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RF manual 11th edition

Application and design manual for RF products December 2008

NXPs RF Manual makes design-in work much easier


For many years, the RF Manual has proven to be the leading RF tool in the market. Also for this 11th edition we committed ourselves to make design-in work much easier and therefore we again added several new applications. This 11th edition also features some exciting new developments and products, these include: SiGeC RF MMICs, VSAT and CATV GaAs.

You can find our new developments and products, in chapter 2 Focus applications and products: SiGeC RF MMICs, VSAT and CATV GaAs 1: We are expanding our SiGeC portfolio to meet the trends towards higher frequencies with the latest SiGeC MMICs: BGU7003, BGU7004 and BGU7005, see chapters 2.2 and 3.4.1. 2: New VSAT ICs: TFF1003HN and TFF1006HN, make 2-way communication via satellite possible, enabling high speed internet over satellite, see chapter 2.4 and 3.4.2. 3: Specially designed high-performance GaAs amplifiers for the Chinese SARFT HFC networks: CGY888C, CGD942D and CGD944C, featuring rugged construction and optimized thermally design, see chapter 2.5, 3.6.2 and 3.6.3.

Application driven This manual is designed to be a dynamic source of RF information. In keeping with this, we have added some new applications that may be of interest: antenna loop through, active antenna, satellite LNB integrated solution, remote keyless entry, tire pressure monitoring systems, walki talki and e-metering. Interactive We know that many of you appreciate the RF manuals interactive features. Simply click on a product type and you will be taken directly to the corresponding product information page on the NXP website. On these product specific web pages you can find all detailed information of the particular product, like the datasheet. Internet You can access the manual via www.nxp.com/rfmanual or just google RF manual.

RF manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 11th edition

Contents
1. Applications & recommended products______________________________________________________________ 8 1.1 Low-cost cellular phone front-end for ODM/CEM designs _ ________________________________________ 8 1.2 A 2.4 GHz front-end for WLAN, Bluetooth, DECT, ZigBee, etc. _ ________________________________ 10 1.3 Cordless Phone (Analog)______________________________________________________________________ 11 1.4 Satellite outdoor unit, low noise block (LNB) for multiple users.____________________________________ 13 1.5 Satellite outdoor unit, low noise block (LNB), integrated solution.__________________________________ 14 1.6 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16)___________________________________________________ 15 1.7 Global Positioning System (GPS)_ _______________________________________________________________ 16 1.8 TV / VCR / DVD / HDD tuning _ ________________________________________________________________ 17 1.9 Antenna loop through_ ________________________________________________________________________ 18 1.10 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) __________________________________________ 19 1.11 Active antenna_______________________________________________________________________________ 20 1.12 Walkie-talkie, RF generic front-end with a single antenna_ _________________________________________ 21 1.13 E-metering, RF generic front-end with a single antenna___________________________________________ 22 1.14 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission_ ______ 23 1.15 Tire pressure monitoring system_______________________________________________________________ 24 1.16 Digital Audio Broadcasting (DAB) ______________________________________________________________ 25 1.17 Wireless Microphone _________________________________________________________________________ 26 1.18 Wireless USB_________________________________________________________________________________ 27 1.19 CATV electrical (line extenders) ________________________________________________________________ 28 1.20 CATV optical (optical node with multiple out-ports) ______________________________________________ 29 1.21 Optical networking (SFF/SFP modules) _ ________________________________________________________ 30 2. Focus applications & products_ _____________________________________________________________________ 32 2.1 A perfect match up to 20 GHz _________________________________________________________________ 32 2.2 NXP wideband LNA MMIC BGU7003 in SiGe:C process___________________________________________ 34 2.3 Total solution for satellite LNB_________________________________________________________________ 36 2.4 VSAT, 2-way communication via satellite_ ________________________________________________________ 38 2.5 NXP CATV C-family for the Chinese SARFT standard_ ____________________________________________ 40 2.6 Upgrade to a sustainable 1-GHz CATV network _ ________________________________________________ 44 2.7 Boost RF performance and reduce system size___________________________________________________ 46 3. Product portfolio_ _________________________________________________________________________________ 48 3.1 New products________________________________________________________________________________ 48 3.2 RF diodes_ ___________________________________________________________________________________ 49 3.3 RF Bipolar transistors _________________________________________________________________________ 54 3.4 RF ICs ______________________________________________________________________________________ 57 3.5 RF MOS transistors __________________________________________________________________________ 60 3.6 RF Modules _________________________________________________________________________________ 64 3.7 Fiber-optic transceiver ICs _ __________________________________________________________________ 66 4. Design-in tools____________________________________________________________________________________ 68

NXP Semiconductors RF Manual 11th edition

5.

6.

7. 8.

4.1 S-Parameters ________________________________________________________________________________ 68 4.2 Spice models _ ______________________________________________________________________________ 68 4.3 Application notes_____________________________________________________________________________ 69 4.4 Demo boards_ _______________________________________________________________________________ 69 4.5 Samples of products in development ____________________________________________________________ 69 4.6 Samples of released products _________________________________________________________________ 69 4.7 Datasheets __________________________________________________________________________________ 69 4.8 Design-in support ____________________________________________________________________________ 69 Cross-references & replacements___________________________________________________________________ 70 5.1 Cross-references: Manufacturer types versus NXP types__________________________________________ 70 5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________ 76 Packing and packaging information_________________________________________________________________ 79 6.1 Ultra thin leadless package platform___________________________________________________________ 79 6.2 Packing quantities per package with relevant ordering code_ ____________________________________ 80 6.3 Marking codes list____________________________________________________________________________ 81 Contacts and web links____________________________________________________________________________ 83 Product index_____________________________________________________________________________________ 84

NXP Semiconductors RF Manual 11th edition

NXP Semiconductors RF Manual 11th edition

What if you could increase your network capacity for high-end services?
Look at 1-GHz CATV, chapter 2.6

1. Applications & recommended products

NXP RF Applications http://www.nxp.com/rf NXP Application notes http://www.nxp.com/all_appnotes/index.html

1.1 Low-cost cellular phone front-end for ODM/CEM designs


Application diagram

LNA

mixer

IF

antenna

Rx

buffer VCO LOW FREQUENCY CHIPSET

Tx RF detector

power driver amplifier

buffer VCO
bra504

NXP Semiconductors RF Manual 11th edition NXP Semiconductors RF Manual 10th edition 8

Recommended products
Function RF detector Product RF schottky diode Low Cd schottky Package SOT323 SOD323 SOD882 SOT666 Package SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 Package various** various** various** various** various** various** various** Package SOD523 SOD523 Package SOD523 SOD523 Package SOT343R SOT343R SOT363 SOT363 Type 1PS70SB84 1PS76SB17 1PS10SB82 1PS66SB82 Type BFG410W BFG425W BFG480W BFR520T BFR505T BFS540 Type BAP50 BAP51 BAP55 BAP63 BAP64 BAP65 BAP1321 Type BB145B BB179 Type BB198 BB199 Type BGA2001 BGA2003 BGA2011 BGA2012 Function Product Bipolar transistor Driver MMIC Function Product Package SOT343 Wideband SOT343 transistor SOT343 Amplifier* SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOT343 SOT343 SOT343 SOT363 Package SOT343R SOT343R SOT363 SOT363 SOT363 SOT363 Package SOT343 SOT343 SOT363 SOT363 SOT363 Type BFG21W BFG425W BFG480W BGA2031/1 BGA2771 BGA2776 Type BFG410W BFG425W BFG480W BGA2022 Type BGA2001 BGA2003 BGA2771 BGA2776 PRF949 BFS17W Type BFG21W BFG480W BGA2031/1 BGA2771 BGA2776

Function Mixer

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

Buffer

RF bipolar transistor

Wideband transistor

Function

Product

Function

Product MMIC Low noise amplifier Gen. purpose amplifier Wideband transistor

Antenna switch

RF diode

PIN diode

IF RF bipolar transistor Function Product Bipolar transistor MMIC

Function VCO Function VCxO Function LNA

Product Varicap diodes Product Varicap diodes Product MMIC

VCO varicap diodes

Power amplifier

Wideband transistor Amplifier* Gen. purpose wideband ampl.

VCxO varicap diodes

Low noise wideband amplifier

* = 2 stage variable gain linear amplifier ** = also available in ultra small leadless package SOD882T.

Recommended application notes


1880MHz PA driver 1880MHz PA driver 2GHz LNA 2GHz LNA 800MHz PA driver 900MHz driver 900MHz LNA 900MHz LNA CDMA cellular VCO Demoboard 900MHz LNA Demoboard for BGA2001 Demoboard for W-CDMA High IP3 MMIC LNA at 1.8 - 2.4 GHz High IP3 MMIC LNA at 900MHz Power amplifier for 1.9GHz DECT and PHS Rx mixer for 2450MHz Ultra LNAs for 900&2000MHz with high IP3 BFG21W BFG480W BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W, BFG21W BGA2022 BFG410W, BFG425W

Product highlight: BGA2771 MMIC General - purpose wideband amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. The BGA27xx series amplifier provides large bandwidth and high quality in wireless system applications.

Features } Internally matched } Wide frequency range } Very flat gain } High output power } High linearity } Unconditionally stable

NXP Semiconductors RF Manual 11th edition

1.2 A 2.4 GHz front-end for WLAN, Bluetooth, DECT, ZigBee, etc.
Application diagram

low pass lter antenna SPDT switch Tx medium power amplier

PActrl

APPLICATION CHIP SET

Rx bandpass lter LNA SPDT


bra502

Recommended products
Function SPDT switch Product RF diode PIN diode Package SOD523 SOD882T SOD882T Package Gen. purpose med. power amplifier SOT89 Type BAP51-02 BAP51LX BAP55LX Type BGA6589

Recommended application notes


2.45 Ghz T/R, RF switch Low-impedance PIN diode Demoboard 900 MHz LNA Demoboard for 900&1800 MHz Demoboard for W-CDMA BAP51-02 BAP50-05 BGA2003 BGA2001 BGA2003

Function Medium power amplifier Function LNA

Product MMIC

Product MMIC Low noise wideband amplifier

Package SOT343R SOT343R

Type BGA2003 BGA2001

Product highlight: BGA6289 MMIC medium power amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium power gain blocks provides large bandwidth and high-quality performance in 2.4GHz wireless applications.

Features } Broadband 50W gain block } 17dBm output power } Single supply voltage needed

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NXP Semiconductors RF Manual 11th edition

1.3 Cordless Phone (Analog)


Application diagram

antenna

LNA

filter

mixer

filter

buffer SPDT switch

VCO

CHIPSET

filter

PA

driver

VCO

bra910

Recommended products
Function RF Switch Product RF diode PIN Diode Package various* various* various* Package SOT23 SOT23 SOT323 SOT343 SOT343F Package SOT323 SOT143 SOT343 SOT343 SOT343 SOT363 Type BAP51 BAP63 BAP64 Type BFT25 PBR951 PRF957 BFG425W BFG424F Type PRF957 BFG540 BFG410W BFG425W BFG480W BGA2022 Function VCO Product Varicap diodes VCO varicap diodes Package SOD323 SOD523 SOD323 SOD523 Package SOT23 SOT323 SOT343 SOT343F Type BB131 BB145B BB148 BB149 Type PBR951 PRF957 BFG425W BFG424F

Function

Product RF bipolar transistor Wideband transistor

Function Driver/Buffer

Product RF bipolar transistor Wideband transistor

LNA

Function

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

Mixer

* = also available in ultra small leadless package SOD882T.

Recommended application notes


2.45 Ghz T/R, RF switch Low-impedance PIN diode BAP51-02 BAP50-05

Product highlight: BAP64xx PIN diode for RF switch Operating up to 3GHz with high-voltage handling capabilities, NXPs PIN diodes are ideal for a wide range of wireless communication application. Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options including SOD523, SOD323 and leadless SOD882T.

Features } Operate up to 3GHz } High isolation, low distortion, low insertion loss } Low forward resistance (Rd) and diode capacitance (Cd) } Ultra-small package options

NXP Semiconductors RF Manual 11th edition

11

Cordless Phone (DECT front-end)


Application diagram

(DECT in-house basestation)


Application diagram

antenna

LNA

antenna

LNA

filter

mixer

filter

buffer SPDT switch

switch

CHIPSET

VCO

CHIPSET

filter

PA

filter

PA

driver

VCO

bra911

bra910

Recommended products
Function Product Package various various various various various various Package SOT343 SOT343F SOT343F Type BAP51* BAP55* BAP142* BAP63* BAP64* BAP1321* Type BFG425W BFG424F BFU725F

Recommended products
Function Product Package various various various various various various Package SOT343 SOT343F SOT343F Package SOT343 SOT343 SOT343 SOT363 Package VCO varicap diodes SOD523 Package SOT343 SOT343F SOT343 SOT343F Type BAP51 * BAP55 * BAP142* BAP63* BAP64* BAP1321* Type BFG425W BFG424F BFU725F Type BFG410W BFG425W BFG480W BGA2022 Type BB145B Type BFG425W BFG424F BFG480W BFU725F

RF Switch

RF diode

PIN Diode

RF Switch

RF diode

PIN Diode

Function LNA

Product RF bipolar transistor RF transistor

Function LNA

Wideband transistor SiGeC transistor

Product RF bipolar transistor RF transistor

Wideband transistor SiGeC transistor

* = also available in ultra small leadless package SOD882T.

Function Mixer

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

Function VCO Function

Product Varicap diodes Product RF bipolar transistor RF transistor

Driver/Buffer

Wideband transistor SiGeC transistor

Product highlight: BFG425W NPN wideband transistor NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.

Features } Very high maximum power gain (20dB for 2GHz) } Low noise figure (1.2dB for 2GHz) } High transition frequency (25GHz) } Emitter is thermal lead } Low feedback capacitance (95fF)

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NXP Semiconductors RF Manual 11th edition

1.4 Satellite outdoor unit, low noise block (LNB) for multiple users.
Application diagram

horizontal 1st antenna stage LNA

2nd stage LNA

3rd stage LNA

H low IF amplifier low oscillator V low (4 x 2) IF SWITCH IF amplifier IF out 1

BIAS IC

IF amplifier H high

vertical antenna

IF amplifier high oscillator V high 1st stage LNA 2nd stage LNA 3rd stage LNA IF amplifier IF amplifier
brb022

IF out 2

Recommended products
Function Oscillator Function Product RF bipolar transistor Product General purpose amplifier Wideband transistor Wideband transistor Package SOT343 SOT343F Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Package various various various various various Type BFG424W BFG424F Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BFG424W BFG424F Type BAP64 * BAP51 * BAP1321 * BAP50 * BAP63 * Function Product General purpose amplifier Wideband transistor Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 Package SiGeC transistor SOT343F Package Bias IC TSSOP16 Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BFG325 Type BFU725F Type UAF4000TS

Output stage IF amplifier

MMIC

1st stage IF amplifier

MMIC

RF bipolar transistor Function 3rd stage LNA Function BIAS IC Product RF transistor Product

RF bipolar transistor Function Product

IF switch

RF diode

PIN diode

* = also available in ultra small leadless package SOD882T.

Recommended application notes


2.45 Ghz T/R, RF switch Low-impedance PIN diode BAP51-02 BAP50-05

Product highlight: BFG424F bipolar oscillator The BFG424F is an NPN double polysilicon wideband transistor with a buried layer for low-voltage applications. Housed in an easy-to-use SOT343F package, it features very high gain, stable phase noise & low feedback capacitance.

Features } Stable phase noise over temperature performance } Compact flat-lead SOT343F package simplifies assembly } Free oscillations at all LO frequencies

NXP Semiconductors RF Manual 11th edition

13

1.5 Satellite outdoor unit, low noise block (LNB), integrated solution.
Application diagram
UAF3000
SUPPLY & BAND/POLARIZATION SWITCHING 3.3 V REGULATOR

horizontal 1st STAGE LNA

LO_SEL VCC

TFF1004

vertical

BFU725F
1st STAGE LNA 2nd STAGE LNA

image reject PLL

IF gain

Recommended products
Function Downconverter Product Satellite LNB RF IC Satellite LNB downconverter IC Package SOT616

9.75/10.6 GHz

brb010

Type TFF1004HN

Function Supply & band/polarization switching Function 2nd stage LNA

Product Satellite LNB RF IC Satellite LNB biasing IC

Package SOT360

Type UAF3000TS

Product RF transistor SiGeC transistor

Package SOT343F

Type BFU725F

Complete LNB chipset The chipset consists of the TFF1004HN, the UAF3000TS, and the BFU725F. TFF1004HN is a highly integrated IC that includes an LNA, a mixer, a down-converter, a PLL, a crystal oscillator, and an IF buffer. It is manufactured in NXPs breakthrough SiGe BiCMOS process for microwave applications, which is more costeffective than GaAs processes and more reliable than discrete implementations. The UAF3000TS is a FET bias controller with a polarization switch and tone detection. It provides biasing for up to three LNA devices. An integrated bandgap reference ensures the accuracy of voltage and tone detection, also over temperature. For horizontal and vertical switching, there is an integrated supply-voltage detector, and for switching between high and low bands, there is a 22-kHz tone detector. The supply voltage range, 3.3 V or 5 V, is detected automatically. The BFU725F is an NPN microwave transistor for high-speed, low-noise applications. In the LNB chipset, it is used for the second LNA stage. It is manufactured in a 110-GHz fT-SiGeC technology, so it delivers an excellent noise figure (1.0 dB at 12 GHz), and a high maximum stable gain (13 dB at 12 GHz). More information in chapter 2.1.

