BF5030...

Silicon N-Channel MOSFET Tetrode Designed for input stages of UHF- and VHF-tuners with AGC function Supporting 5 V operations and power saving 3 V operations Integrated ESD gate protection diodes Very low noise figure High gain, high forward transadmittance Very good cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101

3 4 1

Drain AGC HF Input G2 G1 R G1 VGG

HF Output + DC

GND
EHA07461

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type BF5030 BF5030R BF5030W

Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S

Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -

Marking KXs KXs KXs

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BF5030...
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS 94 C, BF5030W TS 76 C, BF5030, BF5030R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF5030W BF5030, BF5030R
1For

Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot

Value 8 25 1 6 200 200

Unit V mA mA V mW

Tstg Tch Symbol

Rthchs

-55 ... 150 150

Value
280 370

Unit K/W

calculation of RthJA please refer to Application Note Thermal Resistance

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BF5030...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Drain-source breakdown voltage ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 3 V, VG2S = 3 V, RG1 = 82 k VDS = 5 V, VG2S = 4 V, RG1 = 180 k Gate1-source pinch-off voltage VDS = 3 V, VG2S = 3 V, ID = 20 A VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 3 V, VG1S = 3 V, ID = 20 A VDS = 5 V, VG1S = 4 V, ID = 20 A VG2S(p) 0.7 0.7 VG1S(p) 0.7 0.7 IDSX 13 13 V IDSS 100 100 mA +IG2SS 50 +IG1SS 50 nA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 12 V typ. max.

Unit

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BF5030...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Output capacitance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Power gain VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Noise figure VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Gain control range VDS = 3 V, V G2S = 3...0 V , f = 800 MHz VDS = 5 V, V G2S = 4...0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 AGC = 10 dB AGC = 40 dB G p 45 45 90 96 50 50 94 92 98 dB F 1.3 0.9 1.3 0.9 Gp 24 34 24 34 dB Cdss 1.6 1.5 dB Cg1ss 2.7 2.8 gfs 41 41 pF mS typ. max.

Unit

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BF5030...
Total power dissipation Ptot = (TS) BF5030W Total power dissipation Ptot = (TS) BF5030, BF5030R

220
mA

220
mW

180 160

180 160

P tot

140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150

P tot

140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150

TS

TS

Drain current ID = (IG1) VDS = 3 V, VG2S = 3 V VDS = 5 V, VG2S = 4 V

35
mA

Output characteristics ID = (V DS) VG1S = Parameter VDS = 3 V, VDS = 5 V

22
mA 1.4V 1.4V 1.3V

18 25 16

ID

ID

14 12 10 8
1.2V 1.2V 1.3V

20

15

10

6 4 2
1V 1V

0 0

10

20

30

50

0 0

12

IG1

VDS

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BF5030...
Gate 1 current IG1 = (V G1S) VG2S = Parameter VDS = 3 V, VDS = 5 V
200

Gate 1 forward transconductance g fs = (ID),V G2S = Parameter VDS = 3 V, VDS = 5 V

60
mS 3V 4V 3V 2.5V

4V

50 45

I G1

3.5V Gfs 3V

40 35 30 25 20 15 10 5
1.5V 1.5V 2V 2V

100

3V 2.5V 2.5V

50

2V 2V

0 0

0.5

1.5

0 0

10

15

20

25

30

mA ID

40

VG1S

Drain current ID = (VG1S) VG2S = Parameter VDS = 3 V, VDS = 5 V

32
mA 4V 3V 3V 2V 2.5V

Drain current ID = (V GG) VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
14
mA

24

10

ID

ID
8
1.5V

20

16

6 12
1.5V

8
1V 1V

0 0

0.2

0.4

0.6

0.8

1.2

1.4

1.8

0 0

VG1S

VGG

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BF5030...
Drain current ID = (VGG) RG1 = Parameter in k VDS = 3 V, VDS = 5 V
26 mA
68k 100k 120k 82k

Power gain Gps = (VG2S), f = 45 MHz VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
40

22 20 18

dB

ID

16 14 12 10 8 6 4 2 0 0 1 2 3

100k 120k

150k

180k

G ps

20

10

-10

-20 0

VGG=VDS

VG2S

Noise figure F = (VG2S), f = 45 MHz VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
8

Noise figure F = (VG2S), f = 800 MHz VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
8

dB

dB

F
4 2 2 0 0
V

0 0

VG2S

VG2S

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BF5030...
Power gain Gps = (VG2S), f = 800 MHz VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
30
dB dBV

Crossmodulation Vunw = (AGC) VDS = 3 V, VG2S = 3 V, Rg1 = 82 k VDS = 5 V, VG2S = 4 V, Rg1 = 180 k
115

20

V unw
V VG2

15
Gps

105

10 5 0 -5 -10 -15 -20 0

100

95

90

0.5

1.5

2.5

85 0

10

15

20

25

30

35

40 dB

50

AGC

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BF5030...
Crossmodulation test circuit

VAGC

VDS 4n7

R1 10k 4n7

2.2 uH

4n7

RL
50

RGEN
50

4n7 50 RG1

VGG

Semibiased

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Package SOT143

BF5030...

Package Outline
0.15 MIN.

2.9 0.1 1.9

4 3

1 0.1 0.1 MAX.

1.3 0.1

2.4 0.15

10 MAX.

10 MAX.

0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B

0.08...0.1

0...8 0.2 M A

Foot Print
0.8 1.2 0.8
0.9

1.2 0.8

0.8

Marking Layout (Example)

Manufacturer

RF s
Pin 1

56

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel

0.9

1.1

2005, June Date code (YM)

BFP181 Type code

0.2

Pin 1

3.15

2.6 8

1.15

10

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Package SOT143R

BF5030...

Package Outline
B
0.15 MIN.

2.9 0.1 1.9

4 3

1 0.1
0.1 MAX.

2.4 0.15

2 0.2
+0.1 0.8 -0.05

10 MAX.

0.08...0.15

0.4 +0.1 -0.05 1.7 0.25

M

0... 8
0.2
M

Foot Print
0.8 1.2 0.8

0.8

0.8

1.2

Marking Layout (Example)

Reverse bar

0.9

1.1

0.9

2005, June Date code (YM)

Pin 1

Manufacturer
BFP181R Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

3.15

2.6

1.15

10 MAX. 1.3 0.1

11

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Package SOT343

BF5030...

Package Outline
2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1
M +0.1 0.6 -0.05

0.9 0.1 0.1 MAX. 0.1 A

1.25 0.1 2.1 0.1

0.1 MIN.

0.15 -0.05 0.2

M

+0.1

Foot Print
0.6
0.8

1.15 0.9

Marking Layout (Example)

Manufacturer

1.6

2005, June Date code (YM)

Pin 1

BGA420 Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

2.15

2.3

1.1

12

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BF5030...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.

Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

13

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