Surface Mount Schottky Barrier Rectifier Diode NSD Series

FEATURES
• VOLTAGE: 20 TO 100 VOLTS, CURRENT: 1.0 & 2.0 AMPERE
• FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS
• FAST RESPONSE AND LOW FORWARD VOLTAGE
• HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS)
• EASY PICK AND PLACE
RoHS
Compliant
includes all homogeneous materials
*See Part Number System for Details
CATHODE

1.25~1.45 2.54~2.79

MECHANICAL DATA:
3.99~4.50 SIZE: SMA/DO-214AC
CASE: Molded epoxy
TERMINALS: Solder plated Copper alloy
4.93~5.28 POLARITY: Indicated by cathode band
STANDARD PACKAGING: 12mm tape (EIA-RS-481)
WEIGHT: 0.064 gram
1.98~2.29
.8~1.3
0.76~1.27 0.1~0.2 PART NUMBERING SYSTEM
NSD 14 TR 5K F
Dimensions (millimeters) RoHS Compliant
Reel qty: (5K & 7.5K)
Tape and Reel
Voltage & Current Designator (See ratings tables)
Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted)

Ratings Symbol NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 90 100 Volts
Maximum RMS Voltage VRMS 14 21 28 35 42 56 64 71 Volts
Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 90 100 Volts
Maximum Average Forward Rectified Current Io 1.0 Amps
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM 30 Amps
supreimposed on rated load (JEDEC method)
(Note 2)
Maximum Thermal Resistance 25 °C/W
RqJL
Typical Junction Capacitance (Note 1) CJ 110 80 70 pF
Operating and Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Typical Reverse Recovery Time TRR 15 nS

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)

Characteristics Symbol NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100 UNITS
Maximum Forward Voltage at 1.0A DC VF 0.50 0.65 0.85 Volts
Maximum DC Reverse Current at @TA=25°C 0.5 mAmps
IR
Rated DC Blocking Voltage (Note 3) @TA=100°C 10.0 mAmps
NOTES: 1. Measured at 1.0MHz and applied average voltage of 4.0VDC.
2. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns.
3. Pulse width 300uS, 2% duty cycle.

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 Surface Mount Schottky Barrier Rectifier Diode NSD Series
RATING AND CHARACTERISTIC CURVES (NSD12 THRU NSD100)
FIG. 1 - FORWARD CURRENT FIG. 2 - MAXIMUM NON-REPETITIVE FOR-
DERATING CURVE WARD SURGE CURRENT
1.0 50
AVERAGE FORWARD RECTIFIED

8.3ms Single Half Sine-Wave

PEAK FORWARD SURGE CUR-

(JEDEC Method) TJ=125OC
.8 40
NSD15, 16
CURRENT, (A)

RENT, (A)
.6 30
NSD12~14

.4 20
Single Phase
Half Wave 60Hz
.2 10
Resistive or
Inductive Load
0 0
0 25 50 75 100 125 150 175 1 2 4 6 8 10 20 40 60 80 100
O
AMBIENT TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz

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Surface Mount Schottky Barrier Rectifier Diode NSD Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted)

Ratings Symbol NSD22 NSD23 NSD24 NSD25 NSD26 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 Volts
Maximum RMS Voltage VRMS 14 21 28 35 42 Volts
Maximum DC Blocking Voltage VDC 20 30 40 50 60 Volts
Maximum Average Forward Rectified Current lo 2.0 Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM 50 Amps
superimposed on rated load (JEDEC method)
Rth-JA 75.0 o
Typical Thermal Resistance C/W
Rth-JL 17.0
Typical Junction Capacitance (Note 1) CJ 220 180 pF
o
Operating and Storage Temperature Range TJ/TSTG -65 to +125/-65 to +150 -65 to +150 C

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)

Characteristics Symbol NSD22 NSD23 NSD24 NSD25 NSD26 UNITS
Maximum Forward Voltage at 2.0A DC VF 0.50 0.70 Volts
Maximum DC Reverse Current at @TA=25°C 0.5 mAmps
IR
Rated DC Blocking Voltage @TA=100oC 20.0 10.0 mAmps
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.

Fig. 1 - Derated Curve for Output

Rectifier Current Fig. 2 - Typcial Junction Capacitance
2.0 500
Resistive or
Average Forward Current

Inductive Load TJ=25°C

f=1.0MHz
Vsig=50mV p-p
1.5
NSD22 ~ NSD24 NSD22 100
Amperes

&
NSD24
1.0

NSD22 ~ NSD24
PCB Mounted on NSD25 ~ NSD26
0.5 0.2x0.2”(5.0x5.0mm)
Copper Pad Areas 10
0.1 1.0 10 100
Reverse Voltage, Volts
0
50 60 70 80 90 100 110 120 130 140 150 160
Lead Temperature,°C

Fig. 3 - Typical Reverse Fig. 4 - Maximum Non-Repetive Peak Fig. 5 - Typical Instantaneous Forward
Current Characteristics Forward Surge Current Characteristics
Peak Forward Surge Current

