Ee101 Diodes 1

EE101: Diode circuits
M. B. Patil
mbpatil@ee.iitb.ac.in Department of Electrical Engineering Indian Institute of Technology Bombay
M. B. Patil, IIT Bombay
Diodes
flow
pressure
Diodes
flow
pressure
* A diode may be thought of as an electrical counterpart of a directional valve (check valve).
Diodes
flow
pressure
* A diode may be thought of as an electrical counterpart of a directional valve (check valve). * A check valve presents a small resistance if the pressure p > 0, but blocks the ow (i.e., presents a large resistance) if p < 0.
Diodes
flow
pressure
* A diode may be thought of as an electrical counterpart of a directional valve (check valve). * A check valve presents a small resistance if the pressure p > 0, but blocks the ow (i.e., presents a large resistance) if p < 0. * Similarly, a diode presents a small resistance in the forward direction and a large resistance in the reverse direction.
Diodes
flow
pressure
* A diode may be thought of as an electrical counterpart of a directional valve (check valve). * A check valve presents a small resistance if the pressure p > 0, but blocks the ow (i.e., presents a large resistance) if p < 0. * Similarly, a diode presents a small resistance in the forward direction and a large resistance in the reverse direction. * In the forward direction, the diode resistance RD = V /i would be a function of V . However, it is often a good approximation to treat it as a constant (small) resistance.
Diodes
flow
pressure
* A diode may be thought of as an electrical counterpart of a directional valve (check valve). * A check valve presents a small resistance if the pressure p > 0, but blocks the ow (i.e., presents a large resistance) if p < 0. * Similarly, a diode presents a small resistance in the forward direction and a large resistance in the reverse direction. * In the forward direction, the diode resistance RD = V /i would be a function of V . However, it is often a good approximation to treat it as a constant (small) resistance. * In the reverse direction, the diode resistance is much larger and may often be treated as innite (i.e., the diode may be replaced by an open circuit).
Simple models: Ron /Ro model
i V
i V
R = Ron if V > 0 R = Ro if V < 0
i V
i V
* Since the resistance is dierent in the forward and reverse directions, the i V relationship is not symmetric.
i V
i V
* Since the resistance is dierent in the forward and reverse directions, the i V relationship is not symmetric. * Examples:
i V
i V
* Since the resistance is dierent in the forward and reverse directions, the i V relationship is not symmetric. * Examples:
10
Ron = 5 Ro = 500 i (mA)
Ron = 0.1 Ro = 1 M
0 5 4 3 2 1 0 1 5 4 3 2 1 0 1
V (Volts)
V (Volts)
Simple models: ideal switch
i V
i i
S closed, V > 0 V S open, V < 0
i V
i V
i i
i V
* V > 0 Volts S is closed (a perfect contact), and it can ideally carry any amount of current. The voltage drop across the diode is 0 V .
i V
i i
i V
* V > 0 Volts S is closed (a perfect contact), and it can ideally carry any amount of current. The voltage drop across the diode is 0 V . * V < 0 Volts S is open (a perfect open circuit), and it can ideally block any reverse voltage. The current through the diode is 0 A.
i V
i i
i V
* V > 0 Volts S is closed (a perfect contact), and it can ideally carry any amount of current. The voltage drop across the diode is 0 V . * V < 0 Volts S is open (a perfect open circuit), and it can ideally block any reverse voltage. The current through the diode is 0 A. * The actual values of V and i for a diode in a circuit get determined by the i -V relationship of the diode and the constraints on V and i imposed by the circuit.
Shockley diode equation
i V
i
p n
V i = Is exp 1 , where VT = kB T /q . VT
i V i
p n
kB = Boltzmanns constant = 1.38 1023 J /K . q = electron charge = 1.602 1019 Coul. T = temperature in K . VT 25 mV at room temperature (27 C).
i V i
p n
* Is is called the reverse saturation current.
i V i
p n
* Is is called the reverse saturation current. * For a typical low-power silicon diode, Is is of the order of 1013 A.
i V i
p n
* Is is called the reverse saturation current. * For a typical low-power silicon diode, Is is of the order of 1013 A. * Although Is is very small, it gets multiplied by a large exponential factor, giving a diode current of several mA for V 0.7 V .
i V i
p n
* Is is called the reverse saturation current. * For a typical low-power silicon diode, Is is of the order of 1013 A. * Although Is is very small, it gets multiplied by a large exponential factor, giving a diode current of several mA for V 0.7 V . * The turn-on voltage (Von ) of a diode depends on the value of Is . Von may be dened as the voltage at which the diode starts carrying a substantial forward current (say, a few mA). For a silicon diode, Von 0.7 V . For a GaAs diode, Von 1.1 V .

