Buck Converter Efficiency S

Macro included excel tool

This simulation tool includes macro programming. A security warning appears every time you

Simulation Circuit

This simulator models a basic synchronous Buck converter. The structure of the Buck convert

Circuit parameters can be entered into the two spreadsheets titled Circuit 1 and Circuit 2
regions, as indicated in the diagram below. Area 1 contains the topology parameters of the
contains parameters specific to the driver device. Note that in this circuit, both the high-side
the circuits output inductor and capacitor. Finally, Areas 4 and 5 contain the parameters of
and low side MOSFETs are preloaded to the spreadsheet "MOSFETs". Users have the flexibil
MOSFETs in spreadsheet "Circuit1" or "Circuit2". MOSFETs that are not defined in spreadshee

The simulator will automatically run each time a user-definable parameter (denote
altered. No additional buttons need to be pressed in order to start the simulation

Any cell that is open to user input is marked with a yellow background. Cells with white bac
such, the white cells may not be directly edited by the user.

Efficiency simulation results

The user may view the efficiency results for Circuits 1 and 2 by clicking the tab titled Ef
simulation curve is a title that shows which MOSFETs, drivers, input voltages, output voltages
Dont Show Circuit 1 control whether the efficiency curve for Circuit 1 is displayed on th
displayed.

PowerLossComponents

By clicking the tab titled Power Loss Components, the user may view a chart explaining
circuits power loss, including conduction loss at the high-side MOSFET, switching loss at th
loss, deadtime power loss, driver loss for the high-side MOSFET, driver loss for the low-side
pull-down menus above the chart, the user may select which circuit is shown in the chart, as

MOSFET database and Driver database

In this simulator, the parameter values for both the high-side and the low-side single MOSF
catogrized in a seperate spreadsheet with title "Duals". Within the MOSFETs and "Duals
simulator. Users who wish to define a new MOSFET device must enter both the device nam
diode forward voltage VSD, transconductance gm, internal Rgin, thermal resistance, RDSon t
After the name and parameters of a user-defined MOSFET have been entered into the sprea
either Circuit1 or Circuit2. Devices that have not been defined within this spreadsheet wi

Similarly, a collection of driver devices has been pre-loaded into the spreadsheet titled Drive
by entering the device name and parameters. For the driver database, the user-defined para
resistance, rise delay time tpdh DRVH, fall delay time tpdl DRVH, external gate resistance Rg

either Circuit1 or Circuit2. Devices that have not been defined within this spreadsheet wi

Similarly, a collection of driver devices has been pre-loaded into the spreadsheet titled Drive
by entering the device name and parameters. For the driver database, the user-defined para
resistance, rise delay time tpdh DRVH, fall delay time tpdl DRVH, external gate resistance Rg

Single MOSFET database snap

nverter Efficiency Simulation Tool Tutorial

ning appears every time you open this tool. Click "Enable Macros" in the following figure.

tructure of the Buck converter circuit is shown below.

ed Circuit 1 and Circuit 2. In each of these spreadsheets, the circuit parameters are organized int
topology parameters of the synchronous Buck converter, including Vin, Vout, Iout, fs, Iripple, and Vri
is circuit, both the high-side and low-side MOSFETs share the same driver. Area 3 contains parameter
5 contain the parameters of the high-side and low-side MOSFETs. In this simulator, parameter values f
ETs". Users have the flexibiligy to define new MOSFETs in spreadsheet "MOSFETs" and then use the u
e not defined in spreadsheet "MOSFETs" can not be simulated in this simulator.

nable parameter (denoted by a yellow background) is

r to start the simulation

ground. Cells with white backgrounds contain the simulators results based upon the users input par

y clicking the tab titled Efficiency. An example of an efficiency simulation curve is shown below.
ut voltages, output voltages, and switching frequencies were used in the circuit. The buttons Show C
Circuit 1 is displayed on the graph. Similar buttons exist to control whether the efficiency curve for

may view a chart explaining the losses of power within the circuit. There are 9 components contrib
OSFET, switching loss at the high-side MOSFET, conduction loss of the low-side MOSFET, diode rever
driver loss for the low-side MOSFET, winding loss, PCB loss, and ESR loss at the output capacitors. B
uit is shown in the chart, as well as the output current at which the simulation is run.

