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Bernard.Dieny@cea.fr
July 2013
Part 4
inMRAM
2013
Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM Comparison of STTRAM with resistive RAM
Bernard.Dieny@cea.fr
inMRAM
2013
Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM Comparison of STTRAM with resistive RAM
Bernard.Dieny@cea.fr
inMRAM
2013
DW motion
Hx
Hy
STT-TAS
Precessional
Bernard.Dieny@cea.fr
inMRAM
2013
Memory Hierarchy
Processor
2GHz
Speed p-STTRAM
UltrafastMRAM:
ReplacingSRAMmemory Buildingnonvolatilelogiccircuitswithlowenergyconsumption
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Spin-transfer torque:
r P r M
r P r M
= a j M ( P M )
Stochastic reversal incubation time preceding a large thermal fluctuation Slows down the STTRAM writing
inMRAM
2013
r A r M r P
Equationofmotion
2 STT contributions
Perpendicular Polarizer
Bernard.Dieny@cea.fr
inMRAM
2013
Cu
Injection of electrons with out-of-plane spins; Steady precession of the magnetization of the soft layer adjacent to the tunnel barrier. Precession (2GHz-40GHz) + Tunnel MR RF voltage Interesting for frequency tunable RF oscillators Radio opportunism
(SPINTEC patent + Lee et al, Appl.Phys.Lett.86, 022505 (2005) )
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
r A
Depending on the relative influence of STT from perpendicular polarizer and in-plane analyzer, different switching behaviors can be observed: -If STT from in-plane Analyzer dominates Non-oscillatory switching probability vs pulse duration. Final state determined by current direction. No need to read before write. -If STT from perpendicular Polarizer dominates Oscillatory switching probability versus current pulse duration. Switching whatever the current direction. More difficult to control in STTRAM devices since requires controlling the current pulse duration at 50ps. Requires read before write.
FreeLayer
Perpendicular Polarizer
r P
How to conveniently tune the relative influence of these two STT contributions?
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Tuning the relative STT influence of perp polarizer and in-plane analyzer by playing on the cell aspect ratio
STTfrominplaneanalyzer:
2e t M jcLong = F 0 s g(0) h
2 M s 2e t F 0 M s H K+ 2 h 2g(0)
(SI units)
STTfromperpendicularpolarizer:
2e t M H jcPerp = F 0 s K h g(/2) 2
Hk = in-plane shape anisotropy field
K.J.Lee et al, APL 86, 022505 (2005)
Perp c
> j> j
Long c
implying
i.e
g (0 ) H K
( 2) M
<1
Typically,
inMRAM
2013
inMRAM
2013
100% 50%
AP P
Magnetoresistance (a.u.)
Frequency (GHz)
20 10 0 0 5 10 15
time (ns)
Bernard.Dieny@cea.fr
inMRAM
2013
APinitialstate AP and P reference signals measured under sufficiently large magnetic field to maintain the AP and P configurations during the current pulse. Field switched off afterwards.
