Bohr’s Model of the Atom Explained

Atom [ Bohrs model ]
19-04-2013
Atom [ Bohrs model ]
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Molecule & Compound
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Shells & Energy

--
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Less valance Electron = Conductivity
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Co-Valent Bonds
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Heat Energy Releases - Electrons
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Crystal Structure
-
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Neutral to Charge
Sodium, Chloride separately are neutral
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Group IV-A elements

-
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Band Theory
-
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Band Theory Solids [ Insulator ]

..
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Metals & Semiconductors

Band Separation
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Conductor & Insulator
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Finders
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Electro Static Charges
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Current
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Electrons & Holes

Thermal Release
Intrinsic
Extrinsic
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Phosphorous Silicon Boron

Intrinsic / Extrinsic
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Phosphorous Silicon Boron
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Pure P & N Type
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Electron Hole Movements

-
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Electron Hole Movement
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Hole Current
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Electron Hole Flow Analogy
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Voltage is Pump Supplying Electron & Recycle
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Prefixes
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Prefixes
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Component Symbols
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Schematics
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Earth
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Voltage
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Voltage
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Voltage Rise - Drop
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Resistors
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Potentiometers
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Carbon & Wire wound Resistors
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Ohms Law
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Capacitor & Time Constant
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Capacitor
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RC time Constant
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RC time Constant
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SEMICONDUCTORS
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Silicon Structure
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Hole Creation
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Hole Creation
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Current in Semiconductor
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Electron & Hole Creation
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Electron Hole Movement

-
An increase in temperature of a semiconductor can result in a substantial increase in the number of free electrons in the material
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Elemental Semiconductors
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Majority & Minority Carriers
Ge and Si that show a reduction in resistance with increase in temperature are said to have a negative temperature coefficient
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Grown & Fused Junction Cut Bar
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Fine Metal Wire Cat Whisker
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PN Separate - Joined
Barrier Potential
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Junction Barrier Formation
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Junction & Barrier Potential
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Forward Reverse Bias
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Diode Packages
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Junction Diode
-
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Ideal Diode
Ideal diode is a SWITCH
conducting in only ONE direction
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Open Short Circuit
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Diode V-I Characteristics
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Diode V-I Characteristics
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Germanium vs Silicon
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Temperature Effects
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Temperature Effects
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DC[Static] /AC [Dynamic] Resistance
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DC[Static] /AC [Dynamic] Resistance
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Slope & Tangent..1

The derivative of a function at a point is equal to the slope of the tangent line drawn at that point.
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Slope & Tangent..2
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Load Line
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Zero Output
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Problem
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Peak Inverse Voltage -PIV

The maximum reverse-bias potential that can be applied before entering the Zener region is called the peak inverse voltage (referred to simply as the PIV rating) or the peak reverse voltage (denoted by PRV rating).
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DIODE
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Rectifier DIODEs
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Diode Operation
Forward & Reverse Bias
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Diode vs Valve
Switch Equivalent
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Diode
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Reverse Bias
Depletion Region Expands
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Forward Bias
Depletion region shrinks
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Diode Current
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Diode Current
Thermal Voltage
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Knee Current
mA
A
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Rectifier [ Half Wave ]
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Half wave Output
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Negative Output
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92
Transistors
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Transistors
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Reverse Bias -Minority Current
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Junction Interaction
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Closed Circuit
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BE Forward BC Reverse Bias
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Current Directions
Collected = Emitted Loss (Base)

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r- Parameter
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Transistors
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Power Transistors
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RF Transistors
For High frequency Operations

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Transistor Manufacturing
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Recombination at Base
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NPN / PNP
-
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PNP Biasing
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Common Base
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CB Input Characteristics
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CB Output Characteristics
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Gain Parameters
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Transfer of Resistance
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CE
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CE Collector Characteristics Curves
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CE
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Cutoff ICBO , ICEO
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Equation Example
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Transistor Switch
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CE Parameters
1 = +
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CE Parameters
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CC
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Transistor Operation Limit

