
weighted average.
TLV-STEL: Threshold limit values short
term exposure limit.
IDLH: Immediately dangerous to life and
health.
PEL: Permissible exposure limit.
How Chemicals Enter the Body
1. Contact with skin or eyes.
Wear safety glasses and no contact lens.
Use goggles to protect normal eyewear.
Wear the appropriate glove type for the job.
Chemicals absorbed through the pores of the
skin can enter the body and cause damage to
vital organs.
Use full face shield when pouring or mixing
chemicals.
2. Ingestion (swallowing).
Certain toxic chemicals can be fatal when
even a minute amount in ingested.
Never bring food or drink into areas where
chemicals are being used. It is good practice
to wash hands with soap and water when
leaving the workplace.
3. Inhalation.
Breathing toxic gases may result in burns or
damage to lung tissue and can pass into the
bloodstream, damaging other organs.
The workplace must be well-ventilated. If
unusual odors are detected, notify someone in
charge and leave the area. Sound an alarm if
appropriate.
Common Information in MSDS
Chemical name
Date prepared
PEL & TLV
Health effects
Physical/Chemical
characteristics
Fire/Explosion data
Reactivity hazard data
Health hazard dta
Common Terms Used in an MSDS
Terminology Definition Precautionary Action
Avoid Contact
General rule for all chemicals, even if
they are considered nonhazardous.
Do not breathe vapors and avoid contact
with skin, eyes and clothing for all
chemicals.
Carcinogen
Substances that are suspected or known to
cause cancer. Some may have threshold
limits of exposure. Multiple exposure to
suspected carcinogenic materials for even
a low dose may be worse than a single
massive exposure.
Exercise extreme care when handling. Do
not breathe vapors and avoid all contact
with skin, eyes and clothing by wearing
suitable protective equipment.
Corrosive
Living tissue as well as equipment is
destroyed on contact with these
chemicals.
with skin, eyes and clothing. Use suitable
protective equipment.
Skin
A notation on the MSDS for substances
that can be absorbed sufficiently through
the skin as to cause toxic effects.
Do not allow contact with skin, eyes, or
clothing.
Danger
Substances that can have serious harmful
effects.
Considered dangerous chemicals. There
are serious hazards associated with these
chemicals.
Explosive
Substances known to explode under some
conditions.
Avoid shock (dropping), friction, sparks
and heat. Isolate from other chemicals
that are hazardous when spilled.
Flammable or
Combustible
Substances that give off vapors that can
readily ignite under usual working
conditions.
Keep chemicals away from heat, sparks,
flames and other sources of ignition.
Table A.1
Common Terms Used in an MSDS
Terminology Definition Precautionary Action
Irritant
Substances that have an irritant effect on
skin, eyes, etc.
with skin and eyes.
Lachrymator
Substances that have an irritant or
burning effect on skin, eyes or respiratory
tract. These are dangerous in very small
quantities.
Only open in a hood. Do not breathe
vapors. Avoid contact with skin and eyes.
Avoid heating.
Mutagen
Chemical or physical agents that cause
genetic alterations.
Handle with extreme care. Do not breathe
vapors and avoid contact with skin, eyes
and clothing.
Peroxide Former
Substances that form peroxides or
hydroperoxides upon standing or when in
contact in air.
Many peroxides are explosive.
Poison
Substances that have very serious and
often irreversible effects on the body.
These substances are hazardous when
breathed, swallowed, or in contact with
the skin.
Avoid all contact with the body and use
suitable protective equipment.
Stench Substances that have or generate odors. Open only in a hood.
Teratogen
Substances that cause the production of
physical defects in a developing fetus or
embryo.
Handle with extreme care. Do not breathe
vapors and avoid contact with skin, eyes
and clothing. Use protective clothing.
Toxic
Substances that are hazardous to health
when breathed, swallowed, or are in
contact with the skin. There is danger of
serious damage to health by short or
prolonged exposure.
Avoid all contact with the body. Do not
breath vapors, dust or mist. Use suitable
protective equipment.
Table A.1 (continued)
Wet Chemical Safety
When working with corrosives:
Clearly identify all chemicals before use (e.g., HF
looks like H
2
O). Do not mix incompatible chemicals
(see Table A1.3).