Product highlight: TFF1004HN The TFF1004HN is an integrated mixer oscillator downconverter for use in Low Noise Block (LNB), in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.

Features: } Pre-amplifier, mixer, buffer amplifier and PLL synthesizer in one IC } Alignment-free concept } Crystal controlled LO frequency generation } Low phase noise } Switched LO frequency (9.75 GHz and 10.6 GHz) } Low spurious

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NXP Semiconductors RF Manual 11th edition

1.6 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16)


Application diagram

input terrestrial amplifier input terrestrial input amplifiers LNB satellite dishe(s)

output amplifiers coax out to STB SWITCH MATRIX FOR 4 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB
brb023

Recommended products
Function Input amplifier terrestrial Product General purpose medium power amplifier Package Type BGA6289 SOT89 BGA6489 BGA6589 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 Package Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 Type BAP50* BAP51* BAP63* BAP64* BAP70* BAP1321* Output amplifier MMIC Function Product General purpose medium power amplifier General purpose amplifier Wideband transistor Package Type BGA6289 SOT89 BGA6489 BGA6589 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 BGM1011 BGM1013 BGM1014 BFG135 BFG 591 BFG198 BFG540

MMIC

Function

Product MMIC General purpose amplifier Wideband transistor

Input amplifier LNB

RF bipolar transistor

RF bipolar transistor

Function

Product

Switch matrix

RF diode

PIN diode

Various

* = also available in ultra small leadless package SOD882T.

Product highlight: PIN diodes for switching matrix Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options including SOD523, SOD323 and leadless SOD882T.

Features } High isolation, low distortion, low insertion loss } Low forward resistance (Rd) and diode capacitance (Cd) } Ultra-small package options

NXP Semiconductors RF Manual 11th edition

15

1.7 Global Positioning System (GPS)


Application diagram

PA

mixer GSM

15 dB isolation

LNA GPS FE
brb201

Recommended products
Function Product RF bipolar transistor Wideband transistor Low noise wideband amplifier General purpose wideband amplifier SiGeC MMIC RF transistor SiGeC transistor Package SOT343 SOT343 SOT343R SOT343R SOT363 SOT363 SOT363 SOT363 SOT891 SOT886 SOT886 SOT343F Type BFG425W BFG410W BGA2001 BGA2003 BGM1013 BGM1011 BGA2715 BGA2748 BGU7003 BGU7004 BGU7005 BFU725F

LNA

MMIC

Recommended application notes


Introduction into the GPS front-end 900 MHz LNA 2 GHz LNA 2 GHz high IP3 LNA BGAx, BGMx, BGUx BFG410W BFG410W BGA2003

Product highlight: BFU725F SiGeC microwave NPN transistor Meet the trend towards higher frequencies. The BFU725F provides high switching frequencies plus extreme high gain and low noise.

Features } Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) } High switching frequency (fT >100 GHz / fMAX >150 GHz) } Plastic surface-mount SOT343F package Benefits } SiGeC process delivers high switching frequency from a silicon-based device } Cost-effective alternative to GaAs devices } RoHS compliant

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NXP Semiconductors RF Manual 11th edition

1.8 TV / VCR / DVD / HDD tuning


Application diagram

antenna

input filter

RF preamplifier

bandpass filters

mixer

IF amplifier IF out

oscillator

bra500

Recommended products
Function Product VHF low Package SOD323 SOD523 SOD882T SOD323 SOD523 SOD523 SOD882T SOD882T SOD323 SOD882T SOD523 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT666 Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 Type BF904 BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1206F Function Product VHF low Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 Package Wideband amplifier SOT363 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 Type BGA2717

Input filter

Varicap diode

VHF high

Bandpass filter

Varicap diode

VHF high

UHF

UHF

Function

Product

Function

Product VHF low

5V

Oscillator

Varicap diode

VHF high

9V RF pre-amplifier MOSFET

UHF

Function IF amplifier

Product MMIC

2-in-1 @ 5 V

2-in-1 @ 3 V

Product highlight: BF1206F dual gate mosfet double amplifier specified for low power applications. The device consists of two dual gate mosfet amplifiers in a small SOT666 flatlead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3Volts and draincurrents of 4mA.

Features } Low power specified } Two amplifiers in one small SOT666 package } Shared gate 2 and Source leads } Each amplifier is biased by an external bias resistor } E xcellent noise and crossmodulation performance

NXP Semiconductors RF Manual 11th edition

17

1.9 Antenna loop through

RF in

filter

LNA

DVD-R, HDD-R, VCR, DVR

RF switch

BF1108
TV RF out to TV
LNA

brb196

Recommended products
Function RF switch Product MOSFET Silicon RF switch Package SOT23 SOT143B SOT143R Function LNA Product RF bipolar transistor Wideband transistor Package SOT143 SOT143 SOT89 Type BF1107 BF1108 BF1108R Type BFG520 BFG540 BFQ540

Using the BF1108 as a RF switch saves considerable use of energy. The recording device (DVD-R, HDD-R, VCR, DVR) can be powered off but people can remain watching TV, although the antenna is looped via the recording device. Without using a BF1108 the antenna signal is lost. How does it work ? At the moment the power of the recording device is on, the BF1108 is open, so the RF signal travels via the recording device to the TV tuner. At the moment the power of the recording device is completely off, the BF1108 closes. This ensures that the RF signal is looped through directly to the TV tuner. TV reception is guaranteed.

Product highlight: BF1108 silicon RF switch, Mosfet This switch is a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B package. The low loss and high isolation capabilities of this device provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.

Features: } Specially designed for low loss RF switching up to 1 GHz } Easy to design-in } Power ON: low losses } Power OFF: high isolation } ON or OFF, ZERO power consumption

18

NXP Semiconductors RF Manual 11th edition

1.10 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)


Application diagram

FM input filter & AGC

1st mixer

IF bandpass filter

2nd mixer

variable BW filter

IF limiter FM deamplifier modulator f V FM MPX

AGC & hum filter AM LNA

oscillator

oscillator

DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator

AM audio

bra501

Recommended products
Function AM LNA Function FM input filter & AGC
* = OIRT

Product RF transistor Product RF diode

JFET

Package SOT23 Package SOT23 SOT23 SOD523 SOD323

Type BF862 Type BB201* BB207 BAP70-02 BAP70-03

Function AGC & hum filter Function Oscillator

Product RF diode Product RF diode Varicap diode PIN diode

Package SOT363 Package SOD323 SOD523

Type BAP70AM Type BB156 BB208-02

Varicap diode PIN diode

Note 1: All these recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All these recommended discrete products are applicable excluding AM LNA in: DICE2:TEF6730HWCE.

Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator.

Recommended application notes


Low-voltage FM stereo radio (TEA5767/68) A NICE radio (TEA6848H) Integrated Car Radio CCC (TEF69xxx) BB202 JFETS,Varicaps and PIN diodes JFETS,Varicaps and PIN diodes

Product highlight: BF862 Junction Field Effect Transistor Our Tuning component portfolio contains excellent products for car radio reception applications, playing a vital role for in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design in. Performance is demonstrated in reference designs. High performance Junction Fet BF862, specially designed for car radio AM amplifiers.

Features } High transition frequency and optimized input capacitance for excellent sensitivity } High transfer admittance resulting in high gain } Encapsulated in the versatile and easy to use SOT23 package

NXP Semiconductors RF Manual 11th edition

19

1.11 Active antenna


Application diagram

antenna 1st stage LNA 2nd stage LNA 3rd stage LNA

CHIPSET
brb215

Recommended products
Function 1st stage LNA Function 2nd stage LNA Product MMIC Low noise wideband amplifier Package SOT343R SOT343R Package SOT363 SOT363 SOT363 SOT363 Package SOT343F SOT891 Type BGA2001 BGA2003 Type BGM1013 BGM1011 BGA2715 BGA2748 Type BFU725F BGU7003

Product MMIC General purpose wideband amplifier

Function 3rd stage LNA

Product RF transistor MMIC

SiGeC transistor SiGeC MMIC

Product highlight: BGU7003 SiGeC MMIC Manufactured in NXPs latest SiGeC process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.

Features: } Low-noise, high-gain microwave MMIC } Maximum stable gain =19 dB at 1.575 GHz } 110-GHz fT-Silicon Germanium technology } Optimized performance at low (5-mA) supply current } Extemely thin, leadless 6-pin SOT891 package } Integrated biasing and shutdown for easy integration

20

NXP Semiconductors RF Manual 11th edition

1.12 Walkie-talkie, RF generic front-end with a single antenna


Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch LOW FREQUENCY CHIP SET

VCO

filter

PA

driver

VCO

bra850

Recommended products
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product RF bipolar transistor MMIC Function Product RF bipolar transistor MMIC Package SOD523 SOD323 various various Type BA277 BA591 BAP51* BAP1321* Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Gen. purpose SOT89 wideband ampl. Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 Type BB198 BB156

LNA

Package SOT23 Wideband SOT323 transistor SOT323 Low noise SOT343R wideband ampl. SOT343R Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363

Function Power amplifier Function VCO

Product MMIC

Driver

Product Varicap diodes

VCO varicap diodes

* = also available in ultra small leadless package SOD882T

Product highlight: PRF957 silicon NPN UHF wideband transistor Silicon NPN UHF wideband transistor in a surface mount 3-pin SOT323 package is primarily intended for wideband applications in the RF front end. The transistor is widely built as LNA, power amplifier, driver and buffer in the UHF band application.

Features } Small 3-pin plastic surface mounted package } Low noise (1.3dB at 1GHz) and high power gain (15dB at 1GHz) } Gold metallization ensures excellent reliability

NXP Semiconductors RF Manual 11th edition

21

1.13 E-metering, RF generic front-end with a single antenna


Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch E-METERING CHIP SET

VCO

filter

MPA

driver

VCO

bra850

Recommended products
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product RF bipolar transistor MMIC Function Product RF bipolar transistor MMIC Package SOD523 SOD323 various various Type BA277 BA591 BAP51* BAP1321* Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Gen. purpose wideband ampl. SOT89 SOT505 SOT762 Function VCO Product Varicap diodes Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 BGA7027 BGA7127 Type BB198 BB156

LNA

Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Wideband transistor Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363

Function Medium power amplifier

Product

Driver

MMIC

* = also available in ultra small leadless package SOD882T.

VCO varicap diodes

Product highlight: BGA7x27 MMIC medium power amplifier The BGA7x27 MMIC is a one-stage driver amplifier, offered in a low-cost leaded (BGA7027) or leadless (BGA7127) surface-mount package. It delivers 27dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.

Features } 40 MHz to 2700 MHz frequency operating range } 16 dB small signal gain at 2 GHz } 27 dBm output power at 1 dB gain compression } Integrated active biasing } 3.3 V / 5 V single supply operation } Simple quiescent current adjustment } 1 A shutdown mode

22

NXP Semiconductors RF Manual 11th edition

1.14 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram

antenna receiver filter LNA filter mixer

LOW FREQUENCY CHIP SET buffer

VCO antenna transmitter filter PA driver VCO

LOW FREQUENCY CHIP SET


bra851

Recommended products
Function Product RF bipolar transistor MMIC Function Product RF bipolar transistor MMIC Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Wideband transistor Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOD323 SOD323 SOD523 SOD323 Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package SOT323 SOT23 SOT363 SOT363 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776

LNA

Driver

Function Power amplifier

Function VCO

Product Varicap diodes VCO varicap diodes

Product RF bipolar transistor MMIC

Wideband transistor Amplifier Gen. purpose wideband ampl.

Product highlight: NXP varicap diodes for VCO Varicap diodes are principally used as voltage varicap capacitors with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCO) in ISM band applications.

Features } E xcellent linearity } E xcellent matching } Very low series resistance } High capacitance ratio

NXP Semiconductors RF Manual 11th edition

23

1.15 Tire pressure monitoring system


Application diagram

antenna filter PA driver VCO

SENSOR
brb216

Recommended products
Function PA Product RF bipolar transistor Wideband transistor Package SOT23 SOT323 SOT323 Type BFR92A BFR92AW BFR93AW Package SOT323 SOT23 SOT363 SOT363 SOT363 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776

Function

Product RF bipolar transistortransistor Wideband transistortransistor Amplifier MMIC Gen. pupose wideband ampl.

Driver

Function VCO

Product Varicap diodes VCO varicap diodes

Package SOD523 SOD323

Type BB198 BB156

Product highlight: BFR92AW silicon NPN transistor It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. This silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

Features: } High power gain } Gold metallization ensures excellent reliability } SOT323 (S-mini) package

24

NXP Semiconductors RF Manual 11th edition

1.16 Digital Audio Broadcasting (DAB)


Application diagram

antenna filter LNA mixer filter CHIPSET

oscillator

bra913

Recommended products
Function Frequency Product RF bipolar transistor RF transistor Wideband transistor JFET Package SOT23 SOT323 SOT23 SOT143 SOT143R SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT343F SOT343 SOT343 SOT343R SOT343R SOT363 SOT363 SOT363 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Type BB149 Type BFS17 BFS17W BF862 BF904 BF904R BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 BFU725F BFG425W BFG410W BGA2001 BGA2003 BGM1013 BGM1011 BGA2715 BGA2748

VHF band Mosfet

5V

LNA RF transistor RF bipolar transistor S-band/ L-band MMIC

9V SiGeC transistor Wideband transistor Low noise wideband amplifier General purpose wideband amplifier Package SOT343 SOT343 SOT343 SOT363 Package VCO varicap diodes SOD323

Function Mixer

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

Function VCO

Product Varicap diodes

Suitable frequencies for DAB identified on VHF band, L-band and S-band: VHF band I: 47 - 68 MHz VHF band III: 174 - 240 MHz L-band: 1452 - 1467.5 MHz S-band: 2310 - 2360 MHz

Product highlight: BFG410W NPN wideband transistor NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.

Features } Very high power gain (18dB at 2GHz) } Low noise figure (1.2dB at 2GHz) } High transition frequency (22GHz) } Emitter is thermal lead } Low feedback capacitance (45fF)

NXP Semiconductors RF Manual 11th edition

25

1.17 Wireless Microphone


Application diagram

antenna PA driver VCO IC

bra912

Recommended products
Function Product Package SOT23 SOT323 SOT23 SOT323 SOT343 SOT343 SOT343 Package SOD523 SOD323 Type BFT93 BFT93W PBR951 PRF957 BFG21W BFG425W BFG480W Type BB145B BB149

PA/Driver

RF bipolar transistor

Wideband transistor

Function VCO

Product Varicap diodes

VCO varicap diodes

Operation frequency: 70M - 72 M 150 MHz - 270 MHz 470 MHz - 1000 MHz 2400 MHz

Product highlight: BFG480W NPN wideband transistor NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343 package.

Features } High power gain } Low noise figure } High efficiency } High transition frequency } Emitter is thermal lead } Low feedback capacitance } Linear and non-linear operation

26

NXP Semiconductors RF Manual 11th edition

1.18 Wireless USB


Application diagram

antenna

band pass

LNA

SPDT switch PA band pass

CHIPSET

brb024

Recommended products
Function LNA Function Product RF transistor Product SiGeC transistor Package SOT343F Package various various various various various various Type BFU725F Type BAP51* BAP63* BAP64* BAP55LX* BAP142LX* BAP1321*

SPDT Switch

RF diode

PIN diode

* = also available in ultra small leadless package SOD882T.