Power Dissipation =
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Transistors
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Terminal Identification
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Base Bias
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TO-92 Package
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Q2T2905
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Transistor Biasing
= =
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Problem Example
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Saturation
saturation =levels reached their maximum values. highest saturation level is defined by the maximum collector current Saturation conditions are normally avoided because the basecollector junction is no longer reversebiased and the output amplified signal will be distorted
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Fixed Bias
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Load Line Analysis
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Emitter Stabilized Bias
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I/P Impedance Increased
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Emitter Stabilized -2
Sample Problem Ref PP 166

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Load Line for Emitter Stabilzed Bias
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Voltage Divider Bias
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Voltage Divider Thevenins equivalent
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Thevinins Equivalent
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Voltage Feedback Bias
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Transistor Switching
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Delay Time
Rise Time
Storage Time Fall time
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Delay Time
Rise Time
Storage Time Fall time
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Base Bias Example
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Self [Collector Feedback] Bias
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Self [Collector] Feedback Bias
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Self [Collector] Feedback Bias
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Emitter Bias Internal REE
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Emitter Bias
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Structure
-
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Bipolar Junction Transistor
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BJT = Current Control
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Transistor as Switch
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Transistor Cut-off & Saturation
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Base Input
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Base Input
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Base I/P
Small base I/p Large Emitter , Collector Output
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Transistor = back-to-back diodes
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Amplifiers
Benefit of Active device is ability to Amplify
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Amplifiers
Output is more than Input
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Amplifiers
Output is more than Input
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Amplifiers
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Oscillators
Hypothetical
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Amplifier Fundamental
.
Biasing
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Basic Amplifier
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Basic Amplifier
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Load Line
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Linear Operation
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Non-Linear OperationCutoff, Saturation
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Too Large Input
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DC & AC gains
.
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Amplifier Cascading
One after another
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Amplifier Coupling DC Blocking
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Power Ratio & bel

-
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Bel & Decibel [ dB ]
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Amplifier Cascading
One after another
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Power = V x I
-
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Cascaded - dB
-
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Bel & dB
-
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Active Mode
BE = Forward bias BC = Reverse Bias
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Typical Characteristic Curves
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186
Elementary Diode varying Resistor Model
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Current Source Model
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CE Amplifier
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Load
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Simple maths
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Common Collector
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Common Collector
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CC Amplifier
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CC = Emitter Follower
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Output = Input 0.7 V Av = 1
195
CC = Emitter Follower
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Common Base Amplifier
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CE-CB-CC Comparison
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CE-CB-CC Comparison
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Darlington Pair
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Darlington Pair
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Darlington Arrangement
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Darlington Application
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Cascode
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Amplifier Classification
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Cascading
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Cascading
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Cascading
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Cascaded RF Tuned Amplifier
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Transistor Package Types
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Differential Amplifier
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VC2 Reduced VC1 - Increased

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Single Ended Operation
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Differential mode Operation
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FET
FET
JFET -- Junction IGFET - Insulated Gate [ MOS ]
MOS - Metal Oxide Semiconductor

P-MOS N-MOS C-MOS = [ P & N ] - Complementary
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JFET
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FET = Field Effect

C
B E D
G
S
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Transistor & FET
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JFET
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FET = Source Drain - Gate
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FET = Source Drain - Gate
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Field Effect
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Field Effect
=
the 19-04-2013 conditions VGS =0 V and VDS = Vp
IDSS is the maximum drain current for a JFET and is defined by