Wear eye protection and a face shield at all times.
Wear body and arm protection, including acid-
resistant apron and sleeve guards.
Wear gloves and boots suitable for the type of
chemical.
Do not breathe vapors. Use only under a fume hood.
Store and use HF only in plastic containers HF
attacks glass.
Incompatible Chemicals
Table A.2
Chemical DO NOT MIX WITH:
Acetone Bromine, chlorine, nitric acid and sulfuric acid
Ammonium Fluoride Acid solutions
Antimony Trioxide Metals and reducing agents
Arsine Oxidizing compounds
Boron Trichloride Moisture in air or water
Flammable Liquids Ammonium nitrate, chromic acid, hydrogen peroxide, nitric acid, sodium
peroxide and halogens
Hydrofluoric Acid Ammonia solutions
Hydrogen Peroxide Copper, chromium, iron, most metals or their salts, alcohols, acetone,
organic materials, aniline, nitromethane, flammable liquids and
combustible materials
Nitric Acid Acetic acid, aniline, chromic acid, hydrocyanic acid, hydrogen sulfide,
flammable liquids and flammable gases
Oxygen Flammable gases, liquids or solids such as acetone, acetylene, grease,
hydrogen oils and phosphorus
Sulfuric Acid Potassium chlorate, potassium perchlorate, potassium permanganate, and
compounds with light metals such as sodium and lithium
Precautions When Working With Solvents
Wear eye protection (face masks), appropriate
gloves and protective clothing.
Avoid breathing vapors. Use only under a hood or
in a well-ventilated area.
Keep solvents away from heat, sparks and open
flame. Know the fire extinguisher location.
Do not pour solvents into acid sinks or drains.
Pour solvents into waste solvent containers.
Keep solvents in a flammable materials storage
cabinet.
Do not mix acid waste with solvent waste - could
produce dangerous exothermic reaction.
Special Precautions with Chemicals
(Refer to p. 606 for details)
Hydrofluoric Acid (HF)
Sulfuric Acid (H
2
SO
4
)
Chemical Hazards
Gas Detection and Monitoring
Some recommended safety procedures:
Conduct formal safety reviews and
inspections
Implement regular gas safety training
programs
Limit the number of cylinders stored on-site
through just in time deliver
Gas Detection and Monitoring
(continued)
Important gas system design features:
Select components and materials suitable for reactive gases
Double containment for gas lines, where appropriate
Good ventilation around piping
Leak testing prior to use
Appropriate use of check valves and flow limiting orifices
Automatic shutoff valves
Pressure and vacuum-cycle purge on process stations
Backup power for fire protection and exhaust systems
Gas detection and alarm system appropriately placed, as
defined in the Uniform Fire Code and local ordinances
Steel gas cabinets with locks and external emergency
shutoff valves
Commonly Used Fab Chemicals and
Their Safety Hazards
Note: Process applications are listed here only for reference
and are described in the appropriate chapters.
Table A.3
A: annealing E/C: etch/clean
CVD: chemical vapor deposition I: ion implant
CG: crystal growth P/B: purge/blanket
Di: diffusion S: sputtering
Do: doping TO: thermal oxidation
TLV-TWA: Threshold limit values time weighted average. Nearly all workers
could be repeatedly exposed, day after day, without an adverse affect.
TLV-STEL: Threshold limit values short term exposure limit. Exposures at the
STEL should not be longer than 15 minutes, and should not be repeated more
than 4 times per day.
IDLH: Immediately dangerous to life and health.
