BC184 Silicon NPN Small Signal Transistor

September 2007

BC184 Silicon NPN Small Signal Transistor

BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol
VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range

Parameter

Value
30 45 5 100 -55 ~ +150

Units
V V V mA C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

Ta=25C unless otherwise noted

Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
350 2.8 125 357

Units
mW mW/C C/W C/W

*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.

2007 Fairchild Semiconductor Corporation BC184 Rev. 1.0.0 1

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BC184 Silicon NPN Small Signal Transistor

Electrical Characteristics TC=25C unless otherwise noted

Symbol
BVCBO BVCEO BVEBO IEBO ICBO hFE VCE(sat) VBE(sat) VBE(on) Cob fT

Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current gain Bandwidth Product

Test Condition
IC = 10A IC = 2mA IE = 10A VEB = 4V VCB = 30V VCE = 5V, IC = 10A VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA, f = 100MHz

Min.
45 30 5

Typ.

Max.

Units
V V V

15 15 100 130 0.25 0.6 1.2 0.55 150 0.7 5

nA nA

V V V pF MHz

Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C.

2007 Fairchild Semiconductor Corporation BC184 Rev. 1.0.0 2

www.fairchildsemi.com

BC184 Silicon NPN Small Signal Transistor

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2007 Fairchild Semiconductor Corporation BC184 Rev. 1.0.0 3

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