227
Field Effect
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Field Effect Pinch Off
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FET Characteristics
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FET is Voltage Controlled Resistor
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FET vs Transistor
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FET Transfer Characteristics
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FET vs BJT
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FETs
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Depletion MOSFET
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Depletion MOSFET
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Depletion MOSFET
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Depletion MOSFET
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Enhancement MOSFET
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Depletion
240
Enhancement Operation
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Enhancement Characteristics
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Enhancement Characteristics
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Enhancement
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VMOS
VMOS FETs have a positive temperature coefficient that will combat the possibility of thermal runaway.
Compared with planar MOSFETs, VMOS FETs have reduced channel resistance levels & higher current , power ratings 19-04-2013
245
VMOS Advantages
Compared with planar MOSFETs, VMOS FETs have reduced channel resistance levels & higher current and power ratings VMOS FETs have a positive temperature coefficient that will combat the possibility of thermal runaway. The reduced charge storage levels result in faster switching times for VMOS construction compared to those for conventional planar construction
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CMOS = C= n+p
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CMOS C = n+p
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JFET
-
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JFET N Channel
-
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JFET P Channel
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FET Biasing
general relationships that can be applied to the dc analysis of all FET amplifiers are
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FET Fixed Biasing
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FET Fixed Biasing
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FET- Self Bias
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FET- Self Bias
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FET- Voltage Divider Bias
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FET- Voltage Divider Bias
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FET Voltage Divider - Characteristics
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Feedback Bias
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FET Bias Summary
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FET Bias Summary
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FET Bias Summary
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JFET
-
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JFET
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MESFET
Metal - Semiconductor
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IGFET [ MOSFET]
Insulated Gate
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Enhancement
Channel Created
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Enhancement Mode
Dotted Lines
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VMOSFET
-
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JFET
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JFET Switch
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Bleeding Resistor
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FET Active Mode
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JFET VDS vs ID
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FET vs BJT
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Trans-conductance -
gm
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IGFET - MOSFET
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FET Gate Voltage Control
Less
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Compare N , P Channel
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Enhancement - Depletion
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Superposition Rules
1. Setting all dc sources to zero and replacing them by a short-circuit equivalent Replacing all capacitors by a short-circuit equivalent Removing all elements bypassed by the shortcircuit equivalents introduced by steps 1 & 2 Redrawing the network in a more convenient and logical form
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2.
3.
4.
BJT Modeling
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BJT Modeling Superposition THEOREM
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BJT Modeling Superposition THEOREM
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2-Port Networks
Parameters -- Zi, Zo, Av, Ai
Input Impedance
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Input Impedance
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Output Impedance
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Voltage Gain
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Current Gain
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Two Port Hybrid Model h- Parameters
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h-parameter Model
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h-parameter Model
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Transistor Signal Analysis
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Transistor Signal Analysis - CB
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Transistor Signal Analysis - CE
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h Parameters
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Removing hr & ho
Approximate Equivalent Model

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CE & CB Hybrid Model
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Graphical meaning of h-params
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BJT Small Signal Analysis
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Unbypassed Emitter Resistor
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Unbypassed Emitter Resistor Input Impedance - Zi
Output Impedance - Zo
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Unbypassed Emitter Resistor Voltage Gain Current Gain
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BJT Emitter Follower
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BJT Emitter Follower
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BJT Emitter Follower - Av
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BJT Emitter Follower - Ai
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BJT Small Signal Analysis - CB
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Approximate Hybrid Model CE,CB
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Fixed Bias - CE
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Fixed Bias - CE
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Fixed Bias - CE
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CB Approximate Hybrid Model
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CB Approximate Hybrid Model
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Complete Hybrid Model
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328
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FET Small Signal Analysis

The gate-to-source voltage controls the drain-to-source (channel) current of an FET.
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The derivative of a function at a point is equal to the slope of the tangent line drawn at that point.
Mathematical Definition of gm
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Mathematical Definition of
gm
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FET Equivalent Circuit
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FET Fixed Bias
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FET Fixed Bias
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FET Self Bias Rs bypassed
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FET Self Bias Rs bypassed
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FET Self Bias Rs Un-bypassed
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rd Including
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rd Including
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rd Including
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rd Including
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rd Including
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rd Including
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FET Voltage Divider Bias
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FET Voltage Divider Bias
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FET Source Follower
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FET Source Follower
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FET Source Follower
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FET Source Follower
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FET Source Follower
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FET Common Gate
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FET Common Gate
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FET Common Gate
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FET Common Gate
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Effect of Source(Rs) & Load(RL) Resistances
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Simplified Representation
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Effect of Rs & RL
The loaded voltage gain of an amplifier is always less than the no-load level
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AC Load Line with RL
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Effect of Rs
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Effect of Rs
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Combined Effect of Rs, RL
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Emiiter Follower
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Emiiter Follower
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Combined Effect of Rs, RL For CE

