6.

SILICON CONTROLLED RECTIFIER CHARACTERISTICS

EXPT.NO:
DATE:

AIM:
To plot the VI characteristics oI SCR.

APPARATUS REQUIRED:

1. Power Supply - (0 30) V
2. Ammeter - (0 30) mA
3. Voltmeter - (0 30) V
4. SCR - C106M
5.Resistors - 33K , 1K


THEORY:

SCR is a Iour layer, three junction, three terminal semi-conductor device. The terminals
are anode, cathode and gate. The doping oI the anode and cathode layers is high while that oI
the gate regions are low. The anode is always at a higher positive potential than the cathode.
This Iorward biases the other junctions J
1
& J
3
while the inner junction J
2
is reverse biased. Due
to the presence oI a reverse biased junction in series, no current other than a small amount oI
minority current Ilows through device.

When the applied potential is increased the Iorward bias at the outer layers and the reverse
voltage at the inner layers increases resulting in avalanche multiplication. The potential at which
break down occurs is known as BREAKDOWN POTENTIAL or FIRING POTENTIAL. Since
breakdown occurs there is a large increase in current through the device and hence a decreased
resistance and voltage across the device with Iurther increases with respect to the cut-oII region,
or in the state beIore the breakdown potential and aIter V
BO
, it is in the on state, initially entering
the negative resistance region and the operating in the saturation region.

A voltage applied at the gate terminal can control the breakdown voltage. The gate terminal
is Iorward biased with respect to cathode and when the gate potential is given, the inner junction
is Iorward biased and introduction oI gate current decreases the break over voltage there by
turning ON the SCR at an earlier stage. Thus the gate terminal is used to control the turn ON oI
the SCR. Once reading the anode to cathode voltage can put oII the device.






PROCEDURE:

1. Connect the circuit as shown in the circuit diagram.

2. Set the gate current I
G
equal to Iiring current and vary anode to cathode voltage V
AK
in
stops oI 0.5V and note down the corresponding anode current I
A.


3. V
BO
is the point where voltage V
AK
suddenly drops and there is a sudden increase in
current I
A
.

4. The current corresponding to the point where there is a sudden increase in anode current
I
A
is called latching current I
C
.

5. Increase V
AK
in steps oI 1V, till its maximum.

6. Open the gate terminal and decrease V
AK
.

7. Holding current in the current below, which the deIlection in both voltmeter (V
AK
) and
ammeter (I
A
) suddenly reduces to zero.























RESULT:

Thus the VI characteristics oI SCR were plotted.



CIRCUIT DIAGRAM: (0-50) mA 1K



33K (0-100)A
(0-30)V (0-30)V

(0 30)V





MODEL GRAPH: Specification:
50 Hz Thy (106A; 600V)

Pin configuration
I
A
(mA) Front View of C106M






K A G


V
BO
V
AK
(V)


TABULAR COLUMN:

I
G
( A) I
AK
I
A















A
A
V

7. CHARACTERISTICS OF DIAC

EXPT.NO:

DATE:

AIM:
To plot the VI characteristics oI DIAC.


APPARATUS REQUIRED:

1. Power Supply - (0 30) V
2. Ammeter - (0 10) mA
3. Voltmeter - (0 30) V


THEORY:
DIAC is a bidirectional switch, which has two terminals MT1 and MT2.Rising the applied
voltage more than the break over voltage aIIects the conduction oI DIAC. When the anode 2 is
made more positive than anode 1, current starts conducting Irom anode 2 to anode 1. The sudden
inrush oI current results in the small voltage across the device. Hence immediately aIter the
break over point, the voltage drops down. When the anode-1 is made positive than anode-2, the
current start conducting Irom anode-1 to anode-2.