Chemical
Name
Symbol
Combustible
or Explosive
Health
hazard
class
TLV
TWA
(ppm)
TLV -
STEL
(ppm)
IDLH
(ppm)
Process Applications
(see note below)
Ammonia NH
3
X 2 25 35 500 CVD
Argon Ar 0 - - - A.,CVD,CG,Di,E/C,I,P/B,S,TO
Arsine AsH
3
X 4 0.05 - 6 CVD, CG, Di, Do, I
Boron trichloride BCl
3
3 1 - 100 Di, Do, E/C, I
Boron trifluoride BF
3
3 1 - 100 Di, Do, I
Chlorine Cl
2
3 0.5 1 30 E/C, TO
Carbon dioxide CO
2
1 5000 30000 50000 P/B
Diborane B
2
H
6
3 0.1 0.3 40 CVD, Di, Do
Dichlorosilane SiH
2
Cl
2
3 5 - 100 CVD
Helium He 0 - - - A, CVD, CG, E/C, I, P/B
Hydrogen H
2
X 0 - - - A,CVD,CG,Di,E/C,I,P/B,TO
Hydrogen bromide HBr 3 3 - 50 E/C
Chemical
Name
Symbol
Combustible
or Explosive
Health
hazard
class
TLV
TWA
(ppm)
TLV -
STEL
(ppm)
IDLH
(ppm)
Process Applications
(see note below)
Hydrogen chloride HCl 3 5 - 100 TO
Nitrogen N
2
0 - - - A, CVD, E/C ,I, P/B, TO
Nitrogen trifluoride NF
3
3 10 15 2000 E/C, TO
Nitrous oxide N
2
O X 2 50 - - E/C, TO
Oxygen O
2
X 0 none none None CVD, Di, E/C, S, TO
Phosphine PH
3
X 4 0.3 1 200 CVD, CG, Di, Do, I
Silane SiH
4
X 4 5 - - CVD, Di
Silicon tetrachloride SiCl
4
3 5 - 100 CVD, E/C
Sulfur hexafluoride SF
6
3 100 1250 - E/C
Tetrafluoromethane CF
4
X E/C
Tungsten
hexafluoride
WF
6
3 3 6 -
CVD
Tetraortho-
Silicate (TEOS)
(C
2
H
5
)
4
SiO
4 X 2 10 - 1000 CVD
Other Safety Hazards
(Refer to p. 608-609 for details.)
Photo Light Source Safety
Ion Implantation Safety
Chemical Recycling
Semiconductor
Appendix B
Contamination Controls
in Cleanrooms
Semiconductor
Appendix B
Contamination Controls
in Cleanrooms
Evolution of Chip Feature Sizes and
Contamination Control
Year of Mass
Production
1980 1984 1987 1990 1993 1995 1997
Wafer Diameter (mm)
75 100 125 150 200 200 200
DRAM Memory
Technology
(increasing value has
more memory)
64K 256K 1M 4M 16M 64M 256M
Chip Size (cm
2
) 0.3 0.4 0.5 0.9 1.4 2.0 3.0
Minimum Feature Size
on Chip (m)
2.0 1.5 1.0 0.8 0.5 0.35 0.25
Number of Process
Steps
100 150 200 300 400 450 500
Class of Cleanroom
(smaller value is
cleaner)
1,000-
100
100 10 1 0.1 0.1
0.1 and mini-
environment
Chemical Impurity
(ppb)
1,000 500 100 50 5 1 0.1
Table B.1
Human Contamination
Saliva and Lung Particles
talking
sneezing
Contents of Saliva
Dissolved minerals
Salts
Elements (Na, Ca, Fe, Mg, Cl, Al, S, K, P)
Other Body Contaminants
Evolution of Federal Standard 209
Specifications for Cleanliness of Air
Table B.2
Date
Federal
Standard
Highlights of Original and Revised Contents
Dec. 1963 209 Cleanroom operation principles.
Aug. 1966 209A Cleanroom design and testing methods:
Defined air cleanliness classifications as class 100, 10,000, and
100,000: specified as the number of particles at sizes larger
than 0.5 micron per cubic foot.
Defined air flow pattern of laminar flow and turbulent flow.
Specified air velocity at 90 +/- 20 ft/min.
Specified pressure, temperature, humidity and vibration.
Specified audio frequency noise & air exchange rate.
Apr. 1973 209B Changed air velocity from 90 +/- 20 ft/min to 90 +/- 20%
ft/min and changed humidity from 45% to 40 +/- 5%.
May 1977 209B (amend) Added cleanliness class 1,000.
Oct. 1987 209C Major revision of cleanroom classification and testing method:
Added air cleanliness classes 1 and 10.