Product highlight: BFU725F SiGeC microwave NPN transistor Meet the trend towards higher frequencies. The BFU725F provides high switching frequencies plus extreme high gain and low noise. Features } Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) } High switching frequency (fT >100 GHz / fMAX >150 GHz) } Plastic surface-mount SOT343F package

Benefits } SiGeC process delivers high switching frequency from a siliconbased device } Cost-effective alternative to GaAs devices } RoHS compliant

NXP Semiconductors RF Manual 11th edition

27

1.19 CATV electrical (line extenders)


Application diagram

duplex filter coax in

RF preamplifier

RF power amplifier

duplex filter coax out

RF reverse amplifier

bra505

Recommended products
Function Product Frequency 550MHz 600MHz RF pre-amplifier 750MHz Gain (dB) 33.5 - 35.5 33.5 - 35.5 26.2 - 27.8 21 - 22 33.5 - 35.2 33.5 - 34.5 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGE788 BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A Function Product Frequency 550MHz 750MHz Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 -19 18.2 18.8 19.7 20.3 19.25 - 19.75 20.5 - 22.5 23 - 25 20.5 - 22.5 20.5 - 22.5 22.5 - 24.5 22.5 - 24.5 Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD923 CGD942C CGD944C CGD1042 CGD1042H CGD1044 CGD1044H

Push-Pulls

RF power amplifier

Power doublers

870MHz

870MHz 1000MHz

1000MHz

Function RF reverse amplifier

Product Reverse hybrids

Frequency 5-75 MHz 5-120 MHz 5-200 MHz

Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5

Type BGY68 BGY66B BGY67A

All available in SOT115 package.

Recommended application notes


BGS67A high-dynamic-range hybrid ampl. reverse ampl. 2-way CATV systems A hybrid wideband amplifier module for digital CATV networks with BGD902 BGS67A BGD902

Product highlight: CGD1044H CGD1044H with high-output power is primarily designed for use in fiber deep-optical-node applications (N+0/1/2). This 1GHz solution offers an extended temperature range, high power overstress capabilities and high ESD levels resulting in a low cost of ownership. Its designed for durability and offering superior ruggedness.

Features } High-output power } E xcellent linearity, stability, and reliability } High power gain } E xtremely low noise } Silicon Nitride passivity } GaAs HFET dies for high-end applications

28

NXP Semiconductors RF Manual 11th edition

1.20 CATV optical (optical node with multiple out-ports)


Application diagram

RF power amplifier

duplex filter coax out port 1

RF forward receiver fiber in

RF preamplifier

splitter

coax out port 2

coax out port 3

coax out port 4


bra852

Recommended products
Function RF forward receiver Function RF pre-amplifier Function RF power amplifier Product Forward path receiver Product Push-Pulls Power doubler Product Power doublers Frequency 870MHz Package SOT115 SOT115 SOT115 Gain (dB) 18 - 19 21 - 22 18.2 - 18.8 Gain (dB) 20.5 - 22.5 23 - 25 Type BGO807 BGO807C BGO827 Type BGY885A BGY887 BGD812 Type CGD942C CGD944C

Frequency 870MHz 870MHz Frequency 870MHz

Recommended application notes


Using a Philips optical receiver in CATV applications All optical receivers

Product highlight: BGO807C BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit.

Features } E xcellent linearity } Low noise } E xcellent flatness } Standard CATV outline } Rugged construction } Gold metallization ensures excellent reliability } High optical input power range

NXP Semiconductors RF Manual 11th edition

29

1.21 Optical networking (SFF/SFP modules)


Application diagram

PIN diode fiber in

RF preamplifier

RF power amplifier Rx data out module controller

fiber out laser laser driver

Tx data in

bra507

Recommended products
Function RF pre-amplifier Product Trans impedance amplifier Data rate (Mb/s) 155 622 1200 2488 Package die only die only die only die only Type TZA3036 TZA3026 TZA3046 TZA3013

Recommended application notes


OM5811 demo boards supporting TZA47 laser TZA47 drivers for 30-3200 Mb/s TZA30x6 Receiver Optical Sub-Assembly TZA30x6

Product highlight TZA3046 TZA3046 transimpedance preamplifier brings high receiver sensitivity, wide dynamic range, and low power dissipation to Receiver Optical Sub Assemblies (ROSA). TZA3046 is optimized for Fibre Channel transmission systems and is equipped with a SFF8472compliant output of average photo current for RSSI monitoring. A clear bonding layout and identical ports on both side of the die make assembly easy.

Features } High receiver sensitivity, low equivalent input noise } E xceptionally wide bandwidth } On-chip AGC with options for external control } Input overload up to 1.5 mA pp } Differential outputs } Bias voltage for PIN diode } Single 3.3-V supply voltage (range: 2.9 to 3.6 V)

30

NXP Semiconductors RF Manual 11th edition

What if you could get a cost effective RF transistor up to 20 GHz?


Look at BFU725F, chapter 2.1

2. Focus applications & products


NXP RF applications: http://www.nxp.com/rf

2.1 A perfect match up to 20 GHz SiGeC microwave NPN transistor BFU725F


Meet the trend towards higher frequencies. With NXP Semiconductors latest SiGeC microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. Its the ideal solution for applications up to 20 GHz.
The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise figure, its perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency, its your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. Features  Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) High switching frequency (fT >100 GHz / fMAX >150 GHz) Plastic surface-mount SOT343F package Benefits SiGeC process delivers high switching frequency from a silicon-based device Cost-effective alternative to GaAs devices RoHS compliant Applications GPS systems DECT phones Low noise amplifier (LNA) for microwave communications systems 2nd stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs) Satellite radio WLAN and CDMA applications Low-noise microwave applications The BFU725F get its outstanding performance from our innovative silicon-germanium-carbon (SiGeC) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. In addition, with the BFU725F, you dont need a biasing IC or negative biasing voltage. So its a much more cost-effective solution than GaAs pHEMT devices.

32

NXP Semiconductors RF Manual 11th edition

Quick reference data


Parameter Collector-emitter breakdown voltage Maximum collector current Transition frequency Noise figure Symbol BVCEO I C(max) fT NF Conditions I C = 1 mA; I B = 0 VCE = 2 V; I C = 25 mA; f = 2 GHz VCE = 2 V; I C = 5 mA; f = 1.8 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 2.4 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 5.8 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 12 GHz; s = opt VCE = 2 V; I C = 25 mA; f = 1.8 GHz VCE = 2 V; I C = 25 mA; f = 2.4 GHz VCE = 2 V; I C = 25 mA; f = 5.8 GHz VCE = 2 V; I C = 25 mA; f = 12 GHz Value 3.2 V 40 mA 68 GHz 0.4 dB 0.45 dB 0.7 dB 1.0 dB 26.6 dB 25.5 dB 17 dB 13 dB

Maximum stable power gain


1

MSG / G P(max)

Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W.

80 fT (GHz) 60

bra856

40 gain (dB) 30 MSG

bra857

40

20

GMAX S21 MSG

20

10

10

20

IC (mA)

30

12

16

f (GHz)

20

Transition frequency as a function of collector current (typical values)

Gain as a function of frequency (typical values)

NXP Semiconductors RF Manual 11th edition

33

2.2 NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies
Manufactured in NXPs latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.
The BGU7003 is designed for high-speed, low-noise mobile applications. In GPS units, for example, it delivers high-quality reception with maximum battery life. That means consumers always know where they are, and can receive continuous directions, between high rises and under heavy overcast skies. It also means having a GPS device that can run for days, instead of hours. The BGU7003 gets its outstanding performance from NXPs innovative silicon-germanium-carbon (SiGe:C) BiCMOS process, called QUBiC4X. This groundbreaking process technology was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. The BGU7003 is designed for high-speed, low-noise mobile applications. In GPS units, for example, it delivers high-quality reception with maximum battery life. That means consumers always know where they are, and can receive continuous directions, between high rises and under heavy overcast skies. It also means having a GPS device that can run for days, instead of hours. The BGU7003 gets its outstanding performance from NXPs innovative silicon-germanium-carbon (SiGe:C) BiCMOS process, called QUBiC4X. This groundbreaking process technology was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process.

Key features Low-noise, high-gain microwave MMIC Minimum noise figure is 0.85 dB at 1.575 GHz Maximum stable gain =20 dB at 1.575 GHz 110-GHz fT-Silicon Germanium Carbon technology Optimized performance at low (5-mA) supply current ESD protection > 1kV Human Body Model on all pins Extemely thin, leadless 6-pin SOT891 package Key benefits Integrated biasing and shutdown for easy integration Power-down mode consumes less than 1 A Temperature-stabilized bias Applications GPS E-metering WLAN and CDMA wireless communication Satellite radio Analog/digital cordless applications (DECT) Microwave communications systems

34

NXP Semiconductors RF Manual 11th edition

The BGU7003 includes an integrated bias generator that simplifies the application and makes design-in easier. Biasing is done away from the RF input line, and the device offers the same full flexibility as the working range of the NXP BFU725F. The bias adapts over temperature to ensure the gain is well controlled. There is no matching on the die, and no limit to the application area.

As the latest member of NXPs growing SiGe:C portfolio, the BGU7003 joins the highly successful BFU725F device. It is available in a demo board that lets the designer evaluate noise figures, gain, input and output reflection coefficients, and reverse isolation.

C3

Rb BIAS AND ENABLE IN

Vcc
Rb L3 R1

V_cc

EN
RF_in

input matching
L1 C1

1 2 6 4
optional L4 C2

BGU7003
5 3

RF_out

L2 optional

GND

OUT
optional C4

V_en

brb199

brb198

BGU7003 circuit

BGU7003 demo board

Symbol VCC ICC Gp(max) NF PL(1dB) IP3O

Parameter supply voltage supply current maximum power gain noise figure output power at 1dB gain compression output third-orderintercept point

Conditions RF input AC coupled 3,3 VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz; Tamb=25 C (1) VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz;
S

Typ 2.5 5 19 0.85 8 18

Unit V mA dB dB dBm dBm

opt

VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25C VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25C

NXP Semiconductors RF Manual 11th edition

35

2.3 Total solution for satellite LNB Create a Ku-band DVB-S LNB for less, with higher reliability NXP fully integrated down converter (PLL synthesizer/mixer/amplifier) TFF1004HN for satellite LNB
The TFF1004HN is an integrated downconverter for use in Low Noise Block (LNB) converters in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. This alignment-free concept replaces current solutions that require components such as GaAs mixer and DRO. As part of our LNB chipset, it enables a Ku-band satellite receiver that lowers total cost of ownership and guarantees the stability of the local oscillator.
It is manufactured in NXPs breakthrough SiGe BiCMOS process for microwave applications, which is more costeffective than GaAs processes and more reliable than discrete implementations. To comply with Asian and European DVB-S standards, the TFF1004HN supports RF input frequencies between 10.7 and 12.75 GHz, and uses a selectable LO that operates at 9.75 or 10.6 GHz. It is housed in a small HVQFN24 package that measures only 4 x 4 x 0.85 mm, and is designed to work as part of a complete chipset that provides a total LNB solution. Complete LNB chipset The chipset consists of the TFF1004HN, the UAF3000TS, and the BFU725F. The UAF3000TS is a FET bias controller with a polarization switch and tone detection. It provides biasing for up to three LNA devices. An integrated bandgap reference ensures the accuracy of voltage and tone detection, also over temperature. For horizontal and vertical switching, there is an integrated supply-voltage detector, and for switching between high and low bands, there is a 22-kHz tone detector. The supply voltage range, 3.3 V or 5 V, is detected automatically. The BFU725F is an NPN microwave transistor for high-speed, low-noise applications. In the LNB chipset, it is used for the second LNA stage. It is manufactured in a 110-GHz fT-SiGeC technology, so it delivers an excellent noise figure (1.0 dB at 12 GHz), and a high maximum stable gain (13 dB at 12 GHz).

Features  4 Pre-amplifier, mixer, buffer amplifier, and PLL synthesizer in one IC  State-of-the-art SiGe BiCMOS process  Alignment-free concept  LO frequency with XTAL control  Low phase noise  Switched LO frequency: 9.75 and 10.6 GHz  Low spurious  HVQFN24 package (4 x 4 x 0.85 mm)  Part of complete LNB chipset: - NXP UAF3000TS for supply and band/polarization switching - NXP BFU725F for 2nd LNA stage  Demo board available Application  4 Ku-band DVB-S receiver Designed for use in the Low Noise Block (LNB) of a Ku-band satellite receiver for Asian and European standards, the NXP TFF1004HN is a highly integrated IC that includes an LNA, a mixer, a down-converter, a PLL, a crystal oscillator, and an IF buffer.
36 NXP Semiconductors RF Manual 11th edition

UAF3000
SUPPLY & BAND/POLARIZATION SWITCHING 3.3 V REGULATOR

horizontal 1st STAGE LNA

LO_SEL VCC

TFF1004

vertical

BFU725F
1st STAGE LNA 2nd STAGE LNA

image reject PLL

IF gain

9.75/10.6 GHz

brb010

LNB application with TFF1004HN, UAF3000TS, and BFU725F

TFF1004HN demo board

TFF1004HN

Input frequency range (GHz) 10.7 to 12.75 Typ. collector current IC(max) (mA)

Conversion gain Gc (dB) 32 Transition frequency fT (GHz) 68 Drain voltage VD (V) 2

Noise figure NF (dB) 9 Noise figure NF (dB) @ 12 GHz 1.0 Drain current IDO (mA) 10

Output IP3 IP3(out) (dB) 10 Max. stable power gain MSG/GP(max) (dB) @ 12 GHz 13 Supply current ICC (mA) 6

Switched LO frequency (GHz) 9.75 / 10.6 Collector-emitter breakdown voltage BVCEO (V) 3.2 Polarization detection voltage VPOL (V) 14.75

BFU725F

8 Supply voltage VCC (V)

UAF3000TS

3.3 or 5

NXP Semiconductors RF Manual 11th edition

37

2.4 VSAT, 2-way communication via satellite Design a Ku-band VSAT transmitter or transceiver that meets IESS-308 NXP Ku-band RF PLL TFF1003HN for VSAT
The TFF1003HN is a Ku-band RF PLL intended for low phase-noise Local Oscillator (LO) circuits in Ku-band VSAT transmitters and transceivers. Manufactured in a high-performance SiGeC process, it delivers extremely low phase noise at 13.05 GHz from a 10-MHz reference, and complies with the IESS-308 from Intelsat.

VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a Low Noise Block (LNB) for receiving the downlink signals, and a Block Up Converter (BUC). The TFF1003HN can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). In Ku-band applications, the LO frequency is either 13.05 GHz for standard range or 12.8 GHz for extended range. To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequency locked to the reference. The TFF300HN is housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P) and OUT-N) have been reserved to match a typical layout using a linewidth of Z=50 microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC.

Features Phase noise compliant with IESS-308 (Intelsat) LO generator with VCO range from 12.8 to 13.05 GHz Input signal from 50 to 815 MHz Differential input and output Divider settings at 16, 32, 64, 128 or 256 Lock-detect output SiGeC technology (120-GHz fT process) HVQFN24 (SOT616-1) package Applications VSAT up-converters Local oscillator signal generation

38

NXP Semiconductors RF Manual 11th edition

Satellite

VSATs

HUB

Typical VSAT network

mixer synchronized QPSK data on L band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz) from indoor unit 10 MHz

band pass filter

solid state power amp

13.05 GHz settings (12.8 GHz settings) /64 (/48) 156.25 kHz (203.33 kHz) PFD

203.90625 (200) MHz LF PFD LF

12.8~13.05 on-chip VCO

amp

band pass filter /1305 (/960)

/64 TFF1003HN 203.90625 (200) MHz > 13.05 (12.8) GHz TFF1003 @ DIV = 64 PLL with on-chip VCO

clean up PLL build around VCXO narrow bandwidth

brb200

Complete LO generator for linear BUC with TFF1003HN

Type TFF1003HN *

Input frequency range (MHz) 50 to 815

Supply voltage (V) 3.0 to 3.6

Supply current (mA) 200

Phase noise (dBc/Hz) -138 with 10-MHz reference signal

Spurious noise (dBc) -70

Output power (dBm) -7 to -3

* As designed into complete BUC LO generator

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2.5 NXP CATV C-family for the Chinese SARFT standard Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of Chinas Connecting every village program and powerful enough for upgrading major cities from analog to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover most HFC applications in the 550 - 870 MHz range.
Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures. The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing by design the best ESD protection levels with no needs for external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a see-through cap that makes it easy to distinguish them from counterfeit products.

