Rectifier diode

1SR139-400
Applications High speed rectification Dimensions (Unit : mm)

Features 1) Cylindrical mold. (MSR) 2) High reliability. 3) Fast recovery speed.

Construction Silicon diffused junction Taping specifications (Unit : mm)

Absolute maximum ratings (Ta=25C) Parameter Symbol Absolute peak reverse voltage VRMS Reverse voltage (repetitive peak) VR Average rectified forward current (*1) Io Forward current surge peak (60Hz / 1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on alumina board Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR

Limits 500 400 1 40 150 -40 to +150

Unit V V A A C C

Min. -

Typ. -

Max. 1.1 10

Unit V A

Conditions IF=1.0A VR=400V

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ISR139-400
Electrical characteristics curves
1 100000 Ta=75 C Ta=125 C Ta=25 C 0.1 Ta=150 C Ta=-25 C 10000 1000 100 10 1 0.1 0 200 400 600 800 1000 1200 0 100

Data Sheet

Ta=150 C

100 Ta=125 C f=1MHz

REVERSE CURRENT:IR(nA)

FORWARD CURRENT:I F(A)

Ta=75 C Ta=25 C Ta=-25 C

CAPACITANCE BETWEEN TERMINALS:Ct(pF)

10

0.01

0.001

1 200 300 400 0 5 10 15 20 25 30

FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS

REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS

REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS

970

500

50

FORWARD VOLTAGE:V F(mV)

REVERSE CURRENT:IR(nA)

960

400 350 300 250 200 150 100 50 AVE:28.27nA

CAPACITANCE BETWEEN TERMINALS:Ct(pF)

Ta=25 C IF=1A n=30pcs

450

Ta=25 C VR=400V n=30pcs

45 40 35 30 25 20 15 10 5 0 AVE:22.8pF

Ta=25 C f=1MHz VR=0V n=10pcs

950 AVE:932.2mV

940

930

920

VF DISPERSION MAP

IR DISPERSION MAP

Ct DISPERSION MAP

150

100 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs

RESERVE RECOVERY TIME:trr(us)

PEAK SURGE FORWARD CURRENT:I FSM(A)

PEAK SURGE FORWARD CURRENT:I FSM(A)

Ifsm 100 8.3ms

1cyc

2.5 2 1.5 AVE:1.597us 1 0.5 0

Ifsm 8.3ms 8.3ms

1cyc 50

50 AVE:43.0A

0 1 10 100

IFSM DISRESION MAP

trr DISPERSION MAP

NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS

100
Ifsm t

10000

TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W)

Mounted on epoxy board IF=0.5A IM=1mA FORWARD POWER DISSIPATION:Pf(W)

PEAK SURGE FORWARD CURRENT:I FSM(A)

1000

DC D=1/2 Sin(=180) 1

time(ms)
100

Rth(j-a)

50

td=300us

Rth(j-l) 10 Rth(j-c)

0 1 10 100

1 0.001

0.01

0.1

10

100

1000

0 0 1 2

TIME:t(ms) IFSM-t CHARACTERISTICS

TIME:t(s) Rth-t CHARACTERISTICS

AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS

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2010.01 - Rev.C

ISR139-400

Data Sheet

0.02

3 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 DC 1.5 1 0.5 0 0 100 200 300 400 0 25 50 75 100 125 150 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) Sin(=180) D=1/2 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=200V Tj=150

3 2.5 2 1.5 1 Sin(=180) 0.5 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 0A 0V Io t T VR D=t/T VR=200V Tj=150

REVERSE POWER DISSIPATION:PR (W)

DC 0.01 Sin(180) D=1/2

DC D=1/2

30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:18.6V 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:5.00kV

ESD DISPERSION MAP

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Notice

Notes
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R1010A