V i = Is exp 1 , where VT = kB T /q . VT Example: Is = 1 1013 A, VT = 25 mV .
i V
i
p n

V i = Is exp 1 , where VT = kB T /q . VT Example: Is = 1 1013 A, VT = 25 mV . i (Amp) 0.4691011 0.229109 0.110107 0.525106 0.251104 0.120102 0.260102 0.565102 0.122101 0.265101 0.575101 0.125
i V
i
p n
V 0.1 0.2 0.3 0.4 0.5 0.6 0.62 0.64 0.66 0.68 0.70 0.72
x = V /VT 3.87 7.74 11.6 15.5 19.3 23.2 24.0 24.8 25.5 26.3 27.1 27.8
ex 0.479102 0.229104 0.110106 0.525107 0.251109 0.1201011 0.2601011 0.5651011 0.1221012 0.2651012 0.5751012 0.1251013

V i = Is exp 1 , where VT = kB T /q . VT Example: Is = 1 1013 A, VT = 25 mV . i (Amp) 0.4691011 0.229109 0.110107 0.525106 0.251104 0.120102 0.260102
i (mA) i (Amp) 1 log scale
i V
i
p n
V 0.1 0.2 0.3 0.4 0.5 0.6 0.62 0.64 0.66 0.68 0.70 0.72
x = V /VT 3.87 7.74 11.6 15.5 19.3 23.2 24.0 24.8 25.5 26.3 27.1 27.8
ex 0.479102 0.229104 0.110106 0.525107 0.251109 0.1201011 0.2601011 0.5651011 0.1221012 0.2651012 0.5751012 0.1251013
10-6
10-12
100 80 60 40 20 0 linear scale
0.565102 0.122101 0.265101 0.575101 0.125
0.2
0.4 V (Volts)
0.6
0.8
Shockley equation and simple models

i V i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .

i V
100 80 i (mA) 60 40 20 0 Model 1:
i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .
V Von
V > Von V < Von
(open circuit) Shockley equation
Von = 0.7 V
0 0.2
Model 1 0.4 V (Volts) 0.6 0.8
Von

i V
100 80 i (mA) 60 40 20 0 Model 1:
i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .
V Von
Model 2:
V > Von V < Von
V > Von V < Von
Von
Ron
(open circuit) Shockley equation Model 2 0.4 V (Volts) 0.6
slope = 1/Ron
Von = 0.7 V
0 0.2
Model 1 0.4 V (Volts) 0.6 0.8 0
Von = 0.668 V Ron = 0.5

0.2
0.8
Von
Von

i V
100 80 i (mA) 60 40 20 0 Model 1:
i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .
V Von
Model 2:
V > Von V < Von
V > Von V < Von
Von
Ron
slope = 1/Ron
Von = 0.7 V
0 0.2
Model 1 0.4 V (Volts) 0.6 0.8 0
Von = 0.668 V Ron = 0.5

0.2
0.8
Von
Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other resistances in the circuit.

i V
100 80 i (mA) 60 40 20 0 Model 1:
i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .
V Von
Model 2:
V > Von V < Von
V > Von V < Von
Von
Ron
slope = 1/Ron
Von = 0.7 V
0 0.2
Model 1 0.4 V (Volts) 0.6 0.8 0
Von = 0.668 V Ron = 0.5

0.2
0.8
Von
Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other resistances in the circuit. * If Von is much smaller than other relevant voltages in the circuit, we can use Von 0 V , and the diode model reduces to the ideal diode model seen earlier.

i V
100 80 i (mA) 60 40 20 0 Model 1:
i
p n
i = Is e
V/VT 1 , Is = 1013 A , VT = 25 mV .
V Von
Model 2:
V > Von V < Von
V > Von V < Von
Von
Ron
slope = 1/Ron
Von = 0.7 V
0 0.2
Model 1 0.4 V (Volts) 0.6 0.8 0
Von = 0.668 V Ron = 0.5