Products BGY588C, BGE788C and CGY888C push-pull amplifiers BGD712C, CGD944C and CGD942C power doublers BGO807C optical receiver Features Excellent linearity, stability and reliability High power gain Extremely low noise Silicon Nitride passivity GaAs HFET dies for high end devices Benefits Compliant with Chinese SARFT HFC networks standard Transparent cap allows confirmation of product authenticity Rugged construction

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NXP Semiconductors RF Manual 11th edition

BGY588C and BGE788C The last stage of an HFC network structure is called a terminating amplifier or user amplifier as it is close to the subscribers. Each terminating amplifier requires a single module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 860 MHz systems. These modules are fitting perfectly in the Chinese Connecting to Every Village projects.

BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese Connecting to Every Village projects.

IN port

PAD

EQ

OUT port

IN port

PAD

EQ

OUT port

BGY588C BGE788C CGY888C

bra820

BGY785A BGY787

BGD712C
bra821

CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 860 MHz.

BGO807C BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit.

CGD942C/CGD944C
PAD H L OUT port 1

CGD942C/CGD944C
PAD H L OUT port 2

BGD812
PAD H L OUT port 1

PAD

EQ

BGO807C
RF switch

CGD942C/CGD944C
PAD H L OUT port 3

PAD

EQ

(N + 1)

BGY885A BGD812 BGY887

BGO807C

BGD812
PAD H L OUT port 2
bra823

BGY885A

CGD942C/CGD944C BGO807C
PAD H L OUT port 4
bra822

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C-family application information


NXP C-family by application Application Optical node Optical receiver Distribution amplifier Line extender amplifier Terminating amplifier BGY588C BGE788C CGY888C BGD712C BGO807C CGD944C CGD942C

Push-pull amplifiers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34,5 0.2 - 1.7 -57 -62 8 325 40 - 550 BGE788C 34,2 0.3 - 2.3 -49 -52 8 305 40 - 750 CGY888C 35,5 1.5 typ. -66 -64 3 typ. 280 40 - 870

Power doublers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGD712C 18,5 0.5 - 1.5 -62 -63 7 395 40 - 750 CGD944C 25 1-2 -66 -67 5 450 40 - 870 CGD942C 23 1-2 -66 -67 5 450 40 - 870

Optical receiver
Parameters Responsivity (Rmin) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz) Connector BGO807C min. range max. max. max. typ. range - / SCO / FCO 800 0-2 -71 -55 8,5 190 40 - 870

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NXP Semiconductors RF Manual 11th edition

2.5.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C

Complete GaAs amplifier solutions for Chinese HFC networks


These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard, provide complete functionality in a format that reduces chip-count and lowers overall cost.
Products 870-MHz push-pull amplifier: CGY888C 870-MHz power doublers: CGD942C (23-dB gain), CGD944C (25-dB gain) Features GaAs HFET process for best performance and lowest chip-count Excellent linearity, stability, and reliability High power gain Extremely low noise Excellent return-loss properties Benefits Fully compliant with Chinese SARFT HFC networks standard Transparent cap confirms product authenticity Rugged construction Unconditionally stable Thermally optimized design Applications Hybrid Fiber Coax (HFC) applications Line extenders Trunk amplifiers Fiber deep-optical-node (N+0/1/2) The modules are flexible enough to connect rural communities as part of Chinas Connect Every Village project, and powerful enough to upgrade major cities from analog to highend digital services. The modules have been tested under Chinese raster conditions and fully comply with the Chinese SRAFT standard. They also cover most HFC applications in the range of 550 to 870 MHz and are compatible with previous generations of NXP HFC solutions, so they can be used to upgrade existing networks to a higher level of performance. Produced in NXPs advanced GaAs HFET die process, the modules deliver excellent linearity with extremely low noise, and work seamlessly together. The GaAs process improves performance and, by reducing chip count, saves overall cost. It offers stronger signal strength than Si, so there are fewer amplifiers required, and it provides superior ESD protection compared to GaAs pHEMT processes, so theres no need for external TVS components. The CGY888C is well suited for use in the last stage of an HFC network, which is known as a terminating amplifier or a user amplifier since it is close to subscribers. The CGD942C and the CGD944C offer higher output power and better CTB and CSO than other power doublers, so they are ideal for use in HFC networks that have optical nodes with multiple out-ports. The modules enable each port to cover at least 125 subscribers directly. All the C-family modules are delivered with transparent caps that make it easy to distinguish them from counterfeit products.

To support Chinese HFC CATV infrastructure applications as a single-source supplier, NXP offers the C-family, a complete line of dedicated RF amplifier modules that deliver the very high level of performance required for next-generation HFC TV networks. The family includes the 870-MHz push-pull amplifier CGY888C, a GaAs upgrade of NXPs industry-leading BGY888 and BGY835C products, and two 870-MHz power doublers: the CGD942C, which has a typical gain of 23 dB, and the CGD944C, with a typical gain of 25 dB.

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2.6 Upgrade to a sustainable 1-GHz CATV network NXP high-gain power doublers CGD104x for 1-GHz CATV applications
These high-performance GaAs devices for 1-GHz CATV applications make it easy for cable operators to extend their services to include HDTV, VoIP, and digital simulcasting.
Designed for 1-GHz sustainable networks, these highperformance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-end services like HDTV, VoIP, and digital simulcasting. The power doublers CGD1042 and CGD1044 are ideal for use in line extenders and trunk amplifiers. Their high-output counterparts, the CGD1042H and CGD1044H, are designed for use in fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. Products Power doublers: CGD1042, CGD1044 High-output power doublers: CGD1042H, CGD1044H Features Excellent linearity, stability, and reliability High power gain Extremely low noise Silicon Nitride passivity GaAs HFET dies for high-end applications Rugged construction Benefits Simple upgrade to 1-GHz capable networks Optimized heat management Excellent temperature resistance Low total cost of ownership High ESD levels High power-stress capability Highly automated assembly Applications Hybrid Fiber Coax (HFC) applications Line extenders Trunk amplifiers Fiber deep-optical-node (N+0/1/2) The GaAs HFET die process delivers high gain and high performance, along with lower current and better CTB and CSO ratings. These 1-GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, highpower overstress capabilities, and high ESD levels. The result is low cost of ownership. The GaAs die is inserted in a unique HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the modules high performance stable over a wide range of temperature changes. Assembly is fully automated and requires almost no human intervention and therefore repeatability remains very high. Upcoming push-pull products New push-pulls, currently under development, will combine with the power doublers to service almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB and the CGY1047 a gain of 27dB.

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NXP Semiconductors RF Manual 11th edition

Quick reference data


Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ fmax) (dB) Total current comsumption (mA) Frequency range (MHz)
(1) (2)

typ. typ. typ. typ. max. typ. range

CGD1042 23 2 -70(1) -75(1) 5 450 40 - 1000

CGD1044 25 2 -70(1) -75(1) 5 450 40 - 1000

CGD1042H 23 1,5 -75(2) -76(2) 6 450 40 - 1000

CGD1044H 25 1 -75(2) -76(2) 6 450 40 - 1000

79 analog channels, 13.9 dB extrapolated tilt up to 1 GHz, Vout = 56.9 dBmV @ 1GHz 79 analog channels + 75 digital channels (-6 dB offset, 18 dB extrapolated tilt up to 1 GHz, Vout = 59 dBmV @ 1GHz)

CGD1042(H)/CGD1044(H)
PAD H L OUT port 1

CGD1042(H)/CGD1044(H)
PAD H L OUT port 2

PAD

EQ

CGD1042(H)/CGD1044(H)
PAD H L OUT port 3

RF switch

(N + 1)

CGD1042(H)/CGD1044(H)
PAD H L OUT port 4
bra822

An optical node with multiple out-ports using the CGD1042(H) and CGD1044(H)

Power doubler shown without cap

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2.7 Boost RF performance and reduce system size RF PIN diodes in leadless SOD882T
Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while reducing its form factor and cutting your time to market.
Features  Low series inductance  Low capacitance  Leadless, package with very small footprint (1.0 mm x 0.6 mm)  Low profile (0.4 mm)  Low insertion loss Benefits  Unrivalled performance  Faster time to market  Smaller end products  Easier assembly Applications  Cellular and cordless phones  Low noise blocks  Multi-switch boxes  Set-top boxes  CATV infrastructure  Base stations  eMetering  Bluetooth and wireless LAN  Car Radio Our RF PIN diodes are ideal for a wide range of mobile communications and RF applications. Their low loss and low distortion levels improve battery life and quality in mobile phones and cordless phones. Moreover, their extremely low forward resistance, diode capacitance and series inductance simplify design-in. We offer an extensive portfolio of RF PIN diodes. So youre sure to find the right solution for your needs. The latest additions to this portfolio are housed in the ultra-small, leadless SOD882T package, making them particularly suitable for wireless devices. As part of our ultra-thin leadless package (UTLP) platform, the SOD882T package uses a patent-pending etch process that produces extremely high silicon to footprint ratio and a profile as low as 0.4 mm. In addition, the package has no leads and so delivers very low parasitics for maximum RF performance. This unique combination of properties results in devices that maximize the performance and functionality of your system while reducing its size and weight. They also simplify board assembly to help cut your time to market.

Product overview
Type BAP50LX BAP51LX BAP55LX BAP63LX BAP64LX BAP65LX BAP1321LX BAP142LX Vr (V) 50 60 50 50 100 30 60 50 Limits If (mA) 50 60 100 100 100 100 100 100 0.5 mA 25 5.5 3.4 2.5 20 3.4 3.3 Typ. RD () @ 1 mA 14 3.6 2.3 1.95 10 1 2.4 2.4 10 mA 3 1.5 1 1.17 2 0.56 1.2 1 0V 0.45 0.4 0.27 0.4 0.52 0.65 0.4 0.26 Typ. Cd (pF) @ 1V 0.35 0.3 0.23 0.35 0.37 0.6 0.35 0.23 20 V 0.3 (@ 5 V) 0.2 (@ 5 V) 0.18 (@ 5 V) 0.3 0.23 0.375 0.25 0.15

Functions of pin diodes


Telecom Cellular Switching Attenuating Cordless Lownoise block Consumer and automotive Multi WalkieSet top switch talkie box box Industrial Car radio CATV Base station eMetering Connectivity Bluetooth WLAN

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NXP Semiconductors RF Manual 11th edition

What if you could reduce RF component count in your wireless devices?


Look at RF ICs MMICs, chapter 3.4.1

3. Product portfolio
NXP RF product catalog: http://www.nxp.com/rf

3.1 New products


DEV = In development CQS = Customer qualification samples RFS = Release for supply
Status September 2008

Type

Application / Description

Planned release

Chapter

NEW: RF diodes BB179BLX BB181LX BB182LX BB187LX

Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package Varicap for TV & Satellite in 1006 leadless package

RFS RFS RFS RFS

Released Released Released Released

3.2.1 3.2.1 3.2.1 3.2.1

NEW: Satellite RF ICs TFF1003HN Low noise LO generator for VSAT applications TFF1004HN Fully integrated mixer oscillator downconverter for Satellite LNB TFF1006HN Low noise LO generator for VSAT applications NEW: SiGeC transistors & MMICs BGU7002 SiGeC MMIC for high frequency applications, without ESD protection on RF input BGU7003 SiGeC MMIC for high frequency applications, with ESD protection on RF input BGU7004 SiGeC MMIC, incl matching input/output for GPS LNA BGU7005 SiGeC MMIC, incl matching output for GPS LNA NEW: Medium power amplifier MMICs BGA7027 Medium power amplifier for base stations and e-Metering, leaded package BGA7127 Medium power amplifier for base stations and e-Metering, leadless package NEW: RF CATV modules CGY888C CGY1041 CGY1043 CGY1047 870 MHz, 35 dB gain Push Pull, GaAs HFET SOT115 1 GHz, 21 dB gain Push Pull, GaAs HFET SOT115 1 GHz, 23 dB gain Push Pull, GaAs HFET SOT115 1 GHz, 27 dB gain Push Pull, GaAs HFET SOT115

DEV RFS DEV

Q2 2009 Released Q2 2009

3.4.2 3.4.2 3.4.2

CQS CQS DEV DEV

Q4 2008 Q4 2008 Q1 2009 Q1 2009

3.4.1 3.4.1 3.4.1 3.4.1

DEV DEV

Q1 2009 Q1 2009

3.4.1 3.4.1

RFS DEV DEV CQS

Released Q1 2009 Q1 2009 Q4 2008

3.6.2 3.6.2 3.6.2 3.6.2

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NXP Semiconductors RF Manual 11th edition

3.2 RF diodes
NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes

3.2.1 Varicap diodes


Why choose NXP semiconductors varicap diodes: Reference designs for TV and radio tuning Direct matching process Small tolerances Short leadtimes Complete portfolio covering broad frequency range and variety in package (including leadless) Reliable volume supply

VCO and FM radio tuning varicap diodes


Type Package number of diodes configuration @ f = 1 MHz Cd min (pF) BB145B BB156 BB198 BB199 BB201 BB202** BB202LX** BB207* BB208-02* BB208-03* Bold * ** SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882T SOT23 SOD523 SOD323 1 1 1 1 2 1 1 2 1 1 SG SG SG SG CC SG SG CC SG SG 6.4 14.4 25 36.5 89 28.2 28.2 76 19.9 19.9 Cd typ (pF) 16 95 81 Cd max (pF) 7.2 17.6 28.5 42.5 102 33.5 33.5 86 23.2 23.2 @ VR = (V) 1 1 1 0.5 1 0.2 0.2 1 1 1 Cd min (pF) 2.55 4.2 4.8 11.8 25.5 7.2 7.2 25.5 4.5 4.5 Cd typ (pF) 4.8 27.6 27.6 Cd max (pF) 2.95 5.4 6.8 13.8 29.7 11.2 11.2 29.7 5.4 5.4 @ VR = (V) 4 7.5 4 2 7.5 2.3 2.3 7.5 7.5 7.5 Cd1/ Cd2 min 2.2 2.7 2.8 3.1 2.5 2.5 2.6 3.7 3.7 Cd1/ Cd2 max 3.9 3.8 3.3 5.2 5.2 @ V1 = (V) 1 1 0.5 1 0.2 0.2 1 1 1 @ V2 = (V) 4 7.5 2 7.5 2.3 2.3 7.5 7.5 7.5 rs typ rs max @f=

() 0.4 0.25 0.25 0.35 0.35 0.2 0.35 0.35

() 0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5

(MHz) 470 470 100 100 100 100 100 100 100 100

= Highly recommended product Type of connection: = Including special design for FM car radio (CREST-IC:TEF6860). SG: Single = Including special design for mobile phone tuner ICs. CC: Common Cathode

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TV / VCR / DVD / HDD varicap diodes - UHF tuning


Type Package Cd min (pF) Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882T SOD882T SOD523 SOD323 1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.7 Cd typ (pF) 2.1 2.1 2.1 2.1 2.1 2 Cd max (pF) 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.1 @ VR = (V) 28 28 28 28 28 28 10 28 8.2 8.45 8.45 8.45 8.45 6 8.9 9 9 9 9 9 9 7 10 10.9 10.9 10 10.9 12 @ f = 1 MHz Cd1/Cd2 min Cd1/Cd2 typ Cd1/Cd2 max @ V1 = (V) 1 1 1 1 1 1 1 0.5 @ V2 = (V) 28 28 28 28 28 28 10 28 rs typ rs max @f= @ Cd = (pF) 9 9 9 9 9 30 9 9 2 2 2 2 2 2 2 Cd/ Cd @ V1 = @ V2 = @ Ns =

() 0.6 0.6 0.6 0.65 0.65 0.65 -

() 0.75 0.75 0.75 0.75 0.75

(MHz) 470 470 470 470 470 470 470 470

(V) 0.5 1 1 1 1 1 1 -

(V) 28 28 28 28 28 28 10 10 10 10 10 10 5 5 -

Bold Red = New, highly recommended product

TV / VCR / DVD / HDD varicap diodes - VHF tuning


Type Package Cd min (pF) Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 SOD323 SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD523 SOD882T SOD323 SOD523 SOD882T SOT23 2.4 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57 0.7 0.7 0.7 4.3 Cd typ (pF) 2.6 2.7 2.6 2.6 2.6 2.7 2.7 2.75 2.75 Cd max (pF) 2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92 1.055 1.055 1.055 6 @ f = 1 MHz @ VR = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 Cd1/ Cd2 min 14.5 20.6 13.5 13.5 13.5 20.6 11 11 12 12 5 Cd1/ Cd2 typ 15 22 15 15 15 22 22 14 Cd1/ Cd2 max 16 16 6.5 @ V1 = (V) 1 1 1 1 1 1 1 2 2 0.5 0.5 0.5 3 @ V2 = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 rs typ rs max @f= @ Cd = Cd/ Cd @ V1 = @ V2 = @ Ns =

