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Electronic Circuits and Devices Laboratory ELCE-221 Laboratory Experiment No.

4 Experiment Title: DC Transistor Characteristics

Aim: The aim of this experiment is to familiarize students with the D.C characteristics of low power bipolar transistors. Objectives: On completion of this experiment the student should be able to: 1. 2. 3. 4. To determine transistor beta by measurements. To define by measurement all voltages associated with transistor circuits, and their relationships. To calculate all transistors currents through the use of voltage measurements. Draw the input and output characteristics of the transistor.

Risk Assessment:

Low

Introduction:
Before undertaking any transistor circuit measurements, a thorough understanding of current and voltage terminology must be available to the student. A single subscripted voltage means the voltage from that particular subscript to ground. A double subscripted voltage means the voltage at the first subscript with respect to the second subscript, except for power supply voltage labels such as that in Figure 4.1. The student should review the labeled voltages and currents in Figure 4.1 to assure that the terminology is correctly understood.
VCC
R1 R3

VCE VC R4 VE

VBE R2 VB

Figure 4.1: Transistor Voltage and Current Terminology Several relationships can be deduced from studying the terminology in Figure 4.1. These expressed in the DC equations that follow.
I E = IC + I B . . . . . . .
VCE = VCB + V BE

...

.........

1 2

...... .........

IC IB

IC IE

+1

....

Transistor currents are almost never measured. They are normally calculated from voltage measurements. Referring to Figure 4.1, DC currents can be calculated as given below.

IC =

VCC VC R3

...................

IE =

VE R4

................... ...................

5 6

I B = I E IC

Procedure Task 1: Measuring forward current gain ( ):


1. Connect the circuit of Figure 4.2 using the 2N 2222A transistor
5V 10 V

20 Volts

R1 820k

R2 1k

2N 5210

EBC

Figure 4.2: Beta Measurement Circuit 2. 3. 4. 5. Measure both VC and VBE and record in Table 4.1. Turn off the power to the circuit and disconnect the resistors and measure their resistance and record in Table 4.1. Use the measured voltages and resistance to calculate the current and as required for Table 4.1. Select another transistor (BC108) and repeat steps 1 through 6 for it. Table 4.1: Beta Measurements Measurements VC VBE R1 R2 IC Calculations IB

Transistor 1 2

Task 2: Other transistor characteristics:


6. 7. Before connecting the circuit of Figure 4.3, measure the resistance of R3 and R4 and record these in Table 4.2. Connect the circuit of Figure 4.3 then adjust the power supply voltage to 20 V.

VCC
R1 150K R3 10K

22K

R2

2.7K
EBC

R4

2N 5210

Figure 4.3: Measurement Circuit 8. Measure VB, VC and VE and record in Table 4.2. Table 4.2: Transistor Characteristics Measurements R3 R4 VB VC VE IE Calculations IC IB

VCE

VBE

VCB

Task 3: Input and Output characteristics


1. Input characteristics:
11. Turn on the NI ELVIS Bench top Workstation, select StartProgramsNational InstrumentsNI ELVISmx NI ELVISmx Instrument Launcher , or select ELVISmx Instrument Launcher on the desktop. Select the Two-Wire Current-Voltage Analyzer (2-Wire). Place the 2N 2222 A transistor across the DMM/Impedance Analyzer pin sockets board (Base: DUT+, Emitter: DUT-). Change the following parameters: Start: 0 V, Stop 0.7 V, Increment 0.05 V. Click on Run and see the I-V curve appear. Save your analysis through the Log option. Plot the analysis curves and determine the PN junction knee voltage

12.

13.
14. 15. 16. 17.

2. Output characteristics:
18. Turn on the NI ELVIS Bench top Workstation, select StartProgramsNational InstrumentsNI ELVISmx NI ELVISmx Instrument Launcher , or select ELVISmx Instrument Launcher on the desktop. Select the Three-Wire Current-Voltage Analyzer (3-Wire). Place the 2N 2222 A transistor across the DMM/Impedance Analyzer pin sockets board (Collector: DUT+, Base: BASE, Emitter: DUT-). Change the following parameters: V c Start: 0 V, Vc Stop 9 V, Vc Step 0.5 V, Ic Limit 40mA, Ib Start 10 A, Ib Step 5 A, Number of Curves 5. Click on Run and see the I-V curve appear. Save your analysis through the Log option. Plot the analysis curves and determine the transistor current gain

19.

20.
21. 22. 23. 24.

Questions
1. 2. 3. 4. 5. 6. Refer to Table 4.1. From your data, what would seem to be a good value to use as a constant for VBE? Refer to the circuit of Figure 4.2. Explain what happens to collector current when beta increases. Refer to Table 4.2. From your data, does VBE plus VCB equal VCE? Calculate the using your calculated emitter and collector currents in Table 4.2. Comment on the input characteristics of the BJT. Comment on the output characteristics of the BJT.

Results and Conclusions:


You should attach all your results and expected to comment on them. Also, it is required to give your conclusions on the whole experiment.

References:
[1] A. Sedra and K. Smith, Microelectronic Circuits, 6th edition, Oxford University Press, 2010. [2] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, 10th edition, Prentice-Hall, 2008.

Electronic Circuits and Devices Laboratory ELCE-221


Laboratory Experiment NO: 4 Marking Sheet (Include this as the cover sheet for your report) Students Names and ID Nos.: 1-. 2-. 3-. Date of Experiment: ..

Laboratory Section: .

Please note that your work for this laboratory experiment will be assessed according to the marking scheme below. Please take this into account when conducting the experiment and writing the report.

No.
1.

Criteria
Performance in the lab

Description
This is to reflect the students Performance in the Lab Documentation and analysis of the results for each task performed in the lab.

Weight %
20

Mark
1. 2. 3.

Comments

2.

Results and Analysis

50

3.

Summery/ Conclusion

Conclusions for each task performed in the lab.

10

4.

Report presentation

Overall presentation of the report including layout and clarity of figures, tables and graphs. Correct use of English language.

20

Total

100

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