Philips Semiconductors

Product specification

Triacs

BT138F series

GENERAL DESCRIPTION
Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA

SYMBOL PARAMETER BT138FBT138FBT138FRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 12 90 600 600F 600G 600 12 90 800 800F 800G 800 12 90

VDRM IT(RMS) ITSM

V A A

PINNING - SOT186
PIN 1 2 3 DESCRIPTION main terminal 1

PIN CONFIGURATION
case

SYMBOL

T2
main terminal 2 gate
1 2 3

T1

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 56 C full sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 12 90 100 40 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. February 1996 1 Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

12

pF

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT138FVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 10 22 7 20 8 10 6 1.4 0.7 0.4 0.1 35 35 35 70 40 60 40 60 30 MAX. ...F 25 25 25 70 40 60 40 60 30 1.65 1.5 0.5 ...G 50 50 50 100 60 90 60 90 60 mA mA mA mA mA mA mA mA mA V V V mA UNIT

IL

Latching current

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of change of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT138FVDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 12 A; dIcom/dt = 5.4 A/ms; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s

dVcom/dt

10

20

V/s

tgt

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

20

Ptot / W

BT138

Ths(max) / C = 180

45

15

IT(RMS) / A

BT138X

56 C
65

15

120 90 60

10
85

10

30

5
5 105

5 IT(RMS) / A

10

125 15

0 -50

50 Ths / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
BT138

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.

1000

ITSM / A

25

IT(RMS) / A

BT138

20

15
100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time

10

Tj initial = 125 C max 100us 1ms T/s 10ms 100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A BT138 IT 80 T ITSM time

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 56C.
VGT(Tj) VGT(25 C)

100

1.6 1.4 1.2 1

BT136

Tj initial = 125 C max 60

40

0.8
20

0.6 0.4 -50

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

3 2.5 2 1.5 1

IGT(Tj) IGT(25 C)

BT138 T2+ G+ T2+ GT2- GT2- G+

40

IT / A Tj = 125 C Tj = 25 C

BT138 typ max

30

Vo = 1.175 V Rs = 0.0316 Ohms

20

10

0.5 0 -50
0

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

3 2.5 2 1.5 1

TRIAC

10

Zth j-hs (K/W)

BT138

with heatsink compound without heatsink compound 1 unidirectional 0.1

P D tp

bidirectional

0.01

0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
dV/dt (V/us) off-state dV/dt limit
BT138...G SERIES BT138 SERIES

3 2.5 2 1.5 1 0.5

TRIAC

1000

100

BT138...F SERIES

dIcom/dt = 15 A/ms 10

12

9.1

5.4

4.2

0 -50

50 Tj / C

100

150

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

10.2 max 5.7 max 3.2 3.0

0.9 0.5

4.4 max 2.9 max 4.4 4.0

7.9 7.5 17 max

seating plane

3.5 max not tinned

4.4

13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3

0.55 max

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT138F series

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100