Fast Recovery Epitaxial Diode (FRED)

DSEI 30

IFAVM = 30 A VRRM = 1000 V trr = 35 ns

VRSM V 1000 1000

VRRM V 1000 1000

Type

TO-247 AD
Version A

ISOPLUS 247TM
Version AR

DSEI 30-10A DSEI 30-10AR

C A C (TAB)

C A Isolated back surface *

A = Anode, C = Cathode Symbol IFRMS IFAVM x IFRM IFSM Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 TC = 25C Mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab 138 0.8...1.2 20...120 2500 6 A A A A A A A A2s A2s A2s A2s C C C W Nm N V~ g

* Patent pending

Features
q

q q q q

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

q q q

International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0
Version AR isolated and UL registered E153432

TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md * FC VISOL ** Weight
* Verson A only; ** Version AR only

Applications
q

q q q

q q q

Symbol

Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 36 A;

Characteristic Values typ. max. 750 250 7 2 2.4 1.5 12.5 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A

Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

IR

VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ = 150C TVJ = 25C

Advantages
q q

VF VT0 rT RthJC RthCK RthJA trr IRM

q q

For power-loss calculations only TVJ = TVJM

High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling

IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C

35 16

50 18

x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

2000 IXYS All rights reserved

1-2

026

DSEI 30, 1000 V

Fig. 1 Forward current versus voltage drop.

Fig. 2 Recovery charge versus -diF/dt.

Fig. 3 Peak reverse current versus -diF/dt.

Fig. 4 Dynamic parameters versus junction temperature.

Fig. 5 Recovery time versus -diF/dt.

Fig. 6 Peak forward voltage versus diF/dt.

Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102

Dimensions

Fig. 7 Transient thermal impedance junction to case.

2000 IXYS All rights reserved

2-2