PD - 91301C

IRL3803
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 30V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 0.006Ω
G
l Fast Switching
l Fully Avalanche Rated ID = 140A…
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140…
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 98… A
IDM Pulsed Drain Current  470
PD @TC = 25°C Power Dissipation 2000 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy ‚ 610 mJ
IAR Avalanche Current 71 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
RθJA Junction-to-Ambient –––– –––– 62

8/20/96
IRL3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ.
Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 –––
––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052
––– V/°C Reference to 25°C, ID = 1mA
––– –––
0.006 VGS = 10V, ID = 71A „
RDS(on) Static Drain-to-Source On-Resistance Ω
––– –––
0.009 VGS = 4.5V, ID = 59A „
VGS(th) Gate Threshold Voltage 1.0 –––
––– V VDS = V GS, ID = 250µA
gfs Forward Transconductance 55 –––
––– S V DS = 25V, ID = 71A
––– –––25 VDS = 30V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– –––
250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– –––
100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– –––
-100 VGS = -16V
Qg Total Gate Charge ––– –––
140 ID = 71A
Qgs Gate-to-Source Charge ––– –––41 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– –––78 VGS = 4.5V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 14––– VDD = 15V
tr Rise Time ––– 230
––– ID = 71A
ns
td(off) Turn-Off Delay Time ––– 29
––– RG = 1.3Ω, VGS = 4.5V
tf Fall Time ––– 35––– RD = 0.20Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 5000 ––– VGS = 0V

Coss Output Capacitance ––– 1800 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 880 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 140…
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 470
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 71A, VGS = 0V „
trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 71A
Q rr Reverse RecoveryCharge ––– 450 680 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 180µH … Caculated continuous current based on maximum allowable
RG = 25Ω, IAS = 71A. (See Figure 12) junction temperature;for recommended current-handling of the
ƒ ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, package refer to Design Tip # 93-4
TJ ≤ 175°C
 IRL3803
10000 VGS
TOP 15V 10000 VGS
12V TOP 15V
10V 12V
8.0V 10V
1000
ID , D rain-to-S ource C urrent (A )

6.0V 8.0V
1000

ID , Drain-to-Source Current (A )
4.0V 6.0V
3.0V 4.0V
BOTTOM 2.0V 3.0V
BOTTOM 2.0V
100
100

10
10

1
1 2.0V

0.1
0.1
2 .0 V
2 0µ s P U LS E W ID T H
T J = 2 5°C 2 0µ s P U LS E W ID TH
0.01 A T J = 1 75 °C
0.1 1 10 100 0.01 A
0.1 1 10 100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

TJ = 25oC TJ = 175oC

1000 2.0
I D = 1 20 A
R D S (on ) , D rain-to-S ource O n R esistance

T J = 2 5°C
I D , D rain-to-So urce C urren t (A )

100 TJ = 1 75 °C
1.5
(N orm alized)

10

1.0

0.5
0.1

V DS = 2 5V
2 0µ s P U L S E W ID TH V G S = 10 V
0.01 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRL3803

10000 15
V GS = 0V , f = 1MHz I D = 7 1A
C iss = C g s + C g d , C d s S H O R TE D V D S = 2 4V

V G S , G a te-to-S ou rc e V o ltag e (V )
C = C gd
C iss C rs s = C ds + C g d
V D S = 1 5V
8000 o ss 12
C , Capacitance (pF)

6000 C oss 9

4000 6

C rss

2000 3

FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 40 80 120 160 200
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I S D , R everse Drain C urrent (A )

10µ s
I D , D rain Current (A )

TJ = 17 5°C
100 100µ s
100

T J = 25 °C

1m s

T C = 25 °C
T J = 17 5°C
V G S = 0V S ing le P u lse 10m s
10 A 10 A
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRL3803

140 RD
LIMITED BY PACKAGE VDS
120
VGS
D.U.T.
RG
I D , Drain Current (A)

100 +
-VDD

80 4.5V
Pulse Width ≤ 1 µs
60 Duty Factor ≤ 0.1 %

40 Fig 10a. Switching Time Test Circuit

VDS
20
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL3803

1500
L ID

E A S , S ingle Pulse Avalanc he E nergy (m J)

VDS TOP 29 A
5 0A
D.U.T.
1200 B O TT O M 71 A
RG +
V
- DD
900
4.5 V IAS
tp
0.01Ω

600
Fig 12a. Unclamped Inductive Test Circuit

300

V(BR)DSS V D D = 15 V
0 A
25 50 75 100 125 150 175
tp
S tarting T J , J unc tion T em perature (°C )
VDD

Fig 12c. Maximum Avalanche Energy

VDS Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

4.5 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRL3803

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRL3803
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
1 0 .5 4 (.4 1 5 ) 3 .7 8 (.1 4 9 ) -B -
1 0 .2 9 (.4 0 5 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
-A - 1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )
4
1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S OU RC E
4 - D R A IN
4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )

0 .9 3 (.0 3 7 ) 0 .5 5 (.0 2 2 )
3X 3X
0 .6 9 (.0 2 7 ) 0 .4 6 (.0 1 8 )
1 .4 0 (.0 5 5 )
3X
1 .1 5 (.0 4 5 ) 0 .3 6 (.0 1 4 ) M B A M
2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )
2 .5 4 (.1 0 0)
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
2 C O N T R O L L IN G D IM E N S IO N : IN C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010 PART NUMBER
LOT CODE 1789 INTERNATIONAL
AS S EMBLED ON WW 19, 1997 RECT IFIER
LOGO
IN THE AS S EMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
AS S EMBLY
LOT CODE WEEK 19
LINE C

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/96