September 2010

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2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. A
www.fairchildsemi.com 1
UniFET-II
TM
TO-220
FDP Series
G D S
G
S
D
G
S
D
TO-220F
FDPF Series
(potted)
G S D
MOSFET Maximum Ratings T
C
=25
o
C unless otherwise noted*
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FDP10N60NZ FDPF10N60NZ Units
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage 25 V
I
D
Drain Current
- Continuous (T
C
=25
o
C) 10 10*
A
- Continuous (T
C
=100
o
C) 6 6*
I
DM
Drain Current - Pulsed (Note 1) 40 40* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 550 mJ
I
AR
Avalanche Current (Note 1) 10 A
E
AR
Repetitive Avalanche Energy (Note 1) 18.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
Power Dissipation
(T
C
=25
o
C) 185 38 W
- Derate above 25
o
C 1.5 0.3 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
300
o
C
Symbol Parameter FDP10N60NZ FDPF10N60NZ Units
R
uJ C
Thermal Resistance, J unction to Case 0.68 3.3
o
C/W R
uCS
Thermal Resistance, Case to Sink Typ 0.5 -
R
uJ A
Thermal Resistance, J unction to Ambient 62.5 62.5
FDP10N60NZ / FDPF10N60NZ
N-Channel MOSFET
600V, 10A, 0.75O
Features
R
DS(on)
=0.64O ( Typ.)@ V
GS
=10V, I
D
=5A
Low Gate Charge ( Typ. 23nC)
Low C
rss
( Typ. 10pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
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www.fairchildsemi.com
2 FDP10N60NZ / FDPF10N60NZ Rev. A
Package Marking and Ordering Information
Electrical Characteristics T
C
=25
o
C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP10N60NZ FDP10N60NZ TO-220 - - 50
FDPF10N60NZ FDPF10N60NZ TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain to Source Breakdown Voltage I
D
=250A, V
GS
=0V, T
J
=25
o
C 600 - - V
ABV
DSS
AT
J
Breakdown Voltage Temperature
Coefficient
I
D
=250A, Referenced to 25
o
C - 0.6 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V - - 1
A
V
DS
=480V, T
C
=125
o
C - - 10
I
GSS
Gate to Body Leakage Current V
GS
=25V, V
DS
=0V - - 10 A
V
GS(th)
Gate Threshold Voltage V
GS
=V
DS
, I
D
=250A 3.0 - 5.0 V
R
DS(on)
Static Drain to Source On Resistance V
GS
=10V, I
D
=5A - 0.64 0.75 O
g
FS
Forward Transconductance V
DS
=20V, I
D
=5A - 14 - S
C
iss
Input Capacitance
V
DS
=25V, V
GS
=0V
f =1MHz
- 1110 1475 pF
C
oss
Output Capacitance - 130 175 pF
C
rss
Reverse Transfer Capacitance - 10 15 pF
Q
g
Total Gate Charge at 10V
V
DS
=480V, I
D
=10A
V
GS
=10V
- 23 30 nC
Q
gs
Gate to Source Gate Charge - 6 - nC
Q
gd
Gate to Drain Miller Charge - 8 - nC
t
d(on)
Turn-On Delay Time
V
DD
=300V, I
D
=10A
R
G
=25O
- 25 60 ns
t
r
Turn-On Rise Time - 50 110 ns
t
d(off)
Turn-Off Delay Time - 70 150 ns
t
f
Turn-Off Fall Time - 50 110 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 10 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 40 A
V
SD
Drain to Source Diode Forward Voltage V
GS
=0V, I
SD
=10A - - 1.4 V
t
rr
Reverse Recovery Time
V
GS
=0V, I
SD
=10A
dI
F
/dt =100A/s
- 300 - ns
Q
rr
Reverse Recovery Charge - 2 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L =11mH, I
AS
=10A, V
DD
=50V, R
G
=25O, Starting T
J
=25C
3. I
SD
s 10A, di/dt s 200A/s, V
DD
s BV
DSS
, Starting T
J
=25C
4.Pulse test: Pulse width s 300s,Duty Cycle s 2
5. Essentially Independent of Operating Temperature Typical Characteristics
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www.fairchildsemi.com
3 FDP10N60NZ / FDPF10N60NZ Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2 4 6 8 10
0.1
1
10
100
-55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250s Pulse Test
25
o
C