0.2
0.8
Von
Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other resistances in the circuit. * If Von is much smaller than other relevant voltages in the circuit, we can use Von 0 V , and the diode model reduces to the ideal diode model seen earlier. * Note that the battery shown in the above models is not a source of power! It can only absorb power (see the direction of the current), causing heat dissipation.
Reverse breakdown
40
i
20 i (mA)
20 6
V (Volts)
Reverse breakdown
40
i
20 i (mA)
20 6
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied voltage.
Reverse breakdown
40
i
20 i (mA)
20 6
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied voltage. * A real diode cannot withstand indenitely large reverse voltages and breaks down at a certain voltage called the breakdown voltage (VBR ).
Reverse breakdown
40
i
20 i (mA)
20 6
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied voltage. * A real diode cannot withstand indenitely large reverse voltages and breaks down at a certain voltage called the breakdown voltage (VBR ). * When the reverse bias VR > VBR , the diode allows a large amount of current. If the current is not constrained by the external circuit, the diode would get damaged.
Reverse breakdown
40
i
20 i (mA)
0 Symbol for a Zener diode 20 6
V (Volts)
Reverse breakdown
40
i
20 i (mA)
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few thousand Volts! Generally, higher the breakdown voltage, higher is the cost.
Reverse breakdown
40
i
20 i (mA)
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few thousand Volts! Generally, higher the breakdown voltage, higher is the cost. * Diodes with high VBR are generally used in power electronics applications and are therefore also designed to carry a large forward current (tens or hundreds of Amps).
Reverse breakdown
40
i
20 i (mA)
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few thousand Volts! Generally, higher the breakdown voltage, higher is the cost. * Diodes with high VBR are generally used in power electronics applications and are therefore also designed to carry a large forward current (tens or hundreds of Amps). * Typically, circuits are designed so that the reverse bias across any diode is less than the VBR rating for that diode.
Reverse breakdown
40
i
20 i (mA)
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few thousand Volts! Generally, higher the breakdown voltage, higher is the cost. * Diodes with high VBR are generally used in power electronics applications and are therefore also designed to carry a large forward current (tens or hundreds of Amps). * Typically, circuits are designed so that the reverse bias across any diode is less than the VBR rating for that diode. * Zener diodes typically have VBR of a few Volts, which is denoted by VZ . They are often used to limit the voltage swing in electronic circuits.
Diode types
Apart from their use as switches, diodes are also used for several other purposes. The choice of materials used, fabrication techniques, and packaging depend on the functionality expected from the device.
Diode types
Apart from their use as switches, diodes are also used for several other purposes. The choice of materials used, fabrication techniques, and packaging depend on the functionality expected from the device. * Light-emitting diodes (LEDs) emit light when a forward bias is applied. Typically, LEDs are made of III-V semiconductors. An LED emits light of a specic wavelength (e.g., red, green, yellow, blue). White LEDs combine individual LEDs that emit the three primary colors (red, green, blue) or use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light.
Diode types
Apart from their use as switches, diodes are also used for several other purposes. The choice of materials used, fabrication techniques, and packaging depend on the functionality expected from the device. * Light-emitting diodes (LEDs) emit light when a forward bias is applied. Typically, LEDs are made of III-V semiconductors. An LED emits light of a specic wavelength (e.g., red, green, yellow, blue). White LEDs combine individual LEDs that emit the three primary colors (red, green, blue) or use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light. * Semiconductor lasers are essentially light-emitting diodes with structural modications that establish conditions for coherent light.
Diode types
Apart from their use as switches, diodes are also used for several other purposes. The choice of materials used, fabrication techniques, and packaging depend on the functionality expected from the device. * Light-emitting diodes (LEDs) emit light when a forward bias is applied. Typically, LEDs are made of III-V semiconductors. An LED emits light of a specic wavelength (e.g., red, green, yellow, blue). White LEDs combine individual LEDs that emit the three primary colors (red, green, blue) or use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light. * Semiconductor lasers are essentially light-emitting diodes with structural modications that establish conditions for coherent light.
(source: wikipedia)
Diode types
* Solar cells are generally silicon diodes designed to generate current eciently when solar radiation is incident on the device. A solar panel has a large number of individual solar cells connected in series/parallel conguration. A solar cell can be modelled as a diode in parallel with a current source (representing the photocurrent). In addition, parasitic series and shunt resistances need to be considered.
Diode types
Rseries
p photo current
Rshunt
Diode types
Rseries
p photo current
Rshunt
* Photodiodes are used to detect optical signals (DC or time-varying) and to convert them into electrical signals which can be subsequently processed by electronic circuits. They are used in bre-optic communication systems, image processing, etc. A photodiode works on the same principle as a solar cell, i.e., it converts light into a current. However, its design is optimized for high-sensitivity, low-noise, or high-frequency operation, depending on the application.
Diode circuit analysis
* In DC situations, for each diode in the circuit, we need to establish whether it is on or o, replace it with the corresponding equivalent circuit, and then obtain the quantities of interest.
* In DC situations, for each diode in the circuit, we need to establish whether it is on or o, replace it with the corresponding equivalent circuit, and then obtain the quantities of interest. * In transient analysis, we need to nd the time points at which a diode turns on or o, and analyse the circuit in intervals between these time points.
* In DC situations, for each diode in the circuit, we need to establish whether it is on or o, replace it with the corresponding equivalent circuit, and then obtain the quantities of interest. * In transient analysis, we need to nd the time points at which a diode turns on or o, and analyse the circuit in intervals between these time points. * In AC (small-signal) situations, the diode can be replaced by its small-signal model, and phasor analysis is used. We will illustrate this procedure for a BJT amplier later.
* In DC situations, for each diode in the circuit, we need to establish whether it is on or o, replace it with the corresponding equivalent circuit, and then obtain the quantities of interest. * In transient analysis, we need to nd the time points at which a diode turns on or o, and analyse the circuit in intervals between these time points. * In AC (small-signal) situations, the diode can be replaced by its small-signal model, and phasor analysis is used. We will illustrate this procedure for a BJT amplier later. * Note that there are diode circuits in which the exponential nature of the diode I-V relationship is made use of. For these circuits, computer simulation would be required to solve the resulting non-linear equations.
Diode circuit example

