MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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High Voltage Transistors

NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

BSS71

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 200 200 6.0 0.5 0.5 2.86 2.5 14.3 65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C CASE 2203, STYLE 1 TO18 (TO206AA)
3 2

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RqJC Max 70 Unit C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)(1) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 150 Vdc, IB = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO 200 200 6.0 50 500 50 Vdc Vdc Vdc nAdc nAdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc)(1) (IC = 30 mAdc, VCE = 10 Vdc)(1) CollectorEmitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) BaseEmitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) 1. Pulse Test: Pulse Width hFE 20 30 50 40 VCE(sat) VBE(sat) 0.7 0.8 0.85 0.8 0.9 1.0 0.15 0.25 0.35 0.3 0.4 0.5 Vdc 40 45 120 140 250 Vdc

v 300 ms, Duty Cycle v 2.0%.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997

BSS71
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 20 MHz) Output Capacitance (IE = 0, VCB = 20 Vdc, f = 1.0 MHz) Input Capacitance (IC = 0, VEB = 0.5 Vdc, f = 1.0 MHz) TurnOn Time (IB1 = 10 mAdc, IC = 50 mAdc, VCC = 100 Vdc) TurnOff Time (IB2 = 10 mAdc, IC = 50 mAdc, VCC = 100 Vdc) ft Cob Cib ton toff 50 70 3.5 45 100 400 200 MHz pF pF ns ns

VCE = 10 V hFE, DC CURRENT GAIN 200 150 100 55C 50 TJ = +125C C, CAPACITANCE (pF)

100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb

TJ = 25C

+ 25C

Ccb

20 10 0.1

0.5

1.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

0.5

1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50 100

200

Figure 1. DC Current Gain

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

Figure 2. Capacitances

100 IC, COLLECTOR CURRENT (mA) 70 50 TJ = 25C VCE = 20 V f = 20 MHz

500

100 s

200 dc 100 50 2.5 WATT THERMAL LIMITATION @ TC = 25C 1.0 ms

30 20

20 10 5.0 3.0 BSS71

10 1.0

2.0 3.0

5.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

100

5.0

10 20 30 50 100 200 300 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 3. CurrentGain Bandwidth Product

Figure 4. ActiveRegion Safe Operating Area

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BSS71
V, TEMPERATURE COEFFICIENTS (mV/C) 14 12 V, VOLTAGE (VOLTS) 10 0.08 0.06 0.04 0.02 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC/IB = 5 50 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VB for VBE 55C to 25C 55C to 125C VC for VCE(sat) IC IB

+ 10
25C to 125C

Figure 5. On Voltages

Figure 6. Temperature Coefficients

1.0K 500 VCE = 100 V IC/IB = 5.0 TJ = 25C tr 100 50 t, TIME (ns) td

1.0K 500 ts

200 t, TIME (ns)

200 100 50

tf

20 10 1.0

20 10 1.0

VCE = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C

2.0

5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

2.0

5.0 10 20 IC, COLLECTOR CURRENT (mA)

50

100

Figure 7. TurnOn Time

Figure 8. TurnOff Time

DUTY CYCLE < 1% tr, tf < 5 ns Vin 10 s 0V 1 k 0.1 F 1 k 50 VIN VBB ton 10.6 V toff 20 V 9.2 V 1N914 VBB VCC = 100 V 2.2 k Vin 20 k Vout SAMPLING SCOPE 50

Figure 9. Switching Time Test Circuit

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BSS71
PACKAGE DIMENSIONS

A B E C T F P L K
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 0.250 45 _BSC 0.050 BSC 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 6.35 45_BSC 1.27 BSC 1.27

D 3 PL 0.36 (0.014) N H
1 2 3 M

T A

N G

CASE 2203 (TO206AA) ISSUE R

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BSS71/D Motorola SmallSignal Transistors, FETs and Diodes Device Data