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Introduction
What are Power Semiconductor Devices (PSD)? They are devices used as switches or rectifiers in power electronic circuits What is the difference of PSD and low-power semiconductor device? Large voltage in the off state High current capability in the on state
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Classification
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Important Parameters
Breakdown voltage. On-resistance. Trade-off between breakdown voltage and on-resistance. Rise and fall times for switching between on and off states. Safe-operating area.
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Thyristor: Structure
Thyristor is a general class of a four-layer pnpn semiconducting device.
Fig.4 (a) The basic four-layer pnpn structure. (b) Two two-transistor equivalent circuit.
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Applications
Power semiconductor devices have widespread applications: Automotive Alternator, Regulator, Ignition, stereo tape Entertainment Power supplies, stereo, radio and television Appliance Drill motors, Blenders, Mixers, Air conditioners and Heaters
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Thyristors
Most important type of power semiconductor device. Have the highest power handling capability.they have a rating of 1200V / 1500A with switching frequencies ranging from 1KHz to 20KHz.
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Is inherently a slow switching device compared to BJT or MOSFET. Used as a latching switch that can be turned on by the control terminal but cannot be turned off by the gate.
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SCR
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Structure
Gate Cathode
n J3 J2
10
19
cm
-3 17 -3
n 10 cm
10
19
cm
-3
n J1
10 10
13
-5 x 10 cm
-3 -3
14
cm
-3
}
}
} }
p p
+
17 19
10
cm
Anode
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Device Operation
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V-I Characteristics
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Considering PNP transistor of the equivalent circuit, I E 1 = I A , I C = I C1 , = 1 , I CBO = I CBO1 , I B = I B1 I B1 = I A (1 1 ) I CBO1 (1)
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2 I g + I CBO1 + I CBO 2 IA = 1 (1 + 2 )
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Case 2: When I G 0
2 I g + I CBO1 + I CBO 2 IA = 1 (1 + 2 )
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Turn-on Characteristics
ton = td + tr
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VAK tC tq t
t1 t2
t3
t4
t5
tq=device tc =circuit
tgr
Turn-off Characteristi c
t
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Thyristor Types
Phase-control Thyristors (SCRs). Fast-switching Thyristors (SCRs). Gate-turn-off Thyristors (GTOs). Bidirectional triode Thyristors (TRIACs). Reverse-conducting Thyristors (RCTs).
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Static induction Thyristors (SITHs). Light-activated silicon-controlled rectifiers (LASCRs). FET controlled Thyristors (FET-CTHs). MOS controlled Thyristors (MCTs).
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These are converter thyristors. The turn-off time tq is in the order of 50 to 100sec. Used for low switching frequency. Commutation is natural commutation On state voltage drop is 1.15V for a 600V device.
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P1 N1 Ig P2 N2 MT1 ()
G (+) Ig
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V
Ig
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Mode-III Operation
MT2 () N4 P1 N1 P2 G (+) Ig
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N2 MT1 (+)
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Mode-IV Operation
MT2 () N4 P1 N1 N3 G (-) Ig
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P2 MT1 (+)
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Triac Characteristics
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BJT structure
heavily doped ~ 10^15 provides the carriers lightly doped ~ 10^8 lightly doped ~ 10^6
note: this is a current of electrons (npn case) and so the conventional current flows from collector to emitter.
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BJT characteristics
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BJT characteristics
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current of electrons for npn transistor conventional current flows from collector to emitter.
IE E VBE
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VCE +
IC C + VCB -
IB + B
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MOSFET
NMOS: N-channel Metal Oxide Semiconductor W L = channel length W = channel width L
Metal (heavily doped poly-Si)
GATE
DRAIN
SOURCE A GATE electrode is placed above (electrically insulated from) the silicon surface, and is used to control the resistance between the SOURCE and DRAIN regions
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N-channel MOSFET
Gate Source
IG
gate oxide insulator
Drain
IS
n
ID
n
Without a gate-to-source voltage applied, no current can flow between the source and drain regions. Above a certain gate-to-source voltage (threshold voltage VT), a conducting layer of mobile electrons is formed at the Si surface beneath the oxide. These electrons can carry current between the source and drain.
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For current to flow, VGS > VT Enhancement mode: VT > 0 Depletion mode: VT < 0
Transistor is ON when VG=0V
For current to flow, VGS < VT Enhancement mode: VT < 0 Depletion mode: VT > 0
Transistor is ON when VG=0V
(n+ denotes very heavily doped n-type material; p+ denotes very heavily doped p-type material)
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G
Body
Body
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MOSFET Terminals
The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
For a p-channel MOSFET, the SOURCE is biased at a higher potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
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oxide semiconductor
VDS
IG
The gate is insulated from the semiconductor, so there is no significant steady gate current. always zero! VGS
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NMOSFET ID vs. VDS Characteristics Next consider ID (flowing into D) versus VDS, as VGS is varied:
S VGS + G D + ID VDS
oxide semiconductor
Above threshold (VGS > VT): inversion layer of electrons appears, so conduction between S and D is possible Below threshold (VGS < VT): no charge no conduction
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The MOSFET as a Controlled Resistor The MOSFET behaves as a resistor when VDS is low:
Drain current ID increases linearly with VDS Resistance RDS between SOURCE & DRAIN depends on VGS
RDS is lowered as VGS increases above VT NMOSFET Example: ID VGS = 2 V VGS = 1 V > VT VDS IDS = 0 if VGS < VT Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)] where Cox ox / tox
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W ID L where k n = kn
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Collector
N+ P
Base
N+
N-
Emitter
Collector
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NPN
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Device Operation
Operation Of IGBT Can Be Considered Like A PNP Transistor With Base Drive Current Supplied By The MOSFET
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Interface between control (low power electronics) and (high power) switch. Functions: amplifies control signal to a level required to drive power switch provides electrical isolation between power switch and logic level Complexity of driver varies markedly among switches. MOSFET/IGBT drivers are simple but GTO drivers are very complicated and expensive.
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Isolation is required to prevent damages on the high power switch to propagate back to low power electronics. Normally opto-coupler (shown below) or high frequency magnetic materials (as shown in the thyristor case) are used.
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Power semiconductor devices can be categorized into 3 types based on their control input requirements: a) Current-driven devices BJTs, MDs, GTOs b) Voltage-driven devices MOSFETs, IGBTs, MCTs c) Pulse-driven devices SCRs, TRIACs
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Power BJT devices have low current gain due to constructional consideration, leading current than would normally be expected for a given load or collector current. The main problem with this circuit is the slow turn-off time. Many standard driver chips have built-in isolation. For example TLP 250 from Toshiba, HP 3150 from HewlettPackard uses opto-coupling isolation.
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Note: MOSFET requires VGS =+15V for turn on and 0V to turn off. LM311 is a simple amp with open collector output Q1. When B1 is high, Q1 conducts. VGS is pulled to ground. MOSFET is off. When B1 is low, Q1 will be off. VGS is pulled to VGG. If VGG is set to +15V, the MOSFET turns on.
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