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
C
VD

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
C Case 1: D is off. 6k A B i
VD
R1
36 V
R2
3k
R3
1k

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
VD
R1
36 V
R2
3k
R3
1k
VAB = VAC =
3 36 = 12 V , 9 which is not consistent with our assumption of D being o.

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
VD
R1
36 V
R2
3k
R3
1k
VAB = VAC =
3 36 = 12 V , 9 which is not consistent with our assumption of D being o.
D must be on.

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
C Case 1: D is off. 6k A B i Case 2: D is on. 6k A
VD
0.7 V
B i
R1
36 V
R1 R3
1k 36 V
R2
3k
R2
3k
R3
1k
3 VAB = VAC = 36 = 12 V , 9 which is not consistent with our assumption of D being o. D must be on.

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
VD
0.7 V
B i
R1
36 V
R1 R3
1k 36 V
R2
3k
R2
3k
R3
1k
Taking VC = 0 V, VA 36 VA VA 0.7 + + = 0, 6k 3k 1k VA = 4.47 V, i = 3.77 mA .

6k A D B i=?
R1
36 V
ID
R2
3k
R3
1k
0.7 V
VD
0.7 V
B i
R1
36 V
R1 R3
1k 36 V
R2
3k
R2
3k
R3
1k
Taking VC = 0 V, VA 36 VA VA 0.7 + + = 0, 6k 3k 1k VA = 4.47 V, i = 3.77 mA .
Remark: Often, we can gure out by inspection if a diode is on or o.
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
(a) Plot Vo versus Vi for 5 V < Vi < 5 V . (b) Plot Vo (t) for a triangular input: 5 V to +5 V, 500 Hz .
i1
B
i2
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
i1
B
i2
First, let us show that D1 on D2 o, and D2 on D1 o.
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
i1
B
i2
First, let us show that D1 on D2 o, and D2 on D1 o. Consider D1 to be on VAB = 0.7 + 1 + i1 R1 .
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
i1
B
i2
First, let us show that D1 on D2 o, and D2 on D1 o. Consider D1 to be on VAB = 0.7 + 1 + i1 R1 . Note that i1 > 0, since D1 can only conduct in the forward direction. VAB > 1.7 V D2 cannot conduct.
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
i1
B
i2
First, let us show that D1 on D2 o, and D2 on D1 o. Consider D1 to be on VAB = 0.7 + 1 + i1 R1 . Note that i1 > 0, since D1 can only conduct in the forward direction. VAB > 1.7 V D2 cannot conduct. Similarly, if D2 is on, VBA > 0.7 V , i.e., VAB < 0.7 V D1 cannot conduct.
R
1k
ID D2
1V
D1
Vi R1
1.5 k
R2
0.5 k
Vo
0.7 V
VD
i1
B
i2
First, let us show that D1 on D2 o, and D2 on D1 o. Consider D1 to be on VAB = 0.7 + 1 + i1 R1 . Note that i1 > 0, since D1 can only conduct in the forward direction. VAB > 1.7 V D2 cannot conduct. Similarly, if D2 is on, VBA > 0.7 V , i.e., VAB < 0.7 V D1 cannot conduct. Clearly, D1 on D2 o, and D2 on D1 o.
