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Product specification
BU2508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W C C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
1 Turn-off current.
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
Cisol
22
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 100 mA;VCE = 5 V IC = 4.5 A;VCE = 1 V
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) 4.7 0.25 5.7 0.35 s s TYP. 80 MAX. UNIT pF s s
ts tf
5.0 0.4
6.0 0.6
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
ICsat
+ 50v 100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
ts IBend
- IBM
IC / mA
1mH
250 200
100
IBend
LB
D.U.T. 12nF
BY228
0 VCE / V
-VBB
min VCEOsust
TRANSISTOR IC DIODE
ICsat
100
h FE
5V
IB
IBend
10
t 20us 26us 64us VCE
Tj = 25 C Tj = 125 C
1V
1 0.01
t
0.1 IC / A
10
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
VBESAT / V
Tj = 25 C Tj = 125 C
10
VCESAT / V
Tj = 25 C Tj = 125 C
6A 4.5A
IC/IB= 3 4 5
1 3A IC=2A 0.1
0.1
1 IC / A
10
0.1
1 IB / A
10
1000
IC = 4.5A 3.5A
100
Tj = 25 C Tj = 125 C
10
0.1 1 IC / A 10
0.1
1 IB / A
10
Fig.11. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 16 kHz
ts, tf / us ts
Tj = 125 C
IC= 6A 4.5A 3A 2A
12 11 10 9 8 7 6 5 4 3 2 1 0 4
2 IB / A
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
100
IC / A
100
IC / A
= 0.01
= 0.01
tp =
tp =
10 us
10 us
Ptot max
Ptot max
100 us
100 us
1 ms
1 ms
0.1
10 ms DC
0.1
10 ms DC
Fig.13. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
Normalised Power Derating
with heatsink compound
Fig.15. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and 30 5 newton force on the centre of the envelope.
PD%
20
40
60
80 Ths / C
100
120
140
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3
25
Fig.16. SOT399; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
November 1997
Rev 2.300
Philips Semiconductors
Product specification
BU2508AX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
November 1997
Rev 2.300
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