1. The charge of an electron is (a) 1.602 1019 C (b) 1.602 109 C (c) 1.602 1020 C (d) 16.

16.02 1019 C 2. An electron is accelerated through a potential dierence of 987 V, then KE is. (a) 987 eV (b) 98.7 eV (c) 0.987 eV (d) 9.87 eV 3. An electron starts as rest on one plate of parallel plate capacitor, whose plates are 5cm apart. The applied voltage is zero at the instant the electron is released and it increase linearly from 0 to 10v in 0.1 m sec. Where will it be at the end of 50n sec? (a) 0.732m (b) 0.32cm (c) 0.732cm (d) 0.2cm 4. The property of some metals to emit light when stimulated by radiation is called (a) long persistence (b) Fluorescence (c) persistence (d) phosphorescence 5. The period for one revolution of the charged particle in Magnetic eld with Radius = 2mts velocity = 107 & angle = 300 is (a) 2.512 106 sec (b) zero (c) 1.5 106 sec (d) 3.12 106 sec 6. In Electrostatic focusing system the ratio of second anode voltage to rst anode voltage is generally kept at ratio. (a) 5: 1 (b) 3:1 (c) 1:5 (d) 4:2 7. The following indicate the time base signal (a) shown in gure 7a

Figure 7a (b) shown in gure 7b

Figure 7b (c) shown in gure 7c

Figure 7c (d) shown in gure 7d

Figure 7d 8. In an electrostatic deection system deection on CRO screen for deecting voltage of 20 V is 4 cm. Then deection sensitivity is (a) 0.2 m/v (b) 5 v/m (c) 0.2 cm/v (d) 5 v/cm 9. Ina CRT, the length of deecting plates in the direction of the beam is 2 cm, the spacing of the plates is 0.5 cm and the distance of the orescent screen from the centre of the plate is 18 cm. Calculate the deection sensitivity if the nal anode voltage is 500 v (a) 0.27 cm/v (b) 0.72 cm/v (c) 0.0072 cm/v (d) 0.072 cm/v 10. If there is a spot on CRO screen intensity knob should be kept (a) very high (b) low (c) moderate (d) high 11. A n-type material has (a) both positive and negative charge carriers are equal in number (b) mobile positive ions (c) electrons as majority carriers (d) holes as majority carriers 12. When germanium is doped with trivalent impurity, the resulting material is (a) p-type semi conductor (b) intrinsic semi conductor (c) conductor (d) n-type semi conductor 13. Determine the conductivity of pure silicon at 3000 K. assuming that the concentration of carriers at 3000 K is 1.6 1010 /cm3 for silicon and n = 1500 cm2 / V-Sec. And p = 500 cm2 /V-sec. (a) 0.512 106 moh/cm (b) 0.0512 106 moh/cm (c) 51.2 106 moh/cm (d) 5.12 106 moh/cm 14. The current in the circuit of gure14 shown is to be 10 m A with VAA = 1.5V. Determine the value of R given that the diode is ideal

Figure 14 (a) 150 (b) 1.5 (c) 0.15t (d) 15 15. In pure semiconductor number of holes is equal to the number of (a) mobile positiveions (b) free electrons (c) positrons (d) immobile negative ions 16. Drift of the electrons in a region is due to (a) Thermal energy (b) applied magnetic eld (c) radiation (d) applied electric eld 17. In an unbiased p-n junction current does not ow because (a) Only negative charges cross the junction (b) Equal and opposite charges cross the junction (c) Netow of charges across the junctions is zero (d) Only positive charges cross the junction 18. The diode used in voltage regulator is (a) Schottky diode (b) PN junction diode (c) Zener diode (d) Gunn diode 19. In a tunnel diode, impurity concentration is of the order of (a) 1 in 103 (b) 1 in 105 (c) 1 in 109 (d) 1 in 107 20. The equivalent circuit of varactor diode is (a) Shown in gure20a

Figure 20a (b) Shown in gure20b

Figure 20b (c) Shown in gure20c

Figure 20c (d) Shown in gure20d

Figure 20d