() 1 0.65 0.65 0.7 1 1 2 -

() 0.9 1.2 0.8 0.8 1.2 0.75 0.75 3 3 0.7

(MHz) 100 100 100 100 470 100 100 470 470 470 470 470 200

(pF) 12 30 30 30 30 30 30 9 9 9 25 2 2 2 2 2 2 2 2 2 -

(V) 0.5 1 1 1 1 1 1 2 2 -

(V) 28 28 28 28 28 28 28 25 25 10 10 10 10 5 10 10 10 10 -

Bold = Highly recommended product Bold Red = New, highly recommended product

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NXP Semiconductors RF Manual 11th edition

3.2.2 PIN diodes


Why choose NXP Semiconductors PIN diodes: Broad portfolio Unrivalled performance Short leadtimes Low series inductance Low insertion loss Low capacitance PIN diodes: typical rD @ 1 mA = < 2
Type Package number of diodes 1 1 1 2 2 1 1 1 2 Conf VR max (V) 30 30 30 30 30 50 50 50 50 IF max (mA) 100 100 100 100 100 100 100 100 100 rD typ () 2.3 2.5 2.5 2.5 rD max () 3.3 3.5 3.5 3.5 rD typ () 0.94 1 1 1 1 1.87 1.95 1.95 1.95 rD max () 3 3 3 3 rD typ () 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 rD max () 0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8 Cd typ (pF) 0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4 Cd typ (pF) 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 Cd max (pF) 0.85 0.9 0.9 0.9 0.9 Cd typ (pF) 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3 Cd max (pF) 0.3 0.32 0.32 0.35

BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W

SOD882T SOD523 SOD323 SOT23 SOT323 SOD882T SOD523 SOD323 SOT323

SG SG SG CC CC SG SG SG CC

PIN diodes: typical rD @ 1 mA = 2.2 - 2.4


Type Package number of diodes Conf VR max (V) IF max (mA) @ f = 100 MHz @ IF = 0.5 mA rD typ () 3.3 3.4 3.4 3.4 3.3 3.3 rD max () 4.5 5 5 5 5 5 @ IF = 1mA rD typ () 2.2 2.4 2.4 2.4 2.4 2.4 rD max () 3.3 3.6 3.6 3.6 3.6 3.6 @ IF = 10mA rD typ () 0.8 1.2 1.2 1.2 1.2 1 rD max () 1.2 1.8 1.8 1.8 1.8 1.8 @ f = 1 MHz @ VR @ VR = 1 V @ VR = 20 V =0V Cd Cd Cd Cd Cd max typ typ max typ (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26

BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX

SOD882T SOD523 SOD323 SOT23 SOD882T SOD882T

1 1 1 2 1 1

SG SG SG SR SG SG

50 60 60 60 60 50

100 100 100 100 100 100

PIN diodes: typical rD @ 1 mA = 3.2 - 3.6


Type Package number of diodes Conf VR max (V) IF max (mA) @ f = 100 MHz @ IF = 0.5 mA rD typ () 4.9 5.5 5.5 5.5 5.5 5.5 rD max () 9 9 9 9 9 @ IF = 1mA rD typ () 3.2 3.6 3.6 3.6 3.6 3.6 rD max () 6.5 6.5 6.5 6.5 6.5 @ VR = @ IF = 10mA 0V rD rD Cd typ max typ () () (pF) 1.4 2.5 0.3 1.5 2.5 0.4 1.5 2.5 0.4 1.5 2.5 0.4 1.5 2.5 0.4 2 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3 Cd max (pF) 0.4 0.55 0.55 0.55 0.55 @ VR = 5 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2 Cd max (pF) 0.3 0.35 0.35 0.35 0.35 -

BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W

SOD882T SOD523 SOD323 SOT323 SOT323 SOT323

1 1 1 2 2 2

SG SG SG SR CC CA

60 60 50 50 50 50

100 50 50 50 50 50

PIN diodes: typical rD @ 1 mA = 10


Type Package number of diodes Conf VR max (V) IF max (mA) @ f = 100 MHz @ IF = 0.5 mA rD typ () 20 20 20 20 20 20 20 20 rD max () 40 40 40 40 40 40 40 40 @ IF = 1mA rD typ () 10 10 10 10 10 10 10 10 rD max () 20 20 20 20 20 20 20 20 @ IF = 10mA rD typ () 2 2 2 2 2 2 2 2 @ VR = 0V rD Cd max typ () (pF) 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 Cd max (pF) @ VR = 20 V Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35

BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W

SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323

1 1 2 2 2 2 2 2

SG SG SR SR CC CC CA CA

175 175 175 100 175 100 175 100

100 100 100 100 100 100 100 100

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51

PIN diodes: typical rD @ 1 mA = 14 - 16


Type Package number of diodes conf VR max (V) IF max (mA) @ f = 100 MHz @ IF = 0.5 mA rD typ () 25 25 25 25 25 25 26 31 rD max () 40 40 40 40 40 40 40 50 @ IF = 1mA rD typ () 14 14 14 14 14 14 14 16 rD max () 25 25 25 25 25 25 25 26 @ IF = 10mA rD typ () 3 3 3 3 3 3 3 2.6 @ VR = 0V rD Cd max typ () (pF) 5 0.4 5 0.4 5 0.45 5 0.45 5 0.45 5 0.45 5 0.4 4.4 0.48 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 0.34 Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 0.17 Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 0.3 @ VR = (V) 5 5 5 5 1 5 5 20

BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP64LX

SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOD882T SOD882T

1 1 2 2 2 2 1 1

SG SG SR SR CC CC SG SG

50 50 50 50 50 50 50 60

50 50 50 50 50 50 50 100

PIN diodes: typical rD @ 1 mA = 40


Type Package number of diodes Confi VR max (V) IF max (mA) @ f = 100 MHz @ IF = 0.5 mA rD typ () 77 77 77 77 77 rD max () 100 100 100 100 100 @ IF = 1mA rD typ () 40 40 40 40 40 rD max () 50 50 50 50 50 @ IF = 10mA rD typ () 5.4 5.4 5.4 5.4 5.4 rD max () 7 7 7 7 7 @ VR =0V @ f = 1 MHz @ VR = 1 V Cd max (pF) @ VR = 20 V Cd typ Cd max (pF) (pF) 0.2 0.2 0.25 0.25 0.2 0.25 0.25 0.3 0.3 0.25

Cd typ Cd typ (pF) (pF) 0.57 0.57 0.6 0.6 0.57 0.4 0.4 0.43 0.43 0.4

BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM

SOD523 SOD323 SOT323 SOT23 SOT363

1 1 2 2 4

SG SG SR CC SR

50 50 50 50 50

100 100 100 100 100

Bold = highly recommended product

52

NXP Semiconductors RF Manual 11th edition

3.2.3 Band-switch diodes


Why choose NXP Semiconductors bandswitch diodes: Reliable volume supplier Short leadtimes Low series Inductance Low Insertion loss Low capacitance High reverse Isolation

Type BA277 BA278 BA591 BA891 BAT18

Package SOD523 SOD523V SOD323 SOD523 SOT23

VR max (V) 35 35 35 35 35

IF max (mA) 100 100 100 100 100

rD max () 0.7 0.7 0.7 0.7 0.7

@ IF = (mA) 2 2 3 3 5

@f= (MHz) 100 100 100 100 200

Cd max (pF) 1.2 1.2 0.9 0.9 1

@ VR = (V) 6 6 3 3 20

@f= (MHz) 1 1 1 1 1

Bold = Highly recommended product

3.2.4 Schottky diodes


Why choose NXP Semiconductors schottky diodes: (Very) low diode capacitance (Very) low forward voltage Single and triple-isolated diode (Ultra / very) small package Applications Digital applications: - ultra high-speed switching - clamping circuits RF applications: - diode ring mixer - RF detector - RF voltage doubler

Low-capacitance Schottky diodes


Type BAT17 PMBD353 PMBD354 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 Package SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 Configuration single dual series dual series single triple isolated single triple isolated single dual series dual c.c dual c.a. triple isolated single VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15 IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V

NXP Semiconductors RF Manual 11th edition

53

3.3 RF Bipolar transistors


3.3.1 Wideband transistors
RF wideband transistors: http://www.nxp.com/rftransistors Why choose NXP Semiconductors wideband transistors: st th Broad portfolio (1 - 7 generation) Short leadtimes Smallest packages Volume delivery Wideband transistors The fT-IC curve represents Transition Frequency (fT) characteristics as a function of collector current (IC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC) & similar transition frequencies (fT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.

Wideband transistors line-up per frequency

100
(33)

bra510

fT (GHz)
(26) (25) (27) (29) (32) (31) (19) (20) (21) (15) (16) (11) (7) (8) (4) (1) (3) (9) (10) (22) (23)

7th generation

5th generation 4th generation

10

(30)

(14) (18)

3rd generation (12)

2nd generation

1st generation

1 0.1

0.2

0.5

10

20

50

100

200

500 IC (mA)

1000

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NXP Semiconductors RF Manual 11th edition

Wideband transistors (RF small signal) RF power transistors for handheld equipment
VCEO (max) (V) Package Ptot (max) (mW) GUM (typ) (dB)

Polarity

BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81

SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223

8 8 10 10 8 10 9.5

250 250 250 500 250 250 500

400 400 400 2000 2100 2000 2000

NPN NPN NPN NPN NPN NPN NPN

7 7 7 -

1900 1900 1900 -

1 1 1 -

RF wideband transistors generation 1 / 2 / 3


Ptot (max) (mW) VCEO (max) (V) GUM (typ) (dB) GUM (typ) (dB)

IC (max) (mA)

fT (typ) (GHz)

NF (typ) (dB)

NF (typ) (dB)

@ VCE = (V)

@ VCE = (V)

Gemeration

@ VCE = (V)

@ VCE = (V) 3.6 3.6 3.6 2000 1000 2000 1000 1000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 5 5 5 -5 -10 5 5 5 5 5 45 15 5 5 5 10 10 10 -10 -5 8 8 8 8 8 10 8 8 8 8 @ VCE = (V) 55 @ IC = (mA) @f= (MHz)

IC (max) (mA)

Type

@ IC = (mA)

@ IC = (mA)

BFS17 BFS17W BFT25 BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG67/XR BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR93AR BFR93AW

1st 1st 1st 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd

3 3 1 18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9 16 15 22 22 22 14 14 14 8 8 8 22 14 8 8 8

SOT23 SOT323 SOT23

1 1.6 2.3

15 15 5 5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12 15 10 15 15 15 10 10 10 12 12 12 15 10 12 12 12

25 300 NPN 50 300 NPN 6.5 30 NPN 6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50 150 100 200 200 200 50 50 50 35 35 60 200 50 35 35 35 32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300 1000 1000 400 400 2000 380 380 380 300 300 700 2250 300 300 300 300

18

500

12

800 1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000 1000 800 800 2000 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000

4.5 4.5 3.8

500 500 500 1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500 1000 1000 1000 1000 1000 500 1000 1000 1000 1000

@ IC = (mA) 2 2 1 0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10 15 15 15 5 5 45 5 5 5 5

@ f = (MHz)

Package

Curve

Polarity

@f= (MHz)

@f= (MHz)

Type

5 5 1 1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5 8 8 8 8 8 10 8 8 8 8

SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4 SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143R SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT323 7 8 5 5 7 8 8 8 6 6 6 7 8 6 6 5

NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 16 18 13 13 13 17 17 17 16 16 11 13 13 13 13 500 500 900 900 900 1000 1000 1000 1000 1000 900 1000 1000 1000 1000 100 50 80 80 70 15 15 15 30 30 70 15 30 30 30

18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10 10 8 4 4 12 8 8 8 8 8 12 8 8 8 8 12 15 7.5 7.5 7.5 10 10 10 10 10 13.5 5.5 8 7 7 8

0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4 100 50 80 80 70 15 15 15 30 30 45 70 15 30 30 30 10 8 4 4 12 8 8 8 8 8 10 12 8 8 8 8 1.7 1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.5

Bold = Highly recommended product

NXP Semiconductors RF Manual 11th edition

@ IC = (mA) 3 2.1 3 3 3 2.5 2.5 2.5 2.3 2.3 3 2.7 3 3 2.1

@f= (MHz)

RF wideband transistors generation 4 - 4.5


PL(1dB) (typ) (dBmW)

Ptot (max) (mW)

VCEO (max) (V)

GUM (typ) (dB)

IP3 (typ) (dBm)

IC (max) (mA)

fT (typ) (GHz)

NF (typ) (dB)

NF (typ) (dB)

@ VCE = (V)

@ VCE = (V)

@ VCE = (V)

@ VCE = (V)

BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR

4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4.5 4.5 4.5 4.5

19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21 30 30 31 31

SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5 SOT143R SOT343R SOT143R SOT143R 14 14 14 14

15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10 6 6 6 6

18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100 10 10 35 35

150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270 60 60 210 210

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2

2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 1800 1800 1800 1800

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30 5 5 15 15

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3

1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3 -

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 -

5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 -

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6 -

1.9 2000 1.25 1.9 2000 1.25 1.9 2000 1.25 1.9 2000 1.25 1.9 2000 1.25 1.9 2000 5 1.9 2000 5 1.9 2000 5 1.85 2000 5 1.85 2000 5 2.1 2000 10 2.1 2000 10 2.1 2000 10 2.1 2000 10 2.1 2000 10 2.1 2000 10 2.1 2000 10 1.9 2000 5 1.9 2000 5 2.7 2000 15 1.9 2000 5 1.9 2000 1.25 1.9 2000 5 1.9 2000 5 2.1 2000 10 1.9 2000 1.25 1.9 2000 5 2.1 2000 10 2 2000 5 2 2000 5 2.1 2000 5 2.1 2000 5 1.8 2000 5 1 1 1.1 1.1 2000 2000 2000 2000 1 1 3 3

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3

4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 1.8 1.8 8.7 8.7

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 -

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -

10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 8.5 8.5 19.4 19.4

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 5 5 15 15

NPN 18 NPN 18 NPN 18.3 NPN 18.3

1800 5 1800 5 1800 15 1800 15

RF wideband transistors generation 5 - 7


PL(1dB) (typ) BmW) Ptot (max) (mW)

VCEO (max) (V)

GUM (typ) (dB)

IP3 (typ) (dBm)

IC (max) (mA)

fT (typ) (GHz)

NF (typ) (dB)

NF (typ) (dB)

@ VCE = (V)

@ VCE = (V)

@ VCE = (V)

@ VCE = (V)

BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFU725F

5th 5th 5th 5th 5th 5th 5th 7th

32 25 26 27 27 27 29 33

SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R SOT343F

17 22 25 25 25 21

4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250 40

600 16 54 135 135 135 360

NPN NPN NPN NPN NPN NPN NPN

10 22 21 23 22 20 16

1900 2000 2000 2000 2000 2000 2000 5800

1 3 10 25 25 25 80 25

3.6 2 2 2 2 2 2 2

1 0.9 0.8 0.8 0.8 1.2

900 900 900 900 900 900

1 1 2 2 2 8 5

2 2 2 2 2 2 2

1.6 1.2 1.2 1.2 1.2 1.8 0.7

2000 2000 2000 2000 2000 2000 5800

1 1 2 2 2 8 5

2 2 2 2 2 2 2

5 1 5 2 12 2 12 2 12 2 20 3.6 8 2

900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80 5800 25 19 25

70 2.8

136 NPN 18

0.47 2400

Bold = Highly recommended product

56

NXP Semiconductors RF Manual 11th edition

@ VCE = (V) 1 2 2 2 2 2 2

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

Generation

@ IC =(mA)

@ f =(MHz)

Package

Curve

Polarity

@f= (MHz)

@f= (MHz)

@f= (MHz)

Type

@ VCE = (V) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

@ IC = (mA)

@ f = (MHz)

@ f = (MHz)

Generation

Package

Curve

Polarity

@f= (MHz)

@f= (MHz)

Type

3.4 RF ICs
3.4.1 MMICs
NXP RF MMICs: http://www.nxp.com/mmics Why choose NXP Semiconductors MMICs: Reduced RF component count Easy circuit design-in Reduced board size Short time-to-market Broad portfolio Volume delivery Short leadtimes

General-purpose wideband amplifiers (50 Ohm gain blocks)


Type Package Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5 @ Fu(1) Is @-3dB (mA) (GHz) 12.6 3.6(2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 3.6 14.6(2) 27.5 2.1 2.5 21.0 (2) 4.58 2.7 3.3 4.3(2) 3.2 15.9(2) 8.0 3.2
(2)

BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 Notes:
(1)

SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363

NF (dB) 4.8 1.9(2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3(2)

@ 1GHz Psat Gain(3) (dBm) (dB) 2.8 13.1 -2.3 21.8 21.4 13.2(2) 10.5 23.2(2) 12.5 22.7 4.8 21.3 13.8 30 (2) 9.7 20.1 14.0 35.5(2) 12.9 32.3 -3.4 20.4 -4.0 21.7 11.6 22.9 1.4 23.9
(3)

P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0

100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6

Gain(3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0

3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1

Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6

Limits Is (mA) 20 15 50 34 35 25 35 50 35 30 10 8 25 15

Ptot (mW) 200 200 200 200 200 200 200 200 200 200 200 200 200 200

Upper -3 dB point, to gain at 1 GHz.

