N Channel MOSFET level 1

NDrain NGate NGate NDrain NGate NDrain NGate NDrain

mosn1

NSource
(a)

NBulk

NSource
(b)

NBulk

NSource
(c)

NBulk

NSource
(d)

NBulk

Figure 1: N Channel MOSFET Level 1 model

Form: mosn1: instance name n1 n2 n3 n4 parameter list instance name is the model name, n1 is the drain node, n2 is the gate node, n3 is the source node, n4 is the bulk node. Parameters: Parameter vt0: Zero bias threshold voltage (V) kp: Transconductance parameter (A/V2 ) gamma: Bulk threshold parameter (V0.5 ) phi: Surface inversion potential (V) lambda: Channel-length modulation (1/V) pb: Bulk junction potential (V) tox: Oxide thickness (m) ld: Lateral diusion length (m) u0: Surface mobility (cm2 /V-s) fc: Forward bias junction t parameter nsub: Substrate doping (cm3 ) tpg: Gate material type nss: Surface state density (cm2 ) tnom: Nominal temperature (C) t: Device temperature (C) l: Device length (m) w: Device width (m) alpha: Impact ionization current coecient Type DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE Default value 0 2 105 0 0.6 0 0.8 1 107 0 600 0.5 1 1015 1 0 27 27 2 106 50 106 0 Required? no no no no no no no no no no no no no no no no no no

Example: 1

mosn1:m1 2 3 0 0 l=1.2u w=20u Description: FreeDa has the NMOS level 1 model based on the MOS level 1, Schichman-Hodges model in SPICE. The model uses the charge conservative Yang-Chatterjee model for modeling charge and capacitance. The physical constants used in the model evaluation are k q
0 Si OX

ni

Boltzmanns constant electronic charge free space permittivity permittivity of silicon permittivity of silicon dioxide intrinsic concentration of silicon @ 300 K

1.3806226 1023 J/K 1.6021918 1019 C 8.854214871 1012 F/m 11.7 0 3.9 0 1.45 1016 m3

Standard Calculations
Absolute temperatures (in kelvins, K) are used. The thermal voltage VT H (TN OM ) = The silicon bandgap energy EG (TN OM ) = 1.16 0.000702
2 4TN OM . TN OM + 1108

kTN OM . q

(1)

(2)

The dierence of the gate and bulk contact potentials MS = GAT E BULK . The gate contact potential GAT E 3.2 3.25 = 3.25 + EG TP G = 0 NMOS & TP G = 1 . NMOS & TP G = 1 (4) (3)

The contact potential of the bulk material BULK = 3.25 + EG for NMOS The capacitance per unit area of the oxide is . COX = TOX 2
OX

(5)

(6)

The eective length LEF F of the channel is reduced by the amount LD of the lateral diusion at the source and drain regions: (7) LEF F = L 2LD Similarly the eective length WEF F of the channel is reduced by the amount WD of the lateral diusion at the edges of the channel. WEF F = W 2WD (8)

Process Oriented Model

If omitted, device parameters are computed from process parameters using defaults if necessary provided that both TOX and NSUB are specied. If either TOX or NSUB is not specied then the critical device parameters must be specied. If KP is not specied in the model statement then KP = 0 /COX If PHI is not specied, then it is evaluated as PHI = 2B = 2VT H (TN OM ) ln NSUB ni (10) (9)

If GAMMA is not specied in the model statement then 2 SiqN SU B GAMMA = = COX If VTO is not specied in the model statement then it is evaluated as VTO = VF B + where VF B is VF B = MS 2B + 2B q NSS COX

(11)

(12)

(13)

Temperature Dependence
Temperature eects are incorporated as follows where T and TNOM are absolute temperatures in Kelvins (K). VT H = kT q
3/2

(14) (15) (16) (17)

KP (T ) = KP(TN OM /T )3/2 (T ) = 0 (TN OM /T ) T T 2B (T ) = 2B 3VT H ln + EG (TN OM EG (T ) TN OM TN OM 3

DC Current Calculations
The Schichman-Hodges model computes the current of the MOS device in only three regions, cuto, linear and saturation. The regions are dened as: cuto region: linear region: saturation region: where the threshold voltage is VT = Then VF B + 2B + 2B VBS VF B + 2B VBS 2B VBS < 2B (18) VGS < VT VGS > VT and VDS < VGS VT VGS > VT and VDS > VGS VT

0 cuto region W EF F KP ID = LEF F 2 (1 + VDS )VDS [2(VGS VT ) VDS ] linear region WEF F KP (1 + VDS ) [VGS VT ]2 saturation region LEF F 2

(19)

Yang-Chatterjee ChargeModel
Once the DC channel current has been calculated, the charge at each terminal of the MOS device is computed. The charge values are used to compute the AC current ow through each terminal according to the Yang-Chatterjee model. This model ensures continuity of the charges and capacitances throughout dierent regions of operation. The intermediate quantities are: VF B = Vto and Co = COX Wef f Lef f (21) The charge is computed for for each of the four regions of operation, accumulation, cut-o, saturation and linear. Accumulation region VGS VF B + VBS Qd Qs Qb = 0 = 0 = Co (VGS VF B VBS ) 4 (22) (23) (24) 2B 2B (20)

Cut-o region VF B + VBS < VGS Vth Qd Qs Qb = = = 0 0 Co GAMMA {1 + 2

2

(25) (26) 1+ 4 (VGS VF B VBS ) } GAMMA2 (27)

Saturation region Vth < VGS VDS + Vth Qd Qs Qb Linear region VGS > VDS + Vth Qd Qs Qb = = = Co [ Co [
2 VDS Vth VDS 2

= = =

0 2 Co (VGS Vth ) 3 Co (VF B PHI Vth )

(28) (29) (30)

8 (VGS

3 VGS Vth VDS ] 2 4 1 VGS Vth + VDS ] 2 4

(31) (32) (33)

2 VDS 24 (VGS Vth Co (VF B PHI Vth )

VDS 2 )

The nal currents at the transistor nodes are given by Id Ig Is = = = ID + dQg dt ID + dQs dt dQd dt (34) (35) (36)

Notes: This is the M element in the SPICE compatible netlist. The unmodied Yang-Chatterjee charge model has a charge partition scheme in the saturation region that sets the drain charge to zero. This results in a loss of the high-frequency current roll-o at the drain node in saturation. Credits: Name Aaron Walker nmkripla@unity.ncsu.edu Aliation NC State University Date August 2002 Links www.ncsu.edu www.ncsu.edu