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Product specification
BU2520AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V A A A A mA A W C C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
1 Turn-off current.
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
Cisol
22
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 100 mA; VCE = 5 V IC = 6 A; VCE = 5 V
TYP. 13.5 13 7
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 6.0 A; LC = 330 H; Cfb = 9 nF; IB(end) = 0.85 A; LB = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A / s) ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 H; -VBB = 4 V; (-dIB/dt = 0.8 A / s) 4.5 0.35 5.5 0.5 s s TYP. 115 MAX. UNIT pF
3.0 0.2
4.0 0.35
s s
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
+ 50v 100-200R
IC
TRANSISTOR DIODE
ICsat
IB
IBend t
100R 6V 30-60 Hz
1R
VCE
IC / mA
ICsat 90 % IC
250
10 %
200
ts IB
tf
100
IBend
t
0 VCE / V min VCEOsust
- IBM
TRANSISTOR IC DIODE
ICsat
Lc
IB IBend t 20us 26us
IBend
64us VCE
LB
T.U.T. Cfb
-VBB
t
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
100
hFE
Tj = 25 C
1.2 1.1 1
VBESAT / V
Tj = 25 C
5V
Tj = 125 C
Tj = 125 C
10 1V
0.6
0.1
1 IC / A
10
100
10
8A
IC/IB= 3 4 5
0.1 5A IC = 4 A
6A
0.1
1 IC / A
10
0.1
1 IB / A
10
1000
Tj = 25 C
Tj = 125 C
10
1 IC / A
10
100
0.1
1 IB / A
10
Fig.12. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; parameter frequency
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us 16 kHz ts
PD%
IC = 6A 5A tf 0.1 1 IB / A 10
Fig.13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
ts, tf / us 32 kHz
12 11 10 9 8 7 6 5 4 3 2 1 0
10
ts
0.1
IC = 6A 5A tf 10
0.01
P D
tp
D=
tp T t
0.1
1 IB / A
1E-04
1E-02 t/s
1E+00
Fig.14. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
IC / A 100
BU2520AF
tp = ICM
= 0.01
30 us
ICDC 10 100 us
Ptot 1
1 ms
0.1 10 ms DC
Fig.17. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g
15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2
5.2 max
o 45
seating plane
3.5
5.45
Fig.18. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 1.500
Philips Semiconductors
Product specification
BU2520AF
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
September 1997
Rev 1.500
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