Optimized parameter

Gain = |S21|2

2-stage variable-gain linear amplifier


Type Package Vs (V) 3
(2)

@ Is (mA) 51

Frequency Range 800-2500

BGA2031/1 Notes:
(1)

SOT363

Gain(1) (dB) 24

@ 900MHz DG(2) P1dB ACPR Gain(1) (dB) (dBm) (dBc) (dB) 62 11 49 23

@1900 MHz DG(2) P1dB ACPR (dB) (dBm) (dBc) 56 13 49

Vs (V) 3.3

Limits Is (mA) 77

Ptot (mW) 200

Gain = GP, power gain.

DG = Gain control range

Wideband linear mixer


Type Package Vs (V) 3
(2)

@ Is (mA) 6

BGA2022 Notes:
(1)

SOT363 Gain = GP, power gain.

RF Input Frequency Range 800-2500

IF Output Frequency Range 50-500

NF (dB) 9

@ 880MHz Gain(1) OIP3 (dB) (dBm) 5 4

@1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10

Vs (V) 4

Limits Is (mA) 10

Ptot (mW) 40

DG = Gain control range

NXP Semiconductors RF Manual 11th edition

57

Low-noise wideband amplifiers


Type Package Vs (V) 2.5 2.5 3 3
(3)

@ Is (mA) 4 10 (2) 15 7 |S21|2 NF (dB) 1.3 1.8 1.5 -

BGA2001 BGA2003 BGA2011 BGA2012 Notes:


(1)

SOT343R SOT343R SOT363 SOT363 MSG


(2)

@ 900MHz Gain IIP3 (dB) (dBm) -7.4 22(1) 24 (1) -6.5 10 19(3) -

@1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5(1) -4.5 1.8 16(1) -4.8 10 1.7 16(3)

100 MHz 20 26 24 22

Gain(3) (dB) @ 1 2.6 GHz GHz 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6

3.0 GHz 10.7 10.1 6.5 10.5

Vs (V) 4.5 4.5 4.5 4.5

Limits Is (mA) 30 30 30 15

Ptot (mW) 135 135 135 70

Adjustable bias

General-purpose, med. power ampl. (50 ohm gain blocks)


Type Package Vs (1) (V) 4.1 5.1 4.8 @ Is (mA) 84 78 81 NF (dB) 3.5 3.1 3.0
(2)

BGA6289 BGA6489 BGA6589 Notes:


(1)

SOT89 SOT89 SOT89

@ 900MHz Gain(2) OIP3 P1dB (dB) (dBm) (dBm) 15 31 17 20 33 20 22 33 21 Gain = |S21|2

NF (dB) 3.7 3.3 3.3

@1800 MHz Gain(2) OIP3 P1dB (dB) (dBm) (dBm) 13 28 15 16 30 17 17 32 20

Gain(2) 2.5 GHz 12 15 15

Vs (1) (V) 6 6 6

Limits Is (mA) 120 120 120

Ptot (mW) 480 480 480

Device voltage without bias resistor.

Medium power amplifier MMICs for e.g.: base stations, e-Metering, with shutdown function
Type Package f @ f = 400 MHz - 1 GHz GP (MHz) BGA7027 BGA7127 SOT505 SOT908 leaded leadless 400 - 2700 400 - 2700 (dB) 19 19 @f= 1.8 -2.2 GHz GP (dB) 16 16 @f = 2.7 GHz GP (dB) 15 15 @ VCC = 3.3 V @ VCC = 5V Efficiency @ VCC = 3.3 V @ VCC = 5 V

PL(1dB) (dBm) 26.5 26.5

PL(1dB) (dBm) 27 27 (%) 40 40

IP3O (dBm) 38.5 38.5

IP3O (dBm) 43.5 43.5

Bold Red = New, highly recommended product

SiGeC MMICs:
Type Package VCC (V) BGU7002 BGU7003 BGU7004 BGU7005 SOT891 SOT891 SOT886 SOT886 2.5 2.5 1.8 1.8 @ ICC (mA) 5 5 5 5 Gp(max) (dB) 19 19 20 21 @ 1.575 GHz NF (dB) 0.7 0.85 1.1 0.8 PL(1dB) (dBm) 8 8 -29 -29 IP3O dBm 18 18 -18 -18 VCC (V) 2.8 2.8 2.8 2.8 Limits ICC (mA) 25 25 -

Bold Red = New, highly recommended product

58

NXP Semiconductors RF Manual 11th edition

3.4.2 Satellite LNB RF ICs


Why choose NXP Semiconductors RF ICs: Lowest total cost of ownership Alignment free concept Easy circuit design-in Improved LO stability Satellite LNB Downconverter ICs
Type Package Input frequency range (GHz) TFF1000HN TFF1004HN SOT616 SOT616 10.7 to 12.75 10.7 to 12.75 Conversion gain Gc (dB) 42 32 Noise figure NF (dB) 9 9 Output IP3 IP3(out) (dB) 10 10 Switched LO frequency (GHz) 9.75 / 10.6 9.75 / 10.6

Low noise LO generators for VSAT applications


Type Package fIN(REF) VCC ICC PLL phase noise @ N=64 f 0(RF)
Typ MHz V Max mA @ 1 kHz dBc/Hz @ 100 kHz dBc/Hz @ 1 MHz dBc/Hz (GHz)

PLL V0 (VREGVCO) Typ


V

Output buffer ICP Typ


mA

Input Si Min
dBm

K VCO Typ
GHz/V

Po Typ
dBm

RLout(RF) Max
dB

TFF1003HN TFF1006HN

SOT616 SOT616

50~815 36~586

3.3 3.3

130 130

-94 -94

-100 -100

-130 -130

12.8~13.05 9.375

2.7 2.7

1 1

0.75 0.75

-5 -5

-10 -10

-10 -10

Bold Red = New, highly recommended product

Satellite LNB Biasing ICs


Type Package Supply voltage VCC (V) UAF3000TS UAF4000TS SOT360 SOT403 3.3 or 5 3.3 or 5 Drain voltage V D (V) 2 2.2 Drain current IDO (mA) 10 10 Supply current ICC (mA) 6 6 Polarisation detection voltage VPOL (V) 14.75 -

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3.5 RF MOS transistors


3.5.1 JFETs
NXP RF FETs: http://www.nxp.com/rffets Why choose NXP Semiconductors JFETs: Reliable volume supplier Short leadtimes Broad portfolio

N-channel junction field-effect transistors for switching


Type Package VDS (V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40 IG (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30 -Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS RDSON Crs (pF) ( ) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 max 15 15 15 typ 6 6 6 35 35 35 6 6 6 35 35 35 t off (ns) max 25 50 100 20 35 50

BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23

P-channel junction field-effect transistors for switching


Type Package VDS (V) max 30 30 30 30 30 30 30 30 IG (mA) max 50 50 50 50 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20 -Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS RDSON Crs (pF) ( ) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 7 15 35 45 max typ 15 30 35 45 15 30 35 45 t off (ns) max -

PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177

SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54

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N-channel junction field-effect transistors for general RF applications


Type Package VDS (V) max IG (mA) max I DSS (mA) min max CHARACTERISTICS Vgs off |Yfs| (V) (mS) min max min max 3 3 3 3 3 3 4.5 4.5 4.5 12 16 20 35 2.5 4 6 7 1 1.5 >1 >10 >10 >10 10 4 4.5 6.5 6.5 6.5 6.5 6.5 6.5 20 25 30 Crs (pF) min Typ.=1.1 Typ.=1.1 Typ.=1.1 0.8 0.8 0.8 0.8 0.8 0.8 2.1 2.1 2.1 typ=1.9 0.4 0.4 0.4 0.4 1.5 1.5 1.5 1.3 1.3 1.3 1.3 max 2.7 2.7 2.7 0.5 0.5 0.5 0.5 2.5 2.5 2.5 2.5

DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 <8 BF245B SOT54 30 10 6 15 <8 BF245C SOT54 30 10 12 25 <8 BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages SOT23 20 10 0.7 3 typ. 0.8 BF5101) SOT23 20 10 2.5 7 typ. 1.5 BF5111) SOT23 20 10 6 12 typ. 2.2 BF5121) SOT23 20 10 10 18 typ. 3 BF5131) Low-level general purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 <2.5 General-purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 <1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5
1)

Bold = Highly recommended product Asymmetrical

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3.5.2 MOSFETs

Why choose NXP Semiconductors MOSFETs: Reference designs for TV tuning Short leadtimes Broad portfolio Smallest packages 2-in-1 FETs for tuner applications Reliable volume supply Best performance MOSFETs for TV tuning

N-channel, single MOSFETs for switching


Type Package VDS (V) max 10 3 3 3 ID (mA) max 50 10 10 10 I DSS (mA) min max 1003) 1003) 1003) V(p)GS (V) min max 21) 0.12) 74) 74) 74) RDSON ( ) max 45 20 20 20 CHARACTERISTICS Crs t on (pF) (ns) min max typ max typ.0.6 1 t off (ns) typ max 5 |S21(on)|2 (dB) max 2.5 3 3 |S21(off)|2 (dB) min 30 30 30 MODE

BSS83 SOT143 Silicon RF Switches BF1107 SOT23 SOT143B BF11085) SOT143R BF1108R5)

enh. depl. depl. depl.

Bold = Highly recommended product

N-channel, dual-gate MOSFETs


Type Package VDS (V) max With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904 SOT143 BF904R SOT143R BF904WR SOT343R BF909 SOT143 BF909R SOT143R SOT343R BF909WR 3) 4) 5)
1) 2)

ID (mA) max 40 40 40 20 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 I DSX (mA) min max 3 3 3 4 4 4 2 2 2 8 8 8 8 8 8 8 8 8 12 12 12 27 27 27 25 20 20 18 18 18 16 16 16 16 16 16 13 13 13 20 20 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 8) 9)
6) 7)

CHARACTERISTICS |Yfs| Cis Cos (mS) (pF) (pF) min max typ typ 36 36 36 10 20 15 15 21 21 22 25 25 25 24 24 24 22 22 22 36 36 36 50 50 50 30 30 30 50 50 50 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 2.2 9) 2.2 9) 2.2 9) 2.2 9) 2.2 9) 2.2 9) 2.2 2.2 2.2 3.6 3.6 3.6 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.28) 1.28) 1.28) 1.3 8) 1.3 8) 1.3 8) 1.3 1.3 1.3 2.3 2.3 2.3

F @ 800 MHz (dB) typ 1.5 1.5 1.5 1 1.27) 17) 1.8 1 1 1 1.7 1.7 1.7 1.5 1.5 1.5 2 2 2 2 2 2

VHF

UHF

12 12 12 20 20 20 20 12 12 12 7 7 7 11 11 11 7 7 7 7 7 7

-2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 16) 16) 16) 16) 16) 16)

X X X X X X X X X X X X X X X X X X X X X

X X X X X X X X X X X X X X X X X X X

Asymmetrical VGS(th) ID VSG Depletion FET plus diode in one package

VGS (th) @ 200 MHz C OSS C ig

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N-channel, dual-gate MOSFETs


Type Package VDS (V) max Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R SOT363 BF1102(R)10) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R SOT363 BF120311) BF120410) BF1205C11)12)13) BF120511)12)13) BF120611) BF1206F11) BF120711)13)14) BF120811)12)13) SOT363 SOT363 SOT363 SOT363 SOT666 SOT363 SOT666 14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 ID (mA) max 30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 I DSX (mA) min max 8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.26) 1.26) 1.26) 16) 16) 16) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.26) 1.2 1.26) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 CHARACTERISTICS |Yfs| Cis Cos (mS) (pF) (pF) min max typ typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 2.2 2.2 2.2 2.2 2.2 2.2 2.89) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 1.4 1.4 1.4 1.28) 1.28) 1.28) 1.6 8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 F @ 800 MHz (dB) typ 2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 VHF UHF

BF1208D11)12)13) SOT666 BF121011)12) BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF121410) SOT363 SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363

X X X X X X X X X X X X X X X X X X X X X X X X X X X

X X X X X X X X X X X X X X X X X X X X X X X X X X X

Bold = Highly recommended product


1)

3) 4) 5) 7) 8)
2)

Asymmetrcal VGS(th) I D VSG Depletion FET plus diode in one package @200 MHz C OSS

C ig Two equal dual gate MOSFETs in one package 11) Two low noise gain amplifiers in one package 12) Transistor A: fully internal bias, transistor B: partly internal bias 13) Internal switching function 14) Transistor A: partly internal bias, transistor B: fully internal bias
9) 10)

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3.6 RF Modules
NXP RF CATV-HFC modules: http://www.nxp.com/catv Why choose NXP Semiconductors RF Modules: Excellent linearity, stability and reliability Rugged construction Extremely low noise High power gain Low total cost of ownership CATV types for Chinese (C-types) and Indian market (OM-types) New in our CATV Hybrid portfolio are two families of products. The C types are specially designed for the Chinese market, fitting two major governmental projects. And the OM types, also called the INDI types, are designed for low-end CATV infrastructure networks deployed in India. Both families will be extended in the following months to cover most of those two specific market segments. C types (China) CATV push pulls, chapter 3.6.2 : BGY588C, BGE788C, CGY888C CATV power doublers, chapter 3.6.3 : BGD712C CATV optical receivers, chapter 3.6.4 : BGO807C OM types (India) CATV push pulls, chapter 3.6.2 : OM7650 and OM7670

3.6.1 CATV Reverse Hybrids


Frequency range 5 -65 MHz 5 -75 MHz 5 -120 MHz 5 -200 MHz 5-200 MHz Type number BGS67A BGY68 BGY66B BGY67 BGY67A BGR269 Gain (dB) 25 - 26 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5 Slope (dB) -0.1 - 0.6 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 0 - 0.6 FL 0.2 0.2 0.2 0.2 0.2 0.4 RL IN /RL OUT 20/20 20/20 20/20 20/20 20/20 20/20 CTB -64 -68 -66 -67 -67 -57 XMOD -54 -60 -54 -60 -59 -50 CSO -70 @ Ch 4 4 14 22 22 28 @ Vo (dBmV) 50 50 48 50 50 50 F @ fmax 3.5 3.5 5 5.5 5.5 5.2 Itot (mA) 85 135 135 230 230 160

3.6.2 CATV Push-Pulls


Frequency range Type number OM7650 BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 OM7670 BGY785A BGE788C BGY787 BGE787B BGE788 BGY883 BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888 BGY1085A Gain (dB) 33.2 - 35.5 33.2 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 33.5 - 35.5 17.7 - 18.7 21 - 22 33.2 - 35.2 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 33.5 - 34.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 18 - 19 Slope (dB) 0.2 - 2 0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 1/4 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0.5 - 2.5 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0-2 FL 0.5 0.2 0.2 0.4 0.4 0.2 0.2 0.3 0.6 0.5 0.5 0.5 0.3 0.5 0.3 0.3 0.3 0.5 0.6 0.5 0.5 0.3 RL IN /RL OUT 10/10 16/16 20/20 20/20 20/20 20/20 20/20 20/20 10/8 20/20 16/16 20/20 20/20 20/20 20/20 14/14 20/20 20/20 20/20 20/20 21/21 20/20 20/20 20/20 CTB -45 -57 -59 -57 -57 -57 -55 -54 -43 -53 -49 -53 -50 -49 -61 -61 -55 -68 -60 -60 -60 -53 XMOD -62 -58 -60 -59 -60 -54 -56 -52 -54 -51 -61 -61 -61 -59 -60 -59 -54 CSO -57 -62 -59 -54 -57 -62 -56 -52 -54 -53 -52 -53 -56 -52 -61 -61 -57 -66 -55 -60 -55 -56 @ Ch 77 77 77 77 77 77 85 85 110 110 110 110 110 110 49 129 129 49 129 112 49 49 49 150 @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 59 59 44 40 44 44 44 44 44 F @ fmax 8 8 8 7 6.5 6 8.5 6.5 8 7 8 6.5 7 7 8.5 8 8 8 6.5 4.0 7.0 6.5 7 7.5 Itot (mA) 340 345 240 240 340 340 240 240 340 240 325 240 320 320 235 240 240 240 235 280 340 340 340 240