As expected, the perpendicular polarizer induces a large amplitude precession around the normal to the plane
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
500mV
0,6GHz
563mV
Frequency (GHz)
Voltage (V)
Voltage (V)
2.50E-008
3.00E-008
3.50E-008
4.00E-008
4.50E-008
2.00E-008
A/m)
0.01 0.00 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 2.00E-008 2.50E-008 3.00E-008
630mV
1GHz
708mV
Voltage (V)
Voltage (V)
2.00E-008
Bernard.Dieny@cea.fr
inMRAM
2013
De-phasing of precessional motion explains the probability amplitude decay observed in probability measurements
Switching probability (%)
9 10
AcknowledgementtoT.DevolderatIEF inParisforrealtimemeasurements
July 2013 Part 4 15
inMRAM
2013
Cu
f~200MHz
1 / f 5ns
Time evolution of spectrum
x 10
-7
F re q u e n c y vs T im e
0.90 mA
12
V (V)
0 -0 .0 0 5 -0 .0 1 -0 .0 1 5 -0 .0 2
t (s)
10
0.90 mA 1.25 s
10 time t (s )
x 10
15 150 ns
-8
7.1
7 .2
7 .3
7.1
f(GHz)
July 2013 Part 4
7 .4 f (H z )
7.5
7.6
7.7
7 .8
7.8
x 10
9
Bernard.Dieny@cea.fr
inMRAM
2013
100% 50%
AP
AP
9Non-oscillatory bipolar switching can be achieved. 9 If the current is too large, oscillatory switching probability is recovered 9Ultrafast reversal without incubation time
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Incubation time
4.5e10 A/m2 5.5e10 A/m2 6.5e10 A/m2 7.5e10 A/m2 1.0 1.2
9 No stochastic incubation time 9 Reduced switching current 9 Switching time is reduced to 300ps by increasing the current density
Bernard.Dieny@cea.fr
inMRAM
2013
1 .0 0 .8 0 .6 0 .4 0 .2 0 .0 0 2
500m V 562m V 6 3 1 m V c e n te re d b ia s 6 3 1 m V A P b ia s 6 3 1 m V P b ia s 708 794m V
4 6 8 P u ls e w id th (n s )
10
Fullfilling the condition jcPerp > j > jcLong allows for bipolar non-oscillatory switching of the storage layer magnetization suitable for SRAM type of applications
precessionstopsatstablestateafterhalfaprecessionperiod.
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Summary on ultrafast STTRAM with orthogonal polarizers Ultrafast STT switching with combined STT influences from perpendicular polarizer and in-plane analyzer Successful integration of a perpendicular polarizer in an in-plane magnetized MTJ with good TMR signal (~6070%). Oscillation of the switching probability associated with dominant STT influence from perpendicular polarizer Bipolar non-oscillatory switching can be achieved for ultrafast reliable writing in STTRAM by using elongated cells. Drawback is larger footprint. Sub-ns switching and low energy consumption can be achieved (90fJ range)
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Bernard.Dieny@cea.fr
inMRAM
2013
(b)
(c) (d)
Positive current
H=0
Bernard.Dieny@cea.fr July 2013 Part 4
Negative current
inMRAM
2013
Bernard.Dieny@cea.fr
inMRAM
2013
Race-track memories
Shift register based on coherent domain wall displacements induced by current
C
Reading
Writing
Vertical racetrack
Horizontal racetrack
Bernard.Dieny@cea.fr
inMRAM
2013
Race-track memories
Injection of domain walls:
Injection by STT through a tunnel barrier can also be used or using the fringing field from a domain wall in an underlying wire (see
previous slide).
Injection by field
Bernard.Dieny@cea.fr
inMRAM
2013
Race-track memories
Race-track: a multibit MRAM with extended storage layer.
Bernard.Dieny@cea.fr
inMRAM
2013
Race-track memories
Successful demonstration on a 8m long shift register:
Bernard.Dieny@cea.fr
inMRAM
2013
Race-track memories
Remaining challenges:
-Use perpendicular-to-plane materials for narrower domain walls and weak pinning energies. -Avoid pinning defects which locally trap domain walls. One single pinning defect along a given track may prevent that whole track to properly work. -Homogeneity of properties if using vertical dimension.
Bernard.Dieny@cea.fr
inMRAM
2013
3-terminal devices
Voltage controlled MRAM Comparison of STTRAM with resistive RAM
Bernard.Dieny@cea.fr
inMRAM
2013
DW motion
Hx
Hy
STT-TAS
Precessional
Bernard.Dieny@cea.fr
inMRAM
2013
DW velocity (m/s)
V~250m/s 100nm ~ 400ps Advantages : -Less electrical stress on the barrier during write (improved reliability) -Less current required to write since thickness<<width -Multibit possible
inMRAM
2013
NEC
The memory cell has a shape such that a magnetic wall is necessarily exist. Domain wall moved by STT influence from in-plane current.
