TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

Designed for generalpurpose amplifier and low frequency switching applications.

Features http://onsemi.com

High DC Current Gain

Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V CollectorEmitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 = 80 Vdc (Min) TIP141, TIP146 = 100 Vdc (Min) TIP142, TIP147 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor These are PbFree Devices*

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60100 VOLTS, 125 WATTS

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC TIP140 TIP145 60 60 TIP141 TIP146 80 80 5.0 10 15 0.5 125 65 to +150 TIP142 TIP147 100 100 Unit Vdc Vdc Vdc Adc

SOT93 (TO218) CASE 340D STYLE 1

TO247 CASE 340L STYLE 3

IB PD TJ, Tstg

Adc W _C

NOTE: Effective June 2012 this device will be available only in the TO247 package. Reference FPCN# 16827.

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Symbol RqJC RqJA Max 1.0 35.7 Unit C/W C/W

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 5 ms, v 10% Duty Cycle.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2012

May, 2012 Rev. 6

Publication Order Number: TIP140/D

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

MARKING DIAGRAMS
TO247 TO218

TIP14x AYWWG

AYWWG TIP14x 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR = = = = = Device Code Assembly Location Year Work Week PbFree Package

1 BASE

2 COLLECTOR TIP14x A Y WW G

DARLINGTON SCHEMATICS
NPN TIP140 TIP141 TIP142 BASE COLLECTOR PNP TIP145 TIP146 TIP147 BASE COLLECTOR

8.0 k

40

8.0 k

40

EMITTER

EMITTER

ORDERING INFORMATION
Device TIP140G TIP141G TIP142G TIP145G TIP146G TIP147G TIP140G TIP141G TIP142G TIP145G TIP146G TIP147G Package SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) SOT93 (TO218) (PbFree) TO247 (PbFree) TO247 (PbFree) TO247 (PbFree) TO247 (PbFree) TO247 (PbFree) TO247 (PbFree) Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Vdc CollectorEmitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 VCEO(sus) 60 80 100 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 ICEO mA 2.0 2.0 2.0 1.0 1.0 1.0 20 TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 ICBO mA Emitter Cutoff Current (VBE = 5.0 V) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) IEBO hFE mA ON CHARACTERISTICS (Note 2) 1000 500 CollectorEmitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) BaseEmitter Saturation Voltage (IC = 10 A, IB = 40 mA) BaseEmitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VCE(sat) Vdc 2.0 3.0 3.5 3.0 VBE(sat) VBE(on) Vdc Vdc SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time td tr tf ts 0.15 0.55 2.5 2.5 ms ms ms ms Storage Time Fall Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA, Duty Cycle v 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 10 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
V2 approx +12 V 0 V1 appox. -8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 ms
for td and tr, D1 is disconnected and V2 = 0

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

VCC -30 V RC

5.0 ts
SCOPE

PNP NPN

TUT

t, TIME (s)

2.0 tf 1.0 0.5 tr td @ VBE(off) = 0 0.2 0.1 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20

8.0 k

40

For NPN test circuit reverse diode and voltage polarities.

0.5

1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Times Test Circuit

Figure 2. Switching Times

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

TYPICAL CHARACTERISTICS
NPN TIP140, TIP141, TIP142
20,000 5000 hFE , DC CURRENT GAIN TJ = 150C hFE , DC CURRENT GAIN 100C 2000 25C -55C 1000 10,000 7000 5000 3000 2000 VCE = 4.0 V 7.0 10 1000 0.5 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 -55C TJ = 150C 100C 25C

PNP TIP145, TIP146, TIP147

500 300 0.5

VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain versus Collector Current

VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)

5.0

5.0

3.0 2.0

3.0 2.0 IC = 10 A, IB = 4.0 mA

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175

IC = 5.0 A, IB = 10 mA 1.0 0.7 0.5 -75 -50 -25 IC = 1.0 A, IB = 2.0 mA

0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C)

150

175

Figure 4. CollectorEmitter Saturation Voltage

VBE, BASE-EMITTER VOLTAGE (VOLTS)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 -75 -25 25 75 125 IC = 10 A VCE = 4.0 V

4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 1.2 0.8 -75 -25 25 75 125 5.0 A 1.0 A 175 VCE = 4.0 V

5.0 A 1.0 A 175

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 5. BaseEmitter Voltage http://onsemi.com

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ACTIVEREGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

20 IC, COLLECTOR CURRENT (AMP) (mA) 10 7.0 5.0 3.0 2.0 1.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C TIP140, 145 TIP141, 146 TIP142, 147 30 50 20 15 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 15 10 7.0 5.0 100 mJ

2.0

0.2 10

1.0 100 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 50 100

Figure 6. ActiveRegion Safe Operating Area

Figure 7. Unclamped Inductive Load

VCE MONITOR MPS-U52 RBB1 INPUT 50 50 1.5k RBB2 = 100 VBB2 = 0 VBB1 = 10 V 100 mH TUT VCC = 20 V IC MONITOR RS = 0.1

INPUT VOLTAGE COLLECTOR CURRENT 1.42 A VCE(sat) -20 V COLLECTOR VOLTAGE V(BR)CER

w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0

TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities.

VOLTAGE AND CURRENT WAVEFORMS

Figure 8. Inductive Load

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO 100 70 50 PNP 20 10 7.0 5.0 NPN PNP NPN VCE = 10 V IC = 1.0 A TJ = 25C

2.0 1.0 1.0

2.0

3.0 5.0 f, FREQUENCY (MHz)

7.0

10

Figure 9. Magnitude of Common Emitter SmallSignal ShortCircuit Forward Current Transfer Ratio

5.0 PD, POWER DISSIPATION (WATTS)

4.0

3.0

2.0

1.0 0 0 40 80 120 160 TA, FREE-AIR TEMPERATURE (C) 200

Figure 10. FreeAir Temperature Power Derating

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

PACKAGE DIMENSIONS
SOT93 (TO218) CASE 340D02 ISSUE E

C B Q E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069

U S K L
1 2

A
3

D V G

J H

DIM A B C D E G H J K L Q S U V

STYLE 1: PIN 1. 2. 3. 4.

TO247 CASE 340L02 ISSUE F

T B U L
4

C E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q U W STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123

N A
1 2 3

Q 0.63 (0.025) P Y
M

T B

F 2 PL

W D 3 PL 0.25 (0.010)
M

Y Q

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP140/D