Control of
output current

nd the low-side single MOSFETs have been pre-loaded into the spreadsheet titled MOSFETs. Dual M
the MOSFETs and "Duals" spreadsheet, users have the ability to define new MOSFET devices fo
t enter both the device name and the device parameters, including RDSon (Vg=4.5V), Coss(Q1), Qg
thermal resistance, RDSon temperature coefficient, RDSon (Vg=10V), and maximum drain-source cur
been entered into the spreadsheet, this new device becomes available for selection from the pull-dow
d within this spreadsheet will not appear within the pull-down menus.

he spreadsheet titled Drivers. Users may select from the pre-loaded driver devices, or may define a
base, the user-defined parameters include maximum driver voltage, high-side source resistance, highexternal gate resistance Rgex, and quiescent current.

ngle MOSFET database snapshot

NTD4804Nx1+NTMFS4897NFx1@300kHz; Vin=12V;Vout=1.2V;Driver=NCP5359A(5V)
Buck Circuit Parameters:
Input Voltage
Output Voltage
Switching Frequency
Duty Cycle
Period Ts (s)
Current Ripple Peak-to-Avg

Voltage Ripple
Maximum Output Current
Current Ripple Ratio
Voltage Ripple Ratio

Driver Parameters:
12
1.2
300
0.10
3.333
1.80
26.05
30
6.00
2.17
=IF(ISBLANK(B
1), "Default",
B1)

Enable auto zoom in and out?

Output L-C

V
V
kHz

Driver Voltage Vdr

Sourcing Resistance @ HS
Sinking Resistance @ HS
Rise Delay Time

us
A

Fall Delay Time

Quiescent Current

mV
A
%
%

Maxim Driver Voltage

tpdHDRVH
tpdLDRVH
MAX-Vcc

5.0
2.0
1.0
20.0
20.0
5.0
15.0

Capacitor
V

ns

ESR_Coutput
Capacitor Actual Value
Inductor

ns
mA

WindingResistance

Inductor Actual Value

PCB Resistance

High-Side MOSFET:

Low-Side MOSFET:

No

Buck converter circuit

Driver
Vcc

NCP5359A

NTD4804N

MOSFET Selected
Drain-to-Source On Resistance

RDS(on)

Total Gate Charge

QG(TOT)

Output Capacitance
Gate-to-Drain Charge

Coss

Gate-to-Source Charge
Gate Threshold Voltage

QGD
QGS
VGS(TH)

Forward Transconductance

gFS

Gate Resistance

RG

Junction-to-Ambient Thermal Resistance

RJA

RDS(on) Temperature Coefficient

External Gate Resistance
Number of HS MOSFET

Note:

1. Only single phase is simulated.

2. Simulaton is performed at 25 C and self heating of MOSFET is not taken into account.

Rgex

4.6
30
952
13.0
13.0
2.0
23
0.6
60.0
0.47
0.0
1

MOSFET Selected
m

Drain-to-Source On Resistance

nC

Total Gate Charge

pF
nC

Output Capacitance

Diode Reverse Recovery Charge

nC
V

SD Forward Diode Voltage

Junction-to-Ambient Thermal Resistance

RDSon Temperature Coefficient

C/W
%/C

External Gate Resistance

Number of LS MOSFET

For updates or suggestions, please contac

Zhiyang Chen
Zhiyang.Chen@onsemi.com

P5359A(5V)
ESR_Coutput
Capacitor Actual Value

Core loss
WindingResistance
Inductor Actual Value

5
88.00

m
uF

30
1.5
1.00

mW
m
uH

R-PCB

NTMFS4897NF
RDS(on)
QG(TOT)
Coss

QRR
VSD
RJA

2.0
40
1150
34
0.35
45.7
0.52

Rgex

pdates or suggestions, please contact

Zhiyang Chen
Zhiyang.Chen@onsemi.com

0.0
1

m
nC
pF

nC
V

C/W
%/C

NTD4804Nx1+NTMFS4897NFx1@300kHz; Vin=25V;Vout=1.2V;Driver=NCP5359A(5V)
Buck Circuit Parameters:

Driver Parameters:

Input Voltage

25

Output Voltage

1.2
300
0.05
3.333
1.90
18.03
30
6.35
1.50
=IF(ISBLANK(B

Switching Frequency
Duty Cycle
Period Ts (s)
Current Ripple Peak-to-Avg

Voltage Ripple
Maximum Output Current
Current Ripple Ratio
Voltage Ripple Ratio

1), "Default",
B1)
Enable auto zoom in and out?