Diode circuit example (continued)
* For 0.7 V < Vi < 1.7 V , both D1 and D2 are o. no drop across R , and Vo = Vi . (1)
1k
D1
D2
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
* For 0.7 V < Vi < 1.7 V , both D1 and D2 are o. no drop across R , and Vo = Vi . (1) * For Vi < 0.7 V , D2 conducts. Vo = 0.7 i2 R2 . Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. Vi + 0.7 , and i2 = R + R2 R2 R V i 0.7 . (2) Vo = 0.7 R2 i2 = R + R2 R + R2
1k
D1
D2
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
* For 0.7 V < Vi < 1.7 V , both D1 and D2 are o. no drop across R , and Vo = Vi . (1) * For Vi < 0.7 V , D2 conducts. Vo = 0.7 i2 R2 . Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. Vi + 0.7 , and i2 = R + R2 R2 R V i 0.7 . (2) Vo = 0.7 R2 i2 = R + R2 R + R2 * For Vi > 1.7 V , D1 conducts. Vo = 0.7 + 1 + i1 R1 . Use KVL to get i1 : Vi + i1 R + 0.7 + 1 + i1 R1 = 0. V i 1.7 , and i1 = R + R1 R1 R Vo = 1.7 + R1 i1 = Vi + 1.7 . (3) R + R1 R + R1
1k
D1
D2
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
* For 0.7 V < Vi < 1.7 V , both D1 and D2 are o. no drop across R , and Vo = Vi . (1) * For Vi < 0.7 V , D2 conducts. Vo = 0.7 i2 R2 . Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. Vi + 0.7 , and i2 = R + R2 R2 R V i 0.7 . (2) Vo = 0.7 R2 i2 = R + R2 R + R2 * For Vi > 1.7 V , D1 conducts. Vo = 0.7 + 1 + i1 R1 . Use KVL to get i1 : Vi + i1 R + 0.7 + 1 + i1 R1 = 0. V i 1.7 , and i1 = R + R1 R1 R Vo = 1.7 + R1 i1 = Vi + 1.7 . (3) R + R1 R + R1 * Using Eqs. (1)-(3), we plot Vo versus Vi . (SEQUEL le: ee101 diode circuit 1.sqproj)
1k
D1
D2
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
* For 0.7 V < Vi < 1.7 V , both D1 and D2 are o. no drop across R , and Vo = Vi . (1) * For Vi < 0.7 V , D2 conducts. Vo = 0.7 i2 R2 . Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. Vi + 0.7 , and i2 = R + R2 R2 R V i 0.7 . (2) Vo = 0.7 R2 i2 = R + R2 R + R2 * For Vi > 1.7 V , D1 conducts. Vo = 0.7 + 1 + i1 R1 . Use KVL to get i1 : Vi + i1 R + 0.7 + 1 + i1 R1 = 0. V i 1.7 , and i1 = R + R1 R1 R Vo = 1.7 + R1 i1 = Vi + 1.7 . (3) R + R1 R + R1 * Using Eqs. (1)-(3), we plot Vo versus Vi . (SEQUEL le: ee101 diode circuit 1.sqproj)
5 5
1k
D1
D2
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
Vo
5
D1 o D2 on
D1 o D2 o
D1 on D2 o
0 0.7 1.7
Vi