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t
[
A
]
V
GS
, Gate-Source Voltage[V]
0.5 1 10
0.5
1
10
30
*Notes:
1. 250s Pulse Test
2. T
C
= 25
o
C

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
0 5 10 15 20
0.5
0.6
0.7
0.8
0.9
1.0
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V

R
D
S
(
O
N
)

[
O
]
,
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
*Notes:
1. V
GS
= 0V
2. 250s Pulse Test
150
o
C
I
S
,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
10
-1
1 10
30
1
10
100
1000
4000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss

C
a
p
a
c
i
t
a
n
c
e
s

[
p
F
]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
*Note: I
D
= 10A
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V

V
G
S
,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

[
V
]
Q
g
, Total Gate Charge [nC]
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www.fairchildsemi.com
4 FDP10N60NZ / FDPF10N60NZ Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
-FDP10N60NZ -FDPF10N60NZ
Figure 11. Maximum Drain Current vs.
Case Temperature
-100 -50 0 50 100 150
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. V
GS
= 0V
2. I
D
= 250A


B
V
D
S
S
,

[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150
0.25
0.5
1.0
1.5
2.0
2.5
2.75
*Notes:
1. V
GS
= 10V
2. I
D
= 5A


R
D
S
(
o
n
)
,

[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
0.1 1 10 100 1000 3000
0.01
0.1
1
10
100
30s


100s
1ms
10ms
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
1 10 100 1000 3000
0.01
0.1
1
10
100
30s


100s
1ms
10ms
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
2
4
6
8
10


I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [
o
C]
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www.fairchildsemi.com
5 FDP10N60NZ / FDPF10N60NZ Rev. A
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
0.001
0.01
0.1
1
5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
uJC
(t) = 3.3
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
uJC
(t)
0.5
Single pulse


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

[
Z
u
J
C
]
Rectangular Pulse Duration [sec]
Typical Performance Characteristics (Continued)


Figure 12. Transient Thermal Response Curve
-FDP10N60NZ
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
0.005
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02 *Notes:
1. Z
uJC
(t) = 0.68
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
uJC
(t)
0.5
Single pulse


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

[
Z
u
J
C
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2


Figure 13. Transient Thermal Response Curve
-FDPF10N60NZ
t
1
P
DM
t
2
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www.fairchildsemi.com
6 FDP10N60NZ / FDPF10N60NZ Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
F
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7 FDP10N60NZ / FDPF10N60NZ Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
-------------------------- D =
Gate Pulse Width
Gate Pulse Period
--------------------------
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www.fairchildsemi.com 8 FDP10N60NZ / FDPF10N60NZ Rev. A
Mechanical Dimensions
TO-220
F
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www.fairchildsemi.com 9 FDP10N60NZ / FDPF10N60NZ Rev. A
Package Dimensions
Dimensions in Millimeters
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
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www.fairchildsemi.com 10 10 FDP10N60NZ / FDPF10N60NZ Rev. A
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED

Dual Cool
EcoSPARK

EfficentMax
ESBC
Fairchild

Fairchild Semiconductor

FACT Quiet Series

FACT

FAST

FastvCore
FETBench
FlashWriter

*
FPS
F-PFS
FRFET

Global Power Resource

SM
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
Motion-SPM
OptiHiT
OPTOLOGIC

OPTOPLANAR

PDP SPM
Power-SPM
PowerTrench

PowerXS
Programmable Active Droop
QFET

QS
Quiet Series
RapidConfigure

Saving our world, 1mW/W/kW at a time
SignalWise
SmartMax
SMART START
SPM

STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock
*
The Power Franchise

TinyBoost
TinyBuck
TinyCalc
TinyLogic

TINYOPTO
TinyPower
TinyPWM
TinyWire
TriFault Detect
TRUECURRENT*
SerDes
UHC

Ultra FRFET
UniFET
VCX
VisualMax
XS

Datasheet Identification Product Status Definition

Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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Rev. I48