SD403C..

C Series
Vishay Semiconductors

Fast Recovery Diodes (Hockey PUK Version), 430 A

FEATURES
High power FAST recovery diode series 1.0 to 1.5 s recovery time High voltage ratings up to 1600 V High current capability Optimized turn-on and turn-off characteristics
DO-200AA

Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AA Maximum junction temperature 125 C

PRODUCT SUMMARY
IF(AV) 430 A

Lead (Pb)-free

TYPICAL APPLICATIONS
Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER IF(AV) TEST CONDITIONS VALUES 430 Ths 55 675 Ths 50 Hz 60 Hz 50 Hz 60 Hz Range 25 6180 6470 191 175 400 to 1600 1.0 to 1.5 TJ 25 - 40 to 125 UNITS A C A C A

IF(RMS) IFSM I2 t VRRM trr TJ

kA2s V s C

Document Number: 93175 Revision: 04-Aug-08

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SD403C..C Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 SD403C..S10C 08 10 12 SD403C..S15C 14 16 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 1500 1700 35 IRRM MAXIMUM AT TJ = 125 C mA

Fast Recovery Diodes (Hockey PUK Version), 430 A

FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle , non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 430 (210) 55 (75) 675 6180 6470 5200 Sinusoidal half wave, initial TJ = TJ maximum 5445 191 175 135 123 1910 1.00 1.20 0.56 0.70 1.83 kA2s V m V kA2s A UNITS A C

t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum Ipk = 1350 A, TJ = 25 C; tp = 10 ms sinusoidal wave

RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM ( s) 1.0 1.5 TEST CONDITIONS Ipk SQUARE PULSE (A) 750 TYPICAL VALUES AT TJ = 125 C
IFM

dI/dt (A/ s)

Vr (V)

trr AT 25 % IRRM ( s) 2.4 2.9

Qrr ( C) 52 90

Irr (A)
dir dt

trr t Qrr IRM(REC)

S10 S15

25

- 30

33 44

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Document Number: 93175 Revision: 04-Aug-08

SD403C..C Series
Fast Recovery Diodes (Hockey PUK Version), 430 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 C - 40 to 150 0.16 K/W 0.08 4900 (500) 70 DO-200AA N (kg) g UNITS

Vishay Semiconductors

RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180 120 90 60 30 0.010 0.012 0.016 0.024 0.042 DOUBLE SIDE 0.011 0.013 0.016 0.024 0.042 SINGLE SIDE 0.008 0.013 0.018 0.025 0.042 DOUBLE SIDE 0.008 0.013 0.018 0.025 0.042 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC

Document Number: 93175 Revision: 04-Aug-08

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SD403C..C Series
Vishay Semiconductors
Fast Recovery Diodes (Hockey PUK Version), 430 A
130 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C ) S D 4 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .1 6 K / W 120 110 100 90 80 70 60 50 40 0 100 2 00 30 0 4 00 5 00 600 7 00 A v e ra g e F o rw a r d C u rre n t (A ) 30 60 90 1 2 0 1 8 0 DC
C o ndu c tio n Pe rio d

130 M a x im u m A llo w a b le He a t sin k T e m p e ra t ure (C ) 120 110 100 90 80 30 70 0 50 100 1 50 2 00 2 50 A v e ra g e F o rw a r d C u rre n t (A ) 60 90 1 20 1 80

C o nduc tio n An g le

SD 4 0 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K / W

Fig. 1 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

130 M a x im um A llo w a b le H e at sin k T e m p e ra tu re ( C ) Maxim um Average Forw ard Pow er Loss (W ) 120 110 100
C o ndu ctio n Pe rio d

800 S D 4 0 3 C ..C Se rie s (S in gle Sid e C o o le d ) R thJ-h s (D C ) = 0 .1 6 K /W 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A)
C o ndu c tio n Ang le

