RF - CH05 - Impedance - Matching - 2011-12 - HRC - EE - NCKU 0106 PDF

2011-12 H.-R.
Chuang EE NCKU
5-1

CHAPTER 5

Impedance Matching and Smith Chart

* Pozar MW (Ch 5), Impedance Matching and Tuning
* Pozar RF (Ch 2), Itransmission Lines & Microwave Networks
*Ludwig, (Ch 3, Ch 8), Matching and Biasing Networks
*Rogers, (Ch 4), Radio Frequency Integrated Circuit Design

- Matching with Lumped Elements
- L Network
- T & t Networks
- Lumped Elements for MIC : Chip R, L, C.
- Microstrp Single-Stub and Double-Stub Tuning
- Quarter-Wave Transformer
- * The Bode-Fano Criteria

Appendix Smith Chart

Transmitter
L
C
T
Z
A
Z
M
Z

2011-12 H.-R. Chuang EE NCKU
5-2
RF
signal
X
RF
signal
X
RF
signal
X
I mpedance matching (or tuning) is important for the following reasons :

Z
0
) /( ) ( ) (
0 0 11
Z Z Z Z S
in in in
+ = I or
: Loss) Return (or t coefficien Reflection
Matching
Network
L
Z
incident
(orinput)
reflection
in
Z
Load

- minimum power loss in the feed line & maximum power delivery
- linearizing the frequency response of the circuit
- improving the S/N ratio of the system for sensitive receiver components (low-
noise amplifier, etc.)
- reducing amplitude & phase errors in a power distribution network (such as
antenna array-feed network)

* Factors in the selection of matching networks
- complexity -bandwidth requirement (such as broadband design)
- adjustability - implementation (transmission line, chip R/L/C elements ..)

RF Choke

/4 microstrip RF Choke

4
2
-4
-2
0.5 0.25
0
Z
Short-
Cirucited
(S.C.)
0
/ Z X
sc
l
* At high freq.,
capacitance is like
Short-cirucited

5-3
Matching Network Types: L-/T-/t-section Networks
L-section Networks (Two-component ): Lumped elements: L/C

S
Z
L
Z
L
C
) (a
S
Z
L
Z
1
L
2
L
) (e
S
Z
L
Z
1
L
2
L
) ( f
S
Z
L
Z
L
C
) (b
S
Z
L
Z
2
C
) (c
1
C
S
Z
L
Z
1
C
) (d
2
C
S
Z
L
Z
L
) (g
C
S
Z
L
Z
L
) (h
C

In any particular region on the Smith chart,
several matching circuits will work and others
will not.
The figure shows what matching networks will
work in which regions.
How does one choose?
There are a number of popular reasons for
choosing one over another.

1. Sometimes matching components can be
used as dc blocks (capacitors) or to provide
bias currents (inductors).
2. Some circuits may result in more reasonable
component values.
3. Personal preference. Sometimes when all
paths look equal, you just have to shoot
from the hip and pick one.
4. Stability. Since transistor gain is higher at
lower frequencies, there may be a low-
frequency stability problem. In such a case,
sometimes a highpass network (series
capacitor, parallel inductor) at the input
may be more stable.
5. Harmonic filtering can be done with a
lowpass matching network (series L,
parallel C ). This may be important, for
example, for power amplifiers (PA).

5-4
L-section Network

(1) complex Z
L
to real Z
0
matching
jX
Z
L
jB
(a)
Z
L
jB
(b)
jX
0
Z
admittance
admittance
0
Z

How to determine jX & jB ? Let z
L
= Z
L
/ Z
o
= (R
L
+ jX
L
) / Z
o
= r + jx

1. Analytic Solutions or 2. Smith Chart Solution

(1) if ) 1 (
0
> > z Z R
L
[z
L
is inside the (1 +jx) circle ] =>choose (a) why?
for impedance matching (to Z
0
) => jX
jB R jX
Z
L L
+
+ +
=
1
1
0
( )

=
=
B XR X Z R Z
X BX BZ R X
L L L
L L L
( )
( )
0 0
0
1
=>
+ =
+
+
=
) ( ) ( ) 1 (
0 0
2 2
0
2 2
0
L L L
L L
L L L L L
R B Z R Z X B X
X R
R Z X R Z R X
B

(2) if ) 1 (
0
< < z Z R
L
[z
L
is outside the (1 +jx) circle ] =>choose (b) why?
for impedance matching (to Z
0
) => jB
R j X X Z
L L
+
+ +
=
1 1
0
( )

