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(Hall Effect)
(Johns
Hopkins University)
[1]
()
(electron)
1897
(Lorenz force)
()
(carrier
concentration)
(Hall resistivity,
H )
H = R0B+'H , 'H Rs0M
(1)
'H
B
M (magnetization)
R0 Rs (normal Hall
coefficient) (anomalous
Hall coefficient) 'H
M
1950
(solids)
Karplus Luttinger
(anomalous velocity)[2]
Smit (skew
scattering)[3]
(extrinsic
50 DEC 2009 1
spin-orbit coupling) H
(Hall conductivity, H H / )
(electrons lifetime)
(intrinsic
spin-orbit coupling)
(position
operator x )(k)
K
X(k)
2
(intracell
position
operator)
x = i K + X(k) ( =
k
K
1)( )
K
= K eE kK X(k)
(clean limit)
(moderate)[4]
[5]
Berrys
Berrys
1983 Bristol
2 50 DEC 2009
Michael Berry
Hamiltonian R
(adiabatic evolution)
(wave function)
(dynamic phase)
[6]
v X(R) dR, X(R) n(R) | i R | n(R)
(2)
Aharonov-Bohm
Berrys
(2)
holonomy
(parallel transport)
(topology)Berrys
Berrys (connection)
(Bravais lattice)
(Bloch
state)
nk (r) = eikr u nk (r) u nk (r)
k
E (perturbation)
(momentum or reciprocal space)
(2) k
R
Berrys = X(k) dk Berrys
X(k) u nk | i k | u nk
x = i K + X(k)
(gauge transformation
invariance)
Berrys
Hamiltonian = 0 + P perturbed
K
Hamiltonian p = E (ex)
K
K
= K eE kK X(k)
x = i[ , x]
k
K
K
J = 2 ek f k d 3k = 2 e K eE (f k0 + g k )d 3k
k
(3)
f k - (Fermi-Dirac
distribution)f k0 (equilibrium)
- g k
(3)
K
3
0
d
kf
k
H = ne 2
3
0
d kf k
(4)
n Berrys
(time reversal
symmetry invariance) (parity
symmetry invariance)
Berrys
Berrys
(4)Berrys
H
(diffusive transport)
(impurity)
H
Spinel
CuCr2Se4 (Cu)
(valance) 1+
3+(Cr)
(Anderson)(super-exchange)
(exchange
interaction)
CuCr2Se4 90
Cr-Se-Cr (exchange
interaction)
CuCr2Se4 Br Se
CuCr2Se4 x Brx
M ( B / Cr)
2.5
5K
2.0
CuCr2Se4-xBrx
1.5
x = 1.0
x = 0.85
x = 0.5
x = 0.25
x=0
(a)
1.0
0.5
2
3
4
0H ( T )
X-Ray
Br x
(a) Spinel
CuCr2Se 4 x Brx
Tc Br x
(b)Tc x
x=0 425K x=1.0 250K
Br
(robust) x=0 1.0
15% Tc
45%
90 Cr-Se-Cr
(a) (logarithmic)
Br x 0.5
300
x 0.5
(insulating) 5K
x=0 0.023mcm x=1.0
32mcm Br
(order of magnitude)
250
450
400
350
TC ( K )
(b)(Curie temperature) Br
x
(vapor transport)
Spinel CuCr2Se4 x Brx
0.3
Tesla x=0
1.0 2.6 B 2.9 B
3.0
0.0
0
200
150
100
50
CuCr2Se4-xBrx
0
0.0 0.2 0.4 0.6 0.8 1.0
X
4 50 DEC 2009
(a)
x = 1 (A)
10
(thermal
activation)
(disorder) (weak
localization) x
10K
(impurity)
(phonon) 5K
(mean free path)
x
1 (B)
0.85 (A)
( m cm )
0.85 (B)
0.6
0.5 (A,B)
0.25
0.1
0.1
'xy
CuCr2Se4-xBrx
0.01
50
Br
(4)
(b)
T( K )
'xy / n l0
-23
-7
10
10
xy'/n
-24
-8
10
|xy'|/n (m /)
10
-25
-9
10
10
(b)
mfp
-26
10
-10
-7
10
-6
10
-5
10
-4
10
10
-3
10
at 5 K ( m )
X=1.0
50
(sign
change)(b)
Br x 0.25 0.5
(4)
50 DEC 2009 5
| 'xy | / n = e 2 Berrys -
(Fermi surface)(band
crossing point)Berrys
Spinel CuCr2Se4
3d
Br
Spinel CuCr2Se4
(intrinsic)
(extrinsic)
xy / T
Br x x
0.85 xy / T [7]
6 50 DEC 2009
(semi-classical)
xy
xy =
2 k 2BT xy
3 e =
(5)
xy
(b) XY = AN A n
xy T
(density of state)
NF(b) xy / T
n x > 0.85
N 0F
(scaling)( (b) )
N 0F (n n 0 ) 3 n 0 (threshold)
1
x > 0.85
x = 1.0
x > 0.85
(hopping transport)
xy = gTN 0F g
-0.5
x=1
x = 0.85
x = 0.6
x = 0.25
x = 0.1
-0.4
Berrys
-0.3
xy ( A/m-K )
Berrys
-0.2
(gauge field)
-0.1
(non-trivial topology)
Berrys (2) R
0.0
(a)
0.1
25
50
75
100
T(K)
(2-D electron
gas)
Berrys
(Landau
xy/T = g NF
-5
x = 0.1
-4
xy/T ( 10 A/m-K )
space) R
(momentum space)
xy
-6
0.25
Level)(gap) xy
-3
-3
-2
0.6
-1
0.85
1.0
(parameter
(b)
1
4
21
-3
n( 10 cm )
Z2 Z2
50 DEC 2009 7
1
(phase)
(insulating phase)
(gapless)(edge states)
(spin up)
(spin down)
(bulk)
(band)
(dissipationless)
Z2 Berrys
Berrys
Berrys
Berrys
106 113
8 50 DEC 2009
E-mailtamt@phys.ntu.edu.twTel02-33665106