180 120 90 60 30

RM S Limit

90 80 70 60 50 0 50 100 150 20 0 2 50 30 0 35 0 A v e ra g e F o r w a rd C u rr e n t (A ) 30 60 9 0 1 2 0 180

DC

SD403C..C Series TJ = 125C

Fig. 2 - Current Ratings Characteristics

Fig. 5 - Forward Power Loss Characteristics

Maxim um Allowable Heatsink Tempera ture (C )

120 110 100 90 80

SD403C..C Series (Doub le Side Cooled) R th J-hs (DC) = 0.08 K/W

M a x im um A v e ra g e Fo rw a rd Po w e r Lo ss (W )

130

1 10 0 1 00 0 90 0 80 0 70 0 60 0 50 0 40 0 30 0 20 0 10 0 0 0 1 00 20 0 3 00 400 5 00 60 0 7 00 A v e ra g e F o rw a rd C u rre n t (A )
C o ndu ctio n Pe rio d

DC 1 8 0 1 2 0 90 60 30 RM S Lim it

C o nd uctio n A ng le

30 70 60 50 0

60

90

120 180

SD 4 0 3 C ..C S e r ie s TJ = 1 2 5 C

50 100 150 200 250 300 350 400 450 Average Forward Curren t (A)

Fig. 3 - Current Ratings Characteristics

Fig. 6 - Forward Power Loss Characteristics

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SD403C..C Series
Fast Recovery Diodes (Hockey PUK Version), 430 A
6 00 0 P e a k H a lf Sin e W a v e F o rw a rd C u rre n t (A ) 5 50 0 5 00 0 4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 1 10 1 00
Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N )

Vishay Semiconductors

T ra n sie n t T h e rm al Im pe d an c e Z thJ-hs ( K / W )

A t A n y R a t e d Lo a d C o n d it io n A n d W it h R a t e d V RR MA p p lie d Fo llo w in g S u rg e . In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s

1 SD 4 0 3 C ..C S e rie s

0 .1

S te a d y St a t e V a lu e 0. 01 R t hJ-hs = 0 .1 6 K /W ( S in g le Sid e C o o le d ) R thJ- hs = 0 .0 8 K /W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0

S D 4 0 3 C ..C S e rie s

S q u a re W a v e P u lse D u ra tio n ( s)

Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

7000 Peak H alf Sine W ave Forwa rd Current (A) 6000 5000 4000 3000 2000

M a x im u m R e ve rse R e c o v e ry T im e - T rr ( s)

Maxim um Non Rep etitive Surge Current Versus Pulse Train D uration . Initial T J = 125C No Voltage Reapplied Rated V RR MReapplied

2 .8 2 .6 2 .4 2 .2
40 0 A

SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V
I FM = 7 50 A Squa re Pulse

2 1 .8 1 .6 10 100
20 0 A

SD 403C..C Series 0 .1 Pulse Train Duration (s) 1

1000 0 .0 1

Rat e O f Fall O f Forw ard Current - d i/dt (A /s)

Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

Fig. 11 - Recovery Time Characteristics

1 0 0 00 M a xim um R e v e rse R e c o v e ry C h a rg e - Q rr ( C ) T J = 2 5 C
Ins tan ta ne o u s Fo rw ard C urr e nt ( A )

14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V

200 A 4 00 A I FM = 7 50 A Squa re Pulse

T J = 1 2 5 C 1000

1 00

SD 4 0 3 C ..C Se r ie s

10 0 1 2 3 4 5 6 7 In st an ta n e o us Fo rw ar d V o lta ge ( V )

R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /s)

Fig. 9 - Forward Voltage Drop Characteristics

Fig. 12 - Recovery Charge Characteristics

Document Number: 93175 Revision: 04-Aug-08

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SD403C..C Series
Vishay Semiconductors
Fast Recovery Diodes (Hockey PUK Version), 430 A
170
I FM = 750 A

90
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( C )

Maxim um Rev erse Recov ery Cur ren t - Irr (A)

