FTP05N50/FTA05N50

500V N-Channel MOSFET

General Features
Low ON Resistance Low Gate Charge (typical 20.6nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free

BVDSS 500V

RDS(ON) (Max.) 1.35

ID 4.5A

Applications
High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power

Ordering Information
Part Number
FTP05N50 FTA05N50

Package
TO-220 TO-220F

Marking
FTP05N50 FTA05N50
TC=25 unless otherwise specified

Absolute Maximum Ratings

Symbol VDSS ID ID@100 IDM PD VGS EAS dv/dt TL TJ and TSTG Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25 Gate-to-Source Voltage Single Pulse Avalanche Energy L=12mH, ID=4.5A Peak Diode Recovery dv/dt[3] Soldering Temperature Distance of 1.6mm from case for 10 seconds Operating and Storage Temperature Range
[1]

FTP05N50 500 4.5

FTA05N50 4.5*

Unit V A

Figure 3 Figure 6 95 0.76 30 120 4.5 300 25 0.2

W W/ V mJ V/ns

-55 to 150

*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the Absolute Maximum Ratings may cause permanent damage to the device.

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FTP05N50 1.32 60 FTA05N50 5.0 60 Unit /W

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Electrical Characteristics
OFF Characteristics
Symbol BVDSS BVDSS/TJ IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current Min. 500 -----Typ. -0.6 ----Max. --12 100 100 -100 A
TC =25 unless otherwise specified

Unit V V/

Test Conditions VGS=0V, ID=250A Reference to 25, ID=250A VDS=500V, VGS=0V VDS=400V, VGS=0V, TC=125 VGS=+30V VGS=-30V

Gate-to-Source Leakage Current

nA

ON Characteristics
Symbol RDS(ON) VGS(TH) gfs Parameter Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Min. -2.0 -Typ. 1.14 -4.8 Max. 1.35 4.0 --

TC =25 unless otherwise specified

Unit V S

Test Conditions VGS=10V, ID=2.7A[4] VDS = VGS, ID=250A VDS =15V, ID=4.5A[4]

Dynamic Characteristics
Symbol CISS COSS CRSS QG QGS QGD Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Min. ------Typ. 685 62 13 20.6 2 7.7

Essentially independent of operating temperature

Max. -------

Unit

Test Conditions VGS=0V VDS=25V f=1.0MHZ Figure 14 VDD=250V ID=4.5A Figure 15

pF

nC

Resistive Switching Characteristics

Symbol td(ON) trise td(OFF) tfall Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min. ----Typ. 18 51 46 36

Essentially independent of operating temperature

Max. -----

Unit

Test Conditions VDD=250V ID=4.5A VGS=10V RG=20

ns

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Source-Drain Diode Characteristics
Symbol ISD ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Maximum Pulsed Current(Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min -----Typ. ---255 1200 Max. 4.5 18 1.2 --TC=25 unless otherwise specified

Units A A V ns nC

Test Conditions Integral P-N diode in MOSFET IS=4.5A, VGS=0V VGS=0V IF=4.5A,di/dt=100A/s

NOTE [1] TJ=+25 to +150 [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] ISD=4.5A, di/dt100A/s, VDDBVDSS, TJ=+150 [4] Pulse width380s; duty cycle2%.

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Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1 Impedance(Normalized)
50% 20% 10% 5% 2% 1% single pulse

ZJC, Thermal

0.1

0.01

0.001 1.0E-06

1.0E-05

1.0E-04

1.0E-03 1.0E-02 1.0E-01 tP, Rectangular Pulse Duration(s)

1.0E+00

1.0E+01

100 90 PD, Power Dissipation (W) 80 70 60 50 40 30 20 10 0 25

Figure 2. Maximum Power Dissipation vs. Case Temperature

7.0 6.0 ID, Drain Current (A) 5.0 4.0 3.0 2.0 1.0 0.0

Figure 3. Maximum Continuous Drain Current vs Case Temperature

50

75 100 125 TC, Case Temperature ()

150

25

50

75 100 125 TC, Case Temperature ()

150

Figure 4. Typical Output Characteristics 22 20 18 ID, Drain Current(A) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 VDS, Drain-to-Source Voltage(V)
VGS=4.5V VGS=4.0V VGS=5.0V VGS=5.5V VGS=15V VGS=10 V VGS=6.5V

4 RDS(ON), Drain-to-Source ON Resistance(Ohm) 3.5 3 2.5 2 1.5 1 4

Figure 5. Typical Drain-to-Source ON Resistance vs. Gate Voltage and Drain Current

ID=2.25A

ID=4.5A

50

8 10 12 14 16 VGS, Gate-to-Source Voltage(V)

18

20

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Figure 6. Maximum Peak Current Capability 100 IDM, Peak Current(A)
Transconductance may limit current in this region

10

1 0.00001

0.0001

0.001

0.01 tP, Pulse Width(s)

0.1

10

Figure 7. Typical Transfer Characteristics 14 ID, Drain-to-Source Current (A) 12 IAS, Avalanche Current(A) 10
25 -55

Figure 8. Unclamped Inductive Switching Capability 100

10

Starting TJ=25

8 6
150

Starting TJ=150

4 2 0 3 4 5 6 7 VGS, Gate-to-Source Voltage,(V) 8

0.1

0.01 1.E-06

1.E-05

1.E-04 1.E-03 1.E-02 tAV, Time in Avalanche(s)

1.E-01

Figure 9. Typical Drain-to-Source ON Resistance

1.5 RDS(ON), Drain-to-Source Resistance 2.4 2.2 2.0 1.8 (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 2 4 ID , Drain Current(A) 6 8

Figure 10. Typical Drain-to-Source On Resistance vs. Junction Temperature

RDS(ON), Drain-to-Source ON

1.4 Resistance(Ohm)

1.3
VGS=10V

1.2

VGS=20V

1.1

-75

-50

-25 0 25 50 75 100 TJ , Junction Temperature ()

125

150

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Figure 11.Typical Breakdown Voltage vs. Junction Temperature
1.20 Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 TJ , Junction Temperature () 125 150 1.3 1.2 VGS(TH) Threshold Voltage 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , Junction Temperature () 125 150

Figure 12.Typical Threshold Voltage vs. Junction Temperature

BVDSS, Drain-to-Source

Figure 13. Maximum Forward Safe Operation Area 100 10000

(Normalized)

Figure 14. Typical Capacitance vs. Drain-to-Source Voltage

10us

ID, Drain Current(A)

10

100us

C, Capacitance(pF)

1000

CISS

1ms

100

COSS

Operating in this area may be limited by RDS(ON)

10ms DC

10

CRSS

0.1 10 100 VDS, Drain-to-Source Voltage(V) 1000

1 0.01

0.1

1 10 VDS, Drain Voltage(V)

100

1000

12 VGS. Gate-to-Source Voltage(V) 10 8 6 4 2 0

Figure 15. Typical Gate Charge vs. Gate-to-Source Voltage

40 ISD, Reverse Drain Current(A) 35 30 25 20 15 10 5 0 0.25

Figure 16. Typical Body Diode Transfer Characteristics

150 25 -55

8 10 12 14 16 QG, Gate Charge(nC)

18

20

22

0.5

0.75 1 1.25 1.5 VSD, Source-to-Drain Voltage(V)

1.75

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Test Circuit

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Package Dimensions

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Published by ARK Microelectronics Co., Ltd. No.9, East Zijing Road, High-tek District, Chengdu, P. R. China All Rights Reserved.

Disclaimers
ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltds terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltds components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltds data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltds products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltds product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements.

Life Support Policy:

ARK Microelectronics Co., Ltds products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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