+ =
+ =
BZ X X Z R
X X BZ R
L L
L L
0 0
0
( )
( )
=>
=
=
0 0
0
) (
) (
Z R R Z B
X R Z R X
L L
L L L

(1+jx) circle
r >1
r <1
r
x
u Z I = + = I
+ = =
| | ) /( ) (
/
L o L o L L
o L L
Z Z Z Z
jx r Z Z z

5-5
EX (Pozar MW EX 5.1) (Pozar RF EX 2.5)

jX
Z
L
jB
O =100
0
Z
O =
+ =
100 200 j
jX R Z
L L L

Since R
L
=200 > Z
0
=100 O (z
L
is inside the (1 +jx) circle)

We choose (a) The solutions are

RL 200 XL 100 Zo 100
B1
XL
RL
Zo
RL
2
XL
2
ZoRL
. .
RL
2
XL
2
B1 2.89910
3
.
=
X1
1
B1
XL
Zo
RL
.
Zo
B1RL
.
X1 122.474 =
B2
XL
RL
Zo
RL
2
XL
2
ZoRL
. .
RL
2
XL
2
B2 6.89910
3
.
=
X2
1
B2
XL
Zo
RL
.
Zo
B2RL
.
X2 122.474 =

At f =500 MHz

O =100
0
Z
38.8nH
0.92pF
O = 100 200 j
Z
L
Solution 1 (low pass)
O =100
0
Z
2.61pF
46.1nH
O = 100 200 j
Z
L
Solution 2 (high pass)

BW
% 60 5 . 0 / 3 . 0 3 . 0
5 . 9 2 ) 1 . 0 ( 33 . 0
2
= ~
= ~ ~ I ~ I
GHz BW
dB RL SWR
bandwidth (1) Solution
&
(low pass)
(high pass)

5-6
Smith Chart Representation of the Matching Process

O =100
0
Z
38.8nH
0.92pF
O = 100 200 j
Z
L
Solution 1 (low pass)

O =100
0
Z
38.8nH
0.92pF
O = 100 200 j
Z
L
0.92pF
38.8nH
o
o L o L L
o L L
Z Z Z Z
j Z Z z
6 . 26 45 . 0
) /( ) (
2 /
Z =
+ = I
= =

O = 100 200 j
Z
L

5-7

(2) Complex to complex conjugate matching (Ludwig, RF Circuit Design P
401
)

(Conjugate Matching for maximum power transfer )

versa vice &
0 ) ( of ) ( argument
" " choose
> - -
+
O = > O = ) 75 ( ) 150 (
A T
R R
GHz f
j Z
j Z
A
T
2
15 75
75 150
=
O + =
O + =
T
Z A
Z
*
A M
Z Z =
Transmitter
Z
L
jB
jX
admittance
0
Z
complex Z
L
to real Z
0
matching
complex Z
A
to complex Z
T

conjugate matching

5-8

-
+ = + = =
+ = + = =
O =
2 . 0 1 75 / ) 15 75 ( /
1 2 75 / ) 75 150 ( /
75
0
0
0
j j Z Z z
j j Z Z z
Z
A A
T T
Let

GHz f
j Z
j Z
A
T
2
15 75
75 150
=
O + =
O + =
T
Z A
Z
*
A M
Z Z =
Transmitter
complex Z
T
to complex Z
A

conjugate matching

5-9
(3) General L-section matching network (complex to complex)

GHz f
j Z
j Z
L
s
2
50 25
25 50
=
O =
O + =
+ =
=
+ =
1 5 . 0 *
1 5 . 0
5 . 0 1
j z
j z
j z
L
L
s
L
z
*
L
z
s
Z L
Z
*
L s
Z Z =
Transmitter
complex Z
s
to complex Z
L
: conjugate matching
*
L
D C B A
s
z z
paths) (four , , ,

A
C
B D

5-10
Ex: L-section Lumped-Elements & Microstrip Matching Networks

Conjugately Matched Amplifier Design (Pozar MW EX11-3 or RF EX6-3 )
Design an amplifier for maximum gain at 4.0 GHz using single-stub matching
sections. Calculate and plot the input return loss & the gain from 3 to 5 GHz. The
GaAs FET has the following S parameters (Z
0
=50 O):

f S S S S (GHz)
11 21 12 22

30 080 89 99 003 56 076 41
40 072 116 76 003 57 073 54
50 066 142 54 003 62 072 68
. . . .
. . . .
. . . .
2.86
2.60
2.39
Z Z Z Z
Z Z Z Z
Z Z Z Z