kHz

Output L-C
Driver Voltage Vdr

Sourcing Resistance @ HS
Sinking Resistance @ HS

us

Rise Delay Time

Fall Delay Time

mV
A
%
%

tpdHDRVH
tpdLDRVH

Quiescent Current
Maxim Driver Voltage

MAX-Vcc

NCP5359A
5.0
2.0
1.0
20.0
20.0
5.0
15.0

Capacitor

5
88.00

m
uF

Actual Value

30
1.5
1.00

mW
m
uH

R-PCB

ESR_Coutput

Capacitor Actual Value

ns

Inductor

ns

Core loss

mA

WindingResistance

PCB Resistance

High-Side MOSFET:

Low-Side MOSFET:

No

Buck converter circuit

Driver
Vcc

NTD4804N

MOSFET Selected
Drain-to-Source On Resistance

RDS(on)

Total Gate Charge

Output Capacitance
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Threshold Voltage

QG(TOT)
Coss
QGD
QGS
VGS(TH)

Forward Transconductance

gFS

Gate Resistance

RG

Junction-to-Ambient Thermal Resistance

RDS(on) Temperature Coefficient

RJA

External Gate Resistance

Number of HS MOSFET

Rgex

4.6
30
952
13.0
13.0
2.0
23
0.6
60.0
0.47
0.0
1

NTMFS4897NF

MOSFET Selected
m
nC
pF
nC
nC
V
S

Drain-to-Source On Resistance

RDS(on)

Total Gate Charge QG(TOT)

Output Capacitance
Coss

Diode Reverse Recovery Charge

QRR

SD Forward Diode Voltage

Junction-to-Ambient Thermal Resistance

VSD
RJA

RDSon Temperature Coefficient

m
nC
pF

nC
V

C/W
%/C

C/W
%/C

External Gate Resistance

Number of LS MOSFET

Rgex

Note:

1. Only single phase is simulated.

2. Simulaton is performed at 25 C and self heating of MOSFET is not taken into account.

2.0
40
1150
34
0.35
45.7
0.52

For updates or suggestions, please contact

Zhiyang Chen
Zhiyang.Chen@onsemi.com

0.0
1

NTD4804Nx1+NTMFS4897NFx1@300k
Hz;
Vin=25V;Vout=1.2V;Driver=NCP5359A(
Vin=12V;Vout=1.2V;Driver=NCP5359A(5V)
5V)
NTD4804Nx1+NTMFS4897NFx1@300kHz;

95%

Efficiency

90%
85%
80%
75%

Circuit1
Efficiency

70%
65%
60%
0

12

15

18

21

Load Current (A)

24

27

30

2
Power Loss Components
for2.58E+001
Circuit

Unit: mW
730mW; 11.2%

6mW; 0.1%

407mW; 6.2%

1,095mW; 16.7%
2,311mW; 35.3%

79mW; 1.2%
63mW; 1.0%
108mW; 1.7%
255mW; 3.9%

1,484mW; 22.7%

MOSFET

NTD4804N
NTD4805N
NTD4806N
NTD4808N
NTD4809N
NTD4809NH
NTD4810N
NTD4813NH
NTD4815N
NTD4855N
NTD4856N
NTD4857N
NTD4858N
NTD4860N
NTD4863N
NTD4865N
NTD4904N
NTD4906N
NTD4909N
NTD4910N
NTD4913N
NTD4960N
NTD4963N
NTD4965N
NTD4969N
NTD4970N
NTMFS4821N
NTMFS4823N
NTMFS4825NFE
NTMFS4826NE
NTMFS4833N
NTMFS4834N
NTMFS4835N
NTMFS4836N
NTMFS4837NH
NTMFS4839NH
NTMFS4841N

RDSon
Coss(Q1) (pF)
(Vg=4.5V) (m)

4.6
5.8
7.5
9.8
11.0
10.0
11.0
18.5
18.3
4.6
5.3
6.3
7.3
8.9
12.8
13.9
4.0
6.5
9.5
10.6
12.5
10.0
13.6
5.3
13.2
13.2
8.4
15.1
2.0
6.5
2.3
3.4
3.9
4.8
6.4
7.8
8.5

952
610
480
334
315
331
284
201
181
740
567
495
405
342
253
223
976
642
487
460
370
342
220
664
347
306
282
163
1150
333
1200
960
670
565
450
355
348

Qgd (nC)

13.0
8.3
7.0
4.9
5.0
5.1
4.4
3.0
3.1
8.6
6.6
6.6
5.2
4.7
4.1
3.3
3.0
18.0
1.3
1.1
0.9
4.7
3.5
8.5
4.8
4.0
3.8
2.5
13.4
4.5
17.0
11.0
8.8
8.0
6.6
5.4
5.1