40 - 550 MHz

40 - 600 MHz

40 - 750 MHz

40 - 870 MHz

40 -1000 MHz

Bold Red = New, highly recommended product

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CATV Push-Pulls 1 GHz


freq range 40-1000MHz 40-1000MHz 40-1000MHz type CGY1041 CGY1043 CGY1047 gain 21 23 27 slope 1.0 - 2.0dB 1.0 - 2.0dB 1.0 - 2.0dB fl 0.5 0.5 0.5 Rlin/Rlout 20/18dB 20/18dB 20/18dB CTB -62dBc -62dBc -62dBc Xmod -58dBc -58dBc -58dBc CSO -64dBc -64dBc -64dBc @ Ch 79NTSC+75digital 79NTSC+75digital 79NTSC+75digital @ Vout 44dBmV flat 44dBmV flat 44dBmV flat NF 4.0dB 4.0dB 4.0dB Itot 270mA 270mA 270mA

Bold Red = New, highly recommended product

3.6.3 CATV power doublers


Frequency range 40 - 550 MHz Type number Gain (dB) 18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 19.5 - 20.5 19.7 - 20.3 21.2 - 21.8 20.5 - 22.5 23 - 25 20.5 - 22.5 22.5 - 24.5 22 - 24 23 - 25 Slope (dB) 0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.2 - 2 0.4 - 1.4 0.5 - 1.5 1-2 1-2 1.5 - 2.5 1.5 - 2.5 0 - 1.5 0-1 FL 0.3 0.5 0.25 0.35 0.4 0.5 0.35 0.5 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3 0.3 0.3 0.3 RL IN /RL OUT 20/20 20/20 20/20 23/23 17/17 20/20 23/23 20/20 20/20 23/23 20/20 22/25 22/25 18/18 18/18 17/17 17/17 17.5/20 17.5/20 CTB -65 -58 -58 -62 -62 -57 -61 -54 -58 -53 -57.5 -55 -66 -66 -68 -68 -70 -70 XMOD -68 -62 -62 -63 -61 -62 -59 -62 -61 -62 -58 -58 -58 -64 -64 -67 -67 CSO -62 -58 -58 -63 -63 -56 -62 -56 -60 -54 -59 -56 -68 -68 -68 -68 -68 -68 @ Ch 77 110 110 112 112 110 112 129 129 132 129 132 129 132 132 79 79 79 + 75* 79 + 75* @ Vo (dBmV) 44 44 44 44 44 44 44 59 44 44 44 44 44 48 48 56.9 56.9 59 59 F @ fmax 8 8.5 8.5 7 7 8.5 7 8 9 7.5 7.5 7.5 7.5 3.5 3.5 5.0 5.0 5.0 5.0 Itot (mA) 435 435 435 410 410 435 410 450 410 410 410 410 375 450 450 450 450 450 450

BGD502 BGD702 BGD702N BGD712 40 -750 MHz BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD804 40 - 870 MHz BGD814 BGD816L CGD942C CGD944C CGD1042 CGD1044 40 - 1000 MHz CGD1042H CGD1044H

Bold *

= Highly recommended product = digital channels

3.6.4 CATV optical receivers


Frequency Type number range Forward Path Receiver BGO807 BGO807/FC0 BGO807/SC0 BGO807C 40 - 870 MHz BGO807C/FC0 BGO807C/SC0 BGO827 BGO827/FC0 BGO827/SC0 Bold = Highly recommended product * NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office. Rmin (V/W) 800 750 750 800 750 750 800 750 750 Slope (dB) 0 -2 0 -2 0 -2 0 -2 0 -2 0 -2 0-2 0 -2 0-2 FL S22 (dB) 11 11 11 11 11 11 11 11 11 d3 d2 @fm (MHz) 854.5 854.5 854.5 854.4 854.5 854.5 854.5 854.5 854.5 @Pi (mW) 1 1 1 1 1 1 1 1 1 F @ fmax Conn. Itot (mA) 205 205 205 205 205 205 205 205 205

1 1 1 1 1 1 1 1 1

-71 -71 -71 -71 -71 -71 -73 -73 -73

-55 -55 -55 -54 -55 -55 -57 -57 -57

8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5

FC SC FC SC FC SC

Description Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels and the output voltage at which CTB, XM, CSO and d2 are characterized @fm. Measurement frequency is F. Noise Figure is in dB or Noise in pA/Sqrt(Hz). FL is Flatness Rmin is Minimum responsivity of optical receivers.

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3.7 Fiber-optic transceiver ICs


NXP Optical Networking http://www.nxp.com/opticalnetworking Why choose NXP Semiconductors Fiber Optic Transceivers: Reliable supplier Easy to design in Robust products

3.7.1 Transimpedance amplifiers


Part number Data-rate Package type Mb/s die only die only die only die only Bare die In [nA] 10 67 130 450 Eq Sens [dBm] -40 -32 -29 -24 RSSI Output Vcc Power dissipation mW 50 60 70 86

TZA3036 TZA3026 TZA3046 TZA3013

0-155 0-622 0-1250 0-2488

X X X X

Yes Yes Yes -

50 Ohm 50 Ohm 50 Ohm 50 Ohm

3.3 3.3 3.3 3.3

Bold = highly recommended product *) NOTES: All figures given are typical at 25 deg C Power dissipation is given for Vcc = 3.3 V Eq. sensitivity conditions: Calculated from noise figure using a lowpass bandwidth filter at 0.7x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W.

What if you could lower total cost of ownership for your satellite solutions?
Look at TFF1004HN RF ICs for satellite LNB, chapter 2.3

4. Design-in tools
This chapter will make it easier to find and get hold of design-in information and materials, with web links or references to the NXP representative / authorized distributor.

4.1 S-Parameters
S-Parameters help you to simulate the behaviour of our devices to your specific adjustments for e.g. voltage, current.

4.2 Spice models


Spice models help you to create the optimal performance and to understand which external components have a certain influence on that performance. Wideband transistors, FETs & Varicaps diodes First, click on the type number which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the Spice models.
Wideband transistors BFG505 BFG92A/X BFG505/X BFG93A BFG505W/X BFG94 BFG520 BFG97 BFG520/X BFM505 BFG520/XR BFM520 BFG520W BFQ149 BFG520W/X BFQ18A BFG540 BFQ19 BFG540/X BFQ540 BFG540/XR BFQ67 BFG540W BFQ67W BFG540W/X BFR106 BFG540W/XR BFR505 BFG541 BFR505T BFG590 BFR520 BFG590/X BFR540 BFG591 BFR92A BFG67 BFR92AW BFG67/X BFR93A FETs BF909

Wideband transistors, FETs & MMICs First, click on the type number, which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the S-Parameters.
Wideband transistors BFG480W BFQ19 BFG505 BFQ67 BFG520 BFQ67W BFG520W BFR106 BFG540 BFR505 BFG540W BFR520 BFG541 BFR540 BFG590 BFR92A BFG591 BFR92AW BFG93A BFR93A BFG94 BFR93AW BFG97 BFS17 BFM505 BFS17A BFM520 BFS17W BFQ149 BFS25A BFQ18A BFS505 FETs BF1212 BF1212R BF1212WR MMICs BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGM2011 BGA2715

BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W

BFS520 BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BRF505T PBR941 PBR951 PRF947 PRF949 PRF957

BF1211 BF1211R BF1211WR

BF511 BF513 BF862

BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W

BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W PBR941 PBR951 PRF947 PRF949 PRF957

BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709

BGA2716 BGA2717 BGA2011 BGA2012 BGA6289 BGA6489 BGA6589

BF862 BF904

BF908

BF998

BB145B BB149 BB149A

BB156 BB179 BB179B

Varicap diodes BB201 BB202 BB207

BB208-02

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4.3 Application notes


http://www.nxp.com/products/all_appnotes/ For the application notes we refer you to chapter 1 of this manual. For each application, we have given the recommended application notes which are available on the internet (with interactive link) or via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).

4.7 Datasheets
For all released products, datasheets are available on the NXP Semiconductors internet. Simply clicking on a product type (in this manual chapter 1 or 2) takes you to the corresponding product information page on the NXP Semiconductors website.

4.8 Design-in support 4.4 Demo boards


If you need special design-in support from our design-in engineers, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts), to pass on your request to the RF development team.

4.4.1 MMIC and SiGeC transistor demo boards


MMIC demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter:Web Links and Contacts).
BFU725F BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748 BGA2771 BGA2776 BGA6289 BGA6489 BGA6589 BGM1011 BGM1012 BGM1013 BGM1014 BGU7003

4.5 Samples of products in development


For development samples, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts) to order the latest versions at the RF development team.

4.6 Samples of released products


For all released products, samples are available in the sample warehouse. Look on the home page of the NXP web site for the link to the online sample store: www.nxp.com
NXP Semiconductors RF Manual 11th edition 69

5. Cross-references & replacements


NXP cross-references: http://www.nxp.com/search/index.html NXP end-of-life: http://www.nxp.com/products/eol/

5.1 Cross-references: Manufacturer types versus NXP types


In alphabetical order of manufacturer type Abbreviations: BS diode CATV PD CATV PPA CATV PPA/HG CATV RA FET Standard MMIC Varicap WB trs 1-4 WB trs 5-7
Manufacturer type 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239 1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271

Band Switch Diode CATV Power Doubler CATV Push Pull Amplifier CATV Push Pull Amplifier High Gain CATV Reverse Amplifier Field Effect Transistor Standard in Industry Monolithic Microwave Integrated Circuit Varicap Diode Wideband Transistor 1-4 generation Wideband Transistor 5-7 generation
Manufacturer Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba NXP type BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 Product family BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Manufacturer type 1SV278 1SV279 1SV282 1SV282 1SV282 1SV283 1SV283 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308 1SV322 1SV322 1SV322 1T362 1T362 A 1T363 A 1T368 A 1T369 1T379 1T397 1T399 1T402 1T402 1T403 Manufacturer Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony Sony NXP type BB179 BB179 BB178 BB178 BB187 BB187 BB178 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02 BB202LX BB202LX BB202LX BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB179B BB178 Product family Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap

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Manufacturer type 1T403 1T404A 1T405 A 1T406 1T408 2F1G20DS 2F1G20P 2F1G22DS 2F1G23P 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N3330 2N3331 2N4220 2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 2SC5624

Manufacturer Sony Sony Sony Sony Sony RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas Renesas

NXP type BB178 BB187 BB187 BB182 BB187 CGD1042 CGY1041 CGD1042 CGY1043 CGD1044 BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C J176 J176 BF245A BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W BFG425W

Product family Varicap Varicap Varicap Varicap Varicap CATV PD CATV PP CATV PD CATV PP CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7

Manufacturer type 2SC5631 2SC6023 2SC6023 2SC6023 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508 3SK290 BA592 BA592 BA595 BA595 BA597 BA885 BA892 BA892 BA892-02V BA892-02V BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR64-02LRH BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR65-02L BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M BB403M BB501C

Manufacturer Renesas Sanyo Sanyo Sanyo Standard Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Renesas

NXP type BFQ540 BFG424W BFG424W BFG424W J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 J113 PMBFJ308 BF998WR BA591 BA591 BAP70-03 BAP51-03 BAP70-03 BAP70-03 BA891 BA891 BA277 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63LX BAP63LX BAP63-02 BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP64LX BAP64LX BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP65LX BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR

Product family WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 FET FET FET FET FET FET FET FET FET FET FET FET FET FET BS diode BS diode PIN diode PIN diode PIN diode PIN diode BS diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET

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Manufacturer type BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB659 BB664 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005S BF1009S BF1009SW BF2030 BF2030R BF2030W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998R BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP182 BFP183 BFP183R BFP193 BFP193W BFP196W BFP280 BFP405 BFP420

Manufacturer Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay Vishay Vishay Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon

NXP type BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB178 BB178 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105 BF1109 BF1109WR BF1101 BF1101R BF1101WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG540/X BFG540W/XR BFG540W/XR BFG505/X BFG410W BFG425W

Product family FET FET FET FET FET Varicap Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7

Manufacturer type BFP450 BFP740 BFP740 BFP740F BFP740F BFP81 BFP93A BFQ193 BFQ19S BFR106 BFR180 BFR180W BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR35AP BFR92AL BFR92P BFR92W BFR93A BFR93AL BFR93AW BFS17L BFS17P BFS17W BFS481 BFS483 BFT92 BFT93 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMY91 CXE1089Z CXE1089Z D5540185 D7540185 D7540200 D8640185 EC2C03C EC2C03C EC2C03C FSD273TA FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820

Manufacturer Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Motorola Infineon Infineon Infineon Motorola Infineon Motorola Infineon Infineon Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon RFMD RFMD Standard Standard Standard Standard Sanyo Sanyo Sanyo Skyworks Skyworks Skyworks Agilent Agilent Agilent Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent

NXP type BFG480W BFU725F BFU725F BFU725F BFU725F BFG92A/X BFG93A/X BFQ540 BFQ19 BFR106 BFR505 BFS505 BFR520 BFS520 PBR941 PRF947 PBR951 PRF957 PBR951 PRF957 BFR92A BFR92A BFR92A BFR92AW BFR93A BFR93A BFR93AW BFS17 BFS17A BFS17W BFM505 BFM520 BFT92 BFT93 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA2022 BGA6489 BGA6589 BGD502 BGD702 BGD704 BGD802 BB145B BB145B BB145B BB148 BB178 BB178 BFG410W BFG425W BFG480W BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03

Product family WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC MMIC MMIC CATV PD CATV PD CATV PD CATV PD Varicap Varicap Varicap Varicap Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode

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Manufacturer type HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315 HVU316 HVU363A HVU363A HVU363B INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AFS JDP2S02AFS JDP2S02AS JDP2S02AS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S JDS2S03S JDS2S03S KP2310R KV1700S KV1735S KV1735S KV1837K KV1841E KV1841E KV1841K KTK920BT KTK920T

Manufacturer Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Agilent Standard Standard Standard Standard Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toko Toko Toko Toko Toko Toko Toko Toko KEC KEC

NXP type BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148 BB131 BB148 BB153 BB148 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP51-02 BAP51-02 BAP51-02 BAP51-03 BAP51-03 BAP51-03 BAP63-02 BAP50-02 BA891 BA891 BA891 BAP64-04W BB201 BB201 BB207 BB202 BB156 BB208-03 BB208-02 BF1108 BF1108R

Product family PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode BS diode BS diode PIN diode varicap varicap varicap varicap varicap varicap varicap FET FET

Manufacturer type KV1835E MA2S077 MA2S357 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368 MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MC7712 MC7716 MC7722 MC7726 MC7852 MC7866 MCH4009 MCH4009 MCH4009 MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 MHW6182-6 MHW6182T MHW6185B MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C MHW7185C MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7222B

Manufacturer Toko Standard Matsushita Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Standard Standard Standard Standard Standard Standard Sanyo Sanyo Sanyo Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

NXP type BB199 BA277 BB187 BB178 BB178 BB179 BB182 BB202 BB153 BB148 BB131 BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGY785A BGY787 BGY785A BGY787 BGY885A BGD816L BFG424F BFG424F BFG424F BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A BGY685A BGY585A BGD502 BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGY787

Product family Varicap BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD WB trs 5-7 WB trs 5-7 WB trs 5-7 CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA

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Manufacturer type MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N MHW9146 MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MPF102 MPF970 MPF971 MRF577

Manufacturer Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola ON Semicond. ON Semicond. Freescale Freescale Standard Standard Standard Motorola

NXP type BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C BGY883 BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGY587B BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310 BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BF245A J174 J176 PRF957

Product family CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD FET FET FET WB trs 1-4

Manufacturer type MRF5811L MRF917 MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MT4S200T MT4S200T MT4S200T MT4S200U MT4S200U MT4S200U MT4S34U MV2109G MV2109G MV2109G NESG3032M14 NESG3032M14 PRF947B PZFJ108 PZFJ109 PZFJ110 R0605250L R0605300L R2005240 RN142G RN142S RN242CS RN731V RN739D RN739F S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740190 S8740220 S8740230 S949T S949TR S949TRW S974T S974TR S974TRW SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011