80 70 60 50 40 30 20 10

160 150 140 130 120 110 100 90 80 70 60 50 0 20

I FM = 75 0 A Sq uare Pulse

Squa re Pu lse 4 00 A 20 0 A

40 0 A

20 0 A

SD40 3C..S10C Series TJ = 12 5 C; V r = 30V 10 20 30 4 0 50 60 7 0 80 9 0 10 0

SD 4 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V 40 60 80 10 0

Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /s)

Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/s)

Fig. 13 - Recovery Current Characteristics

Fig. 15 - Recovery Charge Characteristics

3 .5 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( s) S D 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 C ; V r = 3 0 V 3

I FM = 750 A Sq uare Pulse

130 M a x im um Re v e rse Re c o v e ry C u rre n t - Irr (A ) 120 110 100 90 80 70 60 50 40 30 20 10 1 0 20 3 0 40 5 0 60 70 80 9 0 10 0 SD 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 C ; V r = 3 0 V

2 00 A 40 0 A I FM = 750 A Squ are Pu lse

2 .5
400 A

2
2 00 A

1 .5 10 10 0

Rate O f Fall O f Fo rw ard C urren t - di/d t (A/s)

R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/s)

Fig. 14 - Recovery Time Characteristics

Fig. 16 - Recovery Current Characteristics

1E 4
20 jo u le s p e r p ulse 1 2 4 10

20 jo ule s p er pulse 1 0.2 0.1 0. 04 0.4 2 4 10

Pe a k Fo rw ard C u rre n t (A )

0 .4

1E 3

0.2 0 .1 0. 04 0 .02

1E 2

0 .01
SD 4 0 3 C..S1 0C Se rie s T rape zo idal Pulse TJ = 1 2 5 C, V R R M = 8 0 0 V d v/ dt = 1 0 0 0 V/ s ; d i/ dt= 5 0 A / s

tp

SD 40 3 C ..S1 0 C S e ri es Si nu soi dal Pul se T J = 1 2 5C , V RRM = 8 0 0 V d v/ d t = 10 0 0V / s

tp

1E 1 1E 1

1 E2

1E3

1E 4

1E1

1 E2

1E3

1E4

P u lse B a se w id t h ( s)

P ulse B a se w id t h ( s)

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics

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SD403C..C Series
Fast Recovery Diodes (Hockey PUK Version), 430 A
1E4
2 0 jo ule s pe r pu lse 2 4 10

Vishay Semiconductors

P e a k F o r w a rd C u rre n t (A )

1 0.4

1 0 .4 0 .2 0 .1

10

2 0 jo ules pe r pulse

1E3
0. 1 0 .04

0.2

1E2

0 .02
SD 4 0 3. .S15 C Se ri es Si nu so idal Pu ls e T J = 1 2 5C , V R R M = 1 1 2 0 V dv / d t = 10 0 0 V/ s SD 4 0 3 C..S1 5C Se rie s Trape zo id al Puls e TJ = 1 2 5 C, V RR M = 11 20 V d v/ dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s

tp

tp

1E1 1E1

1 E2

1 E3

1 E4

1 E1

1E2

1E3

1 E4

Pu lse Ba se w id t h ( s)

P u lse Ba se w id t h ( s)

Fig. 18 - Maximum Total Energy Per Pulse Characteristics

ORDERING INFORMATION TABLE

Device code

SD
1
1 2 3 4 5 6 7

40
2 Diode

3
3

C
4

16
5

S15
6

C
7

Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case DO-200AA

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95248

Document Number: 93175 Revision: 04-Aug-08

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Outline Dimensions
Vishay Semiconductors

DO-200AA
DIMENSIONS in millimeters (inches)

3.5 (0.14) 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends

19 (0.75) DIA. MAX. 2 places

0.3 (0.01) MIN. both ends

42 (1.65) DIA. MAX. 14.4 (0.57) 38 (1.50) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) 13.7 (0.54)

Document Number: 95248 Revision: 06-Nov-07

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