NTMFS4841NH
NTMFS4845N
NTMFS4846N
NTMFS4847N
NTMFS4851N
NTMFS4852N
NTMFS4897NF
NTMFS4898NF
NTMFS4899NF
NTMFS4921N
NTMFS4923NE
NTMFS4925N
NTMFS4926N
NTMFS4927N
NTMFS4933N
NTMFS4934N
NTMFS4935N
NTMFS4936N
NTMFS4937N
NTMFS4939N
NTMFS4941N
NTMFS4943N
NTMS4800N
NTMS4801N
NTMS4802N
NTMS4807N
NTMS4816N
NTMS4873NF
NTMS4916N
NTMS4917N
NTMS4920N
NTMS4935N
NTMS4937N
NTMS4939N
NTTFS4821N
NTTFS4823N
NTTFS4824N
NTTFS4928N
NTTFS4929N
NTTFS4930N
NTTFS4932N
NTTFS4937N
NTTFS4939N

8.5
3.4
3.8
5.0
6.5
2.4
2.0
3.4
5.8
8.4
3.7
6.4
7.5
8.5
1.5
2.2
3.7
3.9
5.0
6.0
7.1
8.2
20.0
9.5
4.3
6.5
12.7
12.0
9.0
11.3
4.6
5.3
7.1
9.0
8.6
13.0
5.7
8.5
12.7
22.7
3.6
4.8
5.9

325
650
562
466
333
970
1150
700
360
282
1264
483
390
366
3230
2355
1265
1014
840
642
570
446
225
288
880
562
220
345
401
325
1170
971
715
620
300
175
350
366
337
175
2
893
711

4.5
8.6
7.4
6.1
4.5
11.3
13.4
9.0
4.6
3.8
3.0
4.2
3.5
3.1
10.1
8.1
3.0
2.4
2.2
2.5
1.6
1.9
3.2
4.1
13.0
10.4
3.8
3.9
6.5
7.0
3.8
3.8
3.3
1.9
4.5
2.9
4.8
3.1
4.4
2.3
3.3
1.9
1.8

NTTFS4941N
NVMFS4841N
NVTFS4823N
NTMFS4983NF
NTTFS4985NF
NTMFS4985NF

7.0
9.2
13.5
2.5
4.13
4

573
348
175
1340
876
900

1.3
5.1
2.4
6.9
4.1
4.2

Qgs (nC)

Vth (V)

13.0
8.3
7.0
4.9
4.8
5.3
3.3
3.4
2.5
7.9
6.7
5.7
4.7
3.9
3.4
3.0
8.2
5.9
4.3
3.9
3.7
4.0
3.5
5.1
2.8
3.0
4.1
2.6
15.3
5.1
16.0
12.0
8.3
8.0
6.4
5.2
5.0

2
2
2
2
2
2.1
2
2
2
2
2
2
2
2
2
2
1.6
1.6
1.7
1.6
1.67
2
2
1.8
1.8
1.9
1.8
1.9
2
1.8
2
2
1.9
2
2.1
2.1
2

SD Diode
Transcon
Forward Voltage ductance Internal Rgin ()
(V)
gm (S)
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.9
0.85
0.8
0.85
0.8
0.8
0.9
0.8
0.85
0.8
0.85
0.9
0.85
0.85
0.35
0.8
0.7
0.75
0.75
0.8
0.8
0.8
0.825

23
17
14
11.4
9
9
9
6.7
6
80
73
77
55
48
45
39
76
52
52
40
39
48
40
52
36
34
54
26
90
62
30
35.2
21
24
67
60
16

0.6
0.8
1
1.1
2.4
0.75
2.4
0.55
2.6
0.8
0.6
0.6
0.7
0.75
0.5
0.75
1
1
1
1
1
1
1
1
1
0.8
1.1
1
0.7
0.9
1
1.4
1
1.2
0.9
0.9
3.2

5.3
9.4
8.1
7.3
5.1
13.0
15.3
10.0
4.6
4.1
10.2
3.8
3.0
3.1
21.0
13.9
10.2
9.2
7.6
6.0
5.7
4.4
3.2
5.4
14.0
7.7
4.4
3.7
4.0
4.2
10.4
9.7
6.6
5.3
3.9
2.5
4.7
3.1
2.8
1.5
8.9
7.6
6.0