100 50
8.3ms Single Half Sine-Wave 100
(JEDEC Method) at Rated TL
40
TA=125°C
10
Amperes

30 10
Pulse Width=300µS
CJ, Capacitnce, pF

1% Duty Cycle

20
1 TA=75°C TJ=125°C
TJ=25°C

10
1

0.1 0 TJ=150°C
1 10 100

Number of Cycles at 60Hz

TA=25°C 0.1
0.01

0.001
Percentage of Rated Peak 0.01
Reverse Voltage, % 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantanesous Forward Voltage,
Volts
®

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 Surface Mount Schottky Barrier Rectifier Diode NSD Series
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings Symbol NSD32 NSD33 NSD34 NSD35 NSD36 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 Volts
Maximum RMS Voltage VRMS 14 21 28 35 42 Volts
Maximum DC Blocking Voltage VDC 20 30 40 50 60 Volts
Maximum Average Forward Rectified Current lo 3.0 Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM 80 Amps
superimposed on rated load (JEDEC method)
Rth-JA 55.0 o
Typical Thermal Resistance C/W
Rth-JL 17.0
Typical Junction Capacitance (Note 1) CJ pF
o
Operating and Storage Temperature Range TJ/TSTG -55 to +125/-55 to +150 -55 to +150 C

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)

Characteristics Symbol NSD32 NSD33 NSD34 NSD35 NSD36 UNITS
Maximum Forward Voltage at 3.0A DC VF 0.50 0.60 Volts
Maximum DC Reverse Current at @TA=25°C 0.5 mAmps
IR
Rated DC Blocking Voltage @TA=100oC 20.0 10.0 mAmps
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.

Fig. 1 - Derated Curve for Output Fig. 2 - Maximum Non-Repetive Peak Fig. 3 - Typcial Junction Capacitance
Rectifier Current Forward Surge Current 1000
Peak Forward Surge

TJ=25°C
Current Amperes

f=1.0MHz
3.0
Resistive or Inductive Load 100 Vsig=50mV p-p
At Rated TL
Average Forward
Current Amperes

8.3ms Single Half Sine-wave

2.5
NSD35~ NSD36 80 (JEDEC Method)
NSD32 ~ NSD34

2.0 60
PCB Mounted on
1.5 0.55 x 0.55” (14 x 14mm) 40 100
Copper Pad Areas

1.0 20

0.5 0
1 10 100
NSD32 ~ NSD34
0 Number of Cycles at 60Hz NSD35 ~ NSD36
50 60 70 80 90 100 110 120 130 140 150 160 10
Lead Temperature,°C 0.1 1.0 10 100
Reverse Voltage, Volts

Fig. 5 - Typical Reverse

Fig. 4 - Typical Instantaneous Forward Fig. 6 - Maximum Non-Repetive Peak
Current Characteristics
Tanscient Theral Impedance,

Characteristics Forward Surge Current

20
30 100
TJ = 125°C 10
TA=125°C
10 10
TJ = 150°C Pulse Width=300µS
°CW

1% Duty Cycle
CJ, Capacitnce, pF

1
TJ = 25°C 1
1
TA=75°C

0.1 0.01
0.01 0.1 1 10 100
0.1
t1 Pulse Duraton, sec.
NSD32 ~ NSD34
NSD35 ~ NSD36 0.01
0.01 TA=25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantanesous Forward Voltage, NSD32 ~ NSD34
NSD35 ~ NSD36
Volts 0.001
Percentage of Rated Peak
Reverse Voltage, %

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Surface Mount Diodes NRD And NSD Series
TAPING AND MOUNTING SPECIFICATIONS

P0

P1
d
E
F

W
B
A P

D1
D1

D W1

RECOMMENDED LAND PATTERN

Dimensions (mm)
REEL QUANTITIES B
A 1.2-1.8
Reel Size Reel Quantity
B 1.5-2.2
13 inch (330mm) 5,000 & 7,500 pcs A
A
C
C 2.7 max.

Item Symbol Specifications (mm) Specifications (inch)

Carrier Width A 3.2 max. .126 max.
Carrier Length B 7.8 max. .307 max.
Carrier Depth C 4.5 max. .177 max.
Sprocket Hole d 1.5 ± 0.1 .059 ± .004
Reel Outside Diameter D 178 ± 2.0 7.00 ± .079
Reel Inner Diameter D1 50 min. 1.969 min.
Feed Hole Diameter D2 13.0 ± 0.5 .512 ± .020
Sprocket Hole Position E 1.75 ± 0.1 .069 ± .004
Punch Hole Position F 5.5 ± 0.1 .217 ± .004
Punch Hole Pitch P 4.0 ± 0.1 .157 ± .004
Sprocket Hole Pitch P0 4.0 ± 0.1 .157 ± .004
Embossment Center P1 2.0 ± 0.05 .079 ± .002
Overall Tape Thickness T 1.1 max. .043 max.
Tape Width W 12.0 ± 0.3 .472 ± .012
Reel Width W1 18.4 max. .724 max.
NOTE: Devices are packed in accordance with EIA standard RS-481-A and specifications given above.

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