Code No: R5102303 1

I B.Tech (R05) Supplementary Examinations, June 2009

BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. Consider a general A.C circuit in which the current leads the applied voltage by an angle φ. Write
the equation for the voltage and current and hence derive the equation for the power. Also plot the
voltage, current and power wave forms. [16]
2. (a) Why is the core of the transformer laminated?
(b) What are the various losses in a transformer? And how do these losses vary?
(c) A single phase 50 Hz transformer has 100 turns on the primary and 400 turns on the secondary.
The cross sectional area of the core is 250 cm2 . The primary winding is connected to 230 Volts.
Determine
i. E.M.F induced in the secondary winding.
ii. The maximum value of the flux density in the core. [4+8+4]
3. (a) Give the electronics configurations of Silicon and Germanium.
(b) What is the difference between intrinsic and extrinsic semi-conductors. ?
(c) Draw energy band diagrams of
i. Insulator
ii. Semiconductor and
iii. Metal, and hence explain the difference in their conductivities. [4+4+8]
4. (a) Compare all types of rectifiers.
(b) A 230 V, 60 Hz voltage is applied to the primary of a 5:1 step down, center taped transformer
used in a FWR having a load of 900 Ω. If the diode resistance and secondary coil resistance
together has a resistance of 100 Ω, determine.
i. DC voltage across the load
ii. DC current flowing through the load.
iii. DC power delivered to the load.
iv. PIV across each diode
v. Ripple voltage and its frequency
Derive the formulae used. [6+10]
5. (a) Compare the merits and drawbacks of FET and BJT.
(b) Sketch the basic structure of an n-channel JFET.
(c) Define the pinch off voltage VP and sketch the depletion region before and after pinch-off and
explain the reason. [6+4+6]
6. (a) Draw the circuit of a transformer coupled amplifier and explain its operations.
(b) Draw the circuit of a class B push-pull amplifier and derive expression for the output power.[8+8]
7. (a) A phase shift oscillator is to be designed with FET having gm = 500 µs,
rd = 4 kΩ while the resistance in the feedback circuit is 9.7 kΩ. Select the proper value of C and
RD to have the frequency of oscillations as 5 KHz. Draw the corresponding circuit diagram.
(b) Explain the working principle of Astable multivibrator together with collector and base wave-
forms. [8+8]
8. (a) Realize NAND gate using minimum number of NOR gates.
(b) Explain the principle of basic shift registers.
(c) Distinguish between asynchronous and synchronous counters.
(d) Distinguish between Ring and Twisted Ring counters. [4+4+4+4]

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Code No: R5102303 2
I B.Tech (R05) Supplementary Examinations, June 2009
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Derive the voltage current relations (between line and phase) values for a star and delta connected systems.
(b) A 3-phase, 4 wire 208V system supplies power to a star connected load each arm with impedance equal to
(17.32 − j10) ohms (per phase) find the line currents, power consumed, and the power factor of the load.
[8+8]
2. (a) Why is the core of the transformer laminated?
(b) What are the various losses in a transformer? And how do these losses vary?
(c) A single phase 50 Hz transformer has 100 turns on the primary and 400 turns on the secondary. The cross
sectional area of the core is 250 cm2 . The primary winding is connected to 230 Volts. Determine
i. E.M.F induced in the secondary winding.
ii. The maximum value of the flux density in the core. [4+8+4]
3. (a) Draw the energy band diagram of p-n junction under open circuit condition and explain its operation.
(b) Prove that the dynamic resistance of p-n diode is r ≈ nνIT [10+6]
4. (a) Draw the block diagram of a regulated power supply and explain its operation.
(b) Determine the value of ripple factor for the output of a half wave rectifier without filter. [8+8]
5. (a) Compare and contrast FET and BJT.
(b) Give the constructional features of JFET and explain its operation with the help of the drain characteristics.
(c) From the drain characteristics derive mutual characteristic and explain the shape of the curve qualitatively.
[6+6+4]
6. Derive the expression for input and output resistances of voltage series and current shunt feedback amplifiers.
[16]
7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the gain of the amplifier must be
at least 3 for the oscillations to occur.
(b) For the fixed-bias Ge transistor, n-p-n type, the junction voltages at saturation and cutoff one in active
region, may be assumed to zero. This circuit operate properly over the temperature range -50 o C to 75
o
C and to just start malfunctioning at these extremes. The various circuit specifications are: VCC = 4.5V,
VBB = 3volts, hf e =40 at -50 o C, and hf e =60 at 75 o C, ICBO = 4 µA at 25 o C and doubles every 10 o C.
Collector current is 10 µA. Design the values of Rc1 , R1 and R2 . [8+8]
8. (a) Explain the following switching circuit in binary logic notation as shown in the figure1

Figure 1:

(b) Define a register. Construct a shift register using S-R flip-flops and explain its operation.
(c) Convert the following numbers:
i. (101101. 101101)2 decimal number
ii. (5345)10 to binary number. [4+6+6]

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Code No: R5102303 3
I B.Tech (R05) Supplementary Examinations, June 2009
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. (a) Derive an equation for the total power consumed in a three phase circuit. Will it depend on the
type of load connected?
(b) Three identical impedances 106 53.10 ohm are connected in delta to a 3-phase, 240 volt balanced
supply. Find the line currents and power consumed. [8+8]
2. (a) With a neat sketch explain the construction of a D.C. machine.
(b) Explain the principle of operation of D.C generator. [8+8]
3. (a) Explain how an n-type semiconductor is formed. Name different donor impurities used.
(b) i. Find the conductivity of intrinsic silicon at 300 0 K.
ii. If donor impurity is added to the extent of 1 impurity atom in 108 silicon atoms, find the
conductivity. It is given that at 300 0 K,
ni = 1.5 × 1010 /Cm3 , µp = 500 Cm2 /vs, µn = 1300 Cm2 /V S. [4+4+8]
4. (a) In a bridge rectifier, the transformer is connected to 220 V, 60 Hz mains and the turns ratio of
the step down transformer is 11:1. Load resistance is 800 Ω. Assuming the diode is ideal, find
i. Idc
ii. Voltage across the load
iii. PIV
(b) Explain the following terms:
i. Ripple factor
ii. Peak Inverse Voltage
iii. Efficiency
iv. TUF
v. Form factor
vi. Peak factor. [6+10]
5. (a) Write short notes on
i. Thermal runaway
ii. Early effect in BJT
iii. UJT as a relaxation oscillator.
(b) From the relevant characteristics show that gm × Υd = µ of a given FET. [10+6]
6. (a) List out different distortions that occur in amplifiers and discuss.
(b) Enumerate the effect of negative feedback on the various characteristics of the amplifier.
(c) Draw the circuit diagram of an emitter follower circuit and mention what type of feedback is
employed? Justify your answer. [6+6+4]
7. (a) Explain the working principle of Colpitt’s oscillator and derive the formula for the O/P signal
frequency.
(b) Explain the operation of one-shot circuit with relevant waveforms. [8+8]
8. (a) Realize Exclusive OR gate using minimum number of NAND gates.
(b) Realize SR flip-flop using NAND gates.
(c) Explain the principle of decade counter and realize it using JK-flip-flops.
(d) Realize exclusive OR gate using basic gates. [4+4+4+4]

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Code No: R5102303 4
I B.Tech (R05) Supplementary Examinations, June 2009
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
?????

1. With a neat sketch explain the construction and working principle of permanent magnet moving
coil instrument. Derive the torque equation. Explain with suitable circuits, how PMMC is used as
voltmeter? [16]
2. (a) Explain the constructional details of a synchronous machine giving the reasons for making two
types of rotors.
(b) Explain auxiliary motor starting of synchronous motors. [6+10]
3. (a) Give the electronics configurations of Silicon and Germanium.
(b) What is the difference between intrinsic and extrinsic semi-conductors. ?
(c) Draw energy band diagrams of
i. Insulator
ii. Semiconductor and
iii. Metal, and hence explain the difference in their conductivities. [4+4+8]
4. (a) Give the application of SCR, DIAC and TRIAC.
(b) For the network shown in the figure1 below sketch V0 and determine Vdc if i/p is a sine wave
whose RMS value is 110 V.

Figure 1:

5. (a) Draw a family of drain characteristics and mutual characteristics of an n-channel FET and explain
the shape of the curves qualitatively.
(b) Define FET parameters and derive the relationship between them. [8+8]
6. (a) List out different distortions that occur in amplifiers and discuss.
(b) Enumerate the effect of negative feedback on the various characteristics of the amplifier.
(c) Draw the circuit diagram of an emitter follower circuit and mention what type of feedback is
employed? Justify your answer. [6+6+4]
7. (a) Give the circuit diagram of a scale changer circuit using OP-AMP and explain its operation.
(b) Design an astable multivibrator circuit using, silicon BJTs for the given specifications: Vcc =
15V, hF Emin = 40, ICsat = 2 mA, tON = tOF F = 200 µsec.Assume necessary data.. [6+10]
8. (a) Explain how a shift register is used as a Ring counter. Draw the O/P waveform from each flip-flop
of a 3-stage unit.
(b) Prove that if w0 x + yz = 0, then wx + y0 (w0 +z0 ) = wx + xz + x0 z0 + w0 y0 z.
(c) Represent the given negative numbers in sign-magnetude, 1’S and 2’S complement representation
in 12-bit format.
i. –64
ii. –512. [6+6+4]

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