Extended the particles measurements from 5 micron and 0.5
micron down to 0.3 micron and 0.2 micron for class 100, and
down to 0.3, 0.2 and 0.1 micron for class 10 and class 1.
Clearly defined particulate sampling locations and numbers of
sampling and measuring time.
June 1988 209D Corrected several typographical errors found in 209C.
Sep. 1992 209E Adapted the metric system.
Added descriptor to specify the maximum allowable number of
ultrafine particles per cubic meter.
Added sequential airborne particle sampling plan to the single
air sampling plan specified in 209D.
Metric Definitions of Airborne Particulate
Cleanliness Classes Per Federal Standard 209E
Table B.3
Particles/m
3
Class
0.1 m 0.2 m 0.3 m 0.5 m 5 m
M1 3.50 x 10
2
7.57 x 10
1
3.09 x 10
1
1.00 x 10
1
M1.5 1.24 x 10
3
2.65 x 10
2
1.06 x 10
2
3.53 x 10
1
M2 3.50 x 10
3
7.57 x 10
2
3.09 x 10
2
1.00 x 10
2
M2.5 1.24 x 10
4
2.65 x 10
3
1.06 x 10
3
3.53 x 10
2
M3 3.50 x 10
4
7.57 x 10
3
3.09 x 10
3
1.00 x 10
3
M3.5 2.65 x 10
4
1.06 x 10
4
3.53 x 10
3
M4 7.57 x 10
4
3.09 x 10
4
1.00 x 10
4
M4.5 3.53 x 10
4
2.47 x 10
2
M5 1.00 x 10
5
6.18 x 10
2
M5.5 3.53 x 10
5
2.47 x 10
3
M6 1.00 x 10
6
6.18 x 10
3
M6.5 3.53 x 10
6
2.47 x 10
4
M7 1.00 x 10
7
6.18 x 10
4
Cleanroom Glove Characteristics
Table B.4
Glove Desirable Characteristics
Undesirable
Characteristics
PVC (vinyl) cleanroom glove
Barrier to skin contaminants
Flexible; inexpensive
Low level of contaminants
Low particle levels
Excessive sweating
Tears/splits easily
Not acid or solvent
resistant
Latex cleanroom glove
Inexpensive Often irritates skin
Orange latex acid glove
Excellent acid protection
Low particle levels
Slippery
Too warm
Chemical extractables too
high (e.g., chloride)
Green nitrile solvent glove
Adequate solvent protection for
many solvents
Not resistant to all solvents
Chemical extractables too
high (e.g., sulfur)
Silver mulitlayered PVA
solvent glove for special
solvents (e.g., dimethyl
acetamide)
Excellent Solvent Protection
Low level of extractable
contaminants & particles
Lacks dexterity
Expensive
Specification for DI Water
Two primary specifications for electronic
grade DI water:
American Society for Testing and Materials
(ASTM)
ASTM D-19 Standard Guide for Electronic
Grade Wafer D512-90 (1990)
Semiconductor Equipment and Materials
International
SEMI Suggested Guidelines for Pure Water for
Semiconductor Processing (1989)
Charge Generation Capability
of Common Materials
Figure B.1
Positive (+)
Negative (-)
Air
Human skin
Glass, quartz
Aluminum
Paper
Hard rubber
Copper
Polyester (mylar)
Polystyrene (styrofoam)
PVC (vinyl)
Teflon
Silicone rubber
Electrostatic Voltages at Different
Relative Humidity Levels
Table B.5
Means of Static Generation
10% to 20%
Relative Humidity
15% to 90%
Relative Humidity
Walking across carpet 35,000 V 1,500 V
Walking over vinyl floor 12,000 V 250 V
Worker at bench 6,000 V 100 V
Work chair padded with
polyurethane foam
18,000 V 1,500 V
Semiconductor
Appendix C
Units
Semiconductor
Appendix C
Units
The International System of Units (SI)
Quantity Unit Abbreviation Units
Length meter m
Mass kilogram Kg
Time second s
Temperature kelvin K
Current ampere A
Frequency hertz Hz 1/s
Force newton N Kg-m/s
2
Pressure pascal Pa N/m
2
Energy joule J N-m
Power watt W J/s
Electric charge coulomb C A-s
Potential volt V J/C
Conductance siemens S A/V
Resistance ohm

V/A
Capacitance farad F C/V
Magnetic flux weber Wb V-s
Magnetic induction tesla T Wb/m
2
Inductance henry H Wb/A
Table C.1
SI Prefixes
Table C.2
Prefix Symbol Value
femto- f 10
-15
pico- p 10
-12
nano- n 10
-9
micro- m 10
-6
milli- m 10
-3
centi- c 10
-2
deci- d 10
-1
deka- da 10
hecto- h 10
2
kilo- k 10
3
mega- M 10
6
giga- G 10
9
tera- T 10
12
Unit Conversions
A meter is the basis for metric units of measure.
