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EEE 3100
Electrical & Electronic Technology
TABLE OF CONTENT:
PAGES:
1. TITLE 1
2. OBJECTIVE 1
4. RESULT 3
5. DISCUSSION 5
6. CONCLUSION 6
7. REFERENCES 6
8. APPENDIX 7
1) Resistors
1
2) Bipolar Junction Transistor (BJT)
3) Capacitor
4) Function generator
5) Multimeter
6) Oscilloscope
7) Connecting wires
RESULT
1. Transistor diagram and its symbol.
2
Schematic symbols for PNP- and NPN-type BJT.
2. By using a multimeter,
a) IB = 47.7 mA
b) IC = 5.34 mA
c) VCE = 0.426 V
d) VB = 12.63 V
e) VC = 11.60 V
f) VBC = 1.03 V
3. Example calculation:
IB = VCC - VBE
RB
= 12 – 0.7
270
= 41.85 µA
IC = β IB
= 4.6035 mA
3
= 1.87 V
VC = VCE = 1.87 V
VB = VBE = 0.7 V
DISCUSSION
The BJT is the most common transistor. It consists of three sections of
semiconductors: an emitter, a base and a collector. In an npn-type BJT, the
emitter and the collector are made of n-type semiconductors and the base is
made of a p- type semiconductor. In a pnp-type BJT, it is the other way
round. The three sections of a BJT form two p-n junctions: the emitter-base
junction and the collector-base junction. Individually, these junctions are not
different from the p-n junction in a diode. The unique characteristics of the
BJT originate from an interaction between these two junctions.
The operating mode of a BJT depends on how its junctions are biased.
The BJT is biased to operate in the active mode in applications where it is
used as an amplifier. In the cut-off and saturation modes, the BJT behaves
like an open and closed switch, respectively. Most BJTs in digital circuits (logic
gates, memory) operate in these two modes. The reverse active mode is
rarely used and is listed here for reference.
CONCLUSION
From this experiment, we are able to determine operational range of
bipolar junction transistor (BJT).
APPENDIX
1) Resistors
3) Capacitor
5
4) Function generator
5) Multimeter
6) Oscilloscope
7) Connecting wires
REFERENCES
1. Lab manual EEE3100.