MOSFET Operation: Step by Step MOSFET Operation: Step-by-Step

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MOSFET Operation: Step by Step MOSFET Operation: Step-by-Step
The channel current is carried by inversion charge at the
semiconductor/oxide interface. This charge is controlled
b th t lt by the gate voltage
The threshold voltage V
T
defines the onset of strong
inversion in the channel
The channel current saturates at a sufficiently high drain-
source voltage.
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MOSFET Operation: Step by Step MOSFET Operation: Step-by-Step
Inthesub threshold regime thedraincurrent isasmall In the sub-threshold regime, the drain current is a small
leakage current since only a small number of electrons can
pass over the potential barrier separating the drain and the
source. This regime is called the sub-threshold regime of
operation. An increase in a gate voltage in this regime leads
to a reduction of the barrier height and, hence, to an g , ,
exponential increase of this small sub-threshold current. At
larger gate voltages, the barrier is reduced so much that
electronscanenter thechannel fromthesourceand electrons can enter the channel from the source and
effectively from the second conducting plate of the MIS
capacitor. At that point, a further increase in the gate voltage
l d i l i f h l i h
3
leads to a proportional increase of the electronic charge, q
ns
,
in the channel.
MOSFET Example MOSFET Example
Example
The electron concentration in the drain and source contact
regions of a Si MOSFET is 10
18
cm
-3
. The electron
concentration in the MOSFET channel at zero drain-to-source
biasinthesub-thresholdregimeof operationis10
9
cm
-3
4
bias in the sub threshold regime of operation is 10 cm .
Estimate the barrier height between the source and the drain.
MOSFET Example MOSFET Example
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MOSFET Sub threshold MOSFET Sub-threshold
Sub threshold characteristics of a MOSFET: Sub-threshold characteristics of a MOSFET:
exponential dependence I
D
~ exp (V
G
/kT).
Vsub.slope < 30 mV.
2
2
exp
log log
ap
S
B
V
I
nk T
I
V
I
(
| |
|
(
\ .
= = (
| |
( 1
2
2 1
g g
exp
1; 1
ap
S
B
ap ap
V
I
I
nk T
V V
for n
k T
| |
(
|
(
\ .

= =
2 1
26
B
ap ap
nk T
V V V mV A = =
V
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I-V in Sub-threshold and Above
Threshold Regimes
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MOSFET I V Curves MOSFET I-V Curves
Idealized drain Idealized drain
characteristics of a
MOSFET. For V
D
~ V
Dsat
,
the drain current remains
constant.
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Four types of MOSFETs Four types of MOSFETs
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MOSFET Physics MOSFET Physics
10
Threshold voltage
MOSFET Physics MOSFET Physics
11 Threshold voltage
MOSFET Physics MOSFET Physics
12
Current-Voltage Characteristics
MOSFET Physics MOSFET Physics
13
Current-Voltage Characteristics, Linear Regime
MOSFET Physics MOSFET Physics
14
Current-Voltage Characteristics, Saturation
MOSFET I Vs MOSFET I-Vs
Current-Voltage Current-Voltage
Characteristics
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MOSFET PSPICE Circuits MOSFET PSPICE Circuits
4.225uA -1.000V
R1
1
-1.000V
-1.000V
I
-1.000V
V1
1Vdc
4.225uA
M4
0A
-4.225uA
0A
MbreakP 4.225uA 1.010pA -650.0mV
0
0V
V2
-0.650Vdc
0
0
0
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Current-Voltage Characteristics - PSPICE