Vo R
1k A 5
Vo
5
D1 o D2 D2 on
D1 o D2 o
D1
D1 on D2 o
Vi R1
1.5 k
1V
Vo R2
0.5 k
i1
B
i2
5 5 5 0 5
0 0
5 5
Vi
t1
1 t2
2 t (msec) 2 t (msec)
Point-by-point construction of Vo versus t: Two time points, t1 and t2, are shown as examples.
0 0
Vi
0.5 1 1.5 2 t (msec) 2 t (msec) 1
D 1k R1 Vi R2 0.5 k Vo VD ID
0.7 V Plot Vo versus Vi for 5 V < Vi < 5 V .
D 1k R1 Vi R2 0.5 k Vo VD ID Vi 0.7 V Plot Vo versus Vi for 5 V < Vi < 5 V . R1
0.7 V
R2
Vo
D on
Vo = Vi 0.7
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
At what value of Vi will the diode turn on?
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
At what value of Vi will the diode turn on? R1 In the o state, VD = Vi . R1 + R2
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
At what value of Vi will the diode turn on? R1 In the o state, VD = Vi . R1 + R2 For D to change to the on state, VD = 0.7 V . R1 + R2 i.e., Vi = 0.7 = 1.05 V . R1
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
At what value of Vi will the diode turn on? R1 In the o state, VD = Vi . R1 + R2 For D to change to the on state, VD = 0.7 V . R1 + R2 i.e., Vi = 0.7 = 1.05 V . R1 (SEQUEL le: ee101 diode circuit 2.sqproj)
0.7 V
VD
R1 R2 Vo Vi R2 Vo
D on
D off
Vo = Vi 0.7
Vo =
R2 V R1 + R2 i
At what value of Vi will the diode turn on? R1 In the o state, VD = Vi . R1 + R2 For D to change to the on state, VD = 0.7 V . R1 + R2 i.e., Vi = 0.7 = 1.05 V . R1 (SEQUEL le: ee101 diode circuit 2.sqproj)
Vo
5
D o
D on
5 5
0 1.05
Vi
R1
1k
D1
D2
Vi
R2
1k
Vo
Von = 0.7 V, VZ = 5 V. Plot Vo versus Vi .
R1
1k
D1
D2
Vi
R2
1k
Vo
For a current to ow, we have two possibilities: D1 on (forward), D2 in reverse breakdown R1 i Vi

1k 0.7 V 5V
R2
Vo
1k
Vi 5.7 R R1 + R2 2 Since i > 0, this can happen only when Vi > 5.7 V. Vo = i R2 =
R1
1k
D1
D2
Vi
R2
1k
Vo

1k 0.7 V 5V
D2 on (forward), D1 in reverse breakdown R1 i

1k 5V 0.7 V
R2
Vo
Vi
R2
Vo
1k
1k
Vo = i R2 =
Vi + 5.7 R R1 + R2 2
Since i > 0, this can happen only when Vi < -5.7 V.

Vo R1
1k
D1
D2
1.5
Vi
R2
1k
Vo
1.5 8
D1 r.b. (breakdown)
D1 r.b.
D2 r.b.
8 Vi D2 r.b. (breakdown)

1k 0.7 V 5V

1k 5V 0.7 V
R2
Vo
Vi
R2
Vo
1k
1k
Vo = i R2 =
Vi + 5.7 R R1 + R2 2

Vo R1
1k
D1
D2
1.5
Vi
R2
1k
Vo
1.5 8
D1 r.b. (breakdown)
D1 r.b.
D2 r.b.
8 Vi D2 r.b. (breakdown)

1k 0.7 V 5V

1k 5V 0.7 V
R2
Vo
Vi
R2
Vo
1k
1k
Vo = i R2 =
Vi + 5.7 R R1 + R2 2
(SEQUEL le: ee101 diode circuit 3.sqproj)

Diode circuit example (voltage limiter)

R
1k
D1 Vi D2 Vo

R
1k
D1 Vi D2 Vo
For a current to ow, we have two possibilities: D1 on (forward), D2 in reverse breakdown R

i 1k
D1 Vi C
0.7 V
Vo
Vo = 5.7 V Vi > 5.7 V
D2
5V

R
1k
D1 Vi D2 Vo

i 1k i
D2 on (forward), D1 in reverse breakdown R

1k
D1 Vi C
0.7 V
D1 Vo Vo = 5.7 V Vi > 5.7 V

5V
Vi
A D2
0.7 V
Vo
Vo = 5.7 V Vi < 5.7 V
D2
5V

R
1k
D1 Vi D2 Vo

i 1k i

1k
D1 Vi C
0.7 V
D1 Vo Vo = 5.7 V Vi > 5.7 V

5V
Vi
A D2
0.7 V
Vo
Vo = 5.7 V Vi < 5.7 V
D2
5V
In the range, 5.7 V < Vi < 5.7 V, no current ows, and Vo = Vi .

R Vo 8
1k
D1 Vi D2 Vo

8 8
A
4
B
0 4
C
8
Vi

i 1k i

1k
D1 Vi C
0.7 V
D1 Vo Vo = 5.7 V Vi > 5.7 V

5V
Vi
A D2
0.7 V
Vo
Vo = 5.7 V Vi < 5.7 V
D2
5V
In the range, 5.7 V < Vi < 5.7 V, no current ows, and Vo = Vi .

Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
Let Vo (t ) = 0 V at t = 0, and assume the diode to be ideal, with Von = 0 V .
Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
Let Vo (t ) = 0 V at t = 0, and assume the diode to be ideal, with Von = 0 V . For 0 < t < T /4, Vi rises from 0 to Vm . As a result, the capacitor charges.
Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
Let Vo (t ) = 0 V at t = 0, and assume the diode to be ideal, with Von = 0 V . For 0 < t < T /4, Vi rises from 0 to Vm . As a result, the capacitor charges. Since the on resistance of the diode is small, time constant charging process is instantaneous Vo (t ) = Vi (t ). T /4; therefore the
Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
For t > T /4, Vi starts falling. The capacitor holds the charge it had at t = T /4 since the diode prevents discharging.
Peak detector
-10 Vo (V) D Vi C Vo 10
0 1 time (msec) 2
0 Vi (V)
For t > T /4, Vi starts falling. The capacitor holds the charge it had at t = T /4 since the diode prevents discharging. SEQUEL le: ee101 diode circuit 5.sqproj
Peak detector (continued)
-10 Vo (V) D Vi C 1 F R
5k
0 Vo 10
0 1 time (msec) 2
Vi (V)
-10 Vo (V) D Vi C 1 F R
5k
0 Vo 10
0 1 time (msec) 2
Vi (V)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and the capacitor voltage falls after reaching the peak.
-10 Vo (V) D Vi C 1 F R
5k
0 Vo 10
0 1 time (msec) 2
Vi (V)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and the capacitor voltage falls after reaching the peak. When Vi > Vo , the capacitor charges again. The time constant for the charging process is = RTh C , where RTh = R Ron is the Thevenin resistance seen by the capacitor, Ron being the on resistance of the diode.
-10 Vo (V) D Vi C 1 F R
5k
0 Vo 10
0 1 time (msec) 2
Vi (V)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and the capacitor voltage falls after reaching the peak. When Vi > Vo , the capacitor charges again. The time constant for the charging process is = RTh C , where RTh = R Ron is the Thevenin resistance seen by the capacitor, Ron being the on resistance of the diode. Since T , the charging process is instantaneous.
-10 Vo (V) D Vi C 1 F R
5k
0 Vo 10
0 1 time (msec) 2
Vi (V)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and the capacitor voltage falls after reaching the peak. When Vi > Vo , the capacitor charges again. The time constant for the charging process is = RTh C , where RTh = R Ron is the Thevenin resistance seen by the capacitor, Ron being the on resistance of the diode. Since T , the charging process is instantaneous.
SEQUEL le: ee101 diode circuit 5a.sqproj
Peak detector (with Von = 0.7 V )
-10 Vo (V) 0 R=1M 10 D Vi C 1 F R Vo -10 Vo (V) 0 R=5k 10

0 1 time (msec) 2
Vi (V)
Vi (V)

0 1 time (msec) 2
Vi (V)
Vi (V)
With Von = 0.7 V , the capacitor charges up to (Vm 0.7 V ).

0 1 time (msec) 2
Vi (V)
Vi (V)
With Von = 0.7 V , the capacitor charges up to (Vm 0.7 V ). Apart from that, the circuit operation is similar.