Bernard.Dieny@cea.fr
inMRAM
2013
Bernard.Dieny@cea.fr
inMRAM
2013
DW motion
Hx
Hy
STT-TAS
Precessional
Bernard.Dieny@cea.fr
inMRAM
2013
r J
r E
O-pz
Co-dz
r J
r E
r 1 1 r r vE B= c 1 v2 / c2
inMRAM
2013
Magnetization reversal by Rashba effect in MTJ electrode with in-plane current Switching induced by spin-orbit torque: Rashba or Spin-Hall
Bernard.Dieny@cea.fr
36 inMRAM
2013
Bernard.Dieny@cea.fr
inMRAM
2013
E = RI 2t
In STTRAM, the energy per write event is in the range 0.1pJ-10pJ (depending on the retention).
If we could control the magnetic properties of the storage layer by voltage without significant current flow through the MTJ, then the energy consumption could be reduced to
1 2 E = CV 2
Bernard.Dieny@cea.fr
inMRAM
2013
-Using the influence of interfacial electric field on the perpendicular anisotropy at magnetic metal/oxide interface
Bernard.Dieny@cea.fr
inMRAM
2013
Intrinsically weak effect. Large manifestation if close to condition of anisotropy reorientation (for instance compensation between in-plane demagnetizing energy and perp interfacial energy). But difficult to use in actual device because condition fulfilled at only one temperature.
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
Ultrafast precessional STTRAM Race track memories 3-terminal devices Voltage controlled MRAM
inMRAM
2013
STT-MRAM
ReRAM
Vwr0~-0.9V
Vwr1~0.9V@5ns Vread~0.3V
Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
(2011)
F1
EF
F2 eV
EF
R = Rmin + R
(1 cos )
2
Statistical phenomenon associated with migration of vacancies or metallic ions
J.Lee et al, Gwanju IST, Korea (IEDM2010)
Spin-dependent quantum mechanical tunneling of electrons (as polarizer/analyzer in optics). Switching of magnetization described by LLG equation:
dM dM = M (H eff + bI .M p ) + aI .M (M M p ) + M dt dt
R distributions:
Normalised Count
10
10
-1
Rmin
Rmax
10
-2
8kbit ReRAM
(K.Kit, SAIT, Samsung IEDM 2010)
10
-3
10
-4
10
-5
>25
0 100 200 300 400 500 600 Resistance 700 800 900 1000
10
-6
inMRAM
2013
(2011)
TMR(%)
H(Oe)
Binary resistance levels Multilevel and memristor possible but with much less R amplitude than with ReRAM. Not so easy to implement (R(), DW or stacking of several MTJ)
Cyclability:
240
Resistance ()
Rmax Rmin
10
10
10
10
10
10 12
Vwrite
Number of pulses
W.C.Chien et al, Macronix, Hsinchu, Taiwan, (IEDM2010) >1016 cycles Bernard.Dieny@cea.fr July 2013 Part 4
inMRAM
2013
(2011)
Y.T.Cui et la, PRL104, 097201(2010) W.C.Chien et al, Macronix, Hsinchu, Taiwan, (IEDM2010)
Retention:
E I cell t Fchip = 1 exp m exp k T 1 I 0 WR B
E/KBT>67
OK with perpendicular MTJ OK with TAS
Bernard.Dieny@cea.fr
inMRAM
2013
(2011)
http://www.unitysemi.com/
MTJ+diode
inMRAM
2013
5k0.3k / 12k0.8k
Bilevel resistance Natural continuous change of R Multilevel possible but not straighforward Multilevel capability easier to implement Moderate R : Rmax/Rmin ~2-3 Large R : Rmax/Rmin ~5 - 50
Applications
Bernard.Dieny@cea.fr
inMRAM
2013
Acknowledgements
L.Buda-Prejbeanu M.Chshiev H.Bea S.Amara V.Baltz J.Moritz P.Y.Clement C.Baraduc L.Cuchet B.Lacoste Q.Stainer G.Vinai
Bernard.Dieny@cea.fr
inMRAM
2013