Manufacturer Motorola Motorola Motorola Motorola Motorola Motorola Motorola Motorola Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba ON Semicond. ON Semicond. ON Semicond. NEC NEC Motorola Standard Standard Standard Standard Standard Standard Rohm Rohm Rohm Rohm Rohm Rohm Vishay Vishay Vishay Standard Vishay Vishay Vishay Standard Standard Standard Standard Standard Vishay Vishay Vishay Vishay Vishay Vishay Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks

NXP type BFG93A/X BFQ67W BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BFG424W BFG424W BFG424W BFG425W BFG425W BFG425W BFG410W BB182LX BB182LX BB182LX BFU725F BFU725F PRF947 J108 J109 J110 BGY66B BGY68 BGY67A BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGD812 BGD814 BGD816L BF1109 BF1109R BF1109WR BF1109 BF1109R BF1109WR BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03

Product family WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 1-4 FET FET FET CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PD CATV PD CATV PD FET FET FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode

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Manufacturer type SMP1352-079 SMV1235-004 SMV1236-004 SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 SST4857 SST4859 SST4860 SST4861 SVC201SPA TBB1016 TMF3201J

Manufacturer Skyworks Skyworks Skyworks Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Sanyo Renesas AUK

NXP type BAP64-02 BB181 BB156 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR56 BSR57 BSR58 BB187 BF1204 BF1204

Product family PIN diode Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Varicap FET FET

Manufacturer type TMF3202Z TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TSDF54040 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112

Manufacturer AUK Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Vishay NEC NEC NEC NEC NEC NEC NEC NEC

NXP type BF1202WR PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BF1102 BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022

Product family FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC

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5.2 Cross-references: NXP discontinued types versus NXP replacement types


In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band Switch Diode CATV Community Antenna Television System FET Field Effect Transistor Varicap Varicap Diode WB trs Wideband Transistor OM Optical Module

NXP discontinued type BA277-01 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851A BF851C BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93

Product family NXP BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs

Replacement type NXP BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861A BF861C BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A

NXP discontinued type BFR93AT BFR93R BFU510 BFU540 BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/01 BGD502/01 BGD502/01 BGD502/03 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N BGD802N/07 BGD802N/07 BGD804N BGD804N BGD804N/02 BGD804N/02 BGD902 BGD902/07 BGD902L BGD904 BGD904/02 BGD904/07 BGD904L BGD906 BGD906/02 BGE847BO BGE847BO BGE847BO

Product family NXP WB trs WB trs WB trs WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV

Replacement type NXP BFR93AW BFR93A BFU725F BFU725F BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD812 BGD812 BGD814 BGD814 BGD814 BGD814 BGD812 BGD902 BGD812 BGD814 BGD904 BGD904 BGD814 CGD942C BGD906 BGO827 BGO827 BGO827

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NXP discontinued type BGE847BO/FC BGE847BO/FC0 BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO847/01 BGO847/01 BGO847/FC0 BGO847/FC0 BGO847/FC01 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/01 BGY587/02 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B BGY687B/02 BGY785A/07 BGY785A/09

Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV

Replacement type NXP BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO847 BGO847 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY785A BGY687 BGY687 BGE787B BGE787B BGY785A BGY785A

NXP discontinued type BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC CGD914 CGY887A CGY887B GD923 ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4890 ON4990 PMBT3640/AT PN4392 PN4393 SA5223 TZA3023 TZA3033 TZA3043 TZA3043B XSA5223 XSA5223

Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs FET FET OM OM OM OM OM OM OM

Replacement type NXP BGY785A BGY785A BGY885A BGY885A BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 CGD1042H CGY1043 CGY1047 CGD942C BGY687 BGY687 BGY585A BGY588N BGY588N BGY885A BGY587 BGY1085A BGD712 BGD712 BGD885 BFS17 PMBF4392 PMBF4393 TZA3036 TZA3026 TZA3036 TZA3046 TZA3046 TZA3036 TZA3036

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What if you could create a smaller form factor?


Look at UTLP packages, chapter 6

6. Packing and packaging information


6.1 Ultra thin leadless package platform
The unique design improves the packages electrical and thermal performance, and at the same time increases the moisture resistance. The chosen technology enables the reduction of added package material to a minimum, to come as close to a bare die as possible, without the bare die drawbacks in assembly. The resulting very low parasitics give a much better performance than leaded packages or even QFN type, enabling a design-in range, which includes high-frequency applications operating at up to 24 GHz. The product creation flexibility also supports packaging techniques like multiple dies, multiple leads with isolated die pads, re-routing and even fine pitch flip chip, which enhances RF performance even further. This enables more functionality in a smaller space. The result is a package, which increases customers design flexibility, reduces time to market and improves performance in a broad range of (mobile) applications. The package makes board assembly easier. The footprint is compatible with JETA standard SC-101 and because of the built-in standoff; both metal defined and solder resist defined PCB layouts can be used. To lessen the impact on the environment the package is already dark green and packed with as many as 15k units on a 7 reel. Ordering information Benefits Improved electrical, thermal and moisture resistance Reduced noise Easier board assembly More functionality in a smaller space Excellent RF performance. The NXP ultra-thin leadless package (UTLP) uses a patentpending etch process, enabling a lead frame with independent top and bottom layouts, giving maximum product creation flexibility. A very high silicon-to-footprint ratio, combined with a low profile of 0.4 mm makes the device perfectly suited for space constrained portable applications, like mobile communications, PDAs and handheld devices, increasing performance with same footprint.
Type number BAP50LX BAP51LX BAP63LX BAP64LX BAP65LX BAP1321LX BB202LX BB178LX BB179LX BB182LX BAP55LX BAP142LX Description Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Silicon PIN diode Low-voltage variable FM capacitance diode VHF-high variable capacitance diode UHF variable capacitance diode VHF-low variable capacitance diode Silicon PIN diode Silicon PIN diode Package SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T SOD882T

NXP ultra-thin leadless package (UTLP) platform for faster time-to-market, smaller form factor. Features Low height (0.4 mm) Small footprint Very flexible platform High silicon-to-footprint ratio Increased performance Footprint compatible with JETA standard SC-101 Very efficient packing (15k/7 reel) RoHs-compliant, green plastic.

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6.2 Packing quantities per package with relevant ordering code


Package SOD323/SC-76 package dimensions 1.7 x 1.25 x 0.9 Packing quantity 3,000 10,000 3,000 10,000 8,000 20,000 15,000 3,000 10,000 5,000 5,000 10,000 10,000 1,000 4,000 100 3,000 10,000 1,000 4,000 3,000 10,000 3,000 10,000 2,500 Product 12NC ending 115 135 115 135 315 335 315 215 235 112 412 116 126 115 135 112 215 235 115 135 115 135 115 135 118 Packing method 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch 12 mm tape and reel 12 mm tape and reel 4 tray/box 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel 12 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 16 mm tape and reel

SOD523/SC-79

1.2 x 0.8 x 0.6

SOD882T

1.0 x 0.6 x 0.4

SOT23

2.9 x 1.3 x 0.9

SOT54

4.6 x 3.9 x 5.1

SOT89/SC-62

4.5 x 2.5 x 1.5

SOT115

44.5 x 13.65 x 20.4

SOT143(N/R)

2.9 x 1.3 x 0.9

SOT223/SC-73

6.7 x 3.5 x 1.6

SOT323/SC-70

2.0 x 1.25 x 0.9

SOT343(N/R)

2.0 x 1.25 x 0.9

SOT360

6.5 x 4.4 x 0.9

SOT363/SC-88

2.0 x 1.25 x 0.9

3,000 10,000 2,500

115 135 118

8 mm tape and reel 8 mm tape and reel 12 mm tape and reel

SOT403

5.0 x 4.4 x 0.9

SOT416/SC-75 SOT616

1.6 x 0.8 x 0.75 4.0 x 4.0 x 0.85

3,000

115

8 mm tape and reel

6,000

118

12 mm tape and reel

SOT666 SOT724

1.6 x 1.2 x 0.7 8.7 x 3.9 x 1.47

4,000

115

8 mm tape and reel

2,500

118

16 mm tape and reel

SOT778

6.0 x 6.0 x 0.85

490 4,000 5000 5000

551 518 115 132

tray multiple trays 8 mm tape and reel 8mm tape and reel

SOT886 SOT891

1.45 x 1.0 x 0.5 1.0 x 1.0 x 0.5

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6.3 Marking codes list


Search online on marking code: http://www.nxp.com/package/ In alphabetical order of marking code In case a % is given in the marking code, it means this type can be assembled at different assembly sites. Instead of a %, you will find: p = made in Hong-Kong t = made in Malaysia W = made in China

Marking code %1W %3A %4A %5A %6G %6J %6K %6S %6W %6X %6Y %AB %M1 %M2 %M3 %M4 %M5 %M6 %M7 %M8 %M9 %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MN %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ 1 1B% 1C% 1N% 2 2A% 2L 2N 2R 4A 4K%

Type BAP51-05W BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 PMBF4392 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BF908 BF908R BF909 BF909R BF909A BF909AR BF904A BF904AR BSS83 BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BA277 BGA2717 BAP50-05 BAP70-04W BB182 BF862 BF1208 BF1206F BF1207F BF1208D BAP64-04

Package SOT323 SOT89 SOT89 SOT89 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOD523 SOT363 SOT23 SOT323 SOD523 SOT23 SOT666 SOT666 SOT666 SOT666 SOT23

Marking code 4L% 4W% 5K% 5W% 6F% 6K% 6W% 7 7K% 8 8K% 9 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 50% A1 A1 A1 A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7% A8 A8% A8%

Type BAP50-04 BAP64-04W BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BA891 BAP65-05 BB178 BAP70-05 BB179 BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA591 BB208-02 BGA2001 BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR BAP50-03 BFG325W/XR PMBFJ620

Package SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOD523 SOT23 SOD523 SOT23 SOD523 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD323 SOD523 SOT343 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343 SOD323 SOT343 SOT363

Marking code A9 B6B6% B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D2 D3 D4% E1% E1% E1% E2% E2% E3% E6% FB FF FG G2 G2% G3% G4% G5% K1 K2 K4 K5 K6 K7 K8 K9 L1 L2 L2 L2% L3 L3% L4

Type BAP70-03 BGA2715 BFU725F BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BAP63-03 BAP65-03 BFR30/B BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFG17A BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 BAP1321-02 BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX

Package SOD323 SOT363 SOT343F SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOD323 SOD323 SOT23 SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT143 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD882T SOD882T SOD523 SOT363 SOD882T SOT363 SOD882T

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Marking code L4% L5 L6 L6% L7 L8 L9% LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M3% M33 M34 M35 M6% M65 M66 M67 M84 M85 M86 MB MC MD ME MF MG MG% MH MH% MK ML MO%

Type BF1205 BB179BLX BB181LX BF1206 BB182LX BB187LX BF1208 BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BFT46 BF861A BF861B BF861C BF1205C BF545A BF545B BF545C BF556A BF556B BF556C BF998WR BF904WR BF908WR BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998

Package SOT363 SOD882T SOD882T SOT363 SOD882T SOD882T SOT363 SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT343 SOT343 SOT343 SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143

Marking code MO% N N0 N0% N0% N1 N2 N2% N2% N3 N4 N4 N4% N6% N7 N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6

Type BF998R BB181 BFR505T BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFG520W BFG520W/X BFQ540 BFS540 BFS25A BFG540W/X BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BFG21W BB131 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W

Package SOT143 SOD523 SOT416 SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT343 SOT343 SOT89 SOT323 SOT323 SOT343 SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT343 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343

Marking code P7 P8 P9 PB PC PE PF PL R2% R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% T5 V1 V1% V10 V2% V2% V3% V4% V6% V8 W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1%

Type BB147 BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BB201 BFG10W/X BFG25AW/X BFT25 BFT25A BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W

Package SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT343 SOT343 SOT23 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323

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7. Contacts and web links


How to contact your authorized distributor or local NXP representative?

Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist South America: http://www.nxp.com/profile/sales/southamerica_dist NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP optical networking: http://www.nxp.com/opticalnetworking NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/all_appnotes NXP cross-references: http://www.nxp.com/products/xref NXP green packaging: http://www.nxp.com/green_roadmap NXP end-of-life: http://www.nxp.com/products/eol NXP Quality Handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP packaging: http://www.nxp.com/package NXP sales offices and distributors: http://www.nxp.com/profile/sales

Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica South America: http://www.nxp.com/profile/sales/southamerica

Web links NXP Semiconductors: http://www.nxp.com NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes

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8. Product index
Type
1PS10SB82 1PS66SB17 1PS66SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS76SB17 1PS79SB17 1PS88SB82 BA277 BA591 BA792 BA891 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP51LX BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM BAT17 BAT18 BB131 BB135 BB145B BB148 BB149 BB149A BB152 BB153 BB156 BB178 BB178LX BB179 Portfolio chapter 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.1 3.2.1 3.2.1 3.2.1 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.4 3.2.3 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1

Type
BB179B BB179BLX BB179LX BB181 BB181LX BB182 BB182LX BB184 BB184LX BB185LX BB187 BB187LX BB198 BB199 BB201 BB202 BB202LX BB207 BB208-02 BB208-03 BBY40 BF1100 BF1100R BF1100WR BF1101 BF1101R BF1101WR BF1102 BF1105 BF1105R BF1105WR BF1107 BF11085) BF1108R5) BF1109 BF1109R BF1109WR BF1201 BF1201R BF1201WR BF1202 BF1202R BF1202WR BF1203 BF1204 BF1205 BF1205C BF1206 BF1206 BF1207 BF1208 BF1208D BF1210 BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 BF245A BF245B BF245C BF5101) BF5111) BF5121) BF5131) BF545A BF545B BF545C

Portfolio chapter 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1

Type
BF556A BF556B BF556C BF861A BF861B BF861C BF862 BF904 BF904R BF904WR BF908 BF908R BF908WR BF909 BF909R BF909WR BF991 BF992 BF994S BF996S BF998 BF998R BF998WR BFG10(X) BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505(/X) BFG505W/X BFG520(/X) BFG520W(/X) BFG540(/X) BFG540W(/X/XR) BFG541 BFG590(/X) BFG591 BFG67(/X) BFG92A(/X) BFG93A(/X) BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ540 BFQ591 BFQ67 BFQ67W BFR106 BFR30 BFR31 BFR505 BFR505T

Portfolio chapter 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1

Type
BFR520 BFR520T BFR540 BFR92A BFR92AW BFR93A(R) BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT46 BFT92 BFT92W BFT93 BFT93W BFU725F BGA2001 BGA2003 BGA2011 BGA2012 BGA2022 BGA2031/1 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2717 BGA2748 BGA2771 BGA2776 BGA6289 BGA6489 BGA6589 BGD502 BGD702 BGD702N BGD704 BGD712 BGD712C BGD714 BGD802 BGD804 BGD812 BGD814 BGD816L BGD885 BGE787B BGE788 BGE788C BGE885 BGM1011 BGM1012 BGM1013 BGM1014 BGO807 BGO807/FC0 BGO807/SC0 BGO807C BGO807C/FC0 BGO807C/SC0 BGO827 BGO827/SC0

Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.4.1 3.4.1 3.4.1 3.4.1 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4

Type
BGU7003 BGU7004 BGU7005 BGY1085A BGY585A BGY587 BGY587B BGY588C BGY588N BGY66B BGY67 BGY67A BGY68 BGY685A BGY687 BGY785A BGY787 BGY835C BGY883 BGY885A BGY887 BGY887B BGY888 BLT50 BLT70 BLT80 BLT81 BSR56 BSR57 BSR58 BSS83 CGD1042 CGD1042H CGD1044 CGD1044H CGD914 CGD923 CGD942C CGD944C CGY887A CGY887B CGY888C J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 OM7650 OM7670 PBR941 PBR951 PMBD353 PMBD354 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176

Portfolio chapter 3.4.1 3.4.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.1 3.6.1 3.6.1 3.6.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.5.1 3.5.2 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.6.2 3.6.2 3.3.1 3.3.1 3.2.4 3.2.4 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1

Type
PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN TFF1004HN TFF1006HN TZA3013 TZA3026 TZA3036 TZA3046 UAF3000TS UAF4000TS

Portfolio chapter 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.4.2 3.4.2 3.4.2 3.4.2 3.7.1 3.7.1 3.7.1 3.7.1 3.4.2 3.4.2

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www.nxp.com
2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: December 2008 Document order number: 9397 750 16646 Printed in the Netherlands

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