2.1
1.8
1.8
1.8
1.8
1.8
2
2
2
1.8
1.63
1.7
1.6
1.6
1.6
1.6
1.63
1.6
1.63
1.6
1.67
1.66
2.25
2
2
2.25
2.25
1.8
1.7
1.7
2.25
1.75
1.75
1.75
1.9
1.9
1.9
1.6
1.6
1.6
1.6
1.6
1.7

0.825
0.75
0.75
0.75
0.8
0.8
0.35
0.7
0.75
0.85
0.8
0.86
0.87
0.87
0.75
0.75
0.8
0.8
0.85
0.8
0.85
0.85
0.75
0.75
0.7
0.75
0.75
0.5
0.75
0.75
0.7
0.75
0.75
0.75
0.8
0.9
0.85
0.85
0.9
0.8
0.8
0.85
0.85

57
87
85
74
65
47
90
77
57
54
32
52
40
40
82
80
32
50
37
34
32
32
21
26
55
16
26
22
23
19
30.8
28
27.3
23.8
53
34
53
40
26
13
46
37
35

0.9
1.3
1.4
0.9
0.9
1
0.7
1.4
1.5
1.1
1.1
0.8
1
0.9
1.1
0.8
1.1
1.1
1.1
1.1
1.1
1.1
1.5
1.1
1
0.9
1.5
1.5
0.77
0.7
0.4
0.5
0.4
0.4
0.6
0.65
0.9
0.9
0.6
0.6
1.1
1.1
1.1

4.9
5.0
2.4
7
5.8
5.9

1.7
2
2
1.7
1.6
1.6

0.85
0.85
0.85
0.4
0.4
0.4

33
16
34
60
3.4
43

1.1
2
2
1
1
1

RDSon
Thermal
Temperatu
Resistanc
re
e qJA
Coefficient
60
67
70
73.5
74
74
75
77.5
78
67
70
72
73.5
75
77
78
57
58
58.2
58.5
59
74.5
77
57.6
58.6
58.9
58.3
59.4
45.7
57.8
53.2
54
55.1
55.6
56.6
57.6
57.7

0.47%
0.53%
0.40%
0.49%
0.51%
0.49%
0.53%
0.50%
0.50%
0.40%
0.40%
0.39%
0.39%
0.40%
0.43%
0.40%
0.77%
0.67%
0.67%
0.67%
0.73%
0.47%
0.43%
0.50%
0.50%
0.48%
0.54%
0.60%
0.50%
0.44%
0.56%
0.48%
0.52%
0.56%
0.56%
0.54%
0.64%

RDSon
(Vg=10V)
(m)

measured Qrr (nC)

Forward conducting
current in
measuring Qrr (A)

3.4
4.2
4.8
6.6
7.0
7.0
7.8
10.7
11.5
3.5
3.9
4.6
5.2
6.1
8.4
8.9
3.0
4.6
6.5
7.5
8.2
6.1
8.2
3.4
6.9
8.2
5.2
9.1
1.3
4.2
1.3
2.5
2.5
2.8
3.7
4.3
4.6

30
18
16
9.7
9.2
7.5
8.8
7
5.5
13.8
8
3.2
3
3.5
2.7
1.7
35
25
20
17
15
4
6
16
8
7
2
0.6
34
3.5
36
25.9
18
16
8
6.3
10.7

30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
23
30
30
30
30
30
30
30
30

57.8
55.1
55.6
56.6
57.8
54
45.7
46
46.3
58.3
47.5
46.3
46.3
46.3
45.7
46
47.5
47.7
48
48.5
48.8
49.1
62.5
60.5
75.5
80.5
91.5
89.9
96
97.1
85.5
91.9
91.9
92.7
58.3
59.4
57.7
59.1
59.2
60.7
56.5
55.9
56.5

0.53%
0.52%
0.48%
0.48%
0.44%
0.56%
0.52%
0.64%
0.56%
0.52%
0.60%
0.52%
0.52%
0.52%
0.80%
0.48%
0.60%
0.56%
0.07%
0.76%
0.72%
0.68%
0.44%
0.48%
0.64%
0.40%
0.40%
0.36%
0.52%
0.48%
0.56%
0.48%
0.56%
0.52%
0.56%
0.48%
0.44%
0.48%
0.44%
0.50%
0.56%
0.72%
0.80%

4.8
2.2
2.4
3.2
4.2
1.6
1.3
2.2
3.8
5.2
2.7
4.0
4.8
5.3
0.9
1.5
2.7
2.9
3.5
4.1
4.7
5.8
12.5
7.0
3.2
5.1
8.2
9.0
6.8
8.3
3.6
4.2
5.4
7.0
5.7
8.0
3.6
5.3
8.8
15.0
2.5
3.4
4.1