1 = 10
-10
m
1 nm = 10
-9
m
1 m = 10
-6
m
1 mm = 10
-3
m
1 cm = 10
-2
m
Metric Equivalents to the Angstrom
The angstrom is a common thickness unit of measure.
1 = 10
-1
nm
1 = 10
-4
m
1 = 10
-8
cm
1 = 10
-10
m
Conversion Between Common and SI Units
Physical Property Common Unit SI Unit
1 in. 2.54 cm
0.001 in (1 mil)
25.4 microns (m) 25 m
0.039 in (about 4 mils) 0.1 mm
Length
39.3 microinches ( inches) 1 m
2.205 pounds (lb) 1.000 kg
1.000 lb 453.6 g
Mass
1 ounce (oz) 28.35 g
1.000 gallon (gal) 3.785 liter (L) Volume
1.00 quart (qt) 0.946 L
1 eV 1.6022 x 10
-19
J Energy
1 kWh 3.600 x 10
3
kL
Table C.3
Semiconductor
Appendix D
Color as a Function of
Oxide Thickness
Semiconductor
Appendix D
Color as a Function of
Oxide Thickness
Color Chart for Thermally Grown Oxide Films
Film
Thickness
( m)
Color & Comments
Film
Thickness
( m)
Color & Comments
0.05
0.07
Tan
Brown
0.63
0.68
Violet-red
Bluish
0.10
0.12
0.15
0.17
Dark violet to red-violet
Royal blue
Light blue to metallic blue
Metallic to very light yellow-
green
0.72
0.77
Blue-green to green
Yellowish
0.20
0.22
0.25
0.27
Light gold or yellow
Gold with slight yellow-orange
Orange to melon
Red-violet
0.80
0.82
0.85
0.86
0.87
0.89
Orange
Salmon
Dull, light red-violet
Violet
Blue-violet
Blue
Table D.1
Color Chart for Thermally Grown Oxide Films
Table D.1 (continued)
Film
Thickness
( m)
Color & Comments
Film
Thickness
( m)
Color & Comments
0.30
0.31
0.32
0.34
0.35
0.36
0.37
0.39
Blue to violet-blue
Blue
Blue to blue green
Light green
Green to yellow-green
Yellow-green
Green-yellow
Yellow
0.92
0.95
0.97
0.99
Blue-green
Dull yellow-green
Yellow to yellowish
Orange
0.41
0.42
0.44
0.46
0.47
0.48
0.49
Light orange
Carnation pink
Violet-red
Red-violet
Violet
Blue-violet
Blue
1.00
1.02
1.05
1.06
1.07
Carnation pink
Violet-red
Red-violet
Violet
Blue-violet
0.50
0.52
0.54
0.56
0.57
0.58
0.6
Blue-green
Green (broad)
Yellow-green
Green-yellow
Yellow to yellowish
Light orange or yellow
Carnation pink
1.10
1.11
1.12
1.18
1.19
Green
Yellow-green
Green
Violet
Red-violet
Semiconductor
Appendix E
Overview of Photoresist
Chemistry
Semiconductor
Appendix E
Overview of Photoresist
Chemistry
Diagram and Symbol of Simple
Benzene Aromatic Ring
Figure E.1
Carbon atom
Hydrogen atom
Benzene
aromatic ring
Redrawn from S. Campbell, The Science and Engineering of Microelectronic
Fabrication (New York: Oxford University Press, 1996), p. 183.