0 1 time (msec) 2
Vi (V)
Vi (V)
With Von = 0.7 V , the capacitor charges up to (Vm 0.7 V ). Apart from that, the circuit operation is similar. SEQUEL le: ee101 diode circuit 5a.sqproj
Clamped capacitor
VC C Vi D iD Vo
20
Vo
10
VC
0 0 0.5 1 time (msec)
Vi
1.5 2
* Assume Von = 0 V for the diode. When D conducts, VD = Vo = 0 VC + Vi = 0, i.e., VC = Vi .
Clamped capacitor
VC C Vi D iD Vo
20
Vo
10
VC
0 0 0.5 1 time (msec)
Vi
1.5 2
* Assume Von = 0 V for the diode. When D conducts, VD = Vo = 0 VC + Vi = 0, i.e., VC = Vi . * VC can only increase with time (or remain constant) since iD can only be positive.
Clamped capacitor
VC C Vi D iD Vo
20
Vo
10
VC
0 0 0.5 1 time (msec)
Vi
1.5 2
* Assume Von = 0 V for the diode. When D conducts, VD = Vo = 0 VC + Vi = 0, i.e., VC = Vi . * VC can only increase with time (or remain constant) since iD can only be positive. * The net result is that the capacitor gets charged to a voltage VC = Vi , corresponding to the maxmimum negative value of Vi , and holds that voltage 0 (a constant). thereafter. Let us call this voltage VC
Clamped capacitor
VC C Vi D iD Vo
20
Vo
10
VC
0 0 0.5 1 time (msec)
Vi
1.5 2
0 + V (t ), which is a level-shifted version of V . * V o (t ) = V C (t ) + V i (t ) = V C i i
Clamped capacitor
VC C Vi D iD Vo
20
Vo
10
VC
0 0 0.5 1 time (msec)
Vi
1.5 2
0 + V (t ), which is a level-shifted version of V . * V o (t ) = V C (t ) + V i (t ) = V C i i
Voltage doubler
Diode clamp Peak detector
VC1
A B C
C1 D1
D2 C2
R 100 k
VA VB VC
Von = 0 V
20 10 0 10 0 1 2 3 4 5 6 time (msec) 7 8 9 10 20 10 0 10 0 1 2 3
Von = 0.7 V
4 5 6 time (msec)
10
Voltage doubler
VC1
A B C
C1 D1
D2 C2
R 100 k
VA VB VC
Von = 0 V
20 10 0 10 0 1 2 3 4 5 6 time (msec) 7 8 9 10 20 10 0 10 0 1 2 3
Von = 0.7 V
4 5 6 time (msec)
10
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from 0 to 2 Vm .
Voltage doubler
VC1
A B C
C1 D1
D2 C2
R 100 k
VA VB VC
Von = 0 V
20 10 0 10 0 1 2 3 4 5 6 time (msec) 7 8 9 10 20 10 0 10 0 1 2 3
Von = 0.7 V
4 5 6 time (msec)
10
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from 0 to 2 Vm . * The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant.
Voltage doubler
VC1
A B C
C1 D1
D2 C2
R 100 k
VA VB VC
Von = 0 V
20 10 0 10 0 1 2 3 4 5 6 time (msec) 7 8 9 10 20 10 0 10 0 1 2 3
Von = 0.7 V
4 5 6 time (msec)
10
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from 0 to 2 Vm . * The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant. * Note that it takes a few cycles to reach steady state. Plot VC 1 , iD 1 , iD 2 versus t and explain the initial behaviour of the circuit.
Voltage doubler
VC1
A B C
C1 D1
D2 C2
R 100 k
VA VB VC
Von = 0 V
20 10 0 10 0 1 2 3 4 5 6 time (msec) 7 8 9 10 20 10 0 10 0 1 2 3
Von = 0.7 V
4 5 6 time (msec)
10
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from 0 to 2 Vm . * The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant. * Note that it takes a few cycles to reach steady state. Plot VC 1 , iD 1 , iD 2 versus t and explain the initial behaviour of the circuit. (SEQUEL le: ee101 voltage doubler.sqproj)

Ee101 Diodes 1

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Ee101 Diodes 1

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EE101: Diode circuits

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

* A diode may be thought of as an electrical counterpart of a directional valve (check valve).

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

Simple models: Ron /Ro model

R = Ron if V > 0 R = Ro if V < 0

M. B. Patil, IIT Bombay

Simple models: Ron /Ro model

R = Ron if V > 0 R = Ro if V < 0

M. B. Patil, IIT Bombay

Simple models: Ron /Ro model

R = Ron if V > 0 R = Ro if V < 0

M. B. Patil, IIT Bombay

Simple models: Ron /Ro model

R = Ron if V > 0 R = Ro if V < 0

Ron = 5 Ro = 500 i (mA)

M. B. Patil, IIT Bombay

Simple models: ideal switch

S closed, V > 0 V S open, V < 0

M. B. Patil, IIT Bombay

Simple models: ideal switch

S closed, V > 0 V S open, V < 0

M. B. Patil, IIT Bombay

Simple models: ideal switch

S closed, V > 0 V S open, V < 0

M. B. Patil, IIT Bombay

Simple models: ideal switch

S closed, V > 0 V S open, V < 0

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

* Is is called the reverse saturation current.

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

M. B. Patil, IIT Bombay

Shockley diode equation

0.565102 0.122101 0.265101 0.575101 0.125

M. B. Patil, IIT Bombay

Shockley equation and simple models

Shockley equation and simple models

V > Von V < Von

(open circuit) Shockley equation

Model 1 0.4 V (Volts) 0.6 0.8

Shockley equation and simple models

V > Von V < Von

V > Von V < Von

(open circuit) Shockley equation

(open circuit) Shockley equation Model 2 0.4 V (Volts) 0.6