6.7
9
8.5
6
3.5
28.6
34
17.3
5.7
2
45
13.6
8
8.4
117
70
45
36
35
26
25
10
8
13
40
23
9
9
20
20
65
57
38
32
1.7
4
10
8.4
9.1
0
37.5
33
28

30
30
30
30
30
30
23
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
2
2.1
2.5
2.9
2.7
10
2
2
2
2
2
2
20
20
20
20
20
20
20
20
20

57
41
47
40
46.4
41.15

0.80%
0.60%
0.53%
0.48%
0.48%
0.48%

4.8
4.7
8.1
1.6
2.8
2.7

22
10.7
5
50
32
32

20
30
15
2
2
2

Qrr
Characterization
voltage

Qg(VGS=4.5V)
(nC)

Qg(VGS-10V) (nC)

ID Max (A)

15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15

30
20.5
15
11.3
11
12.5
9.2
7.1
6
21.8
18
16
12.8
11
9
7.2
16.8
11
7.6
6.8
6.2
11
8.1
17.2
9
8.2
10.7
6
40.2
13.5
39
32
22
20
15.9
12.9
11.5

73
48
37
26
25
29.3
21
18.2
14.1
44
38
32
25.7
21.8
17.8
14.6
41
24
17.5
15.4
13
22
16.2
28.2
16.5
15.8
25
13
83.6
32
88
74
52
45
34.4
31
25.4

117
88
76
63
58
58
54
40
35
98
89
78
73
12.6
49
10.2
79
54
41
37
32
55
44
64
40
38
58.5
30
171
66
191
130
104
90
75
64
57

15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15

11.3
25.6
12.8
19.2
13.5
34.3
40.2
24.5
12.2
10.7
22
10.8
8.7
8
62.1
34
22
19
15.9
12.8
11.3
9.2
7.7
12.2
36
24
9.2
10.5
15
15.6
26.3
23.3
17.4
12.4
10.5
6.5
12.6
8
8.8
4.6
20
15.7
12.4

22.4
62
53
43.8
32
71.3
83.6
49.5
25
25
49.4
21.5
17.3
16
148
76.5
49.4
43
31
28.5
25.5
20.9
15.2
25
75
46
18.3
20.4
28
29
58.9
52.1
38.5
25
24
15
29
16
16.3
8.4
46.5
37.5
28

59
115
100
85
66
155
171
117
75
58.5
91
80.5
74.6
65.8
166
147
93
79
70
53
47
41
6.4
9.9
15
12.2
9
11.7
11.4
10.5
17
16
13.6
12.5
57
50
69
41
34
23
79
75
56

15
15
15
15
15
15

10.1
11.5
6
22.6
13.6
14.2

22.8
25.4
12
47.9
29.4
30.5

46
89
30
100
64
65

LowSideMO
SFET only or
Both

Packgage

both
both
both
both
both
both
both
both
both
both
both
both
both
both
both
both
low
low
low
low
low
both
both
both
both
both
both
both
low
both
both
both
both
both
both
both
both

DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL

both
both
both
both
both
both
low
low
low
both
low
both
both
both
low
low
low
low
low
low
low
low
both
both
both
both
both
low
both
both
low
low
low
low
both
both
both
both
both
both
low
low
low

SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SO8FL
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
SOIC8
u-8FL
u-8FL
u-8FL
u-8FL
u-8FL
u-8FL
u-8FL
u-8FL
u-8FL

low
both
both
low
low
low

u-8FL
SO8FL
u-8FL
SO8FL
u-8FL
SO8FL

Driver
NCP5911
NCP5901
NCP5359A
NCP3418

Maxim
Enter
Driver
Sourcing
Voltage Vdr Resistance @
(V)
HS
6.5
15
15
15

0.9
2
2
1.8

Enter
Sinking
Resistance
@ HS ()

Enter Rise
Delay
TimetpdhDRVH
(ns)

0.7
1
1
1

30
27
20
30

Enter Fall Delay Enter External

Time tpdlDRVH Gate Resistance
(ns)
Rgex ()
15
20
20
25

0
0
0
0

Enter
Quiescent
Current (mA)
1
2
5
0

Revision History
Version 1.0 (Sept 1st 2011)
Initial release for MS Office 2003
Version 2.0 (Jan 11th 2012)