BF961

Vishay Semiconductors

NChannel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Electrostatic sensitive device. Observe precautions for handling.

Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647

D High AGC-range D Low feedback capacitance D Low input capacitance

G2 G1 D

BF961 Marking: BF961 Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2

12623

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg 55 to +150 Unit V mA mA mW C C

Tamb 60 C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W

Document Number 85002 Rev. 3, 20-Jan-99

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BF961
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, VG1S = VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V

14 14 100 100 20 10.5 20 3.5 3.5

Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA

Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps DGps F Min 12 Typ 15 3.7 1.6 25 1.6 20 50 1.8 Max Unit mS pF pF fF pF dB dB dB

VG1S = 0, VG2S = 4 V

GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to 2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz

2.5

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Document Number 85002 Rev. 3, 20-Jan-99

BF961
Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified)
Y21S Forward Transadmittance ( mS ) 300 P tot Total Power Dissipation ( mW ) 250 200 150 100 50 0 0
96 12159

22 20 18 16 14 12 10 8 6 4 2 0V 4V 3V 2V 1V VDS=15V f=1MHz VG2S=5V

20

40

60

80

100 120 140 160

96 12162

0 2.01.51.00.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VG1S Gate 1 Source Voltage ( V )

Tamb Ambient Temperature ( C )

Figure 1. Total Power Dissipation vs. Ambient Temperature

22 20 18 ID Drain Current ( mA ) 16 14 12 10 8 6 4 2 0 0
96 12160

Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage

4.0 C issg1 Gate 1 Input Capacitance ( pF )

VG1S= 0.6V 0.4V 0.2V 0 0.2V 0.4V 0.6V 0.8V 2 4 6 8 10 12 14 16 18 20 22 24

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VG1S Gate 1 Source Voltage ( V ) VDS=15V VG2S=4V f=1MHz

VDS Drain Source Voltage ( V )

96 12163

Figure 2. Drain Current vs. Drain Source Voltage

24 22 20 18 16 14 12 10 8 6 4 2 0 2
96 12161

Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage

4.0 C issg2 Gate 2 Input Capacitance ( pF )

Y21S Forward Transadmittance ( mS )

VDS=15V IDS=10mA

3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 2 1 0 1 2 3

VG1S=0.5V 0V

VDS=15V VG1S=0 f=1MHz

0.5V

6
96 12164

VG2S Gate 2 Source Voltage ( V )

VG2S Gate 2 Source Voltage ( V )

Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage

Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage

Document Number 85002 Rev. 3, 20-Jan-99

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BF961
Vishay Semiconductors
3.0 C oss Output Capacitance ( pF ) 2.5 2.0 1.5 1.0 0.5 0 0
96 12165

10 VG2S=4V f=1MHz 5 0 Im ( y 21 ) ( mS ) 5 10 15 20 25 700MHz 30 2 4 6 8 10 12 14 16 18 20 22

96 12167

VDS=15V VG2S=4V f=50...700MHz ID=5mA 10mA 20mA

f=50MHz 100MHz 200MHz 300MHz 400MHz 500MHz

600MHz

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Re (y21) ( mS )

VDS Drain Source Voltage ( V )

Figure 7. Output Capacitance vs. Drain Source Voltage

18 16 14 Im ( y 11 ) ( mS ) 12 10 8 6 4 2 0 0
96 12166

Figure 9. Short Circuit Forward Transfer Admittance

7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
96 12168

f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 0.2 0.4 0.6 ID=20mA VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 0.8 1.0 1.2 1.4

f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 1 2 3 4 5 VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 6 7 8 9 10 Im ( y 22 ) ( mS )

ID=5mA

Re (y11) ( mS )

Re (y22) ( mS )

Figure 8. Short Circuit Input Admittance

Figure 10. Short Circuit Output Admittance

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Document Number 85002 Rev. 3, 20-Jan-99

BF961
Vishay Semiconductors VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 S11
j 120 j0.5 j2 150 j0.2 j5 30 300

W
90 60

S12

0.2 0.5 1 2 5 700 MHz j0.5 500 300 j2 j

100

50

600 180 700MHz 0.04 0.08 0

j0.2

j5 150 30

120
12 920 12 921

90

60

Figure 11. Input reflection coefficient

Figure 13. Reverse transmission coefficient

S21
120 90 60

S22
j j0.5 30 j0.2 700MHz 0.8 1.6 0 0 j5 j2

400 200 50 180

0.2 0.5 1 2 5 700 MHz j0.5 j2 j

100

150

ID= 20mA 10mA 30 5mA 30

j0.2

300 500

j5

120
12 922

90

60
12 923

Figure 12. Forward transmission coefficient

Figure 14. Output reflection coefficient

Document Number 85002 Rev. 3, 20-Jan-99

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BF961
Vishay Semiconductors Dimensions in mm

96 12242

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Document Number 85002 Rev. 3, 20-Jan-99

BF961
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85002 Rev. 3, 20-Jan-99

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