Aromatic Compounds
Toluene Naphthalene
C H H
H
Figure E.2
Polyethylene Polymer and Cross Linking
C
H
H
C
H
H
C
H
H
C
H
H
C
H
H
C
H
H
C
H
H
Polyethylene polymer
C
H
H
C
H
H
C
H
H
C
H
C
H
H
C
H
H
C
H
H
H
C
C
H
H
C
H
H
C
H
H
C
H
H Cross linking
C
H
H
Figure E.3
Common Photoactive Compound of
Diazonaphthoquinone (DNQ)
Figure E.4A
C
CH
3
CH
3
SO
2
O
N
2
Common Photoactive Compound of
Diazonaphthoquinone (DNQ)
C
CH
3
CH
3
SO
2
O
N
2
R =
O
N
2
R
Figure E.4B
Novolak Polymer
CH
3
HO
CH
2
HO
CH CH
2
CH
3
CH CH
2
Figure E.5
Reactions of DNQ After Exposure to UV Light
Figure E.6
+ UV Light
R
N
2
O
Photo active component
R
OH
C
O
+N
2
Dissolution enhancer
Through a cascade of reactions involving light
Fabrication (New York: Oxford University Press, 1996), p. 185
Chemical Amplification of Photoresist
with tBOC Deprotection Reaction
Figure E.7
Redrawn from T. Ueno, Chemistry of Photoresist Materials, Edited by J. Sheats and B. Smith, Microlithography,
Science and Technology (New York: Marcel Dekker, 1998), p. 465. Adapted by S. Postnikov
S
+
X + UV light H
+
X
Acid catalyst
Onium salt
(CH
2
CH)
n
Heat
OH
+ CO
2
PHS
O
O C O C CH
3
CH
3
CH
3
H
+
Protecting
group
(CH
2
CH)
n
tBOC
Isobutelene
(escapes polymer)
H
+
+ C
CH
3
CH
3
CH
2
+
Semiconductor
Appendix F
Etch Chemistry
Semiconductor
Appendix F
Etch Chemistry
Etch Chemistries of Different Etch Processes
Etched
Material
Conventional Chemistry
New
Chemistry
Benefits
PolySi Cl
2
or BCl
3
/CCl
4
Cl
2
or BCl
3
/CF
4
sidewall
Cl
2
or BCl
3
/CHCl
3
passivating
Cl
2
or BCl
3
/CHF
3
gases
SiCl
4
/Cl
2
BCl
3
/Cl
2
HBr/Cl
2
/O
2
Br
2
/SF
6
SF
6
CF
4
No carbon contamination.
Selectivity to SiO
2
& resist.
Higher etch rate.
Al. Cl
2
BCl
3
+ sidewall passivating gases
SiCl
4
SiCl
4
/Cl
2
BCl
3
/Cl
2
HBr/Cl
2
Improved profile control.
Al with 1% Si
and 0.5% Cu
Same as Al BCl
3
/Cl
2
+ N
2
N
2
accelerates Cu etch rate.
Al with 2% Cu BCl
3
/Cl
2
/CCl
4
SF
6
only
WSi
2
, TiSi
2
,
CoSi
2
CCl
2
F
2
CCl
2
F
2
/NF
3
CF
4
/Cl
2
Controlled etch profile.
Single-crystal Si Cl
2
or BCl
3
+ sidewall passivating
gases
CF
3
Br
HBr/NF
3
Higher selectivity for trench
etch.
SiO
2
(BPSG) CCl
2
F2
CF
4
C
2
F
6
C
3
F
8
CCl
2
F
2
CHF
3
/CF
6
CHF
3
/O
2
CH
3
CHF
2
Environmentally improved
alternatives.
Si
3
N
4
CCl
2
F
2
CHF
3
CF
4
/O
2
CF
4
/H
2
CHF
3
CH3CHF2
Environmentally improved
alternatives.
Y. Lii, Etching, ULSI Technology, ed. C. Chang and S. Sze (New York: McGraw-Hill, 1996), p. 354.

IA - Safety Issues For MicroFabrication

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

IA - Safety Issues For MicroFabrication

Uploaded by

Copyright:

Available Formats

UkM Dr, Nowshud Amin

You might also like