FET S-parameters Touchstone file: Poz_11-3.s2p

! poz_11-3.s2p : Pozar Ex. 11-3 transistor S parameters
! Typical s-parameters at minimum attenuation setting, Ta=25C
#ghz s ma r 50
3.00 0.800 -89.0 2.860 99.0 0.030 56.0 0.760 -41.0
4.00 0.720 -116.0 2.600 76.0 0.030 57.0 0.730 -54.0
5.00 0.660 -142.0 2.390 54.0 0.030 62.0 0.720 -68.0

It cab be derived that (see chapter of RF Amplifier Design)

Z = I = I
Z = I = I
Z = I
Z = I
o
L out
o
S in
L
s
61 87 . 0
123 87 . 0
61 876 . 0
123 872 . 0
*
*
&

5-11
Microstrip Matching Networks
0120 .
50O
5
0
O
5
0
O
0206 .
0206 .
0206 .
50O
50O
50O
out
I
s
I
in
I
L
I

(f =4 GHz)

) 50 (
5 . 83 68 . 12
97 . 26 43 . 4
61 87 . 0
123 87 . 0
61 876 . 0
123 872 . 0
0
*
*
O =
=
=
Z = I = I
Z = I = I
Z = I
Z = I
Z
j Z
j Z
L
in
o
L out
o
S in
L
s
&

Lumped Elements Matching Networks

1.63nH
2.54pF
4.19nH
1.32pF
50O
50O
3 1
2 4
0
0
0
out
I
s
I
in
I
L
I

5-12
* By Smith-Chart tool

DP-Nr. 1(4.4 - j27.0)Ohm Q =6.1 4.000 GHz
DP-Nr. 2(4.4 +j14.1)Ohm Q =3.2 4.000 GHz
DP-Nr. 3(49.4 - j0.2)Ohm Q =0.0 4.000 GHz

DP-Nr. 1(4.4 - j27.0)Ohm Q =6.1 4.000 GHz
DP-Nr. 2(3.6 +j13.0)Ohm Q =3.6 4.000 GHz
DP-Nr. 3(50.4 +j1.4)Ohm Q =0.0 4.000 GHz

rtransmission-line matching network
(open-circuited stub)

5-13

DP-Nr. 1(4.4 - j27.0)Ohm Q =6.1 4.000 GHz
DP-Nr. 2(3.6 - j12.7)Ohm Q =3.5 4.000 GHz
DP-Nr. 3(48.0 - j0.0)Ohm Q =0.0 4.000 GHz

Transmission-line matching network
(shorted-circuited stub)

5-14

Forbidden Regions for L-type Matching Networks with O = = 50
0
Z Z
s

=>The shaded areas denote values of load impedance that cannot be matched to 50

5-15
Design Example: Forbidden Regions for L-type Matching Networks

50) = (with
network - L
of regions forbidden
from (d) or (c) choose =>
1 > 1.6 = Since
for
S
L
L
L L
Z
z
GHz f
Z
j z
X R
1
) 50 (
2 . 1 6 . 1
60 80
0
0
=
O =
=
O = O =

5-16

Quality factor & Bandwidth (BW) (there are much more to be discussed!)

P
P
s
s
n P P P s s s
G
B
R
X
Q jB G Y jX R Z
| |
or
| |
or = + = + =
L
o o n
L
Q
f
BW
BW
f Q
Q = =
|
.
|
\
|
=
2

* T Matching Network (discussed next)

5-17
* T & t Matching Network: The.addition of 3rd element into the two-element (L) matching
network introduces an additional degree of freedom in the i!uit, and allows us to control
the value of Q
L
(to be discussed)by choosing an appropriate intermediate impedance. =>wider
(matching) bandwidth

T Matching Network

t Matching Network

GHz f
j Z
j Z
L
in
1
30 60
20 10
=
O =
O + =
GHz f
j Z
j Z
L
in
1
30 60
20 10
=
O =
O + =

5-18
Comparison between L-, T - & t - network
Design a match circuit at the center frequency of 100 MHz

* Prof. C.-F. Chang course note (NCCU)
51 O

0.1 H

10 pF

510 O

L
t
T
4-element ladder

5-19

Microstrip Line Matching Networks (Ludwig P
431
)
In the mid-GHz and higher frequency range, the wavelength becomes
sufficiently small and the distributed components are widely used. Also, the
discrete R/L/C lumped elements will have more noticeable parasitic effects (see
chapter 2) and let to complicating the circuit design process
Distributed componenets (such as transmission line segments) can be used
to mix with lumped elements