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Emiiter Follower
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Combined Effect of Rs, RL CE Config
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Amplifier Cascading
One after another
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Amplifier Coupling DC Blocking
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375
Amplifier Cascading
One after another
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Cascaded - dB
-
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Amplifier Cascading
-
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Amplifier frequency Response
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Decibels
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Gain Figures & dB
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Frequency Response
RC- Coupled
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Transformer- Coupled
382
Frequency Response
Direct- Coupled
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Half Power Points
383
Frequency Response Coupling Capacitor Effect
At LF XL is more drop is More - therefore Vs to base is reduced
At Output side collector O/p is reduced to load Phase in RC is leading at R Signal is reduced Net O/P and hence gain is Reduced
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Frequency Response Bypass Capacitor Effect - LF Bypass Capacitor Reactance is not Zero
Voltage gain is reduced at LF
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Frequency Response Internal Capacitor Effect - LF

At LF Xc is more & acts as Open No effect on Gain
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Miller Capacitance - HF
Gain is reduced due to Voltage divider effect
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Bandwidth & Normalized Gain
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Decibel vs Frequency 0 dB Ref
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Gain & dB Value - Voltage
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Gain & dB Value - Power
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Miller Effect Capacitance
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Miller Effect Capacitance
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Hi- Frequency Response
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Frequency Roll-off Response
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Frequency Roll-off HF Response
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Total Frequency Response
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Hi- Frequency Response
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Hi-Frequency Response Miller Effect
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Hi Frequency Response Miller-C
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Multistage Frequency Response
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Freq Response of Multistage
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VC2 Reduced VC1 - Increased

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Single Ended Operation
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Differential mode Operation
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Common Mode I/P Operation
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Differential Mode
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Common Mode
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Gain Equations
Differential I/P
Common I/P
Opposite Inputs
Same Polarity I/P
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414
Common Mode Rejection
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Capacitor Charge and Discharge
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416 5
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417 5
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418 5

RC circuit charge and discharge curves
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419 5

Exponential charge and discharge Time constant ()
v E 1 e
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t RC
420 6
RC time Constant
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421

Transposing the curve equation for t
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422 7
DC-AC Formulae - 1
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423
DC-AC Formulae - 2
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424
DC-AC Formulae - 3
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425

Bohr’s Model of the Atom Explained

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Bohr’s Model of the Atom Explained

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Atom [ Bohrs model ]

Atom [ Bohrs model ]

Molecule & Compound

Shells & Energy

Less valance Electron = Conductivity

Less valance Electron = Conductivity

Less valance Electron = Conductivity

Heat Energy Releases - Electrons

Group IV-A elements

Band Theory Solids [ Insulator ]

Metals & Semiconductors

Conductor & Insulator

Electro Static Charges

Electrons & Holes

Phosphorous Silicon Boron

Phosphorous Silicon Boron

Pure P & N Type

Electron Hole Movements

Electron Hole Movement

Electron Hole Flow Analogy

Voltage is Pump Supplying Electron & Recycle

Voltage Rise - Drop

Carbon & Wire wound Resistors

Capacitor & Time Constant

Electron & Hole Creation

Electron Hole Movement

Majority & Minority Carriers

Grown & Fused Junction Cut Bar

Fine Metal Wire Cat Whisker

Junction Barrier Formation

Junction & Barrier Potential

Forward Reverse Bias

Open Short Circuit

Diode V-I Characteristics

Diode V-I Characteristics

DC[Static] /AC [Dynamic] Resistance

DC[Static] /AC [Dynamic] Resistance

Slope & Tangent..1

Slope & Tangent..2

Peak Inverse Voltage -PIV

Rectifier [ Half Wave ]

Half wave Output

Reverse Bias -Minority Current

BE Forward BC Reverse Bias

BE Forward BC Reverse Bias

BE Forward BC Reverse Bias

Collected = Emitted Loss (Base)

For High frequency Operations

CE Collector Characteristics Curves

Cutoff ICBO , ICEO

Transistor Operation Limit

Load Line Analysis

Emitter Stabilized Bias

I/P Impedance Increased

Sample Problem Ref PP 166

Load Line for Emitter Stabilzed Bias

Voltage Divider Bias

Voltage Divider Thevenins equivalent

Voltage Divider Bias

Voltage Feedback Bias

Base Bias Example

Self [Collector Feedback] Bias

Self [Collector] Feedback Bias