PROCEDURE:

1. Connect the circuit as shown in the circuit diagram.
2. Vary the power supply in regular steps and note down the corresponding current and
voltage oI the DIAC.
3. Reverse the DIAC terminal.
4. Repeat the procedure 2.
5. Plot the graph: Voltage (V) Vs Current (mA).


















































RESULT:

Thus the VI characteristics oI DIAC were plotted

CIRCUIT DIAGRAM:

MODEL GRAPH:










TABULAR COLUMN:

FORWARD BIASED REVERSE BIASED
Voltage (V) Current (mA) Voltage (V) Current (mA)




































10.CHARACTERISTICS OF PHOTO - DIODE

Expt.No:
Date :

AIM:
To study the characteristics oI a photo diode

APPARATUS REQUIRED:

S.NO Equipments and components Range Quantity
1 Regulator power supply (0-30)V 1
2 Ammeter (0-500)A 1
3 Resister 680O 1
1KO
Voltmeter (0-30)V 1
5 DC bulb - 1
6 photodiode - 1



THEORY:

A photometer is a two terminal PN junction device, which operates on
reverse bias on reverse biasing a PN junction diode, there results a constant current
due to minority change carriers known as reverse saturation current. Increasing the
thermally generated minority carriers by applying external energy (i.e.) either heat
or light energy at the Iunction can increase this current when we apply light energy
as an external source, it results in a photo diode that is usually placed in a glass
package so that light can reach the Iunction initially when no light is incident, the
current is only the reverse saturation current that Ilows through the reverse biased
diode. This current is termed as the dark current oI the photo diode. Now then light
is incident on the photodiode then the thermally generated carriers increase
resulting in an increased reverse current which is proportional to the intensity oI
incident light. A photo diode can as a Iast acting switch.




PROCEDURE:
1. Rig up the circuit as per the circuit diagram.
2. Maintain a known distance (say 5cm) between the DC bulb and the
photodiode.
3. Set the voltage oI the bulb (say 2 V) vary the voltage oI the diode insteps
oI 1 V and note down the corresponding diode current I
r
.
4. Repeat the above procedure Ior the various voltages oI DC bulb.
5. Plot the graph V
D,
V
S,
I
r
Ior a constant DC Voltage.




MODEL GRAPH:

I(A) V
3




V
2



V
1





V
1
(V)








RESULT:
Thus the characteristic oI Photo Diode is studied.

CIRCUIT DIAGRAM:
(0-500)A



A



(0-30)V
(0-30)V (0-10)V LAMP 6 VDC K RPS
RPS








TABULAR COLUMN:

S.No.
V
1
V
2
V
3

V
1
(V) I(A) V
1
(V) I(A) V
1
(V) I(A)













V
A
V
680O
1K O
11.CHARACTERISTICTS OF PHOTO TRANSISTOR

Expt.No:
Date :


AIM:
To Study the Characteristics oI phototransistor


APPARATUS REQUIRED:

S.No. Equipments and components Range Quantity

1 Regulator power supply (0-30)V 1
2 Ammeter (1-500)A 1
3 Voltmeter (0-30)V 1
(0-10)V 1
4 Resistor 680O 1
1KO 1
5 Photo transistor - 1
6 DC bulb - 1



THEORY:
It is a transistor with an open base; there exists a small collector current
consisting oI thermally produced minority carriers and surIace leakage. By
exposing the collector junction to light, a manuIacturer, can produce a
phototransistor, a transistor that has more sensitivity to light than a photo diode.
Because the base lead is open all the reverse current is Iorced into the base oI the
transistor the resulting collector current is I
cEO
.dc.I
r
The main diIIerence between a phototransistor and a photodiode in the current
gain, .dc the same amount oI light striking both devices produces
.dc lines more current in a phototransistor than in a photodiode.





PROCEDURE:

1. Rig up the circuit as per the circuit diagram.
2. Maintain a known distance (say 5cm) between the DC bulb and the
Photo transistor.
3. Set the voltage oI the bulb (say 2 V) vary the voltage oI the diode
insteps oI 1 V and note down the corresponding diode current I
r.

4. Repeat the above procedure Ior the various voltages oI DC bulb.
5. Plot the graph V
D,
V
S,
I
r
Ior a constant bulb Voltage.






MODEL GRAPH:

I(A)



V
2




V
1





V
1
(V)





RESULT:
Thus the characteristic oI Photo Transistor is studied.








CIRCUIT DIAGRAM:
(0-500)A




LAMP 6 VDC



BC107 (0-30)V
(0-30)V (0-10)V








TABULAR COLUMN:


S.No.
V
1
V
2

V
1
(V) I(A) V
1
(V) I(A)














C

B
V
A
V
680O
1K O