From Discrete Components to Microstrip Lines
Avoid using inductors (if possible) due to higher resistive loss (& higher price)

In general, one shunt capacitor & two series transmission lines is
sufficiently to transform any load to any input impedance.
EX: transform load

L
Z to an input impedance
in
Z
Identify input & load SWR circles

Choose A (y
A
=1-j0.6) & transform z
L
to
A by a series TL (l
1
)

=>Transform A to B (on the input SWR circle)
by a parallel C
1

=>Transform B to z
in
by a series TL (l
2
)

GHz f
j z j Z
j z j Z
in in
L L
5 . 1
6 . 1 2 . 1 80 60
2 . 0 6 . 0 10 30
=
O + = O + =
O + = O + =
z
L
+series-TL (l
1
)
=>A +shunt C
1

=>B +series-TL (l
2
)
=>z
in

5-20
Single-Stub Matching Networks

- 4 adjustable parameters:
) , , (
, 0 , 0 L L s s
Z l Z l

O + = =
+ = =
= =
O =
O + =
O =
2 . 1 1 /
6 . 0 8 . 0 / 1
6 . 0 8 . 0 /
75
90 75
45 60
0
0
0
j Z Z z
j z y
j Z Z z
Z
j Z
j Z
in in
L L
L L
in
L
g =0.8
conductance circle
I nput SWR circle associated with zin
has two intersected points (A & B) with
g =0.8 conductance circle
yA=0.8 +j1.05 yB=0.8 - j1.05
zL to A (yA=0.8 +j1.5) by adding a shunt open-circuited (O.C.)TL lSA
The corresponding susceptance for the stub : jbSA=yA- yL =(0.8 +j1.05)-( 0.8 +j0.6)=0.45
O.C. point (g=0) to the point of ibSA =0.45 is lSA =0.067
A to zin is lLA =0.266
g =0
(O.C.)
ibSA
=0.45

5-21

|
.
|
\
|
t
t
|
.
|
\
|
t
t
=
= =>
s
sB
s
sB
sB sB s
sB
l
l
l
l
l l l
l
2
tan
2
1
tan
2
2
tan 2 tan
2
//
)
1
1
: stub circuit - short
: stub circuit - open

( design stub Balanced

5-22
Double-Stub Matching Networks

= =
= = =
O + =
O = =
051 . 0 074 . 0
8 / 3 8 /
50 50
50
1 1
3 2 1
0
s s
L
in
l l
l l l
j Z
Z Z

5-23
Quarter-Wave Transformer ()
( only useful for pure-resistance matching )

2
0 0
0
0
0
0
0
tan
&
2
4 0
0
0 0
) (
) (
tan
tan
) (
Z Z Z
Z
Z
Z
jZ Z
Z j Z
Z
l jZ Z
l Z j Z
Z Z Z
L
L L
L
l
l
L
L
in
' = =>
'
' =
+ '
' +
' =
| + '
| ' +
' = =
= |
t
= |

Ex: A microstrip quarter-wave trasformer that matches a 50 O miscrostrip line to
a 20 O load at f =4 GHz (substrate: cr=2.5, thickness h =0.75 mm)
2.13[mm] 4.03[mm]
12.73[mm]
] [ 50O
] [ 62 . 31 O
] [ 20O

* Double Quarter-Wave Transformer for wider (matching bandwidth)

) (
0
Z
) (
0
Z'
L
Z
) (
1
z V
+
transmission
line 1
4 / = l
0 ) (
1
=
z V
X
in
Z
quarter-wavelength
transmission line 2

5-24
* (Matching) Bandwidth (Af ) of a Quarter-Wave Transformer

Pozar, Mcrowave & RF Design of Wireless Systems

Approximate behavior of the reflection coefficient magnitude of a quarter-wave
transformer near the design frequency

It can be proved that
2
0
0
1
sec
2
1
2
(
(
+ =
I Z Z
Z Z
L
L
m

(
(
t
=
t
u
= =
= =
A
I
I
0
0
1
1
0 0
0
0
2
cos
4
2
4
2
2
2
) ( 2
) (
2
Z Z
Z Z
f
f
f
f f
BW
f
f
L
L
m m m
m
m

I ncreased BW for
Smaller load mismatch (Z
L
/Z
0
)

5-25

RF - CH05 - Impedance - Matching - 2011-12 - HRC - EE - NCKU 0106 PDF

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2011-12 H.-R.

EX: transform load

Identify input & load SWR circles

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