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Product specification
BU2522A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V V A A A A mA A W C C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.76 A IC = 6.0 A; IB = 1.76 A IC = 1 A; VCE = 5 V IC = 6 A; VCE = 5 V
TYP. 13.5 10 7
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 6.0 A; LC = 170 H; Cfb = 5.4 nF; IB(end) = 0.7 A; LB = 0.6 H; -VBB = 2 V; (-dIB/dt = 3.33 A / s) TYP. 115 MAX. UNIT pF
1.7 0.12
2.0 0.25
s s
IC / mA
+ 50v 100-200R
250
200
100
0 VCE / V
min VCEOsust
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
TRANSISTOR IC DIODE
I CM
VCC
t
LC
IB
I B end t 5 us 6.5 us 16 us
IBend LB T.U.T.
CFB
VCL
-VBB
VCE t
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 400 H; VCL 1500 V; LB = 3 H; CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
h FE
Tj = 85 C Tj = 25 C Tj = -40 C
ICM 90 % IC
100
BU2522A
10 % tf ts IB IBend
10
t
1 0.01
- IBM
0.1
1 IC / A
10
100
1.2 1.1 1
VBESAT / V
Tj = 85 C Tj = 25 C
BU2522A
Lc
IBend
LB
T.U.T. Cfb
BY228
0.6 0.5
-VBB
0.4
0.1
1 IC / A
10
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
10
VCESAT / V
Tj = 85 C Tj = 25 C
BU2522A
4 3.5 3
ts, tf / us
BU2522AF
1 IC/IB = 5 0.1 3
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz
PD% Normalised Power Derating
VBESAT / V
Tj = 85 C Tj = 25 C
BU2522A
100
Poff / W
10
IC = 6A 10 5A
1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06
P D tp D= tp T t
1E-04
1E-02 t/s
1E+00
Fig.11. Typical turn-off losses. Tj = 85C Poff = f (IB); parameter IC; f = 64 kHz
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
IC / A 100
BU2520A
30
IC / A
BU2522AF
tp = ICM
= 0.01
30 us
20
ICDC 10
10
100 us
Ptot 1 1 ms
500 VCE / V
1000
1500
0.1 10 ms DC
Fig.15. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature.
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
0.5 min
13.6 min
November 1995
Rev 1.100
Philips Semiconductors
Product specification
BU2522A
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
November 1995
Rev 1.100
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