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2SC5250

Silicon NPN Triple Diffused Planar

Preliminary

Application
Character display horizontal deflection output

Features
High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 sec (typ) Built-in damper diode type Isolated package TO-3PFM (N)

Outline
TO-3PFM (N)

1. Base 2. Collector 3. Emitter

1 ID

2SC5250
Absolute Maximum Ratings (Ta = 25C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at TC = 25C Symbol VCES VEBO IC IC(peak) PC* Tj Tstg ID
1

Ratings 1500 6 8 16 50 150 55 to +150 8

Unit V V A A W C C A

Electrical Characteristics (Ta = 25C)


Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Forward voltage of damper diode Fall time Symbol V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) VECF tf Min 6 6 4 Typ 0.2 Max 500 25 7 5 1.5 2 0.4 V V V sec Unit V A Test conditions IE = 400 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A IF = 8 A ICP = 5 A, IB1 = 1 A, fH = 31.5 kHz

2SC5250
Collector Power Dissipation vs. Case Temperature Pc (W) Collector Power Dissipation 80

60

40

20

50 100 Case Temperature

150 Tc (C)

200

Area of Safe Operation 25 I C (A)

20 (400 V, 16 A)

Collector Current

15

10 (600 V, 6 A) 5 I B2 = 1 A L = 180 H duty 1% (800 V, 3 A) (1500 V, 0.5 mA)

800 1200 1600 2000 400 0 Collector to Emitter Voltage V CE (V)

Typical Output Characteristics 5.0


1.0 A 0.9 A 0.8 A 0.7 A 0.6 A 0.5 A 0.4 A 0.3 A
0.2 A

Collector Current

I C (A) 2.5

0.1 A
Tc = 25 C
IB=0

5 10 Collector to Emitter Voltage V CE (V)

2SC5250
DC Current Transfer Ratio vs. Collector Current 100 h FE 50 75 C 20 10 5 2 1 0.1 VCE = 5 V 0.2 0.5 1 Collector Current 2 5 I C (A) 10 Tc = 25 C 25 C

DC Current Transfer Ratio

Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 2 1 Tc = 25 C 25 C IC / I B= 4

0.5 0.2

0.1

75 C 0.2 0.5 1 2 5 Collector Current I C (A) Base to Emitter Saturation Voltage vs. Collector Current 10

0.05 0.1

10 Base to Emitter Saturetion Voltage V BE(sat) (V) 5 2 1 75 C I C/ I B= 4

Tc = 25C 25 C

0.5 0.2 0.1

0.2 0.5 1 2 5 Collector Current I C (A)

10

2SC5250
Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 Tc = 25 C

I C= 3 A 4 A

5A

0 0.1

0.2

0.5 1 Base Current

2 5 I B (A)

10

Fall Time vs. Base Current 1.0 I CP = 5 A f H = 31.5 kHz

0.8 Fall Time t f (s)

0.6

0.4

0.2

0.4

0.8

1.2

1.6

2.0

Base Current I B1 (A) Storage Time vs. Base Current 10 I CP = 5 A f H = 31.5 kHz

Storage Time t stg (s)

0.4

0.8

1.2

1.6

2.0

Base Current I B1 (A)

2SC5250

When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachis permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachis semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachis products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachis sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachis products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.

Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207

Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Mnchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00

Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322

Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071

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